RU96116796A - SEMICONDUCTOR DEVICE - Google Patents
SEMICONDUCTOR DEVICEInfo
- Publication number
- RU96116796A RU96116796A RU96116796/25A RU96116796A RU96116796A RU 96116796 A RU96116796 A RU 96116796A RU 96116796/25 A RU96116796/25 A RU 96116796/25A RU 96116796 A RU96116796 A RU 96116796A RU 96116796 A RU96116796 A RU 96116796A
- Authority
- RU
- Russia
- Prior art keywords
- film
- junction
- schottky barrier
- film thickness
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 5
- 230000015556 catabolic process Effects 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
Claims (1)
где Ui(x) - напряжение пробоя полупроводниковой пленки в сечение xy;
y - координата, отсчитываемая от металлургической границы p-n-перехода или барьера Шоттки в направлении вдоль толщины пленки,
q - элементарный заряд;
Ni(x,y,z) - профиль распределения примеси в пленке;
d(x,z) - толщина пленки 3;
z, x - координаты на поверхности пленки;
εs - диэлектрическая проницаемость полупроводниковой пленки;
Uk - встроенный потенциал;A semiconductor device containing a dielectric layer 1, on one surface of which a conductive portion 2 is formed, on the other surface of which a semiconductor film of electronic or hole type conductivity 3 with an ohmic contact is formed, on the surface of which a pn junction or a Schottky barrier with another ohmic contact is made, selection the doping profile of the film and the film thickness is limited by the condition that the film or its part is completely depleted by the main charge carriers until the breakdown of the pn junction or the Schottky barrier at giving it external bias
where Ui (x) is the breakdown voltage of the semiconductor film in the cross section xy;
y is the coordinate measured from the metallurgical boundary of the pn junction or the Schottky barrier in the direction along the film thickness,
q is the elementary charge;
Ni (x, y, z) is the distribution profile of the impurity in the film;
d (x, z) is the film thickness 3;
z, x — coordinates on the film surface;
ε s is the dielectric constant of the semiconductor film;
Uk is the built-in potential;
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/043,759 US6037650A (en) | 1995-12-15 | 1996-12-02 | Variable capacitance semiconductor device |
PCT/RU1996/000334 WO1997023001A1 (en) | 1995-12-15 | 1996-12-02 | Semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU96124161A Substitution RU2139599C1 (en) | 1996-12-24 | 1996-12-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
RU96116796A true RU96116796A (en) | 1998-11-27 |
Family
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