US5977604A
(en)
|
1996-03-08 |
1999-11-02 |
The Regents Of The University Of California |
Buried layer in a semiconductor formed by bonding
|
US6015980A
(en)
*
|
1996-03-08 |
2000-01-18 |
The Regents Of The University Of California |
Metal layered semiconductor laser
|
KR100189910B1
(en)
*
|
1996-05-15 |
1999-06-01 |
윤종용 |
Optical pickup
|
US5754578A
(en)
*
|
1996-06-24 |
1998-05-19 |
W. L. Gore & Associates, Inc. |
1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser
|
US5946121A
(en)
*
|
1996-07-02 |
1999-08-31 |
Motorola, Inc. |
IrDA data link with VCSEL light source
|
FR2751467B1
(en)
*
|
1996-07-17 |
1998-10-02 |
Commissariat Energie Atomique |
METHOD FOR ASSEMBLING TWO STRUCTURES AND DEVICE OBTAINED BY THE METHOD. MICROLASER APPLICATIONS
|
FR2751796B1
(en)
*
|
1996-07-26 |
1998-08-28 |
Commissariat Energie Atomique |
SOILDE MICROLASER, OPTICALLY PUMPED BY VERTICAL CAVITY SEMICONDUCTOR LASER
|
US5796771A
(en)
*
|
1996-08-19 |
1998-08-18 |
The Regents Of The University Of California |
Miniature self-pumped monolithically integrated solid state laser
|
AU3659297A
(en)
*
|
1996-08-21 |
1998-03-06 |
W.L. Gore & Associates, Inc. |
Vertical cavity surface emitting lasers using patterned wafer fusion
|
US6043515A
(en)
*
|
1996-09-17 |
2000-03-28 |
Kabushiki Kaisha Toshiba |
Optical semiconductor device
|
US5732103A
(en)
*
|
1996-12-09 |
1998-03-24 |
Motorola, Inc. |
Long wavelength VCSEL
|
US5914976A
(en)
*
|
1997-01-08 |
1999-06-22 |
W. L. Gore & Associates, Inc. |
VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
|
US6243407B1
(en)
|
1997-03-21 |
2001-06-05 |
Novalux, Inc. |
High power laser devices
|
WO1998048492A1
(en)
*
|
1997-04-23 |
1998-10-29 |
Honeywell Inc. |
Electronic devices formed from pre-patterned structures that are bonded
|
JPH10335383A
(en)
*
|
1997-05-28 |
1998-12-18 |
Matsushita Electric Ind Co Ltd |
Producing method for semiconductor device
|
CA2242670A1
(en)
*
|
1997-07-14 |
1999-01-14 |
Mitel Semiconductor Ab |
Field modulated vertical cavity surface-emitting laser with internal optical pumping
|
US6148016A
(en)
*
|
1997-11-06 |
2000-11-14 |
The Regents Of The University Of California |
Integrated semiconductor lasers and photodetectors
|
FR2784795B1
(en)
*
|
1998-10-16 |
2000-12-01 |
Commissariat Energie Atomique |
STRUCTURE COMPRISING A THIN LAYER OF MATERIAL COMPOSED OF CONDUCTIVE ZONES AND INSULATING ZONES AND METHOD FOR MANUFACTURING SUCH A STRUCTURE
|
GB2342773A
(en)
*
|
1998-10-17 |
2000-04-19 |
Mitel Semiconductor Ab |
Long wavelength vertical cavity laser with integrated short wavelength pump laser
|
US6314118B1
(en)
*
|
1998-11-05 |
2001-11-06 |
Gore Enterprise Holdings, Inc. |
Semiconductor device with aligned oxide apertures and contact to an intervening layer
|
US7408964B2
(en)
|
2001-12-20 |
2008-08-05 |
Finisar Corporation |
Vertical cavity surface emitting laser including indium and nitrogen in the active region
|
US7095770B2
