SE301014B - - Google Patents

Info

Publication number
SE301014B
SE301014B SE254/65A SE25465A SE301014B SE 301014 B SE301014 B SE 301014B SE 254/65 A SE254/65 A SE 254/65A SE 25465 A SE25465 A SE 25465A SE 301014 B SE301014 B SE 301014B
Authority
SE
Sweden
Application number
SE254/65A
Inventor
W Heywang
E Sirtl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE301014B publication Critical patent/SE301014B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
SE254/65A 1964-01-10 1965-01-08 SE301014B (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES89017A DE1297085B (de) 1964-01-10 1964-01-10 Verfahren zum Abscheiden einer einkristallinen Halbleiterschicht

Publications (1)

Publication Number Publication Date
SE301014B true SE301014B (ko) 1968-05-20

Family

ID=7514822

Family Applications (1)

Application Number Title Priority Date Filing Date
SE254/65A SE301014B (ko) 1964-01-10 1965-01-08

Country Status (8)

Country Link
US (1) US3359143A (ko)
BE (1) BE658145A (ko)
CH (1) CH432473A (ko)
DE (1) DE1297085B (ko)
FR (1) FR1420169A (ko)
GB (1) GB1037146A (ko)
NL (1) NL6500206A (ko)
SE (1) SE301014B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
SE7710800L (sv) * 1976-10-05 1978-04-06 Western Electric Co Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat
US4341590A (en) * 1981-04-27 1982-07-27 Sperry Corporation Single surface LPE crystal growth
US4468850A (en) * 1982-03-29 1984-09-04 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268294A (ko) * 1960-10-10
NL296876A (ko) * 1962-08-23

Also Published As

Publication number Publication date
US3359143A (en) 1967-12-19
CH432473A (de) 1967-03-31
DE1297085B (de) 1969-06-12
NL6500206A (ko) 1965-07-12
GB1037146A (en) 1966-07-27
FR1420169A (fr) 1965-12-03
BE658145A (ko) 1965-07-12

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