RU94020883A - Method for nondestructive quality control of multilayer semiconductor structures on semiinsulating substrates - Google Patents

Abstract

FIELD: semiconductor engineering. SUBSTANCE: method involves illumination of structure with light pulse whose quantum energy is higher than semiconductor for bidden gap width and measurement of nonequilibrium conductance of structure by using microwave relaxation method. Nondestructive contacts are formed in structure; bias voltage is applied to structure and the latter is illuminated on substrate side; then light is turned off, and relaxation time constant is recorded which is used to determine concentration of holes. EFFECT: enlarged functional capabilities and informative capacity of method due to determining concentration of holes in buffer layer of typical multilayer structures used for manufacturing integrated circuits and field-effect transistors.

Claims (1)

The invention relates to semiconductor technology and can be used to control semiconductor structures. The method includes illuminating the structure with a light pulse with a quantum energy greater than the band gap of the semiconductor and measuring the microwave method of relaxation of the nonequilibrium conductivity of the structure. In order to expand the functionality and informational content of the method by determining the concentration of holes in the buffer layer of typical multilayer structures intended for the manufacture of integrated circuits and field effect transistors, they form non-destructive contacts to the structure, apply bias to the structure and illuminate it with light from the substrate side, turn off the light and register the conduction relaxation time constant, from which the hole concentration is determined.