SE331857B - - Google Patents

Info

Publication number
SE331857B
SE331857B SE09193/67*A SE919367A SE331857B SE 331857 B SE331857 B SE 331857B SE 919367 A SE919367 A SE 919367A SE 331857 B SE331857 B SE 331857B
Authority
SE
Sweden
Application number
SE09193/67*A
Inventor
W Schembs
W Meer
H Hargasser
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE331857B publication Critical patent/SE331857B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
SE09193/67*A 1966-07-06 1967-06-26 SE331857B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0104643 1966-07-06

Publications (1)

Publication Number Publication Date
SE331857B true SE331857B (de) 1971-01-18

Family

ID=7526012

Family Applications (1)

Application Number Title Priority Date Filing Date
SE09193/67*A SE331857B (de) 1966-07-06 1967-06-26

Country Status (7)

Country Link
US (1) US3450964A (de)
AT (1) AT273232B (de)
CH (1) CH461647A (de)
DE (1) DE1564648A1 (de)
GB (1) GB1124436A (de)
NL (1) NL6709167A (de)
SE (1) SE331857B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03142934A (ja) * 1989-10-30 1991-06-18 Mitsubishi Electric Corp 半導体集積回路装置の配線接続構造

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2970896A (en) * 1958-04-25 1961-02-07 Texas Instruments Inc Method for making semiconductor devices
NL290931A (de) * 1963-03-29 1900-01-01
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction
US3327181A (en) * 1964-03-24 1967-06-20 Crystalonics Inc Epitaxial transistor and method of manufacture

Also Published As

Publication number Publication date
AT273232B (de) 1969-08-11
US3450964A (en) 1969-06-17
CH461647A (de) 1968-08-31
DE1564648A1 (de) 1970-02-12
GB1124436A (en) 1968-08-21
NL6709167A (de) 1968-01-08

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