RU94045227A - Method for generation of structures of silicon on insulator by means of zone recrystallization and device which implements said method - Google Patents
Method for generation of structures of silicon on insulator by means of zone recrystallization and device which implements said methodInfo
- Publication number
- RU94045227A RU94045227A RU94045227/25A RU94045227A RU94045227A RU 94045227 A RU94045227 A RU 94045227A RU 94045227/25 A RU94045227/25 A RU 94045227/25A RU 94045227 A RU94045227 A RU 94045227A RU 94045227 A RU94045227 A RU 94045227A
- Authority
- RU
- Russia
- Prior art keywords
- plate
- silicon
- film structure
- lamps
- substrate
- Prior art date
Links
Abstract
FIELD: electronic instruments. SUBSTANCE: method involves generation of film structure with substrate using layers of dielectric and silicon film, which are generated on one or both sides of substrate, heating film structure to temperature above 1320 C but lower than temperature of silicon melting. In addition method involves heating opposite side by means of beam which is focused to narrow strip so that half of width of power distribution across narrow strip is less than 0.5 mm for half of amplitude of power distribution, generation of melting area in silicon film and moving this area. corresponding device has housing, tube lamps, which are mounted in housing, plate which is mounted above lamps and have cone-shaped hole, quartz plate which attached to plate on side of lamps, point supports which are mounted in plate and which vertices are located in cone hole, screen with hole which is located above plate and has two moving parts, and zone heater which is located above screen. EFFECT: low deformation of film structure, increased efficiency.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU94045227A RU2133520C1 (en) | 1994-12-26 | 1994-12-26 | Method and device for producing silicon-on- insulator structure by regional recrystallization method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU94045227A RU2133520C1 (en) | 1994-12-26 | 1994-12-26 | Method and device for producing silicon-on- insulator structure by regional recrystallization method |
Publications (2)
Publication Number | Publication Date |
---|---|
RU94045227A true RU94045227A (en) | 1996-10-27 |
RU2133520C1 RU2133520C1 (en) | 1999-07-20 |
Family
ID=20163472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU94045227A RU2133520C1 (en) | 1994-12-26 | 1994-12-26 | Method and device for producing silicon-on- insulator structure by regional recrystallization method |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU2133520C1 (en) |
-
1994
- 1994-12-26 RU RU94045227A patent/RU2133520C1/en active
Also Published As
Publication number | Publication date |
---|---|
RU2133520C1 (en) | 1999-07-20 |
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