NL6409697A - - Google Patents

Info

Publication number
NL6409697A
NL6409697A NL6409697A NL6409697A NL6409697A NL 6409697 A NL6409697 A NL 6409697A NL 6409697 A NL6409697 A NL 6409697A NL 6409697 A NL6409697 A NL 6409697A NL 6409697 A NL6409697 A NL 6409697A
Authority
NL
Netherlands
Application number
NL6409697A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6409697A publication Critical patent/NL6409697A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03JTUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00Continuous tuning
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03JTUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00Continuous tuning
    • H03J3/02Details
    • H03J3/16Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Superheterodyne Receivers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
NL6409697A 1963-08-23 1964-08-21 NL6409697A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US304091A US3229120A (en) 1963-08-23 1963-08-23 Electrically tunable field-effect transistor circuit

Publications (1)

Publication Number Publication Date
NL6409697A true NL6409697A (pt) 1965-02-24

Family

ID=23175009

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6409697A NL6409697A (pt) 1963-08-23 1964-08-21

Country Status (7)

Country Link
US (1) US3229120A (pt)
BE (1) BE652018A (pt)
BR (1) BR6461686D0 (pt)
DE (1) DE1252276C2 (pt)
GB (1) GB1076924A (pt)
NL (1) NL6409697A (pt)
SE (1) SE319806B (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301882A (pt) * 1962-12-17
US3315096A (en) * 1963-02-22 1967-04-18 Rca Corp Electrical circuit including an insulated-gate field effect transistor having an epitaxial layer of relatively lightly doped semiconductor material on a base layer of more highly doped semiconductor material for improved operation at ultra-high frequencies
US3404341A (en) * 1964-04-03 1968-10-01 Xerox Corp Electrometer utilizing a dual purpose field-effect transistor
US3348154A (en) * 1965-12-14 1967-10-17 Scott Inc H H Signal mixing and conversion apparatus employing field effect transistor with squarelaw operation
US3348155A (en) * 1966-02-10 1967-10-17 Scott Inc H H Oscillator-converter apparatus employing field effect transistor with neutralizationand square law operation
US5828148A (en) * 1997-03-20 1998-10-27 Sundstrand Corporation Method and apparatus for reducing windage losses in rotating equipment and electric motor/generator employing same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
NL265382A (pt) * 1960-03-08

Also Published As

Publication number Publication date
US3229120A (en) 1966-01-11
BR6461686D0 (pt) 1973-09-18
GB1076924A (en) 1967-07-26
SE319806B (pt) 1970-01-26
DE1252276C2 (de) 1974-05-30
DE1252276B (de) 1967-10-19
BE652018A (pt) 1964-12-16

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