SE318946B - - Google Patents
Info
- Publication number
- SE318946B SE318946B SE15265/64A SE1526564A SE318946B SE 318946 B SE318946 B SE 318946B SE 15265/64 A SE15265/64 A SE 15265/64A SE 1526564 A SE1526564 A SE 1526564A SE 318946 B SE318946 B SE 318946B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/46—One-port networks
- H03H11/48—One-port networks simulating reactances
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/813—Combinations of field-effect devices and capacitor only
-
- H10W20/40—
-
- H10W20/497—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US331271A US3272989A (en) | 1963-12-17 | 1963-12-17 | Integrated electrical circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE318946B true SE318946B (OSRAM) | 1969-12-22 |
Family
ID=23293279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE15265/64A SE318946B (OSRAM) | 1963-12-17 | 1964-12-17 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3272989A (OSRAM) |
| DE (1) | DE1274738B (OSRAM) |
| GB (1) | GB1076614A (OSRAM) |
| SE (1) | SE318946B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3373295A (en) * | 1965-04-27 | 1968-03-12 | Aerojet General Co | Memory element |
| US3403270A (en) * | 1965-05-10 | 1968-09-24 | Gen Micro Electronics Inc | Overvoltage protective circuit for insulated gate field effect transistor |
| US3386016A (en) * | 1965-08-02 | 1968-05-28 | Sprague Electric Co | Field effect transistor with an induced p-type channel by means of high work function metal or oxide |
| US3469155A (en) * | 1966-09-23 | 1969-09-23 | Westinghouse Electric Corp | Punch-through means integrated with mos type devices for protection against insulation layer breakdown |
| US3868721A (en) * | 1970-11-02 | 1975-02-25 | Motorola Inc | Diffusion guarded metal-oxide-silicon field effect transistors |
| US5093699A (en) * | 1990-03-12 | 1992-03-03 | Texas A & M University System | Gate adjusted resonant tunnel diode device and method of manufacture |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3070762A (en) * | 1960-05-02 | 1962-12-25 | Texas Instruments Inc | Voltage tuned resistance-capacitance filter, consisting of integrated semiconductor elements usable in phase shift oscillator |
| US3174112A (en) * | 1960-07-29 | 1965-03-16 | Westinghouse Electric Corp | Semiconductor devices providing the functions of a plurality of conventional components |
| US3160835A (en) * | 1960-11-21 | 1964-12-08 | Westinghouse Electric Corp | Monolithic semiconductor circuit with energy storage junction and feedback to active transistor to produce two terminal inductance |
| US3165708A (en) * | 1961-04-28 | 1965-01-12 | Westinghouse Electric Corp | Monolithic semiconductor oscillator |
| US3170126A (en) * | 1961-07-24 | 1965-02-16 | Westinghouse Electric Corp | Semiconductor amplitude modulator apparatus |
-
1963
- 1963-12-17 US US331271A patent/US3272989A/en not_active Expired - Lifetime
-
1964
- 1964-11-18 GB GB46950/64A patent/GB1076614A/en not_active Expired
- 1964-12-15 DE DER39462A patent/DE1274738B/de active Pending
- 1964-12-17 SE SE15265/64A patent/SE318946B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1076614A (en) | 1967-07-19 |
| US3272989A (en) | 1966-09-13 |
| DE1274738B (de) | 1968-08-08 |