SE336008B - - Google Patents

Info

Publication number
SE336008B
SE336008B SE11912/65A SE1191265A SE336008B SE 336008 B SE336008 B SE 336008B SE 11912/65 A SE11912/65 A SE 11912/65A SE 1191265 A SE1191265 A SE 1191265A SE 336008 B SE336008 B SE 336008B
Authority
SE
Sweden
Prior art keywords
america
sept
heading
aug
differ
Prior art date
Application number
SE11912/65A
Other languages
English (en)
Inventor
J Avins
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE336008B publication Critical patent/SE336008B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G11/00Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/06Limiters of angle-modulated signals; such limiters combined with discriminators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/14Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of semiconductor devices having more than two electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/16Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of electromechanical resonators
SE11912/65A 1964-09-14 1965-09-13 SE336008B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US396206A US3355669A (en) 1964-09-14 1964-09-14 Fm detector system suitable for integration in a monolithic semiconductor body

Publications (1)

Publication Number Publication Date
SE336008B true SE336008B (xx) 1971-06-21

Family

ID=23566290

Family Applications (1)

Application Number Title Priority Date Filing Date
SE11912/65A SE336008B (xx) 1964-09-14 1965-09-13

Country Status (10)

Country Link
US (1) US3355669A (xx)
JP (1) JPS5319894B1 (xx)
BE (1) BE669567A (xx)
BR (1) BR6573151D0 (xx)
DE (1) DE1466237B1 (xx)
ES (1) ES317386A1 (xx)
FR (1) FR1454573A (xx)
GB (2) GB1124277A (xx)
NL (1) NL152723B (xx)
SE (1) SE336008B (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462694A (en) * 1964-09-14 1969-08-19 Rca Corp Frequency modulation detector circuit providing balanced detection over a wide range of signal levels
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3473133A (en) * 1966-12-30 1969-10-14 Motorola Inc Pulse counter detector
US3519944A (en) * 1968-02-15 1970-07-07 Rca Corp Angle modulation discriminator-detector circuit
US3571713A (en) * 1968-05-27 1971-03-23 James D Zachary Low frequency wide band fm demodulators
US3544862A (en) * 1968-09-20 1970-12-01 Westinghouse Electric Corp Integrated semiconductor and pn junction capacitor
US3628064A (en) * 1969-03-13 1971-12-14 Signetics Corp Voltage to frequency converter with constant current sources
FR2036530A5 (xx) * 1969-03-24 1970-12-24 Radiotechnique Compelec
US3701914A (en) * 1970-03-03 1972-10-31 Bell Telephone Labor Inc Storage tube with array on pnpn diodes
US4528513A (en) * 1983-04-25 1985-07-09 Rca Corporation Digital FM ratio detector with gain-controlled filter
GB2179495B (en) * 1985-08-09 1989-07-26 Plessey Co Plc Protection structures for integrated circuits
US5909147A (en) * 1997-09-19 1999-06-01 Honeywell Inc. Amplifier having DC coupled gain stages

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747455A (en) * 1954-08-20 1956-05-29 Union Carbide & Carbon Corp Differential refractometer
US2821629A (en) * 1955-08-31 1958-01-28 Tele Dynamics Inc Limiter circuit
US2912573A (en) * 1956-10-17 1959-11-10 Motorola Inc Receiver having frequency-and-amplitude-modulation-detecting limiter stage
US2975364A (en) * 1957-09-09 1961-03-14 Dresser Ind Square wave shaping circuit and attenuator
US3102985A (en) * 1960-10-28 1963-09-03 Hafner Alexander Transistor pulse amplifier
US3213380A (en) * 1961-06-21 1965-10-19 Westinghouse Electric Corp Detector circuitry and semiconductor device therefor
US3284713A (en) * 1963-03-26 1966-11-08 Motorola Inc Emitter coupled high frequency amplifier
GB1007079A (en) * 1963-04-23 1965-10-13 Philips Electronic Associated Improvements in or relating to transistorized frequency detectors

Also Published As

Publication number Publication date
DE1466237B1 (de) 1970-10-01
GB1124277A (en) 1968-08-21
FR1454573A (fr) 1966-02-11
US3355669A (en) 1967-11-28
BE669567A (xx) 1965-12-31
GB1124274A (en) 1968-08-21
BR6573151D0 (pt) 1973-07-03
JPS5319894B1 (xx) 1978-06-23
NL6511772A (xx) 1966-03-15
NL152723B (nl) 1977-03-15
ES317386A1 (es) 1965-12-01

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