SE2130122A1 - Method for using catalyst in growing semiconductors containing N and P atoms derived from NH3 and PH3 and device for the method. - Google Patents
Method for using catalyst in growing semiconductors containing N and P atoms derived from NH3 and PH3 and device for the method.Info
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- SE2130122A1 SE2130122A1 SE2130122A SE2130122A SE2130122A1 SE 2130122 A1 SE2130122 A1 SE 2130122A1 SE 2130122 A SE2130122 A SE 2130122A SE 2130122 A SE2130122 A SE 2130122A SE 2130122 A1 SE2130122 A1 SE 2130122A1
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- Prior art keywords
- catalyst
- injector
- ammonia
- gas
- rods
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- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000003054 catalyst Substances 0.000 title claims description 56
- 229910052757 nitrogen Inorganic materials 0.000 title description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 title description 4
- 125000004437 phosphorous atom Chemical group 0.000 title description 2
- 239000007789 gas Substances 0.000 claims abstract description 79
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 16
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000003863 metallic catalyst Substances 0.000 claims abstract description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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Abstract
SAMMANFATTNINGEtt halvledarmaterial av nitridtyp vid en gasfasepitaxiell process i en tillväxtkammare odlas på en wafer (1) på en susceptor varvid processgaser (2) flödas över waferm där en av processgaserna utgörs av ammoniak samt någon av fosfin (PH3) eller arsin (AsH3), där ammoniakgasen tvingas strömma genom en metallisk katalysator (4, 7) innan den når fram till wafern (1).(Fig. 1)SUMMARY A nitride type semiconductor material in a gas phase epitaxial process in a growth chamber is grown on a wafer (1) on a susceptor whereby process gases (2) flow over the wafer where one of the process gases consists of ammonia and one of phosphine (PH3) or arsine (AsH3), where the ammonia gas is forced to flow through a metallic catalyst (4, 7) before it reaches the wafer (1). (Fig. 1)
Description
Förfarande för användning av katalysator vid odling av halvledare innehållande N- och P-atomer komna från NH3 och PH3 och anordning för förfarandet. Method for using catalyst in growing semiconductors containing N and P atoms derived from NH3 and PH3 and device for the method.
TEKNISKT OMRÅDE id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" TECHNICAL AREA id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1 " id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1" id="p-1"
[0001] Den föreliggande uppfinningen hänför sig till ett förfarande vid användning av ammoniak (NH3) eller fosfin (PH3) för odling av halvledare av till exempel nitridtyp där en katalysator används för att snabbare driva gaserna, ammoniaken eller fosfinet, närmare terrniska jämvikten och göra dem mer reaktiva och att därigenom kunna öka tillväxt- hastigheten hos ett odlat epitaktiskt skikt av en nitridhalvledare samt att minska åtgång av ammoniak eller fosfin vid en gasfasepitaxi. [0001] The present invention relates to a method using ammonia (NH3) or phosphine (PH3) for growing semiconductors of, for example, nitride type where a catalyst is used to drive the gases, the ammonia or the phosphine, closer to the ternary equilibrium and make them more reactive and thereby being able to increase the growth rate of a grown epitaxial layer of a nitride semiconductor and to reduce the consumption of ammonia or phosphine in a gas phase epitaxy.
