SE310392B - - Google Patents

Info

Publication number
SE310392B
SE310392B SE9560/65A SE956065A SE310392B SE 310392 B SE310392 B SE 310392B SE 9560/65 A SE9560/65 A SE 9560/65A SE 956065 A SE956065 A SE 956065A SE 310392 B SE310392 B SE 310392B
Authority
SE
Sweden
Application number
SE9560/65A
Inventor
Cecco A De
I Somos
D Piccone
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE310392B publication Critical patent/SE310392B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
SE9560/65A 1964-07-27 1965-07-20 SE310392B (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38532364A 1964-07-27 1964-07-27
US514734A US3408545A (en) 1964-07-27 1965-10-22 Semiconductor rectifier with improved turn-on and turn-off characteristics

Publications (1)

Publication Number Publication Date
SE310392B true SE310392B (xx) 1969-04-28

Family

ID=27010966

Family Applications (2)

Application Number Title Priority Date Filing Date
SE9560/65A SE310392B (xx) 1964-07-27 1965-07-20
SE14305/66A SE333779B (xx) 1964-07-27 1966-10-20

Family Applications After (1)

Application Number Title Priority Date Filing Date
SE14305/66A SE333779B (xx) 1964-07-27 1966-10-20

Country Status (4)

Country Link
US (1) US3408545A (xx)
CH (2) CH438493A (xx)
GB (2) GB1112301A (xx)
SE (2) SE310392B (xx)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE311701B (xx) * 1966-07-07 1969-06-23 Asea Ab
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
US3638042A (en) * 1969-07-31 1972-01-25 Borg Warner Thyristor with added gate and fast turn-off circuit
BE755356A (fr) * 1969-08-27 1971-03-01 Westinghouse Electric Corp Interrupteur a semi conducteur a grille de commande pour courant eleve
US3688164A (en) * 1969-10-01 1972-08-29 Hitachi Ltd Multi-layer-type switch device
BE787597A (fr) * 1971-08-16 1973-02-16 Siemens Ag Thyristor
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
US3943549A (en) * 1972-03-15 1976-03-09 Bbc Brown, Boveri & Company, Limited Thyristor
DE2237086C3 (de) * 1972-07-28 1979-01-18 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbares Halbleitergleichrichterbauelement
JPS4974486A (xx) * 1972-11-17 1974-07-18
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
DE2534703C3 (de) * 1975-08-04 1980-03-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2549614C3 (de) * 1975-11-05 1979-05-10 Nikolai Michailovitsch Belenkov Halbleiterschalter
US4176371A (en) * 1976-01-09 1979-11-27 Westinghouse Electric Corp. Thyristor fired by overvoltage
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
US4357621A (en) * 1976-05-31 1982-11-02 Tokyo Shibaura Electric Co., Ltd. Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
US4079403A (en) * 1976-11-01 1978-03-14 Electric Power Research Institute, Inc. Thyristor device with self-protection against breakover turn-on failure
JPS53110483A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Thyristor
US4314266A (en) * 1978-07-20 1982-02-02 Electric Power Research Institute, Inc. Thyristor with voltage breakover current control separated from main emitter by current limit region
US4908687A (en) * 1984-06-29 1990-03-13 General Electric Company Controlled turn-on thyristor
EP0190162B1 (en) * 1984-06-29 1990-11-07 General Electric Company Controlled turn-on thyristor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2862115A (en) * 1955-07-13 1958-11-25 Bell Telephone Labor Inc Semiconductor circuit controlling devices
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
NL129185C (xx) * 1960-06-10
GB942901A (en) * 1961-08-29 1963-11-27 Ass Elect Ind Improvements in controlled semi-conductor rectifiers
BE624012A (xx) * 1961-10-27
US3277310A (en) * 1962-11-13 1966-10-04 Texas Instruments Inc Isolated base four-layer semiconductor system
NL302103A (xx) * 1962-12-19
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
BR6462522D0 (pt) * 1963-10-28 1973-05-15 Rca Corp Dispositivos semicondutores e processo de fabrica-los

Also Published As

Publication number Publication date
GB1161500A (en) 1969-08-13
SE333779B (xx) 1971-03-29
DE1564040B2 (de) 1972-11-30
GB1112301A (en) 1968-05-01
DE1564040A1 (de) 1970-09-17
DE1489931B2 (de) 1972-06-15
CH438493A (de) 1967-06-30
US3408545A (en) 1968-10-29
CH465721A (de) 1968-11-30
DE1489931A1 (de) 1969-06-04

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