SE318946B - - Google Patents

Info

Publication number
SE318946B
SE318946B SE15265/64A SE1526564A SE318946B SE 318946 B SE318946 B SE 318946B SE 15265/64 A SE15265/64 A SE 15265/64A SE 1526564 A SE1526564 A SE 1526564A SE 318946 B SE318946 B SE 318946B
Authority
SE
Sweden
Application number
SE15265/64A
Inventor
M Sekely
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE318946B publication Critical patent/SE318946B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/46One-port networks
    • H03H11/48One-port networks simulating reactances
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813Combinations of field-effect devices and capacitor only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
SE15265/64A 1963-12-17 1964-12-17 SE318946B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US331271A US3272989A (en) 1963-12-17 1963-12-17 Integrated electrical circuit

Publications (1)

Publication Number Publication Date
SE318946B true SE318946B (enExample) 1969-12-22

Family

ID=23293279

Family Applications (1)

Application Number Title Priority Date Filing Date
SE15265/64A SE318946B (enExample) 1963-12-17 1964-12-17

Country Status (4)

Country Link
US (1) US3272989A (enExample)
DE (1) DE1274738B (enExample)
GB (1) GB1076614A (enExample)
SE (1) SE318946B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3386016A (en) * 1965-08-02 1968-05-28 Sprague Electric Co Field effect transistor with an induced p-type channel by means of high work function metal or oxide
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
US5093699A (en) * 1990-03-12 1992-03-03 Texas A & M University System Gate adjusted resonant tunnel diode device and method of manufacture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070762A (en) * 1960-05-02 1962-12-25 Texas Instruments Inc Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator
US3174112A (en) * 1960-07-29 1965-03-16 Westinghouse Electric Corp Semiconductor devices providing the functions of a plurality of conventional components
US3160835A (en) * 1960-11-21 1964-12-08 Westinghouse Electric Corp Monolithic semiconductor circuit with energy storage junction and feedback to active transistor to produce two terminal inductance
US3165708A (en) * 1961-04-28 1965-01-12 Westinghouse Electric Corp Monolithic semiconductor oscillator
US3170126A (en) * 1961-07-24 1965-02-16 Westinghouse Electric Corp Semiconductor amplitude modulator apparatus

Also Published As

Publication number Publication date
US3272989A (en) 1966-09-13
DE1274738B (de) 1968-08-08
GB1076614A (en) 1967-07-19

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