TEKNIKENS STÃNDPUNKT id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" STATE OF THE ART id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2 " id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2"
[0002] Vid tillverkning av exempelvis ett halvledarrnaterial som har kväve eller fosfor som en beståndsdel, exempelvis olika nitrider (GaN, GaPN, AlPN), genom gasfasepitaxi så används ammoniak (NH3) som källa för kväve. Vid en process som används vid sådan till- verkning sönderdelas ammoniak i sina beståndsdelar varvid väteatomer frigörs från kväve- atomen i en ammoniakmolekyl. Problemet är att en hel del ammoniak måste användas vid processen. Det är bara några procent av tillförd ammoniak som faktiskt deltar i den gasfasepitaxiella processen. Större delen av ammoniaken, dvs. de ammoniakmolekyler som tillförs processen går rakt igenom processen utan att reagera med andra ämnen eller att sönderdelas. Detta leder till höga kostnader för förbrukning med hög åtgång av ammoniak i processen enligt känd teknik. Vidare uppkommer kostnader för omhändertagande av i processen oanvänd ammoniak vid ett utlopp hos den utrustning som används i processen. id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" [0002] When manufacturing, for example, a semiconductor material that has nitrogen or phosphorus as a component, for example various nitrides (GaN, GaPN, AlPN), by gas phase epitaxy, ammonia (NH3) is used as a source of nitrogen. In a process used in such production, ammonia is broken down into its components, whereby hydrogen atoms are released from the nitrogen atom in an ammonia molecule. The problem is that a lot of ammonia must be used in the process. Only a few percent of added ammonia actually participates in the gas-phase epitaxial process. Most of the ammonia, i.e. the ammonia molecules added to the process go straight through the process without reacting with other substances or being decomposed. This leads to high costs for consumption with a high consumption of ammonia in the process according to known technology. Furthermore, costs arise for the disposal of ammonia not used in the process at an outlet of the equipment used in the process. id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id ="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id= "p-3" id="p-3" id="p-3"
[0003] Processen vid tillverkning av nitridhalvledare är typiskt en batchprocess , vilket innebär att en eller flera Wafers laddas i en tillväxtkammare. Denna tillväxtkammare värms upp till drygt l000 °C vid reducerat tryck. Processgaser strömmas därefter över ytan på en Wafer för att åstadkomma tillväxt av ett epitaktiskt skikt av det önskade materialet, i detta fall en nitridhalvledare, såsom AlGaN, lnAlGaN , lnAlGaPN och InGaN. id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" [0003] The process in the manufacture of nitride semiconductors is typically a batch process, which means that one or more wafers are loaded into a growth chamber. This growth chamber is heated to just over 1,000 °C at reduced pressure. Process gases are then flowed over the surface of a wafer to effect growth of an epitaxial layer of the desired material, in this case a nitride semiconductor, such as AlGaN, lnAlGaN, lnAlGaPN and InGaN. id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id ="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id= "p-4" id="p-4" id="p-4"
[0004] Användning av katalysator vid tillverkning av halvledare finns beskriven i dokumentet: CATALYST ROLE IN CHEMICAL VAPOR DEPOSITION (CVD) PROCESS: A REVIEW by H.U. Rashid, K. Yu, M.N. Umar, M.N. Anjum, K. Khan, N. Ahmad and M.T. Jan; Journal: Rev. Adv, Mater. Sci. 40, pages 235 - 248, Year 20l5. I nämnda skrift påtalas användning av katalysatorer vid låga temperaturer. Inget sägs om undersökningar kring möjlighet att använda katalysatorer vid framställning av Wide Band Gap halvledare i HTCVD processer där temperaturen under odling uppgår till 800 grader Celsius eller högre. Icke heller förekommer något omnämnande av möjlighet eller behov av att använda katalysator för att minska åtgång av ammoniak vid odling av nitridhalv- ledare. "Rashid" beskriver bland annat hur en katalysator används för att kunna sänka temperaturen i processkammaren när det producerade materialet är temperaturkänsligt, dvs. långt från de förhållanden som gäller vid HTCVD-processer. id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" [0004] Use of catalyst in the manufacture of semiconductors is described in the document: CATALYST ROLE IN CHEMICAL VAPOR DEPOSITION (CVD) PROCESS: A REVIEW by H.U. Rashid, K. Yu, M.N. Umar, M.N. Anjum, K. Khan, N. Ahmad and M.T. January; Journal: Rev. Adv, Mater. Sci. 40, pages 235 - 248, Year 2015. In said document, the use of catalysts at low temperatures is mentioned. Nothing is said about investigations into the possibility of using catalysts in the production of Wide Band Gap semiconductors in HTCVD processes where the temperature during cultivation reaches 800 degrees Celsius or higher. Nor is there any mention of the possibility or need to use a catalyst to reduce the consumption of ammonia when growing nitride semiconductors. "Rashid" describes, among other things, how a catalyst is used to be able to lower the temperature in the process chamber when the produced material is temperature sensitive, i.e. far from the conditions that apply in HTCVD processes. id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id ="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id= "p-5" id="p-5" id="p-5"
[0005] Känd teknik redovisas även i exempelvis skriften CNl07740l89. I denna skrift omnämns inte någon användning av katalysator för att minska åtgången av ammoniak vid odling av en nitridhalvledare. [0005] Known technology is also reported in, for example, the document CN107740189. This document does not mention any use of catalyst to reduce the consumption of ammonia when growing a nitride semiconductor.
