SE316535B - - Google Patents

Info

Publication number
SE316535B
SE316535B SE3769/66A SE376966A SE316535B SE 316535 B SE316535 B SE 316535B SE 3769/66 A SE3769/66 A SE 3769/66A SE 376966 A SE376966 A SE 376966A SE 316535 B SE316535 B SE 316535B
Authority
SE
Sweden
Application number
SE3769/66A
Inventor
R Zuleeg
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of SE316535B publication Critical patent/SE316535B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
SE3769/66A 1965-03-23 1966-03-22 SE316535B (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US442079A US3354362A (en) 1965-03-23 1965-03-23 Planar multi-channel field-effect tetrode

Publications (1)

Publication Number Publication Date
SE316535B true SE316535B (cs) 1969-10-27

Family

ID=23755465

Family Applications (1)

Application Number Title Priority Date Filing Date
SE3769/66A SE316535B (cs) 1965-03-23 1966-03-22

Country Status (4)

Country Link
US (1) US3354362A (cs)
DE (1) DE1564068A1 (cs)
GB (1) GB1071976A (cs)
SE (1) SE316535B (cs)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
US3466511A (en) * 1967-05-05 1969-09-09 Westinghouse Electric Corp Insulated gate field effect transistors with means preventing overvoltage feedthrough by auxiliary structure providing bipolar transistor action through substrate
US3456166A (en) * 1967-05-11 1969-07-15 Teledyne Inc Junction capacitor
DE1764911A1 (de) * 1968-09-02 1971-12-02 Telefunken Patent Unipolaranordnung
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet
JPS5838938B2 (ja) * 1976-08-03 1983-08-26 財団法人半導体研究振興会 半導体集積回路
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
EP0167812A1 (en) * 1984-06-08 1986-01-15 Eaton Corporation Double gate vertical JFET
US20090072314A1 (en) * 2007-09-19 2009-03-19 Texas Instruments Incorporated Depletion Mode Field Effect Transistor for ESD Protection

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
US3025438A (en) * 1959-09-18 1962-03-13 Tungsol Electric Inc Field effect transistor
GB912114A (en) * 1960-09-26 1962-12-05 Westinghouse Electric Corp Semiconductor devices
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
NL128995C (cs) * 1962-08-03
US3252003A (en) * 1962-09-10 1966-05-17 Westinghouse Electric Corp Unipolar transistor
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means

Also Published As

Publication number Publication date
US3354362A (en) 1967-11-21
DE1564068A1 (de) 1969-12-18
GB1071976A (en) 1967-06-14

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