RU2626195C1 - Method of effective implementation of hyperconductivity and heat conductivity - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: nondegenerate or weakly degenerate semiconductor material is used, electrodes 1 and 2 forming rectifying contacts with the material, such as metal-semiconductor contacts, Schottky contacts are placed on its surface or in its volume. The distance between the electrodes D is chosen to be no more than 4Λ, D≤4Λ, where Λ is the coherence length; the size of the electrode contact area with material a is chosen not more than a quarter of the length of the elastic wave in the material a≤λ/4, λ=V/F, where V is the velocity of the elastic wave in the material with a frequency F = 10⁸ Hz; an aligned electromagnetic coupling of the material part is established and maintained, the part is adjacent to the electrode 1 and/or adjacent to the electrode 2 or a material or a part of the material is located between the electrodes 1 and 2 with high frequency (HF) and (or) super high-frequency (SHF) decelerating device such as a coaxial line, a waveguide line, a strip line, a resonator, an oscillatory circuit that are characterized by resonance frequencies f in the range 10⁶ Hz to 3⋅10¹⁵ Hz and figures of merit Q≥10; the material is heated to a T temperature equal or higher than the temperature of the hyperconducting transition T_h, T_h≤T≤T^*; the electrical and/or thermal resistance of the material between the electrodes and (or) the Meissner effect is measured; as a result, the electrical resistance and the thermal resistance of the material between the electrodes go to zero, that is, the hyperconductivity and superconductivity in the material between the electrodes 1 and 2 are realized, and the Meissner effect is enhanced.

EFFECT: ensuring the possibility of efficiency increase.

21 cl, 47 dwg

Description

FIELD OF THE INVENTION

The invention relates to electricity, to the electrophysics and thermal conductivity of materials, to the phenomenon of zero electrical resistance, that is, to hyperconductivity, and also to the phenomenon of zero thermal resistance, that is, to superconductivity of materials at room and higher temperatures.

Hyperconductivity is a state of material with zero electrical resistance. Such a state, a state of hyperconductivity or a hyperconducting state arises and exists in semiconductor materials containing electron-vibrational centers (ECCs) between the electrodes at hyperconducting transition temperatures (T _h ) and at higher temperatures [1-16]. Materials in which hyperconductivity and superconductivity are observed when they are heated above the temperature T _h are hyperconductors or hyperconducting materials.

Super thermal conductivity is a state of material with zero thermal resistance. Such a state, a state of superconductivity or a superconducting state arises and exists in semiconductor materials containing ECC between the electrodes at the temperature of the hyperconducting transition T _h and at higher temperatures.

Electron-vibrational centers or ECCs are such local centers, the equilibrium positions or frequencies of elastic vibrations of which depend on their electronic state in materials [17-20]. In [20], “On the effect of lattice deformation by electrons on the optical and electrical properties of crystals,” on page 207, in paragraph 3, the definition of electron-vibrational transitions of the local center is given:

"3. Phototransitions of electrons ¹⁰

. При этом переходе изменяются не только квантовые числа электронов s, но и квантовые числа колебаний n_χ т.е. выделяется теплота. Частота света, поглощаемого при таком переходе, равнаIn this section, we will consider photo-transitions of weakly coupled electrons of the local "center" from a discrete to a discrete energy level. Consider the transition from the state s ₁ ... n _χ ... to the state

. In this transition, not only the quantum numbers of electrons s, but also the quantum numbers of vibrations n _χ change, i.e. heat is released. The frequency of light absorbed during this transition is

.where ω ₀ is the frequency absorbed by the "purely electronic transition" at which

.

The phototransition probability is calculated using ordinary quantum-mechanical consideration ¹⁰ .

The energy of the light absorbed by the aforementioned electronic-vibrational transition per second per unit volume of the dielectric can be written in the form ... "

In this extract from the indicated work S.I. Baker defined electron-vibrational transitions of local centers. Local centers in which electron-vibrational transitions occur, i.e. centers of electron-vibrational nature are called electron-vibrational centers or ECC.