BESKRIVNING AV UPPFINNINGEN id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" DESCRIPTION OF THE INVENTION id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p- 6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6 " id="p-6" id="p-6" id="p-6"
[0006] Epitaktiska skikt av halvledarnitrider såsom GalliumNitrid (GaN) och Alun1iniumNitrid (AlN) framställs genom odling vid förhöjd temperatur i en tillväxt- kammare inrättad i ett reaktorhölje medelst en process som inom tekniken betecknas med HTCVD (High Temperature Chemical Vapor Deposition). Det epitaktiska skiktet odlas på en Wafer som vanligen anordnas på en roterande susceptor i tillväxtkammaren. Process- gaser för odlingen är anordnade att strömma över Wafem. Vid odling av halvledarnitrider används ammoniak i gasform som en av processgaserna för att tillhandahålla de nödvändiga kväveatomerna till uppbyggnad av halvledaren. Temperaturen i HTCVD- reaktorn uppgår till över 800 °C, men temperaturer ned mot 600 °C kan förekomma. id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" [0006] Epitaxial layers of semiconductor nitrides such as Gallium Nitride (GaN) and Aluminum Nitride (AlN) are produced by growing at an elevated temperature in a growth chamber set up in a reactor casing by means of a process known in the art as HTCVD (High Temperature Chemical Vapor Deposition). The epitaxial layer is grown on a wafer which is usually arranged on a rotating susceptor in the growth chamber. Process gases for the cultivation are arranged to flow over Wafem. When growing semiconductor nitrides, gaseous ammonia is used as one of the process gases to provide the necessary nitrogen atoms to build up the semiconductor. The temperature in the HTCVD reactor amounts to over 800 °C, but temperatures down to 600 °C can occur. id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id ="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id= "p-7" id="p-7" id="p-7"
[0007] Många s.k. MO-CVD reaktorer har höga temperaturgradienter i gasfasen. Till exempel är temperaturen hos inkommande gas till en tillväxtkammare + 25 °C och på en kort sträcka med en hög gasflödeshastighet hinner inte jämvikt infinna sig i den kemiska balansen p. g.a. att gasens kinetik har ett långsammare förlopp. Ett sätt att öka hastigheten i gasens väg mot en kinetisk jämvikt som funktion av temperaturen i området för de inkommande gasema är att använda en katalysator. Ytterligare ett önskvärt resultat är att hastigheten för den epitaxiella tillväxtprocessen kan ökas och att därvid mindre mängder ursprungsgas behövs och på det sättet kan förbrukningen av andra aktiva gaser (exempelvis TMGa) minskas och på så sätt minskas kostnaderna per epitaxiskikt. id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" [0007] Many so-called MO-CVD reactors have high temperature gradients in the gas phase. For example, the temperature of incoming gas to a growth chamber is + 25 °C and in a short distance with a high gas flow rate equilibrium does not have time to occur in the chemical balance due to that the kinetics of the gas has a slower course. One way to increase the speed of the gas's path towards a kinetic equilibrium as a function of the temperature in the area of the incoming gases is to use a catalyst. Another desirable result is that the speed of the epitaxial growth process can be increased and that in doing so smaller amounts of source gas are needed and in this way the consumption of other active gases (eg TMGa) can be reduced and thus the costs per epitaxial layer are reduced. id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id ="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id= "p-8" id="p-8" id="p-8"
[0008] Enligt en aspekt av uppfinningen utgörs denna av ett förfarande vid odling av halvledarrnaterial av nitridtyp vid en gasfasepitaxiell process i en tillväxtkammare dar en halvledare odlas på en Wafer på en susceptor varvid processgaser flödas över Wafern dar en av processgasema utgörs av ammoniak och dar ammoniakgasen tvingas strömma genom en metallisk katalysator innan den når fram till Wafern. id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" [0008] According to one aspect of the invention, this consists of a method for growing nitride-type semiconductor material in a gas-phase epitaxial process in a growth chamber where a semiconductor is grown on a wafer on a susceptor whereby process gases are flowed over the wafer where one of the process gases consists of ammonia and where the ammonia gas is forced to flow through a metallic catalyst before reaching the wafer. id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id ="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id= "p-9" id="p-9" id="p-9"
[0009] Avsikten med uppfinningen är utnyttja en katalysator som sönderdelar och gör ammoniaken mer reaktiv, varvid ett större utnyttjande av ammoniaken uppnås. Detta leder till att mindre mängd ammoniak behöver tillföras processen, men också att tillväxt- hastigheten av det epitaktiska skiktet ökar med bibehållen kvalite på detta odlade skikt. id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" [0009] The intention of the invention is to use a catalyst that decomposes and makes the ammonia more reactive, whereby a greater utilization of the ammonia is achieved. This leads to a smaller amount of ammonia needing to be added to the process, but also to the growth rate of the epitaxial layer increasing while maintaining the quality of this grown layer. id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id ="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id= "p-10" id="p-10" id="p-10"
