RU2771355C1 - Electronic circuit supply voltage stabilizer - Google Patents

Abstract

FIELD: radio electronics.

SUBSTANCE: invention relates to the field of radio electronics and can be used as a supply voltage stabilizer when creating micropower electronic circuits with autonomous power supply. The voltage regulator for supplying electronic circuits contains: an unstable voltage source; two resistors; two field-effect transistors with an induced n-channel; zener diode; diode; load.

EFFECT: expansion of functionality.

1 cl, 1 tbl, 9 dwg

Description

The technical field to which the invention belongs

The invention relates to the field of radio electronics and can be used as a supply voltage stabilizer when creating micropower electronic circuits with autonomous power supply.

State of the art

Known constant voltage stabilizer [SU A.S. No. 1129594, DC voltage stabilizer], containing a control transistor included in the power circuit, a feedback node, the inputs of which are connected to the output terminal and a common bus, and the output to the base of the control transistor and through an adjustable two-pole to the input terminal, and the adjustable two-terminal is made in the form a potentiometer and a λ-transistor connected in parallel, consisting of two field-effect transistors of different types of conductivity connected in series, while the drain of the first transistor is connected to the input terminal, the gate of the first transistor is connected to the drain of the second transistor and the base of the regulating transistor, the gate of the second transistor is the control output λ- transistor and is connected to the midpoint of the potentiometer, the extreme conclusions of which are connected between the input terminal and the base of the regulating transistor.

The disadvantage of this device is the significant complexity of circuit implementation.

Known voltage regulator for electronic circuits (patent RU No. 2727713, IPC G05F 3/16).

The voltage regulator for supplying electronic circuits contains: a regulating bipolar transistor npn type in the form of an emitter follower, the collector of which is connected to the potential output of an unstable voltage source; a field-effect transistor with a p-n junction and an n -channel, the drain of which is connected to the collector of the regulating transistor; a potentiometer in the form of two series-connected resistors, while the free output of the first resistor is connected to the base of the regulating transistor; a load connected between the emitter of the bipolar transistor and the common source bus; two semiconductor diodes, and the source of the field-effect transistor is connected to the connection point of the base of the bipolar transistor and the first resistor; the gate of the field-effect transistor is connected to the connection point of the first and second resistors, and the free terminal of the second resistor is connected to a common bus through two semiconductor diodes connected in series in the forward direction.

The disadvantage of this device are limited functionality due to:

- low coefficient of voltage stabilization;

- low voltage temperature coefficient.

The closest analogue - prototype to the claimed technical solution is the voltage regulator for the supply of electronic circuits (patent RU No. 2755670, IPC G05F 1/565).

The voltage regulator for supplying electronic circuits contains: an unstable voltage source; field-effect transistor with pn- junction and n -channel; first and second resistors; field-effect transistor with induced n -channel; load, and the drain of the field-effect transistor with pn- junction and n -channel is connected to the drain of the field-effect transistor with an induced n -channel and a potential output of an unstable voltage source, the second output of which serves as a common bus of the device; the source of the field-effect transistor with p-n junction and n -channel is connected to the gate of the transistor with induced n -channel and the first terminal of the first resistor, the second terminal of which is connected to the gate of the field-effect transistor with p-n junction and n -channel and the first terminal of the second a resistor, the second output of which is connected to a common bus; the source of the field-effect transistor with the induced n -channel is connected through the load to the common bus of the voltage source.

The disadvantage of this device are limited functionality due to:

- low coefficient of voltage stabilization;

- low voltage temperature coefficient.

Disclosure of invention

The technical result that can be achieved using the present invention is to expand the functionality.

The technical result is achieved by the fact that in the voltage regulator of the electronic circuits, containing: an unstable voltage source; field-effect transistor with induced n -channel; two resistors; load, and the drain of the field-effect transistor with induced n -channel connected to the potential output of an unstable voltage source, the second output of which serves as a common bus device; the source of the field-effect transistor with an induced n -channel is connected through the load to the common bus of the device; the second output of the second resistor is connected to the common bus of the device, the second field-effect transistor with an induced n -channel, a zener diode, a diode are introduced, and the first output of the first resistor is connected to the drain of the first field-effect transistor with an induced n -channel and a potential output of an unstable voltage source; the second terminal of the first resistor and the drain of the second FET with induced n -channel connected to the gate of the first FET with induced n -channel; the source of the second field-effect transistor with induced n -channel is connected to the common bus of the device, and the gate is connected to the cathode of the diode and the first terminal of the second resistor; the anode of the diode is connected to the anode of the zener diode, the cathode of which is connected to the source of the first field-effect transistor with an induced n -channel and the first load terminal.

