SE304174B - - Google Patents

Info

Publication number
SE304174B
SE304174B SE8050/60A SE805060A SE304174B SE 304174 B SE304174 B SE 304174B SE 8050/60 A SE8050/60 A SE 8050/60A SE 805060 A SE805060 A SE 805060A SE 304174 B SE304174 B SE 304174B
Authority
SE
Sweden
Application number
SE8050/60A
Inventor
F Endermann
W Neugebauer
M Reichel
Original Assignee
Kalle Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kalle Ag filed Critical Kalle Ag
Publication of SE304174B publication Critical patent/SE304174B/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SE8050/60A 1959-08-29 1960-08-23 SE304174B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1422474A DE1422474C3 (de) 1959-08-29 1959-08-29 Lichtempfindliches Gemisch

Publications (1)

Publication Number Publication Date
SE304174B true SE304174B (zh) 1968-09-16

Family

ID=7221423

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8050/60A SE304174B (zh) 1959-08-29 1960-08-23

Country Status (7)

Country Link
US (1) US3148983A (zh)
BE (1) BE594235A (zh)
CH (1) CH383776A (zh)
DE (1) DE1422474C3 (zh)
GB (1) GB942564A (zh)
NL (2) NL131386C (zh)
SE (1) SE304174B (zh)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868254A (en) * 1972-11-29 1975-02-25 Gaf Corp Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants
US4174222A (en) * 1975-05-24 1979-11-13 Tokyo Ohka Kogyo Kabushiki Kaisha Positive-type O-quinone diazide containing photoresist compositions
DE2547905C2 (de) * 1975-10-25 1985-11-21 Hoechst Ag, 6230 Frankfurt Lichtempfindliches Aufzeichnungsmaterial
JPS561044A (en) * 1979-06-16 1981-01-08 Konishiroku Photo Ind Co Ltd Photosensitive composition
JPS59165053A (ja) * 1983-03-11 1984-09-18 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
DE3220816A1 (de) * 1982-06-03 1983-12-08 Merck Patent Gmbh, 6100 Darmstadt Lichtempfindliche komponenten fuer positiv arbeitende fotoresistmaterialien
DE3421471A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Perfluoralkylgruppen aufweisende 1,2-naphthochinondiazidverbindungen und reproduktionsmaterialien, die diese verbindungen enthalten
US4596763A (en) * 1984-10-01 1986-06-24 American Hoechst Corporation Positive photoresist processing with mid U-V range exposure
JPS61118744A (ja) * 1984-11-15 1986-06-06 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
JPS61141441A (ja) * 1984-12-14 1986-06-28 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US4929536A (en) * 1985-08-12 1990-05-29 Hoechst Celanese Corporation Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US4684597A (en) * 1985-10-25 1987-08-04 Eastman Kodak Company Non-precipitating quinone diazide polymer containing photoresist composition with o-quinone diazide trisester as dissolution inhibitor
US4737437A (en) * 1986-03-27 1988-04-12 East Shore Chemical Co. Light sensitive diazo compound, composition and method of making the composition
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US5162510A (en) * 1986-05-02 1992-11-10 Hoechst Celanese Corporation Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US5035976A (en) * 1986-05-02 1991-07-30 Hoechst Celanese Corporation Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents
US4902785A (en) * 1986-05-02 1990-02-20 Hoechst Celanese Corporation Phenolic photosensitizers containing quinone diazide and acidic halide substituents
JP2568827B2 (ja) * 1986-10-29 1997-01-08 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5182183A (en) * 1987-03-12 1993-01-26 Mitsubishi Kasei Corporation Positive photosensitive planographic printing plates containing specific high-molecular weight compound and photosensitive ester of O-napthoquinonediazidosulfonic acid with polyhydroxybenzophenone