[0010] Vid odling av exempelvis GaN och AlN enligt kand teknik förvärrns de olika processgaserna inklusive ammoniakgasen som tillförs processen var för sig för att dessa inte ska reagera med varandra på ett ofördelaktigt satt. Detta innebar dock att gasema, relativt nära Wafern som ska beläggas med ett epitaktiskt skick, till viss del fortfarande är åtskilda, dvs. ammoniakgasen och exempelvis processgas för att odla GaN resp AlN. Det är fördelaktigt om gaserna kan blandas. Beroende på geometrin hos en reaktor som inne- sluter tillväxtkammaren är det ibland en fördel att placera katalysatorn på sådant satt att den dels katalyserar ammoniaken, men också bidrar till att gaserna blandas mer effektivt, dvs. att ammoniakgasen och övrig processgas blandas effektivt nära Wafern, dvs. vid inj ektorns utlopp. id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" [0010] When growing, for example, GaN and AlN according to kand technology, the various process gases, including the ammonia gas that is added to the process, are worsened individually so that they do not react with each other in an unfavorable manner. However, this meant that the gases, relatively close to the Wafer to be coated with an epitaxial condition, are to some extent still separated, i.e. ammonia gas and, for example, process gas to grow GaN or AlN. It is advantageous if the gases can be mixed. Depending on the geometry of a reactor that includes the growth chamber, it is sometimes an advantage to place the catalyst in such a way that it partly catalyzes the ammonia, but also contributes to the gases being mixed more effectively, i.e. that the ammonia gas and other process gas are effectively mixed near the wafer, i.e. at the injector outlet. id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id ="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id= "p-11" id="p-11" id="p-11"
[0011] Metoden kan också användas för gasfasepitaxi för andra halvledarrnaterial av nitridtyp där ammoniak används som en beståndsdel i processen, exempelvis vid odling av halvledare som AlGaPN och InAlGaPN. id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" [0011] The method can also be used for gas phase epitaxy for other nitride-type semiconductor materials where ammonia is used as a component in the process, for example when growing semiconductors such as AlGaPN and InAlGaPN. id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id ="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id= "p-12" id="p-12" id="p-12"
[0012] Den katalysator som används vid metoden enligt uppfinningen kommer med tiden att beläggas med olika depositioner vilket medför att processens effektivitet avtar. Katalysatorn kan dock regenereras med hjälp av en etsande gas som etsar bort sådana uppkomna depositioner. Ett annat sätt att avlägsna depositioner är att värma dessa till en hög temperatur. Sådana regenereringar utförs lämpligen mellan två batchkörningar vid sådan nämnd odling av epitaktiska skikt av nitridhalvledare. id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" [0012] The catalyst used in the method according to the invention will over time be coated with various deposits, which means that the efficiency of the process decreases. However, the catalyst can be regenerated with the help of an corrosive gas that etches away such formed deposits. Another way to remove deposits is to heat them to a high temperature. Such regenerations are suitably carried out between two batch runs in such mentioned growing of epitaxial layers of nitride semiconductors. id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id ="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id= "p-13" id="p-13" id="p-13"
[0013] Om reaktorn som nyttjas är utformad så att de ingående gaserna blandas effektivt på ett annat satt än med hjälp av katalysatom är det fördelaktigt att placera katalysatorn i den del av gasinloppet till tillväXtkammaren dar gasema fortfarande hålls åtskilda. På detta satt förhindras att katalysatom beläggs med åtföljande minskning av effektiviteten hos katalysatorn i odlingsprocessen. id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" [0013] If the reactor used is designed so that the constituent gases are mixed effectively in a different way than with the help of the catalyst, it is advantageous to place the catalyst in the part of the gas inlet to the growth chamber where the gases are still kept separate. In this way, the catalyst is prevented from being coated with the consequent reduction in the efficiency of the catalyst in the cultivation process. id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id ="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id= "p-14" id="p-14" id="p-14"
