SE376703B - - Google Patents

Info

Publication number
SE376703B
SE376703B SE7112037A SE1203771A SE376703B SE 376703 B SE376703 B SE 376703B SE 7112037 A SE7112037 A SE 7112037A SE 1203771 A SE1203771 A SE 1203771A SE 376703 B SE376703 B SE 376703B
Authority
SE
Sweden
Application number
SE7112037A
Inventor
A L Limberg
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE376703B publication Critical patent/SE376703B/xx

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
SE7112037A 1970-09-24 1971-09-23 SE376703B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7501570A 1970-09-24 1970-09-24

Publications (1)

Publication Number Publication Date
SE376703B true SE376703B (de) 1975-06-02

Family

ID=22123010

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7112037A SE376703B (de) 1970-09-24 1971-09-23

Country Status (10)

Country Link
US (1) US3651346A (de)
JP (1) JPS517975B1 (de)
AU (1) AU453506B2 (de)
BE (1) BE772996A (de)
CA (1) CA946051A (de)
DE (1) DE2147606A1 (de)
FR (1) FR2106306A5 (de)
GB (1) GB1374122A (de)
NL (1) NL7113077A (de)
SE (1) SE376703B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778640A (en) * 1972-07-03 1973-12-11 Ibm Signal voltage level translating circuit
FR2245125B1 (de) * 1973-09-25 1977-03-11 Thomson Csf
US4019071A (en) * 1976-04-12 1977-04-19 Rca Corporation Biasing current attenuator
US4123698A (en) * 1976-07-06 1978-10-31 Analog Devices, Incorporated Integrated circuit two terminal temperature transducer
JPS53152471U (de) * 1977-05-09 1978-11-30
US4204133A (en) * 1977-10-14 1980-05-20 Rca Corporation Temperature-sensitive control circuits
US4117416A (en) * 1977-11-28 1978-09-26 Rca Corporation Current mirror amplifiers with programmable current gains
US4430624A (en) * 1982-06-24 1984-02-07 Motorola, Inc. Current mirror circuit arrangement
JPS5955610A (ja) * 1982-08-24 1984-03-30 シ−メンス・アクチエンゲゼルシヤフト 電流ミラ−回路
US4490670A (en) * 1982-10-25 1984-12-25 Advanced Micro Devices, Inc. Voltage generator
US4567381A (en) * 1983-12-01 1986-01-28 Rca Corporation Bias network having one mode for producing a regulated output
CA2066929C (en) * 1991-08-09 1996-10-01 Katsuji Kimura Temperature sensor circuit and constant-current circuit
US5459430A (en) * 1994-01-31 1995-10-17 Sgs-Thomson Microelectronics, Inc. Resistor ratioed current multiplier/divider
KR102060749B1 (ko) * 2018-11-15 2019-12-30 주식회사 사피엔반도체 공통 임피던스 영향이 개선된 led 구동 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB770200A (en) * 1953-07-24 1957-03-20 Rca Corp Temperature controlled semi-conductor bias circuit
CA799613A (en) * 1964-12-21 1968-11-19 H. H. Scott Transistor bias and temperature compensation circuit
US3430155A (en) * 1965-11-29 1969-02-25 Rca Corp Integrated circuit biasing arrangement for supplying vbe bias voltages
US3392342A (en) * 1965-12-13 1968-07-09 Ibm Transistor amplifier with gain stability
US3553500A (en) * 1968-03-06 1971-01-05 Rca Corp Microsensing network

Also Published As

Publication number Publication date
FR2106306A5 (de) 1972-04-28
NL7113077A (de) 1972-03-28
CA946051A (en) 1974-04-23
AU453506B2 (en) 1974-10-03
DE2147606A1 (de) 1972-03-30
JPS517975B1 (de) 1976-03-12
GB1374122A (en) 1974-11-13
AU3319571A (en) 1973-03-15
BE772996A (fr) 1972-01-17
US3651346A (en) 1972-03-21

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