(en)
|
2001-12-20 |
2006-08-22 |
Finisar Corporation |
Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
|
US7058112B2
(en)
|
2001-12-27 |
2006-06-06 |
Finisar Corporation |
Indium free vertical cavity surface emitting laser
|
US7435660B2
(en)
*
|
1998-12-21 |
2008-10-14 |
Finisar Corporation |
Migration enhanced epitaxy fabrication of active regions having quantum wells
|
US20030219917A1
(en)
*
|
1998-12-21 |
2003-11-27 |
Johnson Ralph H. |
System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
|
US7167495B2
(en)
|
1998-12-21 |
2007-01-23 |
Finisar Corporation |
Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
|
US7257143B2
(en)
*
|
1998-12-21 |
2007-08-14 |
Finisar Corporation |
Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
|
US6922426B2
(en)
|
2001-12-20 |
2005-07-26 |
Finisar Corporation |
Vertical cavity surface emitting laser including indium in the active region
|
US6975660B2
(en)
|
2001-12-27 |
2005-12-13 |
Finisar Corporation |
Vertical cavity surface emitting laser including indium and antimony in the active region
|
US7286585B2
(en)
*
|
1998-12-21 |
2007-10-23 |
Finisar Corporation |
Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
|
JP4062648B2
(en)
*
|
1998-12-25 |
2008-03-19 |
シャープ株式会社 |
Semiconductor laser and manufacturing method thereof
|
US6252896B1
(en)
|
1999-03-05 |
2001-06-26 |
Agilent Technologies, Inc. |
Long-Wavelength VCSEL using buried bragg reflectors
|
WO2000062384A1
(en)
*
|
1999-04-13 |
2000-10-19 |
Gore Enterprise Holdings, Inc. |
Intra-cavity optically pumped vertical cavity surface emitting laser
|
US6341137B1
(en)
|
1999-04-27 |
2002-01-22 |
Gore Enterprise Holdings, Inc. |
Wavelength division multiplexed array of long-wavelength vertical cavity lasers
|
US6577658B1
(en)
*
|
1999-09-20 |
2003-06-10 |
E20 Corporation, Inc. |
Method and apparatus for planar index guided vertical cavity surface emitting lasers
|
US6424669B1
(en)
|
1999-10-29 |
2002-07-23 |
E20 Communications, Inc. |
Integrated optically pumped vertical cavity surface emitting laser
|
AU2470301A
(en)
|
1999-10-29 |
2001-05-08 |
E20 Communications, Inc. |
Modulated integrated optically pumped vertical cavity surface emitting lasers
|
JP2001223429A
(en)
*
|
2000-02-09 |
2001-08-17 |
Fuji Photo Film Co Ltd |
Semiconductor laser device
|
US6445724B2
(en)
*
|
2000-02-23 |
2002-09-03 |
Sarnoff Corporation |
Master oscillator vertical emission laser
|
KR20010107524A
(en)
*
|
2000-05-24 |
2001-12-07 |
이형도 |
Two-wavelenght laser diode and method for manufacture thereof
|
US6746777B1
(en)
|
2000-05-31 |
2004-06-08 |
Applied Optoelectronics, Inc. |
Alternative substrates for epitaxial growth
|
US6888871B1
(en)
*
|
2000-07-12 |
2005-05-03 |
Princeton Optronics, Inc. |
VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
|
NL1015714C2
(en)
*
|
2000-07-14 |
2002-01-15 |
Dsm Nv |
Process for crystallizing enantiomerically enriched 2-acetylthio-3-phenylpropanoic acid.