[0014] Katalysatorn kan utformas geometriskt enligt olika altemativ. Enligt ett första altemativ dar katalysatorn av avsedd att medverka till att processgaserna blandas mer effektivt ska katalysatorns element utformas så att de skapar lokal turbulens hos dessa. För att åstadkomma detta placeras en platta av grafit eller annat lämpligt material som inte reagerar med någon av processgasema inuti injektorn utefter botten hos denna. I plattan inrättas ett antal stavar av katalysatormaterialet i processgasernas flödesväg, där dessa stavar sträcker sig från plattan i botten av injektorn upp till taket av injektom. id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" [0014] The catalyst can be designed geometrically according to different alternatives. According to a first alternative, if the catalyst is intended to contribute to the mixing of the process gases more efficiently, the elements of the catalyst must be designed so that they create local turbulence in them. To accomplish this, a plate of graphite or other suitable material that does not react with any of the process gases is placed inside the injector along the bottom thereof. In the plate, a number of rods of the catalyst material are set up in the flow path of the process gases, where these rods extend from the plate at the bottom of the injector up to the roof of the injector. id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id ="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id= "p-15" id="p-15" id="p-15"
[0015] Stavama är då fördelade över hela injektorns bredd och är uppdelade på en eller flera rader. Genom att dela upp dem i flera rader erhålls ett större utrymme mellan stavama och gasen kan passera igenom enklare. Placeringen av stavarna görs så att gasen påverkas i önskad omfattning, något som är beroende av reaktoms övriga geometri. När stavama placeras i flera rader kommer de att ha olika temperatur. Då det är en viss temperatur som är optimal är det fördelaktigt att hålla samman grupperingen och låta avståndet mellan två rader vara ungefär lika med l - 2 gånger stavarnas diametrar. id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" [0015] The rods are then distributed over the entire width of the injector and are divided into one or more rows. By dividing them into several rows, a larger space is obtained between the rods and the gas can pass through more easily. The placement of the rods is done so that the gas is affected to the desired extent, which is dependent on the other geometry of the reactor. When the rods are placed in several rows, they will have different temperatures. Since it is a certain temperature that is optimal, it is advantageous to keep the grouping together and let the distance between two rows be approximately equal to l - 2 times the diameters of the rods. id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id ="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id= "p-16" id="p-16" id="p-16"
[0016] Stavama är utförda i ett material som verkar som katalysator vid den process som nämnts. Katalysatorn utgörs härvid av exempelvis palladium eller platina. Materialet måste dessutom väljas så att det inte påverkas av de gaser man avser att använda för rengöring av Wafern, av katalysatom eller av tillväXtkammarens väggar och tak. [0016] The staves are made of a material that acts as a catalyst in the process mentioned. The catalyst here consists of, for example, palladium or platinum. The material must also be chosen so that it is not affected by the gases you intend to use for cleaning the wafer, the catalyst or the walls and ceiling of the growth chamber.
FIGURBESKRIVNING Figur l visar schematiskt en principskiss över gasflödet i en reaktor vid odling. FIGURE DESCRIPTION Figure 1 schematically shows a principle sketch of the gas flow in a reactor during cultivation.
Figur 2 illustrerar temperaturförändringen i ett diagram som visar gasens uppvärmning som funktion av dess position på vägen mot en Wafer i reaktom. Figure 2 illustrates the temperature change in a diagram showing the heating of the gas as a function of its position en route to a Wafer in the reactor.
Figur 3 visar på gasens temperaturförändring på samma sätt som i figur 2 där injektor och Wafer visas från ovan. Figure 3 shows the temperature change of the gas in the same way as in Figure 2 where the injector and Wafer are shown from above.
Figur 4 återger ett alternativt utförande för gasflödet med åtskilda gaser där gasens temperaturförändring illustreras som i figurerna 2 och Figur 5 visar en katalysator designad som en vaXkaka där gas kan flöda längs kanalerna som ligger an mot varandra enligt tvärsnittet som visas i vaXkakemönstret. Figure 4 represents an alternative embodiment for the gas flow with separated gases where the temperature change of the gas is illustrated as in figures 2 and Figure 5 shows a catalyst designed as a wax cake where gas can flow along the channels that abut each other according to the cross section shown in the wax pattern.
Figur 6 anger ett utförande för montering av katalysatorer där stavar av katalysatormaterial är uppradade på en platta som placeras inne i injektorn (endast en bråkdel av förekommande stavar visas på plattan i figuren). Figure 6 shows an embodiment for mounting catalysts where rods of catalyst material are lined up on a plate placed inside the injector (only a fraction of the rods present are shown on the plate in the figure).
Figur 7 visar utförandet enligt figur 6 i en vy från sidan, dar stavarna är ordnade i rader. Figur 8 visar raderna av stavar enligt figur 7, där det framgår att stavarna av katalysatormaterial är ordnade så tatt att strömmen av ammoniakgas inte kan passera opåverkat förbi (endast en bråkdel av förekommande stavar visas på plattan i figuren). Figure 7 shows the design according to Figure 6 in a side view, where the rods are arranged in rows. Figure 8 shows the rows of rods according to Figure 7, where it can be seen that the rods of catalyst material are arranged in such a way that the stream of ammonia gas cannot pass by unaffected (only a fraction of the rods present are shown on the plate in the figure).
