SE320108B - - Google Patents

Info

Publication number
SE320108B
SE320108B SE3375/64A SE337564A SE320108B SE 320108 B SE320108 B SE 320108B SE 3375/64 A SE3375/64 A SE 3375/64A SE 337564 A SE337564 A SE 337564A SE 320108 B SE320108 B SE 320108B
Authority
SE
Sweden
Application number
SE3375/64A
Inventor
M Ames
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE320108B publication Critical patent/SE320108B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0092—Measures to linearise or reduce distortion of oscillator characteristics

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
SE3375/64A 1963-03-19 1964-03-18 SE320108B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US266253A US3202840A (en) 1963-03-19 1963-03-19 Frequency doubler employing two push-pull pulsed internal field effect devices

Publications (1)

Publication Number Publication Date
SE320108B true SE320108B (xx) 1970-02-02

Family

ID=23013811

Family Applications (1)

Application Number Title Priority Date Filing Date
SE3375/64A SE320108B (xx) 1963-03-19 1964-03-18

Country Status (5)

Country Link
US (1) US3202840A (xx)
BE (1) BE645313A (xx)
GB (1) GB1021903A (xx)
NL (1) NL6402879A (xx)
SE (1) SE320108B (xx)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301882A (xx) * 1962-12-17
US3327133A (en) * 1963-05-28 1967-06-20 Rca Corp Electronic switching
US3311756A (en) * 1963-06-24 1967-03-28 Hitachi Seisakusho Tokyoto Kk Electronic circuit having a fieldeffect transistor therein
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3339086A (en) * 1964-06-11 1967-08-29 Itt Surface controlled avalanche transistor
US3313988A (en) * 1964-08-31 1967-04-11 Gen Dynamics Corp Field effect semiconductor device and method of forming same
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
FR1486264A (xx) * 1965-07-08 1967-10-05
US3492511A (en) * 1966-12-22 1970-01-27 Texas Instruments Inc High input impedance circuit for a field effect transistor including capacitive gate biasing means
US3569732A (en) * 1969-12-15 1971-03-09 Shell Oil Co Inductanceless igfet frequency doubler
US3662187A (en) * 1971-07-01 1972-05-09 Us Navy Fast analog multiplier
US4052673A (en) * 1976-08-30 1977-10-04 Rca Corporation Combined controlled oscillator and frequency multiplier
WO2015090456A1 (en) * 2013-12-20 2015-06-25 Telefonaktiebolaget L M Ericsson (Publ) A novel frequency multiplier
US10958216B2 (en) 2019-08-22 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and operation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093752A (en) * 1959-08-24 1963-06-11 Westinghouse Electric Corp Function generator and frequency doubler using non-linear characteristics of semiconductive device

Also Published As

Publication number Publication date
NL6402879A (xx) 1964-09-21
US3202840A (en) 1965-08-24
GB1021903A (en) 1966-03-09
BE645313A (xx) 1964-07-16

Similar Documents

Publication Publication Date Title
AT260747B (xx)
BE627012A (xx)
BE623220A (xx)
BE627025A (xx)
BE465565A (xx)
BE507458A (xx)
BE533484A (xx)
BE547422A (xx)
BE571209A (xx)
BE582314A (xx)
BE603935A (xx)
BE608372A (xx)
BE612803A (xx)
BE614220A (xx)
BE616247A (xx)
BE616830A (xx)
BE626867A (xx)
BE619061A (xx)
BE620325A (xx)
BE621232A (xx)
BE621517A (xx)
BE622160A (xx)
BE623117A (xx)
BE623162A (xx)
BE616967A (xx)