RU2748722C1 - Microwave switch - Google Patents

Abstract

FIELD: radio engineering.SUBSTANCE: invention relates to radio engineering, in particular to microwave switches. The switch contains three transmission lines with the same wave impedances, matching means. Four field-effect transistors with a Schottky barrier are additionally introduced into the microwave switch - the first, second, third, fourth, respectively, four resistors - the first, second, third, fourth, respectively, each with a resistance of at least 1 kOhm, while the first, second, third, fourth field-effect transistors with a Schottky barrier are microwave switches, the third and fourth field-effect transistors with a Schottky barrier are each made with a gate electrode width that provides a voltage standing wave ratio at the input of the disconnected switched transmission line no more than 2.0, and which are simultaneously microwave matching circuits disconnected dial-up transmission line. The drain electrodes of the first and second field-effect transistors with a Schottky barrier are connected to a common junction point, their source electrodes are connected to the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier, respectively, the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier are connected to each switched transmission line, respectively, their source electrodes are grounded.EFFECT: invention is aimed at ensuring harmonization by microwave, expanding functionality.1 cl, 6 dwg

Description

The invention relates to microwave electronics, namely to microwave switches on semiconductor devices and can be used for switching the microwave signal between channels when creating modern multichannel devices for various purposes.

Known broadband microstrip microwave switch on pin diodes, connected in series in a microstrip line.

In which, in order to increase the decoupling while reducing the weight and size characteristics, it contains six pin diodes and seven sections of the current-carrying conductor of the microstrip line, the first section being a section of the microstrip line, one end of which is the switch input, and the cathode of the first diode is connected to the other end and the cathode of the second diode, the second, third, fourth and fifth sections are sections of the microstrip line, open at one end, and at the other end ending in contact pads for the diode leads, while the cathode of the third diode and the anode of the fourth diode are connected to the second section, to the third section - the cathode of the fourth diode and the anode of the first diode, to the fourth section - the anode of the second diode and the cathode of the fifth diode, to the fifth section - the anode of the fifth diode and the cathode of the sixth diode, the sixth and seventh sections are segments of the microstrip line, with the first end of the sixth section is the first output of the re switch, and the anode of the third diode is connected to the second end of the sixth section, the first end of the seventh section is the second switch output, and the anode of the sixth diode is connected to the second end of the seventh section [Patent 2339126 RF. Broadband microstrip microwave switch / Kuznetsov Yu.V. et al. // Bul. - 2008 - No. 32 /].

A two-channel microwave switch is known, containing three transmission lines with the same wave impedances, one transmission line is intended for the input of the microwave signal, the other two are for output, a segment of the transmission line, two field-effect transistors with a Schottky barrier, while the drain of the second field-effect transistor is connected to the Schottky barrier with one end of the transmission line segment, the sources of the field-effect transistors with the Schottky barrier are grounded, and a constant control voltage is supplied to the gates from one source.

In which, in order to reduce the voltage standing wave ratio (VSWR) at the input and in the open channels of the microwave switch and reduce microwave losses, a directional coupler in the form of a Lange bridge, a segment of the transmission line and a resistor are additionally introduced into the microwave switch, while both segments of the transmission line are made with a length equal to one eighth of the wavelength, and a characteristic impedance equal to the characteristic impedance of the transmission line at the switch input, the resistance value of the resistor is an order of magnitude higher than the characteristic impedance of the transmission line at the switch input, with the first end of the directional coupler in the form of a Lange bridge at its input connected to the transmission line at the input of the switch, the second end at its output - with the other end of the transmission line segment and simultaneously with the transmission line at the second output of the switch, the third end at its output - with one end of the additional transmission line segment, the other end of which is connected to the line transmission on the first output switch for and simultaneously with the drain of the first field-effect transistor with a Schottky barrier, the fourth end at its output is with one end of the resistor, the other end of which is grounded [Patent 2479079 RF. Two-channel microwave switch / Balyko A.K. et al. // Bul. - 2013 - No. 10].

A microwave switch based on field-effect transistors with a Schottky barrier has a number of advantages over a microwave switch based on p-i-n diodes:

- lower control current,

- large microwave interchange.

However, both microwave switches do not provide proper microwave matching in a closed channel.

Known microwave switch (microwave switch) with high isolation, containing at least two input transmission lines connected to a common output transmission line at a common connection point, each input line has an input matching and bias circuit, and the output of the input matching and bias circuit connected to the input of the corresponding amplifying means, equipped with one gate field-effect transistor, while the field-effect transistor is configured to supply it with an "open" bias to provide a high gain or "turn-off" to provide isolation, the output of the field-effect transistor is connected to the input of the output matching circuit, and the output of the output matching circuit is connected to a common junction point.