BESKRIVNING Av UTFöRANDEN [0017] I det följ ande beskrivs ett antal utföranden av uppfinningen med stöd av de bilagda ritningarna. Ritningarna visar endast schematiskt principen för anordningen och gör ej anspråk på att skalenligt visa några proportioner mellan olika element av denna. id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" DESCRIPTION OF EMBODIMENTS [0017] In the following, a number of embodiments of the invention are described with the support of the attached drawings. The drawings only schematically show the principle of the device and do not claim to show to scale any proportions between different elements thereof. id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id ="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id= "p-18" id="p-18" id="p-18"
[0018] Här redovisas ett utförande av en anordning enligt uppfinningen. I figur l visas ett exempel på principen för odling av ett epitaXiellt skikt på en Wafer l i en reaktor av HTCVD-typ (reaktorn i sin helhet visas ej). Har inkommer processgas 2 från vänster i figuren. Processgasen 2 flödar därefter in genom en injektor som representeras med 3. I injektorn värrns gasema upp till processtemperaturen för odling och gasflödet formas. När processgaserna strömmar ut från injektom flödar de därefter över ytan på Wafern l, dar det epitaxiella skiktet byggs genom kristallisation av atomer i de processgaser som används i PIOCCSSCII. id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" [0018] An embodiment of a device according to the invention is presented here. Figure 1 shows an example of the principle of growing an epitaxial layer on a Wafer 1 in a reactor of the HTCVD type (the reactor as a whole is not shown). Has incoming process gas 2 from the left in the figure. The process gas 2 then flows in through an injector represented by 3. In the injector, the gases are heated up to the process temperature for cultivation and the gas flow is shaped. When the process gases flow out of the injector, they then flow over the surface of Wafer 1, where the epitaxial layer is built by crystallization of atoms in the process gases used in PIOCCSSCII. id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id ="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id= "p-19" id="p-19" id="p-19"
[0019] Ett utförande enligt ett första altemativ av uppfinningsaspekten visas i figur 2. Där återges samma uppsättning av komponenter som i figur l. Här visas att en katalysator 4 enligt uppfinningen är installerad inuti injektom 3. I figuren är även visat hur temperaturen hos processgaserna ändras när de strömmar fram genom injektorn mot Wafem. Temperaturen T anges utefter den lodräta axeln i diagrammet, medan gasens position utefter anordningen anges med X. Temperaturen hos gaserna vid olika positioner längs vägen till Wafern visas i kurvan i diagrammet. Temperaturen hos gasblandningen stiger under dess passage genom injektom, men när gasblandningen lämnar injektorn så har den nått processtemperaturen vilket åskådliggörs medelst den streckade linjen i diagrammen i figurerna 2 och 3. Katalysatom placeras där temperaturen är tillräcklig hög för att katalysatorn ska kunna sönderdela gasen.Placeringen är beroende av geometrin hos inj ektorn men det finns alltid en position där temperaturen är tillräckligt hög. id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" [0019] An embodiment according to a first alternative aspect of the invention is shown in figure 2. The same set of components as in figure 1 is shown there. Here it is shown that a catalyst 4 according to the invention is installed inside the injector 3. The figure also shows how the temperature of the process gases change as they flow through the injector towards the Wafem. The temperature T is indicated along the vertical axis in the diagram, while the position of the gas along the device is indicated by X. The temperature of the gases at different positions along the path to the Wafer is shown in the curve in the diagram. The temperature of the gas mixture rises during its passage through the injector, but when the gas mixture leaves the injector it has reached the process temperature, which is illustrated by the dashed line in the diagrams in figures 2 and 3. The catalyst is placed where the temperature is high enough for the catalyst to decompose the gas. The location is dependent on the geometry of the injector but there is always a position where the temperature is high enough. id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id ="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id= "p-20" id="p-20" id="p-20"
[0020] Figur 3 återger förhållandet som råder hos processen i reaktorn, där i detta fall gasflödet visas från injektoms 3 och Waferns l ovansida. id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" [0020] Figure 3 reproduces the situation that prevails in the process in the reactor, where in this case the gas flow is shown from the injectome 3 and the upper side of Wafer 1. id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id ="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id= "p-21" id="p-21" id="p-21"