|
AU2001285473A1
(en)
*
|
2000-08-22 |
2002-03-04 |
Regents Of The University Of California, The |
Heat spreading layers for vertical cavity surface emitting lasers
|
US6810064B1
(en)
*
|
2000-08-22 |
2004-10-26 |
The Regents Of The University Of California |
Heat spreading layers for vertical cavity surface emitting lasers
|
US6553051B1
(en)
*
|
2000-10-31 |
2003-04-22 |
Agilent Technologies, Inc. |
System for optically pumping a long wavelength laser using a short wavelength laser
|
US6434180B1
(en)
*
|
2000-12-19 |
2002-08-13 |
Lucent Technologies Inc. |
Vertical cavity surface emitting laser (VCSEL)
|
US6791119B2
(en)
*
|
2001-02-01 |
2004-09-14 |
Cree, Inc. |
Light emitting diodes including modifications for light extraction
|
CN1509406A
(en)
*
|
2001-03-15 |
2004-06-30 |
��ɣ��̬�ۺϼ������Ϲ�˾ |
Miui-motor adjustable vertical cavity photo-electro device and producing method therof
|
WO2002084829A1
(en)
*
|
2001-04-11 |
2002-10-24 |
Cielo Communications, Inc. |
Long wavelength vertical cavity surface emitting laser
|
US6556610B1
(en)
|
2001-04-12 |
2003-04-29 |
E20 Communications, Inc. |
Semiconductor lasers
|
US6567454B1
(en)
*
|
2001-05-01 |
2003-05-20 |
Sandia Corporation |
Coupled-resonator vertical-cavity lasers with two active gain regions
|
US6717964B2
(en)
*
|
2001-07-02 |
2004-04-06 |
E20 Communications, Inc. |
Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
|
US6714574B2
(en)
|
2001-07-31 |
2004-03-30 |
Bookham Technology, Plc |
Monolithically integrated optically-pumped edge-emitting semiconductor laser
|
US6671304B2
(en)
|
2001-08-28 |
2003-12-30 |
The United States Of America As Represented By The Secretary Of The Navy |
Amplitude-modulated laser for high-bandwidth communications systems
|
US6647050B2
(en)
|
2001-09-18 |
2003-11-11 |
Agilent Technologies, Inc. |
Flip-chip assembly for optically-pumped lasers
|
KR100404043B1
(en)
*
|
2001-10-19 |
2003-11-03 |
주식회사 비첼 |
Vertically integrated high-power surface-emitting laser diode and method of manufacturing the same
|
FR2833758B1
(en)
*
|
2001-12-13 |
2004-12-10 |
Commissariat Energie Atomique |
MICRO-CAVITY LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
|
JP2003195125A
(en)
*
|
2001-12-27 |
2003-07-09 |
Seiko Epson Corp |
Optical module and optical communication system
|
US7295586B2
(en)
*
|
2002-02-21 |
2007-11-13 |
Finisar Corporation |
Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
|
US6822995B2
(en)
*
|
2002-02-21 |
2004-11-23 |
Finisar Corporation |
GaAs/AI(Ga)As distributed bragg reflector on InP
|
CN1653832B
(en)
*
|
2002-05-08 |
2010-04-28 |
美商威睿电通公司 |
Fast traffic channel reconnection system and method
|
JP4157736B2
(en)
*
|
2002-08-09 |
2008-10-01 |
株式会社日立製作所 |
Optical transmitter
|
DE10243545B4
(en)
*
|
2002-09-19 |
2008-05-21 |
Osram Opto Semiconductors Gmbh |
Optically pumped semiconductor laser device
|
US6836495B2
(en)
*
|
2003-05-07 |
2004-12-28 |
Eastman Kodak Company |
Vertical cavity laser including inorganic spacer layers
|
GB0315177D0
(en)
*
|
2003-06-28 |
2003-08-06 |
Univ Heriot Watt |
Photoluminescent infrared source
|
US6790696B1
(en)
*
|
2003-06-30 |
2004-09-14 |
Eastman Kodak Company |
Providing an organic vertical cavity laser array device with etched region in dielectric stack
|
US6947466B2
(en)
*
|
2004-01-29 |
2005-09-20 |
Coherent, Inc. |
Optically pumped edge-emitting semiconductor laser
