RU98117319A - AVALANCHE RECEIVER - Google Patents
AVALANCHE RECEIVERInfo
- Publication number
- RU98117319A RU98117319A RU98117319/25A RU98117319A RU98117319A RU 98117319 A RU98117319 A RU 98117319A RU 98117319/25 A RU98117319/25 A RU 98117319/25A RU 98117319 A RU98117319 A RU 98117319A RU 98117319 A RU98117319 A RU 98117319A
- Authority
- RU
- Russia
- Prior art keywords
- buffer layer
- semiconductor substrate
- avalanche photodetector
- photodetector according
- avalanche
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
Claims (4)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU98117319A RU2142175C1 (en) | 1998-09-18 | 1998-09-18 | Avalanche photodetector |
PCT/RU1999/000337 WO2000017940A1 (en) | 1998-09-18 | 1999-09-17 | Avalanche photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU98117319A RU2142175C1 (en) | 1998-09-18 | 1998-09-18 | Avalanche photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
RU98117319A true RU98117319A (en) | 1999-03-27 |
RU2142175C1 RU2142175C1 (en) | 1999-11-27 |
Family
ID=20210539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU98117319A RU2142175C1 (en) | 1998-09-18 | 1998-09-18 | Avalanche photodetector |
Country Status (2)
Country | Link |
---|---|
RU (1) | RU2142175C1 (en) |
WO (1) | WO2000017940A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2316848C1 (en) * | 2006-06-01 | 2008-02-10 | Садыгов Зираддин Якуб-оглы | Microchannel avalanche photodiode |
US8742543B2 (en) | 2007-02-20 | 2014-06-03 | Ziraddin Yagub-Ogly Sadygov | Microchannel avalanche photodiode (variants) |
RU2468474C2 (en) * | 2007-04-24 | 2012-11-27 | Конинклейке Филипс Электроникс Н.В. | Photodiodes and manufacture thereof |
KR101648023B1 (en) | 2010-12-21 | 2016-08-12 | 한국전자통신연구원 | Silicon photomultiplier with trench isolation |
CN110021617A (en) * | 2019-03-29 | 2019-07-16 | 中国科学院上海技术物理研究所 | A kind of clutter reduction structure of InGaAs snowslide focus planar detector |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02202071A (en) * | 1989-01-31 | 1990-08-10 | Toshiba Corp | Semiconductor photodetector and manufacture thereof |
SU1702831A1 (en) * | 1989-10-11 | 1997-06-27 | Институт ядерных исследований АН СССР | Avalanche optical detector |
RU2105388C1 (en) * | 1996-04-10 | 1998-02-20 | Виктор Михайлович Горловин | Avalanche photodetector |
RU2086047C1 (en) * | 1996-05-30 | 1997-07-27 | Зираддин Ягуб-оглы Садыгов | Cumulative photodetector |
-
1998
- 1998-09-18 RU RU98117319A patent/RU2142175C1/en not_active IP Right Cessation
-
1999
- 1999-09-17 WO PCT/RU1999/000337 patent/WO2000017940A1/en active Application Filing
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2000075965A3 (en) | Power mosfet and method of making the same | |
KR970060515A (en) | Photodetection Semiconductor Device | |
ATE231288T1 (en) | SILICON CARBIDE METAL INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR | |
WO2002019432A3 (en) | Trench mosfet with structure having low gate charge | |
EP1988579A3 (en) | Power MOSFET having a trench gate electrode | |
TW354430B (en) | Photodiode and method for fabricating the same | |
EP0794575A3 (en) | Structure and method of manufacture for CMOS semiconductor device against latch-up effect | |
KR850700186A (en) | Photo detector | |
CA2050435A1 (en) | Photo-sensing device | |
RU98117319A (en) | AVALANCHE RECEIVER | |
EP0353665A3 (en) | Ccd imager | |
KR940006395A (en) | Solid state imaging device and manufacturing method thereof | |
US4649409A (en) | Photoelectric transducer element | |
RU96119670A (en) | Avalanche Photodiode | |
RU96106491A (en) | AVALANCHE RECEIVER | |
KR910010732A (en) | Semiconductor device and manufacturing method thereof | |
RU2001104483A (en) | AVALANCHE RECEIVER | |
KR970067916A (en) | Low stress photodiode with low junction leakage | |
RU96110910A (en) | AVALANCHE RECEIVER | |
JPS6453582A (en) | Variable capacitance diode device | |
KR900008704A (en) | Semiconductor devices | |
JPS6461964A (en) | Semiconductor device | |
KR880010510A (en) | Photosensitive device | |
KR840005930A (en) | Semiconductor device | |
JPS52124887A (en) | Solar battery |