RU99111703A - METHOD FOR INCREASING SILICON-BASED SILICON INSTRUMENT COEFFICIENT - Google Patents

METHOD FOR INCREASING SILICON-BASED SILICON INSTRUMENT COEFFICIENT

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Publication number
RU99111703A
RU99111703A RU99111703/28A RU99111703A RU99111703A RU 99111703 A RU99111703 A RU 99111703A RU 99111703/28 A RU99111703/28 A RU 99111703/28A RU 99111703 A RU99111703 A RU 99111703A RU 99111703 A RU99111703 A RU 99111703A
Authority
RU
Russia
Prior art keywords
silicon
increasing
instrument coefficient
semiconductor devices
coefficient
Prior art date
Application number
RU99111703/28A
Other languages
Russian (ru)
Other versions
RU2168236C2 (en
Inventor
Гасан Абакарович Мустафаев
Руслан Шахбанович Тешев
Арслан Гасанович Мустафаев
Original Assignee
Кабардино-Балкарский государственный университет
Filing date
Publication date
Application filed by Кабардино-Балкарский государственный университет filed Critical Кабардино-Балкарский государственный университет
Priority to RU99111703A priority Critical patent/RU2168236C2/en
Priority claimed from RU99111703A external-priority patent/RU2168236C2/en
Publication of RU99111703A publication Critical patent/RU99111703A/en
Application granted granted Critical
Publication of RU2168236C2 publication Critical patent/RU2168236C2/en

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Claims (1)

Способ повышения коэффициента усиления полупроводниковых приборов на основе кремния, включающий операции диффузии примесей сначала акцепторной в эпитаксиальный слой n-типа, затем донорной в сформированную область р-типа, отличающийся тем, что обработку полупроводниковых приборов проводят магнитными полями в объеме пирамиды, в течение не менее 5 ч, а затем проводят отжиг при температуре 150-200°С в течение 10-30 мин.A method of increasing the gain of silicon-based semiconductor devices, including the operation of acceptor diffusion of impurities first into the n-type epitaxial layer, then of a donor into the p-type formed region, characterized in that the processing of semiconductor devices is carried out by magnetic fields in the volume of the pyramid, for at least 5 hours, and then annealing at a temperature of 150-200 ° C for 10-30 minutes.
RU99111703A 1999-06-01 1999-06-01 Method for raising gain of silicon-based semiconductor devices RU2168236C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU99111703A RU2168236C2 (en) 1999-06-01 1999-06-01 Method for raising gain of silicon-based semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU99111703A RU2168236C2 (en) 1999-06-01 1999-06-01 Method for raising gain of silicon-based semiconductor devices

Publications (2)

Publication Number Publication Date
RU99111703A true RU99111703A (en) 2001-04-20
RU2168236C2 RU2168236C2 (en) 2001-05-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU99111703A RU2168236C2 (en) 1999-06-01 1999-06-01 Method for raising gain of silicon-based semiconductor devices

Country Status (1)

Country Link
RU (1) RU2168236C2 (en)

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