RU98106151A - SEMICONDUCTOR DEVICE BASED ON NANOSTRUCTURE - Google Patents

SEMICONDUCTOR DEVICE BASED ON NANOSTRUCTURE

Info

Publication number
RU98106151A
RU98106151A RU98106151/28A RU98106151A RU98106151A RU 98106151 A RU98106151 A RU 98106151A RU 98106151/28 A RU98106151/28 A RU 98106151/28A RU 98106151 A RU98106151 A RU 98106151A RU 98106151 A RU98106151 A RU 98106151A
Authority
RU
Russia
Prior art keywords
semiconductor device
quasi
nanostructure
device based
semiconductor element
Prior art date
Application number
RU98106151/28A
Other languages
Russian (ru)
Inventor
В.К. Смирнов
С.А. Кривелевич
Д.С. Кибалов
П.А. Лепшин
Original Assignee
ЗАО Центр "Анализ Веществ"
Filing date
Publication date
Application filed by ЗАО Центр "Анализ Веществ" filed Critical ЗАО Центр "Анализ Веществ"
Publication of RU98106151A publication Critical patent/RU98106151A/en

Links

Claims (5)

1. Полупроводниковый прибор на базе наноструктуры, характеризующийся наличием подложки, на которой расположен по крайней мере один квазиодномерный полупроводниковый элемент и контактные площадки к каждому квазиодномерному полупроводниковому элементу.1. A semiconductor device based on a nanostructure, characterized by the presence of a substrate on which at least one quasi-one-dimensional semiconductor element and contact pads to each quasi-one-dimensional semiconductor element are located. 2. Полупроводниковый прибор по п. 1, отличающийся тем, что квазиодномерный полупроводниковый элемент содержит р - n переход. 2. The semiconductor device according to claim 1, characterized in that the quasi-one-dimensional semiconductor element contains a p - n junction. 3. Полупроводниковый прибор по п. 1, отличающийся тем, что квазиодномерный полупроводниковый элемент выполнен на базе гетероструктуры. 3. The semiconductor device according to claim 1, characterized in that the quasi-one-dimensional semiconductor element is made on the basis of a heterostructure. 4. Полупроводниковый прибор п. 1, отличающийся тем, что ширина и предельная высота квазиодномерного полупроводникового элемента составляет 4 - 22 нм. 4. The semiconductor device of claim 1, characterized in that the width and limiting height of the quasi-one-dimensional semiconductor element is 4 to 22 nm. 5. Полупроводниковый прибор по п. 1, отличающийся тем, что расстояние между квазиодномерными полупроводниковыми элементами составляет 4 - 22 нм. 5. The semiconductor device according to claim 1, characterized in that the distance between the quasi-one-dimensional semiconductor elements is 4-22 nm.
RU98106151/28A 1998-04-03 SEMICONDUCTOR DEVICE BASED ON NANOSTRUCTURE RU98106151A (en)

Publications (1)

Publication Number Publication Date
RU98106151A true RU98106151A (en) 2000-02-10

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003335A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Self scanning flat display
WO2003003468A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Quantum supertransistor
WO2003003466A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Quantum supercapacitor
WO2003003467A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Quantum supermemory
US7646149B2 (en) 2003-07-22 2010-01-12 Yeda Research and Development Company, Ltd, Electronic switching device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003003335A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Self scanning flat display
WO2003003468A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Quantum supertransistor
WO2003003466A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Quantum supercapacitor
WO2003003467A1 (en) * 2001-06-29 2003-01-09 Alexander Mikhailovich Ilyanok Quantum supermemory
US7646149B2 (en) 2003-07-22 2010-01-12 Yeda Research and Development Company, Ltd, Electronic switching device

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