Brief description of the drawings

In FIG. 1 shows a functional diagram of a voltage regulator for supplying electronic circuits.

).In FIG. 2 shows the results of circuit simulation - the dependence of the feedback voltage on the change in the temperature regime of the device ( T = [-40; 80]

).

).In FIG. 3 shows the results of circuit simulation - the dependence of the amplified feedback voltage on the change in the temperature regime of the device ( T = [-40; 80]

).

), при входном напряжении

и сопротивлении нагрузки

.In FIG. 4 shows the results of circuit modeling - the dependence of the output voltage of the stabilizer on the change in the temperature regime of the device ( T = [-40; 80]

), at input voltage

and load resistance

.

), при входном напряжении

и сопротивлении нагрузки

.In FIG. 5 shows the results of circuit modeling - the dependence of the output voltage of the stabilizer on the change in the temperature regime of the device ( T = [-40; 80]

), at input voltage

and load resistance

.

= [18; 32] В и сопротивлении нагрузки

110 Ом; 200 Ом.In FIG. 6 shows the results of circuit simulation - the dependence of the output voltage of the stabilizer at a temperature of -40 ° C, the input voltage

= [18; 32] V and load resistance

110 ohm; 200 ohm.

= [18; 32] В и сопротивлении нагрузки

110 Ом; 200 Ом.In FIG. 7 shows the results of circuit simulation - the dependence of the output voltage of the stabilizer at a temperature of 25 ° C, the input voltage

= [18; 32] V and load resistance

110 ohm; 200 ohm.

= [18; 32] В и сопротивлении нагрузки

110 Ом; 200 Ом.In FIG. 8 shows the results of circuit simulation - the dependence of the output voltage of the stabilizer at a temperature of 50 ° C, the input voltage

= [18; 32] V and load resistance

110 ohm; 200 ohm.

= [18; 32] В и сопротивлении нагрузки

110 Ом; 200 Ом.In FIG. 9 shows the results of circuit simulation - the dependence of the output voltage of the stabilizer at a temperature of 80 ° C, the input voltage

= [18; 32] V and load resistance

110 ohm; 200 ohm.

Implementation of the invention

A voltage regulator for supplying electronic circuits, comprising: an unstable voltage source 1; field-effect transistors 2, 3 with induced n -channel; zener diode 4 with an avalanche breakdown type; diode 5; resistors 6, 7; load 8, and the potential output of the unstable voltage source 1 is connected to the first terminal of the resistor 6 and the drain of the field-effect transistor 2 with an induced n -channel; the source of the field-effect transistor 2 with an induced n -channel is connected to the cathode of the zener diode 4 and through the load 8 to the common bus of the device; the second terminal of the resistor 6 and the drain of the field-effect transistor 3 with induced n -channel connected to the gate of the field-effect transistor 2 with induced n -channel; the source of the field-effect transistor 3 with induced n -channel is connected to the common bus of the device, and the gate is connected to the cathode of the diode 5 and the first output of the resistor 7, the second output of which is connected to the common bus of the device; the anode of diode 5 is connected to the anode of zener diode 4.

The electronic circuit supply voltage stabilizer works as follows.

Zener diode 4 together with diode 5 and resistor 7 perform a number of functions:

);1) the formation of a feedback voltage, due to the voltage drop across the resistor 7 (

);

2) thermal compensation directly output voltage;

3) thermal compensation voltage feedback.

The performance of the second and third functions is carried out due to the use of thermally dependent elements: a zener diode 4 and a diode 5.

) (см. П. Хоровиц, У. Хилл. «Искусство схемотехники», М.: Мир, 1998 г., с. 351) при обратном включении. А значит, напряжение падения на стабилитроне 4 с увеличением температуры будет возрастать.The zener diode 4 used in the device circuit is a zener diode with an avalanche breakdown type, characterized by a positive temperature coefficient of voltage (

) (see P. Horowitz, W. Hill. "The Art of Circuitry", M .: Mir, 1998, p. 351) with the reverse connection. This means that the voltage drop across the zener diode 4 will increase with increasing temperature.