Electronic or hole transitions to or from ECC energy levels are associated with the inevitable participation of a significant number of quanta of elastic vibrations of a material, which is why they are called electron-vibrational transitions. The average number of phonons involved in such transitions is numerically equal to the electron-phonon coupling constant of Pecar-Juan-Riesz (S). The electron – phonon interaction constant at an ECC usually significantly exceeds 1 and, according to theoretical data, can reach 150. The experimental values of S = 22 are known in a wide-gap material and in a dielectric. In typical semiconductors, the S value is usually several units. So, in silicon at A centers, which are associations of impurity oxygen atoms with vacancies, the constant S is close to 5, although in the absence of an ECC in the material, S≤0.25. It is known that the elastic interaction of the ECC with each other causes a decrease in S. Owing to the participation of phonons in electron-vibrational transitions and their interaction with the movements of atomic nuclei in materials, fundamentally new technical effects, previously considered impossible, were discovered, such as vibrations of atomic nuclei in material atoms, microwave radiation during electron-vibrational transitions, electron drag by phonons at Debye temperatures of phonons, as well as hyperconductivity and super thermal conductivity.

Hyperconductivity and super thermal conductivity are practically realized in wide-gap materials and in narrow-gap materials. The impurity oxygen atoms in materials are practically important for the realization of hyperconductivity and super thermal conductivity since oxygen is contained in the Earth's crust (28%) and is present in semiconductor materials. So in industrial silicon, the concentration of impurity oxygen atoms can be close to 10 ¹⁸ cm ^-3 and does not lend itself to a significant decrease with modern cleaning methods. A part of the impurity oxygen atoms in the material is converted into an ECC without alloying the material with other impurities to create an ECC. Such ECCs are used to realize hyperconductivity and super thermal conductivity.

Hyperconductivity and super thermal conductivity are mutually related states of materials and cannot be carried out separately, separately from each other. This is due to the fact that, in the presence of electron-vibrational centers in the material, the electrons and phonons are strongly connected to each other at the electron-vibrational energy levels of the ECC. Under such conditions, electrons and phonons jointly carry out transitions, which are called electron-vibrational transitions. Among these transitions, there are electron-vibrational transitions from the energy levels of one ECC to the energy levels of another ECC, for example, in the presence of an ECC concentration gradient or gradient of electric potential, electric field or temperature gradient. Such electron-vibrational transitions are quantum transitions, they are accompanied by a spatial transfer of electric charges of electrons and holes in the material, as well as a spatial transfer of phonons associated with electrons and holes and intrinsic (Inherent, I-) vibrations of atomic nuclei in the atoms of the material, which causes the appearance and the existence of hyperconductivity and super thermal conductivity.

Natural (Inherent, I-) vibrations are elastic periodic vibrational displacements of atomic nuclei relative to the electron shells of atoms or ions of a material, that is, I-vibrations are vibrational motions of atomic nuclei in potential fields of the electron shells of atoms or ions of a material.

Waves of I-vibrations are also known, which are the spatial distribution of I-vibrations in a material, due to which kinetic effects in materials acquire important features.

Electrons, holes, phonons, I-oscillations are mutually connected with each other at the ECC through strong electron-phonon interaction. In this case, the system of atomic nuclei exchanges energy with the system of electrons in the material. Such energy exchange in materials contradicts the Born – Oppenheimer adiabatic approximation [21] which underlies the currently dominant adiabatic electronics of materials.

Indeed, the theoretical basis of modern solid-state electronics is the quantum Schrödinger equation for a crystal, including the operators of the kinetic energy of electrons (T _e ), the kinetic energy of atomic nuclei (T _z ), the operators of potential energies of the Coulomb repulsion of electrons (V _ee ), Coulomb repulsion of nuclei (V _zz ) and Coulomb attraction of electrons to nuclei (V _ez ):

where W is the total energy of the crystal. The solution to this equation is the wave function Ψ (ℜ, r), which depends on the set of coordinates of atomic nuclei (ℜ) and on the set of coordinates of electrons (r). It is known that the exact solution of equation (1) is difficult for fundamental and technical reasons.

