RU97112303A - MICROWAVE PLASMA DEPOSITION OF DIELECTRIC FILMS ON METAL SURFACES - Google Patents

MICROWAVE PLASMA DEPOSITION OF DIELECTRIC FILMS ON METAL SURFACES

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Publication number
RU97112303A
RU97112303A RU97112303/02A RU97112303A RU97112303A RU 97112303 A RU97112303 A RU 97112303A RU 97112303/02 A RU97112303/02 A RU 97112303/02A RU 97112303 A RU97112303 A RU 97112303A RU 97112303 A RU97112303 A RU 97112303A
Authority
RU
Russia
Prior art keywords
metal surfaces
dielectric films
microwave plasma
plasma deposition
plasma
Prior art date
Application number
RU97112303/02A
Other languages
Russian (ru)
Other versions
RU2117070C1 (en
Inventor
С.В. Редькин
В.В. Аристов
Original Assignee
Институт проблем технологии микроэлектроники и особочистых материалов РАН
Filing date
Publication date
Application filed by Институт проблем технологии микроэлектроники и особочистых материалов РАН filed Critical Институт проблем технологии микроэлектроники и особочистых материалов РАН
Priority to RU97112303A priority Critical patent/RU2117070C1/en
Priority claimed from RU97112303A external-priority patent/RU2117070C1/en
Application granted granted Critical
Publication of RU2117070C1 publication Critical patent/RU2117070C1/en
Publication of RU97112303A publication Critical patent/RU97112303A/en

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Claims (2)

1. Способ СВЧ-плазменного осаждения диэлектрических пленок на металлические поверхности, включающий синтез в скрещенных потоках плазмообразующего и кремнийсодержащего газов вблизи (или на) нагретой обрабатываемой поверхности, отличающийся тем, что нагрев осуществляют ИК-излучением при температуре 80 - 200oC, направленным навстречу плазменному потоку.1. The method of microwave plasma deposition of dielectric films on metal surfaces, including synthesis in crossed flows of plasma-forming and silicon-containing gases near (or) a heated treated surface, characterized in that the heating is carried out by infrared radiation at a temperature of 80 - 200 o C, directed towards plasma flow. 2. Способ по п.1, отличающийся тем, что для получения равномерных покрытий на протяженных изделиях с малым радиусом кривизны изделия располагают перпендикулярно плазменному потоку и вращают вокруг своей продольной оси. 2. The method according to claim 1, characterized in that to obtain uniform coatings on long products with a small radius of curvature of the product is placed perpendicular to the plasma flow and rotate around its longitudinal axis.
RU97112303A 1997-07-17 1997-07-17 Shf-plasma deposition of dielectric films on metal surfaces RU2117070C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU97112303A RU2117070C1 (en) 1997-07-17 1997-07-17 Shf-plasma deposition of dielectric films on metal surfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU97112303A RU2117070C1 (en) 1997-07-17 1997-07-17 Shf-plasma deposition of dielectric films on metal surfaces

Publications (2)

Publication Number Publication Date
RU2117070C1 RU2117070C1 (en) 1998-08-10
RU97112303A true RU97112303A (en) 1998-12-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU97112303A RU2117070C1 (en) 1997-07-17 1997-07-17 Shf-plasma deposition of dielectric films on metal surfaces

Country Status (1)

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RU (1) RU2117070C1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090115060A1 (en) 2007-11-01 2009-05-07 Infineon Technologies Ag Integrated circuit device and method

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