SE348668B - - Google Patents
Info
- Publication number
- SE348668B SE348668B SE09540/70A SE954070A SE348668B SE 348668 B SE348668 B SE 348668B SE 09540/70 A SE09540/70 A SE 09540/70A SE 954070 A SE954070 A SE 954070A SE 348668 B SE348668 B SE 348668B
- Authority
- SE
- Sweden
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/286—Al as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29123—Magnesium [Mg] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29124—Aluminium [Al] as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01012—Magnesium [Mg]
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- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01023—Vanadium [V]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01039—Yttrium [Y]
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/01047—Silver [Ag]
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- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H01L2924/01061—Promethium [Pm]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/014—Solder alloys
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1935143A DE1935143C3 (de) | 1969-07-11 | 1969-07-11 | Hartlotverbindung bei Halbleiter-Bauelementen und Verfahren zu ihrer Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
SE348668B true SE348668B (de) | 1972-09-11 |
Family
ID=5739467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE09540/70A SE348668B (de) | 1969-07-11 | 1970-07-09 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3755882A (de) |
CH (1) | CH551840A (de) |
DE (1) | DE1935143C3 (de) |
ES (1) | ES382117A1 (de) |
FR (1) | FR2054035A5 (de) |
GB (1) | GB1314044A (de) |
SE (1) | SE348668B (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4036602A (en) * | 1975-11-26 | 1977-07-19 | Chromalloy American Corporation | Diffusion coating of magnesium in metal substrates |
JP5548167B2 (ja) * | 2011-07-11 | 2014-07-16 | 日本発條株式会社 | 積層体及び積層体の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA683210A (en) * | 1964-03-31 | P. Skinner Ransom | Brazing dissimilar metal members | |
BE577086A (de) * | 1958-04-03 | 1900-01-01 | ||
NL268834A (de) * | 1960-09-02 | |||
NL279651A (de) * | 1961-07-14 | |||
US3337947A (en) * | 1964-06-29 | 1967-08-29 | Aluminum Co Of America | Method of joining electrical contacts to aluminum parts |
US3375143A (en) * | 1964-09-29 | 1968-03-26 | Melpar Inc | Method of making tunnel diode |
CH423997A (de) * | 1965-06-24 | 1966-11-15 | Bbc Brown Boveri & Cie | Halbleiteranordnung |
US3447236A (en) * | 1966-02-11 | 1969-06-03 | Western Electric Co | Method of bonding an electrical part to an electrical contact |
US3478416A (en) * | 1967-02-15 | 1969-11-18 | North American Rockwell | Bonding of beryllium members |
US3409974A (en) * | 1967-07-07 | 1968-11-12 | Alloys Unltd Inc | Process of making tungsten-based composite materials |
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1969
- 1969-07-11 DE DE1935143A patent/DE1935143C3/de not_active Expired
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1970
- 1970-07-02 FR FR7024532A patent/FR2054035A5/fr not_active Expired
- 1970-07-02 ES ES382117A patent/ES382117A1/es not_active Expired
- 1970-07-08 CH CH1036170A patent/CH551840A/de not_active IP Right Cessation
- 1970-07-09 SE SE09540/70A patent/SE348668B/xx unknown
- 1970-07-13 GB GB3386870A patent/GB1314044A/en not_active Expired
- 1970-07-13 US US00054344A patent/US3755882A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1935143B2 (de) | 1974-08-15 |
DE1935143A1 (de) | 1971-04-22 |
CH551840A (de) | 1974-07-31 |
FR2054035A5 (de) | 1971-04-16 |
ES382117A1 (es) | 1972-11-01 |
US3755882A (en) | 1973-09-04 |
DE1935143C3 (de) | 1975-04-17 |
GB1314044A (en) | 1973-04-18 |