RU96116796A - SEMICONDUCTOR DEVICE - Google Patents

Claims (1)

A semiconductor device containing a dielectric layer 1, on one surface of which a conductive portion 2 is formed, on the other surface of which a semiconductor film of electronic or hole type conductivity 3 with an ohmic contact is formed, on the surface of which a pn junction or a Schottky barrier with another ohmic contact is made, selection the doping profile of the film and the film thickness is limited by the condition that the film or its part is completely depleted by the main charge carriers until the breakdown of the pn junction or the Schottky barrier at giving it external bias

where Ui (x) is the breakdown voltage of the semiconductor film in the cross section xy;
y is the coordinate measured from the metallurgical boundary of the pn junction or the Schottky barrier in the direction along the film thickness,
q is the elementary charge;
Ni (x, y, z) is the distribution profile of the impurity in the film;
d (x, z) is the film thickness 3;
z, x — coordinates on the film surface;
ε _s is the dielectric constant of the semiconductor film;
Uk is the built-in potential;