SE0201158D0 - Low leakage charge pump - Google Patents

Low leakage charge pump

Info

Publication number
SE0201158D0
SE0201158D0 SE0201158A SE0201158A SE0201158D0 SE 0201158 D0 SE0201158 D0 SE 0201158D0 SE 0201158 A SE0201158 A SE 0201158A SE 0201158 A SE0201158 A SE 0201158A SE 0201158 D0 SE0201158 D0 SE 0201158D0
Authority
SE
Sweden
Prior art keywords
charge pump
node
measuring device
leakage current
input
Prior art date
Application number
SE0201158A
Other languages
Swedish (sv)
Other versions
SE522959C2 (en
SE0201158L (en
Inventor
Fredrik Jonsson
Original Assignee
Spirea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spirea Ab filed Critical Spirea Ab
Priority to SE0201158A priority Critical patent/SE522959C2/en
Publication of SE0201158D0 publication Critical patent/SE0201158D0/en
Priority to AU2003224527A priority patent/AU2003224527A1/en
Priority to PCT/SE2003/000574 priority patent/WO2003088494A1/en
Publication of SE0201158L publication Critical patent/SE0201158L/en
Publication of SE522959C2 publication Critical patent/SE522959C2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C3/00—Angle modulation
    • H03C3/02—Details
    • H03C3/09—Modifications of modulator for regulating the mean frequency
    • H03C3/0908—Modifications of modulator for regulating the mean frequency using a phase locked loop
    • H03C3/0958—Modifications of modulator for regulating the mean frequency using a phase locked loop applying frequency modulation by varying the characteristics of the voltage controlled oscillator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
    • H03L7/089—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
    • H03L7/0891—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses the up-down pulses controlling source and sink current generators, e.g. a charge pump
    • H03L7/0895—Details of the current generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
    • H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop

Landscapes

  • Control Of Positive-Displacement Pumps (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)

Abstract

This invention relates to a circuitry connectable to a charge pump for reducing leakage current associated with said charge pump. The invention is based on the idea that the voltage in the node from which a charge pump load is charged or discharged is measured. The measuring device measures the potential of the node. When the charge pump is disconnected from the load, the measuring device drives its output to the same potential as its input. By employing this technique, a leakage current that in the prior art structure is driven via the node into the first switch because of a voltage drop on the switch input is reduced. The measuring device will force its output to the same potential as its input, and the corresponding leakage current is now produced and driven by the measuring device output instead. Thus, no leakage current is driven via the node.
SE0201158A 2002-04-16 2002-04-16 Low leakage type pump SE522959C2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE0201158A SE522959C2 (en) 2002-04-16 2002-04-16 Low leakage type pump
AU2003224527A AU2003224527A1 (en) 2002-04-16 2003-04-09 Low leakage charge pump
PCT/SE2003/000574 WO2003088494A1 (en) 2002-04-16 2003-04-09 Low leakage charge pump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0201158A SE522959C2 (en) 2002-04-16 2002-04-16 Low leakage type pump

Publications (3)

Publication Number Publication Date
SE0201158D0 true SE0201158D0 (en) 2002-04-16
SE0201158L SE0201158L (en) 2003-10-17
SE522959C2 SE522959C2 (en) 2004-03-16

Family

ID=20287601

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0201158A SE522959C2 (en) 2002-04-16 2002-04-16 Low leakage type pump

Country Status (3)

Country Link
AU (1) AU2003224527A1 (en)
SE (1) SE522959C2 (en)
WO (1) WO2003088494A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9165661B2 (en) 2012-02-16 2015-10-20 Cypress Semiconductor Corporation Systems and methods for switching between voltages
US9473022B2 (en) * 2015-02-10 2016-10-18 Qualcomm Incorporated Self-biased charge pump
KR102527676B1 (en) * 2018-07-13 2023-05-03 삼성전자주식회사 Phase locked loop circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064274A (en) * 1998-10-30 2000-05-16 Sony Corporation Of Japan RCB cancellation in high-side low power supply current sources
JP3250540B2 (en) * 1999-03-15 2002-01-28 日本電気株式会社 PLL circuit
US6316977B1 (en) * 2000-07-14 2001-11-13 Pmc-Sierra, Inc. Low charge-injection charge pump

Also Published As

Publication number Publication date
SE522959C2 (en) 2004-03-16
SE0201158L (en) 2003-10-17
WO2003088494A1 (en) 2003-10-23
AU2003224527A1 (en) 2003-10-27

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Legal Events

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