SE356825B - - Google Patents

Info

Publication number
SE356825B
SE356825B SE02173/69A SE217369A SE356825B SE 356825 B SE356825 B SE 356825B SE 02173/69 A SE02173/69 A SE 02173/69A SE 217369 A SE217369 A SE 217369A SE 356825 B SE356825 B SE 356825B
Authority
SE
Sweden
Application number
SE02173/69A
Inventor
J Cacheux
J Meuleman
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE356825B publication Critical patent/SE356825B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175Li compensated PIN gamma-ray detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
SE02173/69A 1968-02-19 1969-02-17 SE356825B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR140341 1968-02-19

Publications (1)

Publication Number Publication Date
SE356825B true SE356825B (xx) 1973-06-04

Family

ID=8646158

Family Applications (1)

Application Number Title Priority Date Filing Date
SE02173/69A SE356825B (xx) 1968-02-19 1969-02-17

Country Status (7)

Country Link
US (1) US3621256A (xx)
BE (1) BE728562A (xx)
DE (1) DE1907971C3 (xx)
FR (1) FR1564686A (xx)
GB (1) GB1253873A (xx)
NL (1) NL6902316A (xx)
SE (1) SE356825B (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1120616A (en) * 1979-06-19 1982-03-23 Montreal Neurological Institute Detector shape and arrangement for positron annihilation imaging device
US4377747A (en) * 1980-12-08 1983-03-22 Ford Aerospace And Communication Corporation Non-uniform thermal imaging detector
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
US5361272A (en) * 1992-09-18 1994-11-01 Stephen Krissman Semiconductor architecture and application thereof
CA2474450A1 (en) * 2002-02-01 2003-08-07 Board Of Regents, The University Of Texas System Asymmetrically placed cross-coupled scintillation crystals

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3233102A (en) * 1962-07-27 1966-02-01 Lyle E Packard Apparatus relating to the detection and measurement of radioactivity in relatively large bodies
US3293435A (en) * 1963-02-12 1966-12-20 Gen Electric Semiconductor charge multiplying radiation detector

Also Published As

Publication number Publication date
DE1907971A1 (de) 1969-09-25
NL6902316A (xx) 1969-08-21
BE728562A (xx) 1969-08-18
DE1907971B2 (de) 1978-10-12
DE1907971C3 (de) 1979-06-13
GB1253873A (en) 1971-11-17
FR1564686A (xx) 1969-04-25
US3621256A (en) 1971-11-16

Similar Documents

Publication Publication Date Title
AU1946070A (xx)
AU428130B2 (xx)
AU2374870A (xx)
AU5184069A (xx)
AU6168869A (xx)
AU6171569A (xx)
AU429879B2 (xx)
AU416157B2 (xx)
AU2581067A (xx)
AU4811568A (xx)
AU421558B1 (xx)
AU4744468A (xx)
AU3789668A (xx)
AU3224368A (xx)
AU2580267A (xx)
AU479393A (xx)
BE642636A (xx)
AU4558658A (xx)
AU463027A (xx)
AU4464266A (xx)
BE709484A (xx)
AU479894A (xx)
BE709479A (xx)
AU4270368A (xx)
BE709446A (xx)