In 1926, M. Born and P. Oppenheimer proposed an approximate method for solving equation (1) by setting Ψ (ℜ, r) = ϕ (r, ℜ) ⋅ Ф (ℜ) and presented it in the form of the following two equations:

where the crystalline potential V _cr = V _cr (ℜ, r) = V _ee + V _zz + V _ze ; ϕ (r, ℜ) is the wave function describing the motion of a system of electrons; E is the total energy of the electron system; Φ (ℜ) is the wave function describing the motion of a system of atomic nuclei, E is the energy of an electron system,

is the adiabatic potential, j is the number of the atom in the material, and Ω is the volume of the material. Essentially, the potential A is determined by the dependence of the electronic wave function ϕ (r, ℜ) on the displacements of atomic nuclei. M. Born and P. Oppenheimer [21] excluded potential A from equation (3), considering its contribution to the energy of the material to be insignificant. This approximate method for solving equation (1) using equations (2) and (3) under condition A≡0 is called the Born-Oppenheimer adiabatic approximation, since under this condition the electron system was represented by an adiabatic shell separated from the nucleus system, preventing the energy exchange between by these systems. It was believed that in this approximation the exchange of energy between electrons and atomic nuclei in materials is impossible. Obviously, the adiabatic approximation, the adiabatic Born-Oppenheimer principle is an approximate way to solve the Schrödinger equation for the material and, as it turned out, the use of the adiabatic Born-Oppenheimer approximation limits the range of physical processes available for research and use in materials.

In 1930, the Nobel laureate, one of the founders of wave quantum mechanics and the creators of its mathematical apparatus, P. Dirac showed for the first time that the adiabatic Born – Oppenheimer approximation in the general case cannot be substantiated [22]. Nevertheless, the Born-Oppenheimer approximation is widespread and now it underlies the electronic theory of materials, the basis of the dominant modern electronics. In this regard, the solid state electronics, including semiconductor electronics, existing now in science and technology, can reasonably be called adiabatic electronics, Born-Oppenheimer electronics. Due to its approximate nature, this electronics does not provide an exhaustive answer to many questions about the nature of materials and physical phenomena in them, for example, superconductivity, superfluidity, hyperconductivity, superconductivity, electron drag by phonons at Debye temperature of phonons, partly due to the limited adiabatic Born approximation -Oppenheimer. Further studies strengthened the understanding of the limitations of the adiabatic approximation when used in solving problems of materials in general and problems of solid-state electronics in particular.

It has been established that even in the adiabatic Born-Oppenheimer approximation, when the potential is А≡0 and therefore the energy exchange between the holes and the electrons of the local centers is supposedly absent, nevertheless, such an energy exchange does occur. The energy exchange between the system of electrons and the system of atomic nuclei in materials occurs constantly, since the crystalline potential V _kp in equation (2) depends on both the set of coordinates of the nuclei (ℜ) and the set of coordinates of electrons (r), which is why the solutions of equations (2, 3) and their eigenvalues, generally speaking, depend on the sets of coordinates ℜ and r. Thus, the adiabatic Born-Oppenheimer approximation turned out to be adiabatic only conditionally, approximately. The reality is that the energy exchange between a system of electrons and a system of atomic nuclei is a fundamental and integral property of materials: molecules, liquids, solids. However, the vibrations of nuclei in the atoms of materials, their interaction with electrons and phonons have hardly been studied since the foundation of quantum material science, i.e. last hundred years. In connection with these data, it should be noted that the concepts of Cooper pairs that have been established in physics and the Bardin-Cooper-Schriffer (BCS) theory of superconductivity use the exchange of energy between electrons, use the exchange of electrons by phonons, which are elastic vibrations of atoms of the crystal lattice, vibrations of atoms or ions material. In other words, the theory of Cooper pairs and the theory of BCS superconductivity associated with it, in principle, use the energy exchange between a system of electrons and a system of atoms (ions) in a material. This corresponds to the adiabatic Born-Oppenheimer approximation, since atoms and ions in these theories are regarded as material points. In this approximation, neither independent displacements of atomic nuclei nor energy exchange between electrons and nuclei are assumed, despite the fact that the movements of atomic nuclei and electron motions are represented in the Schrödinger equation for material (1) by separate, independent from each other kinetic energy operators.

The claimed invention relates to a new developing non-adiabatic electronics. In contrast to the existing traditional and currently dominant adiabatic electronics of Born-Oppenheimer, non-adiabatic electronics enhance the energy exchange between atomic nuclei, phonons, and electrons in materials by means of ECC and use this energy exchange for scientific and technical applications.

