RU94026729A - Device for non-destructive measurement of insulating and semiconductor film thickness - Google Patents

Device for non-destructive measurement of insulating and semiconductor film thickness

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Publication number
RU94026729A
RU94026729A RU94026729/28A RU94026729A RU94026729A RU 94026729 A RU94026729 A RU 94026729A RU 94026729/28 A RU94026729/28 A RU 94026729/28A RU 94026729 A RU94026729 A RU 94026729A RU 94026729 A RU94026729 A RU 94026729A
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RU
Russia
Prior art keywords
film
point
lens
flat mirror
photodetector
Prior art date
Application number
RU94026729/28A
Other languages
Russian (ru)
Other versions
RU2102702C1 (en
Inventor
А.В. Федорцов
Original Assignee
А.В. Федорцов
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by А.В. Федорцов filed Critical А.В. Федорцов
Priority to RU94026729A priority Critical patent/RU2102702C1/en
Publication of RU94026729A publication Critical patent/RU94026729A/en
Application granted granted Critical
Publication of RU2102702C1 publication Critical patent/RU2102702C1/en

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  • Length Measuring Devices By Optical Means (AREA)

Abstract

FIELD: non-destructive tests of insulating and semiconductor films based on counting extremes of dependence of laser beam reflectance by film on varied angle of incidence of this beam on fixed measured film observed when angle of incidence of beam varies in specified range. SUBSTANCE: device has laser whose beam is directed onto flat mirror revolving about optical axis crossing its surface; first lens projecting image film point onto axis of revolution of flat mirror; and second lens projecting image of same point of film onto photodetector connected to recording instrument. With such arrangement of components, flat mirror rotation causes laser beam reflected by this mirror at point, which is image of film point being measured, to slide over lens surface and upon refraction by this lens it arrives at same point on film but at different positions, that is, at different angles. Second lens always directs beam reflected by film at point of measurement onto photodetector. As a result, recording instrument (such as oscilloscope) connected to photodetector records angular dependence of laser beam reflectance of analyzed film during flat mirror rotation. EFFECT: reduced cost of device due to dispensing with elliptical mirrors, enlarged functional capabilities.

Claims (1)

Предложено устройство для неразрушающего измерения толщины диэлектрических и полупроводниковых пленок, основанное на подсчете числа экстремумов зависимости коэффициента отражения пленкой лазерного луча от изменяемого угла падения этого луча на неподвижную измеряемую пленку, наблюдающихся при изменении угла падения луча в заданных пределах. Устройство содержит лазер, луч которого направлен на плоское зеркало, вращающееся вокруг оптической оси, проходящей через его поверхность, первую линзу, проецирующую изображение измеряемой точки пленки на ось вращения плоского зеркала, и вторую линзу, проецирующую изображение той же точки пленки на фотоприемник, с которым соединен регистрирующий прибор. При таком расположении элементов при вращении плоского зеркала луч лазера, отражаемый этим зеркалом в точке, являющейся изображением измеряемой точки пленки, скользит по поверхности линзы и после преломления ею поступает всегда в одну и ту же измеряемую точку на пленке, но при разных положениях - под разными углами. Вторая линза: луч, отражаемый пленкой в точке измерения, всегда направлен на фотоприемник. В результате регистрирующий прибор (например, осциллограф), соединенный с фотоприемником, при вращении плоского зеркала регистрирует угловую зависимость коэффициента отражения лазерного луча измеряемой пленкой. Отсутствие в устройстве эллиптических зеркал, имеющихся в прототипе, резко снижает стоимость устройства, расширяя область его возможного применения.A device for non-destructive measurement of the thickness of dielectric and semiconductor films is proposed, based on counting the number of extrema of the dependence of the reflection coefficient of a laser beam on a variable angle of incidence of this beam on a stationary measured film, observed when the angle of incidence of the beam varies within specified limits. The device comprises a laser, the beam of which is directed at a flat mirror rotating around an optical axis passing through its surface, a first lens projecting an image of a measured point of a film onto an axis of rotation of a flat mirror, and a second lens projecting an image of the same point of a film onto a photodetector with which Recording device connected. With this arrangement of elements during the rotation of a flat mirror, the laser beam reflected by this mirror at a point that is an image of the measured point of the film slides along the surface of the lens and after refraction it always enters the same measured point on the film, but at different positions under different corners. The second lens: the beam reflected by the film at the measuring point is always directed to the photodetector. As a result, a recording device (for example, an oscilloscope) connected to a photodetector, while rotating a flat mirror, registers the angular dependence of the reflection coefficient of the laser beam by the measured film. The absence in the device of the elliptical mirrors available in the prototype dramatically reduces the cost of the device, expanding the scope of its possible application.
RU94026729A 1994-07-08 1994-07-08 Device for nondestructive measurement of width of dielectric and semiconductor films RU2102702C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU94026729A RU2102702C1 (en) 1994-07-08 1994-07-08 Device for nondestructive measurement of width of dielectric and semiconductor films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU94026729A RU2102702C1 (en) 1994-07-08 1994-07-08 Device for nondestructive measurement of width of dielectric and semiconductor films

Publications (2)

Publication Number Publication Date
RU94026729A true RU94026729A (en) 1996-05-10
RU2102702C1 RU2102702C1 (en) 1998-01-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU94026729A RU2102702C1 (en) 1994-07-08 1994-07-08 Device for nondestructive measurement of width of dielectric and semiconductor films

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RU (1) RU2102702C1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111487470A (en) * 2020-03-18 2020-08-04 山东国瓷功能材料股份有限公司 Device and method for testing dielectric property of material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111487470A (en) * 2020-03-18 2020-08-04 山东国瓷功能材料股份有限公司 Device and method for testing dielectric property of material
CN111487470B (en) * 2020-03-18 2022-05-31 山东国瓷功能材料股份有限公司 Device and method for testing dielectric property of material

Also Published As

Publication number Publication date
RU2102702C1 (en) 1998-01-20

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