RU94045227A - Method for generation of structures of silicon on insulator by means of zone recrystallization and device which implements said method - Google Patents

Method for generation of structures of silicon on insulator by means of zone recrystallization and device which implements said method

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Publication number
RU94045227A
RU94045227A RU94045227/25A RU94045227A RU94045227A RU 94045227 A RU94045227 A RU 94045227A RU 94045227/25 A RU94045227/25 A RU 94045227/25A RU 94045227 A RU94045227 A RU 94045227A RU 94045227 A RU94045227 A RU 94045227A
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RU
Russia
Prior art keywords
plate
silicon
film structure
lamps
substrate
Prior art date
Application number
RU94045227/25A
Other languages
Russian (ru)
Other versions
RU2133520C1 (en
Inventor
А.Б. Лиманов
Е.И. Гиваргизов
Original Assignee
Товарищество с ограниченной ответственностью - Научный центр "Эпитаксия"
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Application filed by Товарищество с ограниченной ответственностью - Научный центр "Эпитаксия" filed Critical Товарищество с ограниченной ответственностью - Научный центр "Эпитаксия"
Priority to RU94045227A priority Critical patent/RU2133520C1/en
Publication of RU94045227A publication Critical patent/RU94045227A/en
Application granted granted Critical
Publication of RU2133520C1 publication Critical patent/RU2133520C1/en

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Abstract

FIELD: electronic instruments. SUBSTANCE: method involves generation of film structure with substrate using layers of dielectric and silicon film, which are generated on one or both sides of substrate, heating film structure to temperature above 1320 C but lower than temperature of silicon melting. In addition method involves heating opposite side by means of beam which is focused to narrow strip so that half of width of power distribution across narrow strip is less than 0.5 mm for half of amplitude of power distribution, generation of melting area in silicon film and moving this area. corresponding device has housing, tube lamps, which are mounted in housing, plate which is mounted above lamps and have cone-shaped hole, quartz plate which attached to plate on side of lamps, point supports which are mounted in plate and which vertices are located in cone hole, screen with hole which is located above plate and has two moving parts, and zone heater which is located above screen. EFFECT: low deformation of film structure, increased efficiency.

Claims (1)

Предложен способ получения структур кремния-на-изоляторе, заключающийся в формировании пленочной структуры с подложкой, слоями диэлектрика и пленкой кремния, которые формируют с одной или с двух сторон подложки, в однородном нагреве с одной стороны пленочной структуры выше 1320oС и ниже точки плавления кремния, нагреве с противоположной стороны пучком излучения, сфокусированным в узкую полосу так, чтобы полуширина распределения энергии поперек узкой полосы на уровне половины амплитуды распределения составляла менее 0,5 мм, формировании в пленке кремния зоны расплава и перемещении зоны. Устройство содержит перемещающийся корпус, трубчатые лампы, установленные в корпусе, плиту, закрепленную над лампами и имеющую конусообразное отверстие, кварцевую пластину, прикрепленную к плите со стороны ламп, точечные опоры, закрепленные в плите вершинами в конусообразном отверстии, экран с отверстием, расположенный над плитой и выполненный из двух перемещающихся частей, и нагреватель зоны, прикрепленный над экраном. Предлагаемый способ и устройство позволяют получать структуры кремния-на-изоляторе с низким уровнем деформации пленочной структуры при более высокой производительности.
Figure 00000001
A method for producing silicon-on-insulator structures is proposed, which consists in forming a film structure with a substrate, dielectric layers and a silicon film that form on one or both sides of the substrate, in uniform heating on one side of the film structure above 1320 o C and below the melting point silicon, heating from the opposite side by a radiation beam focused into a narrow strip so that the half-width of the energy distribution across the narrow strip at half the distribution amplitude is less than 0.5 mm, forming silicon film and moving the melt zone area. The device comprises a moving housing, tubular lamps mounted in the housing, a plate fixed above the lamps and having a cone-shaped opening, a quartz plate attached to the plate from the lamp side, point supports fixed in the plate with vertices in the conical opening, a screen with an opening located above the plate and made of two moving parts, and a zone heater attached above the screen. The proposed method and device allows to obtain structures of silicon-on-insulator with a low level of deformation of the film structure with higher performance.
Figure 00000001
RU94045227A 1994-12-26 1994-12-26 Method and device for producing silicon-on- insulator structure by regional recrystallization method RU2133520C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU94045227A RU2133520C1 (en) 1994-12-26 1994-12-26 Method and device for producing silicon-on- insulator structure by regional recrystallization method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU94045227A RU2133520C1 (en) 1994-12-26 1994-12-26 Method and device for producing silicon-on- insulator structure by regional recrystallization method

Publications (2)

Publication Number Publication Date
RU94045227A true RU94045227A (en) 1996-10-27
RU2133520C1 RU2133520C1 (en) 1999-07-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU94045227A RU2133520C1 (en) 1994-12-26 1994-12-26 Method and device for producing silicon-on- insulator structure by regional recrystallization method

Country Status (1)

Country Link
RU (1) RU2133520C1 (en)

Also Published As

Publication number Publication date
RU2133520C1 (en) 1999-07-20

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