SE319806B - - Google Patents
Info
- Publication number
- SE319806B SE319806B SE10127/64A SE1012764A SE319806B SE 319806 B SE319806 B SE 319806B SE 10127/64 A SE10127/64 A SE 10127/64A SE 1012764 A SE1012764 A SE 1012764A SE 319806 B SE319806 B SE 319806B
- Authority
- SE
- Sweden
- Prior art keywords
- drain
- output
- input
- capacitance
- tuning
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003472 neutralizing effect Effects 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
- H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/02—Details
- H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
- H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
- H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Superheterodyne Receivers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US304091A US3229120A (en) | 1963-08-23 | 1963-08-23 | Electrically tunable field-effect transistor circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE319806B true SE319806B (pt) | 1970-01-26 |
Family
ID=23175009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE10127/64A SE319806B (pt) | 1963-08-23 | 1964-08-21 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3229120A (pt) |
| BE (1) | BE652018A (pt) |
| BR (1) | BR6461686D0 (pt) |
| DE (1) | DE1252276C2 (pt) |
| GB (1) | GB1076924A (pt) |
| NL (1) | NL6409697A (pt) |
| SE (1) | SE319806B (pt) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL301882A (pt) * | 1962-12-17 | |||
| US3315096A (en) * | 1963-02-22 | 1967-04-18 | Rca Corp | Electrical circuit including an insulated-gate field effect transistor having an epitaxial layer of relatively lightly doped semiconductor material on a base layer of more highly doped semiconductor material for improved operation at ultra-high frequencies |
| US3404341A (en) * | 1964-04-03 | 1968-10-01 | Xerox Corp | Electrometer utilizing a dual purpose field-effect transistor |
| US3348154A (en) * | 1965-12-14 | 1967-10-17 | Scott Inc H H | Signal mixing and conversion apparatus employing field effect transistor with squarelaw operation |
| US3348155A (en) * | 1966-02-10 | 1967-10-17 | Scott Inc H H | Oscillator-converter apparatus employing field effect transistor with neutralizationand square law operation |
| US5828148A (en) * | 1997-03-20 | 1998-10-27 | Sundstrand Corporation | Method and apparatus for reducing windage losses in rotating equipment and electric motor/generator employing same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3010033A (en) * | 1958-01-02 | 1961-11-21 | Clevite Corp | Field effect transistor |
| NL265382A (pt) * | 1960-03-08 |
-
0
- DE DENDAT1252276D patent/DE1252276C2/de not_active Expired
-
1963
- 1963-08-23 US US304091A patent/US3229120A/en not_active Expired - Lifetime
-
1964
- 1964-08-05 GB GB31880/64A patent/GB1076924A/en not_active Expired
- 1964-08-11 BR BR161686/64A patent/BR6461686D0/pt unknown
- 1964-08-19 BE BE652018A patent/BE652018A/xx unknown
- 1964-08-21 NL NL6409697A patent/NL6409697A/xx unknown
- 1964-08-21 SE SE10127/64A patent/SE319806B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3229120A (en) | 1966-01-11 |
| BR6461686D0 (pt) | 1973-09-18 |
| GB1076924A (en) | 1967-07-26 |
| NL6409697A (pt) | 1965-02-24 |
| DE1252276C2 (de) | 1974-05-30 |
| DE1252276B (de) | 1967-10-19 |
| BE652018A (pt) | 1964-12-16 |
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