SE382275B - Elektroniskt minneselement. - Google Patents

Elektroniskt minneselement.

Info

Publication number
SE382275B
SE382275B SE7003519A SE351970A SE382275B SE 382275 B SE382275 B SE 382275B SE 7003519 A SE7003519 A SE 7003519A SE 351970 A SE351970 A SE 351970A SE 382275 B SE382275 B SE 382275B
Authority
SE
Sweden
Prior art keywords
memory element
electronic memory
electronic
memory
Prior art date
Application number
SE7003519A
Other languages
English (en)
Inventor
W M Regitz
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of SE382275B publication Critical patent/SE382275B/sv

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
SE7003519A 1969-03-19 1970-03-17 Elektroniskt minneselement. SE382275B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80842169A 1969-03-19 1969-03-19

Publications (1)

Publication Number Publication Date
SE382275B true SE382275B (sv) 1976-01-19

Family

ID=25198716

Family Applications (3)

Application Number Title Priority Date Filing Date
SE7003519A SE382275B (sv) 1969-03-19 1970-03-17 Elektroniskt minneselement.
SE7415002A SE7415002L (sv) 1969-03-19 1974-11-29
SE7502344A SE396495B (sv) 1969-03-19 1975-03-03 Elektroniskt minne

Family Applications After (2)

Application Number Title Priority Date Filing Date
SE7415002A SE7415002L (sv) 1969-03-19 1974-11-29
SE7502344A SE396495B (sv) 1969-03-19 1975-03-03 Elektroniskt minne

Country Status (7)

Country Link
JP (1) JPS5623237B1 (sv)
CA (1) CA941964A (sv)
CH (1) CH540548A (sv)
DE (1) DE2013233A1 (sv)
FR (1) FR2037223B1 (sv)
GB (1) GB1292265A (sv)
SE (3) SE382275B (sv)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037015U (ja) * 1983-08-18 1985-03-14 丸山　スミエ シヤツのポケツト

Also Published As

Publication number Publication date
CH540548A (fr) 1973-08-15
SE396495B (sv) 1977-09-19
CA941964A (en) 1974-02-12
DE2013233A1 (sv) 1970-10-01
GB1292265A (en) 1972-10-11
FR2037223A1 (sv) 1970-12-31
FR2037223B1 (sv) 1974-05-03
JPS5623237B1 (sv) 1981-05-29
SE7415002L (sv) 1974-11-29
SE7502344L (sv) 1975-03-03

Similar Documents

Publication Publication Date Title
NL151219B (nl) Primair elektrisch element.
NL175766C (nl) Geintegreerde geheugencel.
ES192827Y (es) Elemento de construccion normalizado.
NL163893C (nl) Bistabiele monolytische geheugeninrichting.
NL154023B (nl) Prioriteitscircuit.
CH508283A (de) Alkalisches Element
CH539918A (de) Binäre Speicherschaltung
NL156555B (nl) Logisch circuit.
IT993515B (it) Multiselettore elettronico
NL155953B (nl) Magnetometer.
NL151538B (nl) Schakel- en geheugenelement.
NL143756B (nl) Suprageleidend element.
NL161550B (nl) Verbindingselement.
NL168912C (nl) Uitzetbaar verbindingselement.
NL7604001A (nl) Lateielement.
SE382275B (sv) Elektroniskt minneselement.
BE760026A (fr) Memoire
NL153703B (nl) Geheugeninrichting.
NL162771C (nl) Uitleeseenheid voor geheugens.
NL145080B (nl) Platengeheugen.
SE380638B (sv) Elektrografiskt element.
NL153691B (nl) Geheugenstelsel.
DK124570B (da) Galvanisk element.
NL150616B (nl) Vaste-stof-geheugenbeeldpaneel.
IT965537B (it) Multiselettore elettronico