RU98121155A - METHOD FOR PRODUCING RESISTORS IN IP - Google Patents

METHOD FOR PRODUCING RESISTORS IN IP

Info

Publication number
RU98121155A
RU98121155A RU98121155/28A RU98121155A RU98121155A RU 98121155 A RU98121155 A RU 98121155A RU 98121155/28 A RU98121155/28 A RU 98121155/28A RU 98121155 A RU98121155 A RU 98121155A RU 98121155 A RU98121155 A RU 98121155A
Authority
RU
Russia
Prior art keywords
resistors
amorphous silicon
layer
temperature
silicon layer
Prior art date
Application number
RU98121155/28A
Other languages
Russian (ru)
Other versions
RU2170474C2 (en
Inventor
Е.С. Горнев
А.С. Глебов
М.И. Лукасевич
В.В. Дзюбанова
Н.М. Манжа
Original Assignee
АООТ "НИИ молекулярной электроники и завод "Микрон"
Filing date
Publication date
Application filed by АООТ "НИИ молекулярной электроники и завод "Микрон" filed Critical АООТ "НИИ молекулярной электроники и завод "Микрон"
Priority to RU98121155A priority Critical patent/RU2170474C2/en
Priority claimed from RU98121155A external-priority patent/RU2170474C2/en
Publication of RU98121155A publication Critical patent/RU98121155A/en
Application granted granted Critical
Publication of RU2170474C2 publication Critical patent/RU2170474C2/en

Links

Claims (4)

1. Способ изготовления резисторов в ИС, включающий формирование на поверхности пластины кремния слоя диэлектрика, осаждение слоя аморфного кремния, формирование в нем резисторов, отличающийся тем, что перед формированием в слое аморфного кремния резисторов, его отжигают при температуре большей, чем температура последующего формирования резисторов и областей структуры ИС.1. A method of manufacturing resistors in an IC, including forming a dielectric layer on a silicon wafer surface, depositing an amorphous silicon layer, forming resistors in it, characterized in that before forming resistors in an amorphous silicon layer, it is annealed at a temperature higher than the temperature of the subsequent formation of resistors and areas of IP structure. 2. Способ по п.1, отличающийся тем, что осаждение слоя аморфного кремния производят при температуре 270-570oС.2. The method according to claim 1, characterized in that the deposition of a layer of amorphous silicon is carried out at a temperature of 270-570 o C. 3. Способ по п. 1, отличающийся тем, что перед формированием в слое аморфного кремния резисторов, его отжигают при температурах 900-1200oС.3. The method according to p. 1, characterized in that before the formation of resistors in the amorphous silicon layer, it is annealed at temperatures of 900-1200 o C. 4 Способ по п. 3, отличающийся тем, что отжиг производится в течение 30-40 мин. 4 The method according to p. 3, characterized in that the annealing is carried out for 30-40 minutes
RU98121155A 1998-11-23 1998-11-23 Method for producing resistors in integrated circuits RU2170474C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU98121155A RU2170474C2 (en) 1998-11-23 1998-11-23 Method for producing resistors in integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU98121155A RU2170474C2 (en) 1998-11-23 1998-11-23 Method for producing resistors in integrated circuits

Publications (2)

Publication Number Publication Date
RU98121155A true RU98121155A (en) 2000-08-27
RU2170474C2 RU2170474C2 (en) 2001-07-10

Family

ID=20212607

Family Applications (1)

Application Number Title Priority Date Filing Date
RU98121155A RU2170474C2 (en) 1998-11-23 1998-11-23 Method for producing resistors in integrated circuits

Country Status (1)

Country Link
RU (1) RU2170474C2 (en)

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