RU96121814A - METHOD FOR DETERMINING THE RESIDUAL RESOURCE OF A POWER DIODE - Google Patents

METHOD FOR DETERMINING THE RESIDUAL RESOURCE OF A POWER DIODE

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Publication number
RU96121814A
RU96121814A RU96121814/09A RU96121814A RU96121814A RU 96121814 A RU96121814 A RU 96121814A RU 96121814/09 A RU96121814/09 A RU 96121814/09A RU 96121814 A RU96121814 A RU 96121814A RU 96121814 A RU96121814 A RU 96121814A
Authority
RU
Russia
Prior art keywords
diode
determining
power diode
temperature
residual resource
Prior art date
Application number
RU96121814/09A
Other languages
Russian (ru)
Other versions
RU2121153C1 (en
Inventor
Е.А. Чеботарев
А.П. Захаров
П.В. Губарев
А.А. Резниченко
Е.М. Зимницкий
Original Assignee
Е.А. Чеботарев
А.П. Захаров
П.В. Губарев
А.А. Резниченко
Е.М. Зимницкий
Filing date
Publication date
Application filed by Е.А. Чеботарев, А.П. Захаров, П.В. Губарев, А.А. Резниченко, Е.М. Зимницкий filed Critical Е.А. Чеботарев
Priority to RU96121814A priority Critical patent/RU2121153C1/en
Priority claimed from RU96121814A external-priority patent/RU2121153C1/en
Application granted granted Critical
Publication of RU2121153C1 publication Critical patent/RU2121153C1/en
Publication of RU96121814A publication Critical patent/RU96121814A/en

Links

Claims (1)

Способ определения остаточного ресурса силового диода, при котором диод нагревают током, измеряют падение и напряжение и определяют тепловое сопротивление диода, отличающийся тем, что диод направляют постоянным током, измеряют прямой ток, падение напряжения, температуру корпуса, температуру полупроводниковой структуры диода в установившемся режиме и определяют тепловое сопротивление согласно зависимости
Figure 00000001

где τ1 - температура корпуса;
τ2 - температура полупроводниковой структуры;
I - прямой ток;
ΔU - падение напряжения.A method for determining the residual life of a power diode, in which the diode is heated by current, the drop and voltage are measured and the thermal resistance of the diode is determined, characterized in that the diode is directed by direct current, direct current, voltage drop, case temperature, temperature of the semiconductor structure of the diode in steady state are measured and determine the thermal resistance according to
Figure 00000001

where τ 1 is the temperature of the housing;
τ 2 is the temperature of the semiconductor structure;
I - direct current;
ΔU is the voltage drop.
RU96121814A 1996-11-10 1996-11-10 Method for determining power diode residual service life RU2121153C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU96121814A RU2121153C1 (en) 1996-11-10 1996-11-10 Method for determining power diode residual service life

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU96121814A RU2121153C1 (en) 1996-11-10 1996-11-10 Method for determining power diode residual service life

Publications (2)

Publication Number Publication Date
RU2121153C1 RU2121153C1 (en) 1998-10-27
RU96121814A true RU96121814A (en) 1999-01-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU96121814A RU2121153C1 (en) 1996-11-10 1996-11-10 Method for determining power diode residual service life

Country Status (1)

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RU (1) RU2121153C1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6221408B2 (en) * 2013-06-27 2017-11-01 富士電機株式会社 Thermal resistance measuring method and thermal resistance measuring device

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