[0021] Enligt ett andra alternativ av uppfinningsaspekten utformas gasflödet enligt figur 4. Här slussas processgaserna genom injektom 3 i åtskilda kanaler 5, 6, där ammoniakgas 2a strömmas genom den ena av kanalema 5, i vilken katalysatorn, betecknad med 7 i detta fall, är förlagd. Övriga processgaser 2b slussas fram till Wafern l via en andra kanal 6 i inj ektorn 3. Katalysatorn 7 kan här vara utformad som en vaXkaka enligt figur 5 för att som nämnts åstadkomma en större yta av katalysatorn som gasen kan reagera mot. När katalysatorn utgörs av en vaXkaka är då kanaler med seXkantigt tvärsnitt anliggande mot varandra och förlagda i gasflödets riktning. id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" [0021] According to a second alternative aspect of the invention, the gas flow is designed according to Figure 4. Here, the process gases are sluiced through injector 3 in separate channels 5, 6, where ammonia gas 2a flows through one of the channels 5, in which the catalyst, denoted by 7 in this case, is misplaced. Other process gases 2b are sluiced to the Wafer 1 via a second channel 6 in the injector 3. The catalyst 7 can here be designed as a wax cake according to Figure 5 in order, as mentioned, to create a larger surface area of the catalyst against which the gas can react. When the catalyst consists of a wax cake, channels with a hexagonal cross-section are adjacent to each other and arranged in the direction of the gas flow. id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id ="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id= "p-22" id="p-22" id="p-22"
[0022] Beroende på den geometriska designen i övrigt utformas katalysatorn på olika sätt. Om katalysatorn 3, 7 ska medverka till att de ingående gaserna blandas mer effektivt ska de utformas så att de skapar lokal turbulens. Detta görs i ett utföringsexempel genom utformning av katalysatom enligt figur 5. En platta 8 av grafit, eller annat material som inte reagerar med de i processgaserna använda gaserna, placeras inuti injektorn 3 på dennas botten. Iplattan 8 finns ett antal stavar 9 monterade, där dessa stavar har en höjd så att de sträcker sig från plattan 8 upp till injektorns tak l0 (se fig. 2). Tvärs gasens flödesriktning är ett fält ll med hål för stavarna i plattan visade. Endast några stavar 9 av de som placeras i fältet ll är visade monterade i figuren. id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" [0022] Depending on the geometrical design in general, the catalyst is designed in different ways. If the catalyst 3, 7 is to contribute to the mixing of the constituent gases more effectively, they must be designed so that they create local turbulence. This is done in an exemplary embodiment by designing the catalyst according to figure 5. A plate 8 of graphite, or other material that does not react with the gases used in the process gases, is placed inside the injector 3 on its bottom. In the plate 8 there are a number of rods 9 mounted, where these rods have a height such that they extend from the plate 8 up to the roof of the injector l0 (see fig. 2). Across the flow direction of the gas is a field ll with holes for the rods in the plate shown. Only some rods 9 of those placed in field 11 are shown assembled in the figure. id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id ="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id= "p-23" id="p-23" id="p-23"
[0023] Stavama 9 är fördelade över hela injektorns 3 bredd och är uppdelade på en eller flera rader. Genom att dela upp stavarna i flera rader erhålls ett större utrymme mellan stavarna och den gas som aktivt ska påverkas av katalysatorn kan passera igenom gruppe- ringen av stavar enklare. Placeringen av stavama görs så att gasen påverkas i önskad om- fattning, något som är beroende av reaktoms övriga geometri. När stavarna placeras i flera rader kommer de att ha olika temperatur. Då det är en viss temperatur som är optimal för att sönderdela ammoniaken (optimerad för tillväxthastigheten) är det fördelaktigt att hålla samman grupperingen av stavarna 9 och låta avståndet i flödesriktningen mellan två rader av stavar vara ungefär lika med l - 2 av stavarnas diameter. id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" [0023] The rods 9 are distributed over the entire width of the injector 3 and are divided into one or more rows. By dividing the rods into several rows, a larger space is obtained between the rods and the gas that is to be actively affected by the catalyst can pass through the grouping of rods more easily. The placement of the rods is done so that the gas is affected to the desired extent, which is dependent on the other geometry of the reactor. When the rods are placed in several rows, they will have different temperatures. Since there is a certain temperature that is optimal for decomposing the ammonia (optimized for the growth rate), it is advantageous to keep the grouping of the rods 9 together and let the distance in the flow direction between two rows of rods be approximately equal to l - 2 of the diameter of the rods. id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id ="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id= "p-24" id="p-24" id="p-24"
