RU94016378A - Single-register memory elements and matrices which are made from them; methods of modulation in single- crystal semiconductor material - Google Patents

Abstract

FIELD: computer engineering. SUBSTANCE: invention describes solid-body, direct-recording, power-independent multiple-bit single-register memory unit which provides multiple power-independent configurations of local nuclear and/or electron order. Said configurations could be repeatedly selected by electric input signal with variable pulse voltage and duration. In addition invention describes single-crystal semiconductor materials which could be modulated in crystal phase range in order to get arbitrary Fermi position from wide dynamic range while in general constant prohibited area in all range is kept even after cessation of modulating field. In addition invention provides compositional modulation of semiconductor material which is used for production of memory elements, which contain electric contact which is made from amorphous silicon in either separately or in combination with layer of amorphous carbon. Said memory elements 30 could be shaped as storing areas 36 which are embraced by oxide layers 20, 39. Said memory elements could be also shaped as matrix with access diodes between n-type layers 18 and p-type areas 24. In this case elements are located in intersection points of lines of n+ areas 12 and column areas 42. EFFECT: increased functional capabilities, increased stability.

Claims (1)

Solid-state with direct rewriting non-volatile multi-bit single-cell memory is characterized by numerous non-volatile determinable configurations of local atomic and / or electronic order, which can be selectively and repeatedly selected by electrical input signals with varying pulse voltage and duration. A unique class of microcrystalline semiconductor materials is also disclosed that can be modulated within the crystalline phase in order to acquire any one of the large dynamic range of Fermi level positions while maintaining a substantially constant band gap in the entire range even after the modulating field is removed. These memory elements are characterized by increased stability achieved through the use of composite modulation of the semiconductor material from which the memory elements are made. The memory elements may comprise an electrical contact formed of amorphous silicon, either individually or in combination with an amorphous carbon layer. The memory elements 30 may be in the form of regions 36 of the memory material surrounded by layers of oxide 20, 39. The memory elements may be in the form of a matrix having sample diodes formed between the N type layers 18 and the P type regions 24 with elements located at the intersection points lines of rows formed by regions 12 N + and lines of columns 42.