RU96119669A - Avalanche Detector - Google Patents

Avalanche Detector

Info

Publication number
RU96119669A
RU96119669A RU96119669/25A RU96119669A RU96119669A RU 96119669 A RU96119669 A RU 96119669A RU 96119669/25 A RU96119669/25 A RU 96119669/25A RU 96119669 A RU96119669 A RU 96119669A RU 96119669 A RU96119669 A RU 96119669A
Authority
RU
Russia
Prior art keywords
substrate
semiconductor
semiconductor regions
separated
avalanche detector
Prior art date
Application number
RU96119669/25A
Other languages
Russian (ru)
Other versions
RU2102820C1 (en
Inventor
З.Я. оглы Садыгов
Original Assignee
З.Я. оглы Садыгов
Filing date
Publication date
Application filed by З.Я. оглы Садыгов filed Critical З.Я. оглы Садыгов
Priority to RU96119669/25A priority Critical patent/RU2102820C1/en
Priority claimed from RU96119669/25A external-priority patent/RU2102820C1/en
Application granted granted Critical
Publication of RU2102820C1 publication Critical patent/RU2102820C1/en
Publication of RU96119669A publication Critical patent/RU96119669A/en

Links

Claims (1)

Лавинный детектор, включающий полупроводниковую подложку, на поверхности которой расположены полупроводниковые области противоположного подложке типа проводимости и полевой электрод, отделенный от подложки буферным слоем, отличающийся тем, что полупроводниковые области отделены от подложки полупроводниковыми слоями с пониженной по отношению к полупроводниковым областям проводимостью, образующими с подложкой p-n-переход, причем упомянутые полупроводниковые области соединены с полевым электродом через пленочный резистор, отделенный от полупроводниковых слоев буферным слоем, а на границе полупроводниковых слоев с подложкой выполнены дополнительные полупроводниковые области с повышенной по отношению к подложке проводимостью.An avalanche detector comprising a semiconductor substrate, on the surface of which there are semiconductor regions of the opposite type of conductivity substrate and a field electrode separated from the substrate by a buffer layer, characterized in that the semiconductor regions are separated from the substrate by semiconductor layers with reduced conductivity with respect to the semiconductor regions forming the substrate pn junction, wherein said semiconductor regions are connected to the field electrode via a film resistor, separated d from the semiconductor layers by the buffer layer, and additional semiconductor regions with increased conductivity relative to the substrate are made at the interface between the semiconductor layers and the substrate.
RU96119669/25A 1996-10-10 1996-10-10 Avalanche detector RU2102820C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU96119669/25A RU2102820C1 (en) 1996-10-10 1996-10-10 Avalanche detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU96119669/25A RU2102820C1 (en) 1996-10-10 1996-10-10 Avalanche detector

Publications (2)

Publication Number Publication Date
RU2102820C1 RU2102820C1 (en) 1998-01-20
RU96119669A true RU96119669A (en) 1998-03-27

Family

ID=20186185

Family Applications (1)

Application Number Title Priority Date Filing Date
RU96119669/25A RU2102820C1 (en) 1996-10-10 1996-10-10 Avalanche detector

Country Status (1)

Country Link
RU (1) RU2102820C1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101648023B1 (en) 2010-12-21 2016-08-12 한국전자통신연구원 Silicon photomultiplier with trench isolation
US8871557B2 (en) 2011-09-02 2014-10-28 Electronics And Telecommunications Research Institute Photomultiplier and manufacturing method thereof
JP6239758B2 (en) 2013-08-13 2017-11-29 ゼコテック フォトニクス インコーポレイテッドＺｅｃｏｔｅｋ Ｐｈｏｔｏｎｉｃｓ Ｉｎｃ． Multi-pixel avalanche photodiode
RU2650417C1 (en) * 2017-04-25 2018-04-13 Зираддин Ягуб оглы Садыгов Semiconductor avalanche photodetector

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