JPS6449038A (en) * 1987-08-19 1989-02-23 Mitsubishi Chem Ind Positive type photoresist composition
US5248582A (en) * 1988-09-07 1993-09-28 Fuji Photo Film Co., Ltd. Positive-type photoresist composition
JPH0743534B2 (ja) * 1989-04-21 1995-05-15 東京応化工業株式会社 半導体デバイス用レジストパターンの製造方法
US5075194A (en) * 1990-01-09 1991-12-24 Industrial Technology Research Institute Positive photoresist composition containing 4,4-diester, 4,5-diester, or 5,5-diester of spiroglycol and 1-oxo-2-diazonaphthalene-5-sulfonic acid chloride
US5296330A (en) * 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
JP2944296B2 (ja) 1992-04-06 1999-08-30 富士写真フイルム株式会社 感光性平版印刷版の製造方法
US5384228A (en) * 1992-04-14 1995-01-24 Tokyo Ohka Kogyo Co., Ltd. Alkali-developable positive-working photosensitive resin composition
US5401605A (en) * 1992-08-12 1995-03-28 Tokyo Ohka Kogyo Co., Ltd. Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound
US5645970A (en) * 1995-10-25 1997-07-08 Industrial Technology Research Institute Weak base developable positive photoresist composition containing quinonediazide compound
US5853947A (en) * 1995-12-21 1998-12-29 Clariant Finance (Bvi) Limited Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
US7285422B1 (en) 1997-01-23 2007-10-23 Sequenom, Inc. Systems and methods for preparing and analyzing low volume analyte array elements
US6783914B1 (en) 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
US20050037293A1 (en) * 2000-05-08 2005-02-17 Deutsch Albert S. Ink jet imaging of a lithographic printing plate
JP4015946B2 (ja) 2000-10-30 2007-11-28 シークエノム・インコーポレーテツド 基板上にサブマイクロリットルの体積を供給する方法及び装置
US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
JP4001232B2 (ja) 2002-12-26 2007-10-31 Ｔｄｋ株式会社 マスク形成方法、パターン化薄膜形成方法およびマイクロデバイスの製造方法
US6852465B2 (en) * 2003-03-21 2005-02-08 Clariant International Ltd. Photoresist composition for imaging thick films
US7090958B2 (en) * 2003-04-11 2006-08-15 Ppg Industries Ohio, Inc. Positive photoresist compositions having enhanced processing time
WO2006039810A1 (en) * 2004-10-13 2006-04-20 St-Jean Photochimie Inc. Photoactive compositions and preparation thereof
US7749676B2 (en) 2004-12-09 2010-07-06 Kolon Industries, Inc. Positive type dry film photoresist and composition for preparing the same
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
US20090180931A1 (en) 2007-09-17 2009-07-16 Sequenom, Inc. Integrated robotic sample transfer device
US20130108956A1 (en) 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite positive photosensitive composition and use thereof
US11675266B2 (en) * 2021-04-15 2023-06-13 Industrial Technology Research Institute Photosensitive compound, photosensitive composition, and patterning method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE907739C (de) * 1949-07-23 1954-02-18 Kalle & Co Ag Verfahren zur Herstellung von Kopien, besonders Druckformen, mit Hilfe von Diazoverbindungen und dafuer verwendbares lichtempfindliches Material
BE506677A (zh) * 1950-10-31
NL185407B (nl) * 1953-03-11 Mitsui Petrochemical Ind Werkwijze voor het polymeriseren of copolymeriseren van 1-alkenen alsmede katalysatorsamenstelling voor toepassing van deze werkwijze.
NL129161C (zh) * 1959-01-14

Also Published As

Publication number Publication date
DE1422474B2 (de) 1979-04-19
DE1422474C3 (de) 1980-01-03
NL255348A (zh)
US3148983A (en) 1964-09-15
NL131386C (zh)
DE1422474A1 (de) 1972-04-06
CH383776A (de) 1964-10-31
GB942564A (en) 1963-11-27
BE594235A (zh)

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