In which, in order to reduce the loss of the microwave signal in a closed input transmission line and ensure high isolation by eliminating the transmission line between the output matching circuit and the input and output junction point, a "cut-off" bias is applied to the field-effect transistor by shifting the field-effect transistor to the cutoff state, and the output each output matching circuit is connected to a common connection point through a transmission line segment equal to zero or a multiple of the half-wavelengths of the transmitted microwave signal [Patent 2181928 RF High isolation switch / FLINN Stephen John GB) // Bul. - 2002 - No. 12 /].

This microwave switch provides high isolation and microwave matching in an open channel.

However, it differs in the absence of microwave matching in a closed channel, in a rather complex design due to the presence of a microwave power amplifier and, accordingly, in rather high weight and size characteristics.

The technical result of the claimed microwave switch is to provide microwave matching in all states - operating modes, expanding functionality, simplifying the design and reducing the weight and size characteristics while maintaining high electrical characteristics.

The specified technical result is achieved by the claimed microwave switch containing at least three transmission lines with the same wave impedances intended for the input and output of the microwave signal, while one transmission line is common, the other two are switched transmission lines, each switched transmission line has microwave matching circuit, with the transmission lines connected at a common connection point.

In which

three transmission lines are used in two functional variants: in the first - a common transmission line - as an output, switched transmission lines - as inputs, in the second - a common transmission line - as an input, switched transmission lines - as outputs,

at least four field-effect transistors with a Schottky barrier are additionally introduced into the microwave switch - the first, second, third, fourth, respectively, four resistors - the first, second, third, fourth, respectively, each with a resistance of at least 1 kOhm,

wherein

the first, second, third, fourth field-effect transistors with a Schottky barrier are microwave switches,

the third and fourth field-effect transistors with a Schottky barrier are each made with a gate electrode width that provides a voltage standing wave ratio at the input of the disconnected switched transmission line of not more than 2.0 and which are simultaneously microwave matching circuits of the disconnected switched transmission line,

in this case, the drain electrodes of the first and second field-effect transistors with a Schottky barrier are connected to a common junction point, their source electrodes are connected to the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier, respectively,

the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier are connected to each switched transmission line, respectively, their source electrodes are grounded,

to the gates of the first, second, third, fourth field-effect transistors with a Schottky barrier through appropriate resistors and from the corresponding sources of constant control voltage through the contact pads, a corresponding constant control voltage is applied, which ensures the opening of the first and fourth and - closing of the second and third field-effect transistors with the Schottky barrier, or providing the closure of the first and fourth and -opening the second and third field-effect transistors with a Schottky barrier.

The width of the gate electrode of the third and fourth, as well as the value of the corresponding applied constant control voltage to the first, second, third, fourth field-effect transistors with a Schottky barrier are determined by the design and electrical parameters of each field-effect transistor with a Schottky barrier.

Disclosure of the essence.

The set of essential features and each separately of the claimed microwave switch provide, namely.

The use of three transmission lines in two functional variants: in the first - a common transmission line - as an output, switched transmission lines - as inputs, in the second - a common transmission line - as an input, switched transmission lines - as outputs, provides an expansion of functionality.

Introducing into the microwave switch additionally at least four field-effect transistors with a Schottky barrier - the first, second, third, fourth, respectively, and four resistors - the first, second, third, fourth, respectively, each with a resistance of at least 1 kOhm, while when:

the first, second, third, fourth field-effect transistors with a Schottky barrier are microwave switches,

the third and fourth field-effect transistors with a Schottky barrier are each made with a gate electrode width providing a voltage standing wave ratio at the input of the disconnected switched transmission line of not more than 2.0, and which are simultaneously microwave matching circuits of the disconnected switched transmission line.

And the proposed connection of microwave switch elements when:

the drain electrodes of the first and second field-effect transistors with a Schottky barrier are connected to a common junction point, their source electrodes are connected to the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier, respectively,

the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier are connected to each switched transmission line, respectively, their source electrodes are grounded.

And the supply of a constant control voltage to the gates of the first, second, third, fourth field-effect transistors with a Schottky barrier:

a) through the corresponding resistors, the first, second, third, fourth,

b) from appropriate sources of constant control voltage by means of contact pads and the corresponding value of constant control voltage determined by the structural and electrical parameters of the field-effect transistor with a Schottky barrier, ensuring the opening of the first and fourth and - closing of the second and third field-effect transistors with the Schottky barrier, or - closing of the first and fourth and - opening the second and third field-effect transistors with a Schottky barrier.