[0024] Rader i en gruppering av katalysatorstavar 9 är visade på plattan 8 i en vy från sidan i figur id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" [0024] Rows in a grouping of catalyst rods 9 are shown on plate 8 in a side view in Figure id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id ="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25"
[0025] Stavama 9 är utförda i ett material som verkar som katalysator för den gas som används vid odling av nitridhalvledare enligt uppfinningsaspekten, exempelvis palladium eller platina. Materialet hos katalysatom måste dessutom välj as så att det inte påverkas av de gaser man avser att använda för rengöring av katalysatom, av Wafern eller av tillväxtkammarens väggar och tak. id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" [0025] The rods 9 are made of a material that acts as a catalyst for the gas used in growing nitride semiconductors according to the aspect of the invention, for example palladium or platinum. The material of the catalyst must also be chosen so that it is not affected by the gases intended to be used for cleaning the catalyst, the wafer or the walls and roof of the growth chamber. id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id ="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id= "p-26" id="p-26" id="p-26"
[0026] I figur 8 visas en vy av katalysatoms stavar 9 i en gruppering på plattan 8 sedda i gasernas flödesriktning från uppströmssidan. Här framkommer att stavarna 9 är placerade så tätt att gasströmmen inte kan passera genom katalysatorn opåverkade någonstans. Detta åstadkoms genom att stavarna 9 i varje respektive rad av katalysatorstavar i grupperingen är förskjutna i förhållande till varandra i sidled så att inga längsgående fria vägar för gasen uppträder. I figuren är endast en del stavar 9 av hela bredden på plattan 8 visade för att motsvara de stavar som är visade i figurerna 6, 7 och 8.[0026] Figure 8 shows a view of the catalyst rods 9 in a grouping on the plate 8 seen in the flow direction of the gases from the upstream side. Here it appears that the rods 9 are placed so closely that the gas stream cannot pass through the catalyst anywhere unaffected. This is achieved by the rods 9 in each respective row of catalyst rods in the grouping being offset in relation to each other laterally so that no longitudinal free paths for the gas occur. In the figure, only some rods 9 of the entire width of the plate 8 are shown to correspond to the rods shown in Figures 6, 7 and 8.
Claims (10)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE2130122A SE545225C2 (en) | 2021-05-05 | 2021-05-05 | Method for using catalyst in growing semiconductors containing N and P atoms derived from NH3 and PH3 and device for the method. |
| EP22799207.0A EP4334492A1 (en) | 2021-05-05 | 2022-05-05 | A method for using catalyst in growth of semiconductors comprising n-and p- atoms and device for the method |
| PCT/SE2022/050438 WO2022235194A1 (en) | 2021-05-05 | 2022-05-05 | A method for using catalyst in growth of semiconductors comprising n-and p- atoms and device for the method |
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| SE2130122A SE545225C2 (en) | 2021-05-05 | 2021-05-05 | Method for using catalyst in growing semiconductors containing N and P atoms derived from NH3 and PH3 and device for the method. |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160233085A1 (en) * | 2013-09-27 | 2016-08-11 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium |
| US20160348239A1 (en) * | 2015-06-01 | 2016-12-01 | Philtech, Inc. | Heat Beam Film-Forming Apparatus |
| US20170335454A1 (en) * | 2016-05-17 | 2017-11-23 | Philtech Inc. | Film-forming method |
| US20180223431A1 (en) * | 2015-11-30 | 2018-08-09 | Philtech, Inc. | Film-forming method |
-
2021
- 2021-05-05 SE SE2130122A patent/SE545225C2/en unknown
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2022
- 2022-05-05 WO PCT/SE2022/050438 patent/WO2022235194A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160233085A1 (en) * | 2013-09-27 | 2016-08-11 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium |
| US20160348239A1 (en) * | 2015-06-01 | 2016-12-01 | Philtech, Inc. | Heat Beam Film-Forming Apparatus |
| US20180223431A1 (en) * | 2015-11-30 | 2018-08-09 | Philtech, Inc. | Film-forming method |
| US20170335454A1 (en) * | 2016-05-17 | 2017-11-23 | Philtech Inc. | Film-forming method |
Non-Patent Citations (1)
| Title |
|---|
| Linde Electronics brochure - Leading in electronic gases, Supplying the semiconductor, solar display, and LED markets; 2019-07-17 daterad med Wayback Machine [åtkomst på Internet 2022-01-04], https://web.archive.org/web/20190717040915/http://www.linde-gas.com/en/images/Linde%20Electronics%20brochure_tcm17-279892.pdf * |
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| WO2022235194A1 (en) | 2022-11-10 |
| EP4334492A1 (en) | 2024-03-13 |
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