SE366151B - - Google Patents

Info

Publication number
SE366151B
SE366151B SE16593/71A SE1659371A SE366151B SE 366151 B SE366151 B SE 366151B SE 16593/71 A SE16593/71 A SE 16593/71A SE 1659371 A SE1659371 A SE 1659371A SE 366151 B SE366151 B SE 366151B
Authority
SE
Sweden
Application number
SE16593/71A
Inventor
D Coleman
S Sze
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE366151B publication Critical patent/SE366151B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
SE16593/71A 1970-12-31 1971-12-23 SE366151B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10325370A 1970-12-31 1970-12-31

Publications (1)

Publication Number Publication Date
SE366151B true SE366151B (OSRAM) 1974-04-08

Family

ID=22294198

Family Applications (1)

Application Number Title Priority Date Filing Date
SE16593/71A SE366151B (OSRAM) 1970-12-31 1971-12-23

Country Status (15)

Country Link
US (1) US3673514A (OSRAM)
JP (1) JPS558824B1 (OSRAM)
AU (1) AU467914B2 (OSRAM)
BE (1) BE777472A (OSRAM)
CA (1) CA938352A (OSRAM)
CH (1) CH538218A (OSRAM)
DE (1) DE2165417A1 (OSRAM)
ES (1) ES398775A1 (OSRAM)
FR (1) FR2120165B1 (OSRAM)
GB (1) GB1380920A (OSRAM)
HK (1) HK35376A (OSRAM)
IE (1) IE35941B1 (OSRAM)
IT (1) IT945840B (OSRAM)
NL (1) NL7117973A (OSRAM)
SE (1) SE366151B (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
US3784925A (en) * 1971-10-08 1974-01-08 Rca Corp Broadband apparatus using high efficiency avalanche diodes operative in the anomalous mode
US3829880A (en) * 1973-01-05 1974-08-13 Westinghouse Electric Corp Schottky barrier plasma thyristor circuit
US3945028A (en) * 1973-04-26 1976-03-16 Westinghouse Electric Corporation High speed, high power plasma thyristor circuit
SE373245B (OSRAM) * 1973-05-07 1975-01-27 Stiftelsen Inst Mikrovags
US3824490A (en) * 1973-06-29 1974-07-16 Bell Telephone Labor Inc Negative resistance devices
US3890630A (en) * 1973-10-09 1975-06-17 Rca Corp Impatt diode
US4623849A (en) 1985-04-02 1986-11-18 Cornell Research Foundation, Inc. Broadband high power IMPATT amplifier circuit
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
US5243199A (en) * 1990-01-19 1993-09-07 Sumitomo Electric Industries, Ltd. High frequency device
JP4637553B2 (ja) * 2004-11-22 2011-02-23 パナソニック株式会社 ショットキーバリアダイオード及びそれを用いた集積回路
WO2012028652A1 (en) * 2010-09-01 2012-03-08 Vibronical Ag Electronic apparatus and electronic circuit comprising such an electronic apparatus
WO2012055630A1 (en) * 2010-10-25 2012-05-03 Vibronical Ag Electronic apparatus and electronic circuit comprising such an electronic apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1516754B1 (de) * 1965-05-27 1972-06-08 Fujitsu Ltd Halbleitervorrichtung
US3393376A (en) * 1966-04-15 1968-07-16 Texas Instruments Inc Punch-through microwave oscillator
US3488527A (en) * 1967-09-05 1970-01-06 Fairchild Camera Instr Co Punch-through,microwave negativeresistance device
US3537021A (en) * 1968-09-09 1970-10-27 Bell Telephone Labor Inc Stable frequency-independent two-valley semiconductor device

Also Published As

Publication number Publication date
FR2120165A1 (OSRAM) 1972-08-11
CA938352A (en) 1973-12-11
HK35376A (en) 1976-06-18
US3673514A (en) 1972-06-27
FR2120165B1 (OSRAM) 1975-04-18
IE35941B1 (en) 1976-07-07
GB1380920A (en) 1975-01-15
DE2165417A1 (de) 1972-08-03
AU467914B2 (en) 1975-12-18
AU3743671A (en) 1973-07-05
ES398775A1 (es) 1975-06-01
NL7117973A (OSRAM) 1972-07-04
CH538218A (de) 1973-06-15
JPS558824B1 (OSRAM) 1980-03-06
IT945840B (it) 1973-05-10
BE777472A (fr) 1972-04-17

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