And as a consequence of this:

firstly, the provision of microwave matching in all states of the microwave switch (the voltage standing wave ratio at the input of the disconnected switched transmission line is ensured and equal to no more than 2.0),

secondly, a simplification of the design and a decrease in weight and size characteristics, due to the exclusion of the microwave power amplifier from the design.

While maintaining high electrical characteristics, primarily microwave losses and microwave decoupling.

Implementation of each resistor with a resistance of less than 1 kOhm is not desirable, since it leads to an increase in microwave losses.

The implementation of every third and fourth field-effect transistors with a Schottky barrier with a gate electrode width providing a voltage standing wave ratio at the input of a disconnected switched transmission line of more than 2.0 is not permissible, due to an unacceptable deterioration of the microwave matching at the input of a disconnected switched transmission line.

So, the declared microwave switch fully provides the claimed technical result - ensuring the harmonization of microwave frequencies in all states - operating modes, expanding functionality, simplifying the design and reducing the weight and size characteristics while maintaining high electrical characteristics.

The invention is illustrated by drawings.

FIG. 1 shows the topology of the declared microwave switch, where

- three transmission lines, while one transmission line is common - 1, the other two - switched transmission lines - 2, 3, respectively.

- microwave matching circuits - 4, 5, respectively,

- common point of connection - 6,

- four field-effect transistors with a Schottky barrier - 7, 8, 9, 10, respectively,

- four resistors - 11, 12, 13, 14, respectively,

- contact pads 15, 16 for connection to the corresponding sources of constant control voltage.

FIG. 2 is a schematic diagram of the microwave switch.

FIG. 3, 4, 5, 6, the dependences on the frequency of the microwave signal are given for two functional use cases: in the first - a common transmission line - as an output, switched transmission lines - as inputs (Fig. 3, 4), in the second - a common transmission line - as input, switched transmission lines - as outputs (Fig. 5, 6), namely

microwave losses (Fig. 3, 5 curve 1, respectively),

microwave decoupling (Fig. 3, 5 curve 2, respectively),

return loss microwave on common 1 and switched transmission lines 2, 3 (Fig. 4, 6, curves 1, 2, 3, respectively).

The operation of the microwave switch as in the case of using the first functional option, when the common transmission line 1 is used as an output, switched transmission lines 2, 3 - both inputs, and in the case of using the second functional option, when the common transmission line 1 is used as an input, switched lines gears 2, 3 - as outputs.

A constant control voltage of 0 V is supplied to the gates of the field-effect transistors with a Schottky barrier 7, 8, 9, 10 through the corresponding resistors 11, 12, 13, 14 from the corresponding sources of constant control voltage (GWInstek PST-3201) through the corresponding contact pads 15, 16 and -5 V, providing the opening of the first 7 and fourth 10 and - closing the second 8 and third 9 field-effect transistors with a Schottky barrier, which ensures the passage of the microwave signal from the common transmission line 1 to the switched transmission line 2, decoupling over the microwave between the common transmission line 1 and switched transmission line 3 and provides matching on the microwave switched transmission line 3, or a constant control voltage of -5 V and 0 V is supplied, which ensures the closing of the first 7 and fourth 10 and - opening of the second 8 and third 9 field-effect transistors with a Schottky barrier, which ensures the passage microwave signal from a common transmission line 1 to a switched transmission line 3, microwave isolation between a common transmission line dachi 1 and switched transmission line 2 and provides coordination over microwave switched transmission line 2.

An example of a specific implementation of the claimed microwave switch.

All elements of the microwave switch are made in a monolithic integral design on a semiconductor substrate made of gallium arsenide with a thickness of 100 microns using thin-film technology.

Four field-effect transistors with a Schottky barrier - the first 7, the second 8, the third 9, the fourth 10 are made with a gate electrode width of 102, 102, 40, 40 microns, respectively, four resistors - the first 11, the second 12, the third 13, the fourth 14, each with resistance 8 kOhm,

wherein

the first 7, the second 8, the third 9, the fourth 10 field-effect transistors with a Schottky barrier are microwave switches,

the third 9 and the fourth 10 field-effect transistors with a Schottky barrier are each made with a gate electrode width of 40 microns, providing a voltage standing wave ratio at the input of switched transmission lines 2, 3 in the off mode equal to 2.0 and, which are simultaneously microwave matching circuits 4 , five.

Wherein

the drain electrodes of the first 7 and second 8 field-effect transistors with a Schottky barrier are connected to a common junction point 6, their source electrodes are connected to the drain electrodes of the third 9 and fourth 10 field-effect transistors with a Schottky barrier, respectively,

drain electrodes of the third 9 and fourth 10 field-effect transistors with a Schottky barrier are connected to each switched transmission line 2, 3, respectively, their source electrodes are grounded.

