NL6402879A - - Google Patents

Info

Publication number
NL6402879A
NL6402879A NL6402879A NL6402879A NL6402879A NL 6402879 A NL6402879 A NL 6402879A NL 6402879 A NL6402879 A NL 6402879A NL 6402879 A NL6402879 A NL 6402879A NL 6402879 A NL6402879 A NL 6402879A
Authority
NL
Netherlands
Application number
NL6402879A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6402879A publication Critical patent/NL6402879A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0092Measures to linearise or reduce distortion of oscillator characteristics

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
NL6402879A 1963-03-19 1964-03-18 NL6402879A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US266253A US3202840A (en) 1963-03-19 1963-03-19 Frequency doubler employing two push-pull pulsed internal field effect devices

Publications (1)

Publication Number Publication Date
NL6402879A true NL6402879A (xx) 1964-09-21

Family

ID=23013811

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6402879A NL6402879A (xx) 1963-03-19 1964-03-18

Country Status (5)

Country Link
US (1) US3202840A (xx)
BE (1) BE645313A (xx)
GB (1) GB1021903A (xx)
NL (1) NL6402879A (xx)
SE (1) SE320108B (xx)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301882A (xx) * 1962-12-17
US3327133A (en) * 1963-05-28 1967-06-20 Rca Corp Electronic switching
US3311756A (en) * 1963-06-24 1967-03-28 Hitachi Seisakusho Tokyoto Kk Electronic circuit having a fieldeffect transistor therein
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3339086A (en) * 1964-06-11 1967-08-29 Itt Surface controlled avalanche transistor
US3313988A (en) * 1964-08-31 1967-04-11 Gen Dynamics Corp Field effect semiconductor device and method of forming same
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
FR1486264A (xx) * 1965-07-08 1967-10-05
US3492511A (en) * 1966-12-22 1970-01-27 Texas Instruments Inc High input impedance circuit for a field effect transistor including capacitive gate biasing means
US3569732A (en) * 1969-12-15 1971-03-09 Shell Oil Co Inductanceless igfet frequency doubler
US3662187A (en) * 1971-07-01 1972-05-09 Us Navy Fast analog multiplier
US4052673A (en) * 1976-08-30 1977-10-04 Rca Corporation Combined controlled oscillator and frequency multiplier
WO2015090456A1 (en) * 2013-12-20 2015-06-25 Telefonaktiebolaget L M Ericsson (Publ) A novel frequency multiplier
US10958216B2 (en) 2019-08-22 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and operation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3093752A (en) * 1959-08-24 1963-06-11 Westinghouse Electric Corp Function generator and frequency doubler using non-linear characteristics of semiconductive device

Also Published As

Publication number Publication date
US3202840A (en) 1965-08-24
GB1021903A (en) 1966-03-09
SE320108B (xx) 1970-02-02
BE645313A (xx) 1964-07-16

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