SE344849B - - Google Patents
Info
- Publication number
- SE344849B SE344849B SE17797/69A SE1779769A SE344849B SE 344849 B SE344849 B SE 344849B SE 17797/69 A SE17797/69 A SE 17797/69A SE 1779769 A SE1779769 A SE 1779769A SE 344849 B SE344849 B SE 344849B
- Authority
- SE
- Sweden
Links
Classifications
-
- H10P14/46—
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H10P32/1408—
-
- H10P32/171—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681816082 DE1816082A1 (de) | 1968-12-20 | 1968-12-20 | Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE344849B true SE344849B (enExample) | 1972-05-02 |
Family
ID=5716945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE17797/69A SE344849B (enExample) | 1968-12-20 | 1969-12-22 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5011233B1 (enExample) |
| CH (1) | CH519788A (enExample) |
| DE (1) | DE1816082A1 (enExample) |
| FR (1) | FR2026659A1 (enExample) |
| GB (1) | GB1250585A (enExample) |
| NL (1) | NL6918777A (enExample) |
| SE (1) | SE344849B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH579827A5 (enExample) * | 1974-11-04 | 1976-09-15 | Bbc Brown Boveri & Cie | |
| US8053867B2 (en) * | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
| US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
| US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
| US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
-
1968
- 1968-12-20 DE DE19681816082 patent/DE1816082A1/de not_active Withdrawn
-
1969
- 1969-12-15 NL NL6918777A patent/NL6918777A/xx unknown
- 1969-12-16 CH CH1869469A patent/CH519788A/de not_active IP Right Cessation
- 1969-12-17 FR FR6943696A patent/FR2026659A1/fr not_active Withdrawn
- 1969-12-19 GB GB1250585D patent/GB1250585A/en not_active Expired
- 1969-12-20 JP JP44102124A patent/JPS5011233B1/ja active Pending
- 1969-12-22 SE SE17797/69A patent/SE344849B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2026659A1 (enExample) | 1970-09-18 |
| DE1816082A1 (de) | 1970-06-25 |
| JPS5011233B1 (enExample) | 1975-04-28 |
| CH519788A (de) | 1972-02-29 |
| NL6918777A (enExample) | 1970-06-23 |
| DE1816082B2 (enExample) | 1978-03-02 |
| GB1250585A (enExample) | 1971-10-20 |