A constant control voltage of 0 V is supplied to the gates of the field-effect transistors with a Schottky barrier 7, 8, 9, 10 through the corresponding resistors 11, 12, 13, 14 from the corresponding sources of constant control voltage (GWInstek PST-3201) through the corresponding contact pads 15, 16 and -5 V, providing the opening of the first 7 and fourth 10 and - closing the second 8 and third 9 field-effect transistors with a Schottky barrier, or a constant control voltage of -5 V and 0 V is supplied, ensuring the closure of the first 7 and fourth 10 and - opening of the second 8 and the third one is 9 field-effect transistors with a Schottky barrier, which ensures the passage of the microwave signal from the common transmission line 1 to the switched transmission line 3, the microwave isolation between the common transmission line 1 and the switched transmission line 2, and provides matching on the microwave switched transmission line 2.

The manufactured sample of the microwave switch is used as in the first functional version, when the common transmission line 1 is as an output, the switched transmission lines 2, 3 are both inputs and in the second, when the common transmission line 1 is as an input, the switched transmission lines 2, 3 - as outputs.

On the manufactured sample of the microwave switch for each functional use case, the values of microwave losses, microwave decoupling, return microwave losses on common 1 and switched transmission lines 2, 3 were measured when a microwave signal was applied in the frequency range 0.05-4 GHz.

The results are depicted.

For the first functional use case in FIG. 3, 4, where the following are given: dependences of microwave losses (Fig. 3 curve 1), microwave decoupling (Fig. 3 curve 2), return microwave losses on the common and switched transmission lines (Fig. 4 curve 1, 2, 3, respectively) ...

For the second functional use in FIG. 5, 6, where the following are given: dependences of microwave losses (Fig. 5 curve 1), microwave decoupling (Fig. 5 curve 2), return microwave losses on common and switched transmission lines (Fig. 6 curve 1, 2, 3, respectively) ...

As seen in FIG. 3, 4, 5, 6, a sample of a microwave switch in the frequency range 0.05-4 GHz in both the first and second functional use cases has:

microwave isolation not less than 40.0 dB,

microwave losses no more than 1.0 dB,

return loss on microwave of a closed switched line is not less than 10.0 dB, this corresponds to a voltage standing wave ratio of not more than 2.0 (determined by a mathematical method).

Thus, the declared microwave switch, in comparison with the prototype, will provide:

- matching by microwave in all states (modes of operation),

- simplification of design and reduction of weight and size characteristics,

- expansion of functionality.

While maintaining high electrical characteristics - microwave decoupling of the order of 40.0 dB, microwave losses no more than 1.0 dB.

Claims (10)

1. A microwave switch containing at least three transmission lines with the same wave impedances intended for input and output of a microwave signal, while one transmission line is common, the other two are switched transmission lines, each switched transmission line has a matching circuit along Microwave transmission lines are connected at a common connection point, characterized in that three transmission lines are used in two functional variants: in the first - a common transmission line - as an output, switched transmission lines - as inputs, in the second - a common transmission line - as an input, switched transmission lines - as outputs, at least four field-effect transistors with a Schottky barrier are additionally introduced into the microwave switch - the first, second, third, fourth, respectively, four resistors - the first, second, third, fourth, respectively, each with a resistance of at least 1 kOhm, wherein the first, second, third, fourth field-effect transistors with a Schottky barrier are microwave switches, the third and fourth field-effect transistors with a Schottky barrier are each made with a gate electrode width that provides a voltage standing wave ratio at the input of a disconnected switched transmission line of not more than 2.0, and which are simultaneously microwave matching circuits for a disconnected switched transmission line, in this case, the drain electrodes of the first and second field-effect transistors with a Schottky barrier are connected to a common junction point, their source electrodes are connected to the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier, respectively, the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier are connected to each switched transmission line, respectively, their source electrodes are grounded, to the gates of the first, second, third, fourth field-effect transistors with the Schottky barrier through the corresponding resistors and from the corresponding sources of constant control voltage through the contact pads, a corresponding constant control voltage is applied, which ensures the opening of the first and fourth and closure of the second and third field-effect transistors with the Schottky barrier or providing closing the first and fourth and opening the second and third field-effect transistors with a Schottky barrier. 2. The microwave switch according to claim 1, characterized in that the width of the gate electrode of the third and fourth, as well as the value of the corresponding applied constant control voltage to the first, second, third, fourth field-effect transistors with a Schottky barrier is determined by the design and electrical parameters of each field-effect transistor with a Schottky barrier.

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