). А значит, напряжение падения на диоде 5 с увеличением температуры будет уменьшаться.Diode 5 is characterized by a negative voltage temperature coefficient (

). This means that the voltage drop across diode 5 will decrease with increasing temperature.

However, due to the condition

, (1)

, (one)

), являющееся напряжением обратной связи, с увеличением температуры будет уменьшаться (фиг. 2), обеспечивая тем самым термокомпенсацию напряжения обратной связи.voltage drop across resistor 7 (

), which is the feedback voltage, will decrease with increasing temperature (Fig. 2), thereby providing thermal compensation of the feedback voltage.

In addition, the total resistance of the circuit (zener diode 4, diode 5, resistor 7) will decrease with increasing temperature, thereby ensuring the redistribution of the output current of the device and thermal compensation of the direct output voltage.

The field-effect transistor 3 with an induced n -channel together with the resistor 6 perform the main function of amplifying the feedback voltage.

Field-effect transistor 2 with induced n -channel performs the main function - adjustable resistance.

At the same time, the drain current of field-effect transistors 2, 3 used in the stabilizer circuit is characterized by temperature dependence. Which, in turn, provides additional functions:

), фиг. 3;- thermal compensation of the amplified feedback voltage taken from the drain of the field effect transistor 3 (

), Fig. 3;

), фиг. 4.- thermal compensation of the output voltage taken from the source of the field-effect transistor 2 (

), Fig. 4.

The value of the temperature dependence of the drain current of field-effect transistors 2, 3 can be quite significant. At the same time, the degree of "significance" can be significantly reduced by ensuring the operation of field-effect transistors 2, 3 in the mode of finding the operating point in the vicinity of a point with a zero temperature coefficient of displacement (thermostable point) (P. Horowitz, W. Hill. "The Art of Circuitry", M .: BINOM, 2014, p. 130, Fig. 3.13). However, it should be taken into account that the “thermostable mode” is rigidly related to the voltage of the source 1, the voltage at the gates of field-effect transistors 2, 3 and the load resistance 8, which means that under the conditions of using an unstable voltage source 1, the full implementation of the “thermostable mode” is quite problematic.

), при входном напряжении

и сопротивлении нагрузки 8 (

).In FIG. 5 shows the results of circuit simulation - the dependence of the output voltage of the stabilizer on the change in the temperature regime of the device ( T = [0; 80]

), at input voltage

and load resistance 8 (

).

As shown by the simulation results of the proposed voltage stabilizer in comparison with the prototype (table), there is a significant gain, in particular:

, в среднем, в 380 раз, а в интервале минимально вероятного использования [-40; 25]

, в среднем, в 114 раз;- according to the “Voltage Stabilization Coefficient”, in the range of the maximum probable use [25; fifty]

, on average, 380 times, and in the interval of the minimum probable use [-40; 25]

, on average, 114 times;

, в среднем, в 50 раз, а в интервале минимально вероятного использования [-40; 25]

, в среднем, в 24 раза.- according to the “Temperature Coefficient of Voltage”, in the range of the most probable use [25; fifty]

, on average, 50 times, and in the interval of the minimum probable use [-40; 25]

, on average, 24 times.

110 Ом; 200 Ом).As shown by the simulation results (Fig. 6÷9), the achieved parameters are retained in the event of a change in load resistance 8 (

110 ohm; 200 ohms).

Which allows us to conclude that, in general, the proposed device has more functionality in comparison with the prototype.

Claims (1)

A voltage regulator for supplying electronic circuits, comprising: an unstable voltage source; field-effect transistor with induced n -channel; two resistors; load, and the drain of the field-effect transistor with induced n -channel connected to the potential output of an unstable voltage source, the second output of which serves as a common bus device; the source of the field-effect transistor with the induced n -channel through the load is connected to the common bus of the device; the second output of the second resistor is connected to the common bus of the device, characterized in that the second field-effect transistor with an induced n -channel, a zener diode, a diode are introduced into the device, and the first output of the first resistor is connected to the drain of the first field-effect transistor with an induced n -channel and a potential output of an unstable voltage source; the second terminal of the first resistor and the drain of the second FET with induced n -channel connected to the gate of the first FET with induced n -channel; the source of the second field-effect transistor with induced n -channel is connected to the common bus of the device, and the gate is connected to the cathode of the diode and the first terminal of the second resistor; the anode of the diode is connected to the anode of the zener diode, the cathode of which is connected to the source of the first field-effect transistor with an induced n -channel and the first load terminal.

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