SE300851B - - Google Patents
Info
- Publication number
- SE300851B SE300851B SE8895/62A SE889562A SE300851B SE 300851 B SE300851 B SE 300851B SE 8895/62 A SE8895/62 A SE 8895/62A SE 889562 A SE889562 A SE 889562A SE 300851 B SE300851 B SE 300851B
- Authority
- SE
- Sweden
- Prior art keywords
- layers
- layer
- superconductor
- evaporation
- insulator
- Prior art date
Links
- 238000001704 evaporation Methods 0.000 abstract 5
- 239000002887 superconductor Substances 0.000 abstract 5
- 230000008020 evaporation Effects 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000005388 borosilicate glass Substances 0.000 abstract 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical class [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 239000003973 paint Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/38—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of superconductive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F19/00—Amplifiers using superconductivity effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/873—Active solid-state device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US131892A US3155886A (en) | 1961-08-16 | 1961-08-16 | Solid state superconductor triode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE300851B true SE300851B (xx) | 1968-05-13 |
Family
ID=27445471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8895/62A SE300851B (xx) | 1961-08-16 | 1962-08-15 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3155886A (xx) |
| JP (1) | JPS3927278B1 (xx) |
| DE (1) | DE1265317B (xx) |
| FR (1) | FR1330621A (xx) |
| GB (1) | GB1004490A (xx) |
| NL (1) | NL282119A (xx) |
| SE (1) | SE300851B (xx) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3267389A (en) * | 1963-04-10 | 1966-08-16 | Burroughs Corp | Quantum mechanical tunnel injection amplifying apparatus |
| US3341362A (en) * | 1964-08-26 | 1967-09-12 | Melpar Inc | Thin film diode manufacture |
| US4157555A (en) * | 1977-11-07 | 1979-06-05 | The United States Of America As Represented By The United States Department Of Energy | Superconducting transistor |
| US4575741A (en) * | 1984-04-26 | 1986-03-11 | International Business Machines Corporation | Cryogenic transistor with a superconducting base and a semiconductor-isolated collector |
| US4630081A (en) * | 1984-12-19 | 1986-12-16 | Eaton Corporation | MOMOM tunnel emission transistor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3056889A (en) * | 1958-05-19 | 1962-10-02 | Thompson Ramo Wooldridge Inc | Heat-responsive superconductive devices |
| US3056073A (en) * | 1960-02-15 | 1962-09-25 | California Inst Res Found | Solid-state electron devices |
| US3116427A (en) * | 1960-07-05 | 1963-12-31 | Gen Electric | Electron tunnel emission device utilizing an insulator between two conductors eitheror both of which may be superconductive |
-
1961
- 1961-08-16 US US131892A patent/US3155886A/en not_active Expired - Lifetime
-
1962
- 1962-07-30 GB GB29249/62A patent/GB1004490A/en not_active Expired
- 1962-08-06 DE DER33285A patent/DE1265317B/de active Pending
- 1962-08-07 FR FR906333A patent/FR1330621A/fr not_active Expired
- 1962-08-15 NL NL282119D patent/NL282119A/xx unknown
- 1962-08-15 SE SE8895/62A patent/SE300851B/xx unknown
- 1962-08-16 JP JP3548162A patent/JPS3927278B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR1330621A (fr) | 1963-06-21 |
| US3155886A (en) | 1964-11-03 |
| NL282119A (xx) | 1964-12-28 |
| DE1265317B (de) | 1968-04-04 |
| GB1004490A (en) | 1965-09-15 |
| JPS3927278B1 (xx) | 1964-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6431475A (en) | Superconducting device and forming method thereof | |
| JPS5720486A (en) | Superconductive integrated circuit and preparation thereof | |
| KR900015364A (ko) | 터널형 조셉슨 소자와 그 제작방법 | |
| SE300851B (xx) | ||
| GB1333816A (en) | Superconductive tunnelling device | |
| JPS568871A (en) | Semiconductor memory device | |
| US3204115A (en) | Four-terminal solid state superconductive device with control current flowing transverse to controlled output current | |
| JPS6428876A (en) | Manufacture of superconducting 3-terminal element | |
| US3239731A (en) | Self-healing thin-film capacitor | |
| GB1287930A (xx) | ||
| GB1141644A (en) | Electrical switching and memory devices | |
| GB1243357A (en) | Superconductive tunnel junction device | |
| US4146309A (en) | Process for producing evaporated gold films | |
| JP2796099B2 (ja) | 超電導素子 | |
| GB996762A (en) | Solid state device | |
| GB1006831A (en) | Superconducting films | |
| US3204211A (en) | Superconductive device | |
| US3346829A (en) | Cryotron controlled storage cell | |
| JPS60250682A (ja) | 超電導素子 | |
| GB983879A (en) | Solid state devices | |
| JPS5469973A (en) | Weak coupling josephson device | |
| JPS6466980A (en) | Superconducting transistor | |
| KR910002026A (ko) | 초전도성 박막 성분을 제조하는 방법 | |
| GB932146A (en) | Improvements in or relating to insulating layers | |
| GB1173757A (en) | An Electrical Component |