|
FR2870051B1
(en)
*
|
2004-05-04 |
2009-04-03 |
Commissariat Energie Atomique |
RADIATION TRANSMITTER WITH INCLINE PUMP BEAM
|
CA2581614A1
(en)
*
|
2004-10-01 |
2006-04-13 |
Finisar Corporation |
Vertical cavity surface emitting laser having multiple top-side contacts
|
US7860137B2
(en)
*
|
2004-10-01 |
2010-12-28 |
Finisar Corporation |
Vertical cavity surface emitting laser with undoped top mirror
|
US20060078031A1
(en)
*
|
2004-10-08 |
2006-04-13 |
Govorkov Sergei V |
InGaN LED pumped II-VI semiconductor laser
|
KR100668329B1
(en)
*
|
2005-02-16 |
2007-01-12 |
삼성전자주식회사 |
Modulator integrated semiconductor laser device
|
US7826511B1
(en)
*
|
2005-03-25 |
2010-11-02 |
Hrl Laboratories, Llc |
Optically pumped laser with an integrated optical pump
|
US7266279B1
(en)
|
2005-03-25 |
2007-09-04 |
Hrl Laboratories, Llc |
Optically pumped stepped multi-well laser
|
KR101228108B1
(en)
*
|
2005-11-09 |
2013-01-31 |
삼성전자주식회사 |
Vertical external cavity surface emitting laser with pump beam reflector
|
JP4518018B2
(en)
*
|
2005-12-20 |
2010-08-04 |
株式会社デンソー |
Multi-wavelength laser equipment
|
DE102006024220A1
(en)
*
|
2006-04-13 |
2007-10-18 |
Osram Opto Semiconductors Gmbh |
Optoelectronic semiconductor component
|
KR100829562B1
(en)
*
|
2006-08-25 |
2008-05-14 |
삼성전자주식회사 |
Semiconductor laser diode having wafer-bonded structure and method of fabricating the same
|
US7433374B2
(en)
*
|
2006-12-21 |
2008-10-07 |
Coherent, Inc. |
Frequency-doubled edge-emitting semiconductor lasers
|
DE102008017268A1
(en)
*
|
2008-03-03 |
2009-09-10 |
Osram Opto Semiconductors Gmbh |
Surface-emitting semiconductor laser with monolithically integrated pump laser
|
US7940818B2
(en)
*
|
2009-01-13 |
2011-05-10 |
The University Of Maryland, Baltimore County |
Passively mode locked quantum cascade lasers
|
WO2010129464A1
(en)
*
|
2009-05-05 |
2010-11-11 |
3M Innovative Properties Company |
Re-emitting semiconductor carrier devices for use with leds and methods of manufacture
|
US9270086B2
(en)
*
|
2009-07-29 |
2016-02-23 |
The Regents Of The University Of Michigan |
Organic laser
|
US9912118B2
(en)
|
2010-06-28 |
2018-03-06 |
Iulian Basarab Petrescu-Prahova |
Diode laser type device
|
US9755402B2
(en)
|
2010-06-28 |
2017-09-05 |
Iulian Basarab Petrescu-Prahova |
Edge emitter semiconductor laser type of device with end segments for mirrors protection
|
BR112013022631A2
(en)
*
|
2011-03-09 |
2016-12-06 |
Koninkl Philips Nv |
vcsel matrix
|
JP5792486B2
(en)
*
|
2011-03-18 |
2015-10-14 |
株式会社東芝 |
Semiconductor light emitting device and optical coupling device
|
US8687201B2
(en)
|
2012-08-31 |
2014-04-01 |
Lightlab Imaging, Inc. |
Optical coherence tomography control systems and methods
|
EP3304659B1
(en)
*
|
2015-06-05 |
2023-03-22 |
Iulian Basarab Petrescu-Prahova |
Emitter semiconductor laser type of device
|
US10290994B2
(en)
*
|
2015-10-30 |
2019-05-14 |
Canon Kabushiki Kaisha |
Laser device, information acquisition device, and imaging system
|
JP6862658B2
(en)
*
|
2016-02-15 |
2021-04-21 |
株式会社リコー |
Optical amplifier, driving method of optical amplifier and optical amplification method
|
JP7334439B2
(en)
*
|
2019-03-25 |
2023-08-29 |
富士フイルムビジネスイノベーション株式会社 |
vertical cavity surface emitting laser element array chip, light emitting device, optical device and information processing device
|