Thus, non-adiabatic electronics represents a new scientific and technical direction based on the inevitable but not taken into account earlier energy exchange between electrons and atomic nuclei in molecules, gases, liquids, in condensed materials and material structures. Particularly intense and bright effects of non-adiabatic electronics are manifested in semiconductor materials and structures in the form of intrinsic (I-, Inherent) α-, β- and γ-types of nuclear vibrations inside material atoms; in the form of deep electron-vibrational levels in the energy gap of semiconductors (and dielectrics); in the processes of generation, amplification, detection and conversion of frequencies of microwave oscillations and waves at the ECC; in the form of electron drag by phonons at Debye temperatures of phonons; in the form of phenomena of hyperconductivity and superconductivity, as well as in the form of negative electrical resistance; in the phenomenon of electrical control of heat fluxes; in optical, electrical and magnetic methods for regulating the optical properties of materials; the ability to create uncooled low-noise solid-state electronic and otoelectronic devices and devices.

The discovery of I-vibrations and waves in materials increased the number of physically important degrees of freedom for the particles forming the material; increased the number of energy exchange channels, i.e. interactions between particles of material. New interactions manifest themselves in the form of fundamentally new technical effects and in the form of new features of known effects.

Under certain conditions, in limited areas of the material, I-vibrations and waves become coherent, that is, they acquire the same frequencies and phases of vibrations. Such regions of the material with the same phases of elastic vibrations are called coherent regions. The coherence of elastic vibrations is a condition of zero electrical resistance and zero thermal resistance of a material in coherent regions, that is, the coherence of I-vibrations and associated phonons is a condition of hyperconductivity and superconductivity of coherent regions of a material. The geometric dimensions of coherent regions can range from tens of angstroms to tens and hundreds of microns under various technical conditions. If the coherent region occupies all the material along the length between the electrodes, then the electric and thermal resistances of the material between the electrodes become zero, thereby realizing the superconductivity and super-thermal conductivity of the material between the electrodes.

The transition of the material to the hyperconducting state occurs when it is heated to the temperature of the hyperconducting transition T _h or to higher temperatures and is a phenomenon of hyperconductivity, the technical effect of hyperconductivity. The state of hyperconductivity of the material is accompanied by a state of superconductivity. The phenomenon of transition of a material to a state with zero thermal resistance, to a state of superconductivity is a technical effect of superconductivity. Phenomena, effects of hyperconductivity and superconductivity occur near the temperature of the hyperconducting transition T _h and exist at higher temperatures. Hyperconductivity and super thermal conductivity are mutually related technical effects, they cannot be separated from each other, arise and exist together, can be implemented and practically used at temperatures above T _h .

This invention provides an increase in the efficiency of the known method of hyperconductivity and super thermal conductivity [16]. The claimed method implements a technical mechanism for the formation of zero electrical resistance and zero thermal resistance of materials between the electrodes, that is, hyperconductivity and superconductivity at near-room and higher temperatures due to the use of electron-vibration centers and characteristic for ECC strong electron-phonon interaction in conditions of output from the material excess vibrational energy.

The invention can be used in nanoelectronics, microelectronics, radio engineering, electrical engineering and radio electronics.

State of the art

The transition of materials to a state with zero electrical resistance at low temperatures is known as the phenomenon of superconductivity discovered in 1911 [23]. In FIG. Figure 1 shows a typical temperature dependence of the electrical resistance (R) of a superconducting material. From FIG. 1 it can be seen that its electrical resistance R vanishes when the material is cooled below the superconducting transition temperature (T _s ). Superconductivity is observed only in some materials and only under certain conditions, namely, if the material temperature is lower than the superconducting transition temperature, and the electric current density and magnetic field strength in the material are below the critical values of J _к and Н _к [24-26]. The presence of critical values of T _c , J _k and H _k limits the technical applications of superconductivity near room temperature and at higher temperatures, since the values of J _k and H _k depend on the temperature of the material and tend to zero as the temperature rises and approaches T _c .

The first superconductors had small values of T _c : 4.1 K (mercury), 7.3 K (lead). In 1967, superconductivity was discovered in an alloy of niobium, aluminum, and germanium compounds with T _c ≅20K. In 1986, J.G. Bednorets and K.A.Z. Müller discovered a class of metal oxides with T _c ≅40K [27] in connection with which he was awarded the Nobel Prize. Later, many classes of high-temperature superconductors were discovered, and the maximum temperature of the superconducting transition reached 133K-134K. A superconducting transition was detected in the HgBa ₂ Ca ₂ Cu ₃ O ₈ compound under pressure of tens of Gigapascals at temperatures from 156K to 164K. Superconductivity was detected at temperatures of about 200 K in the SrRuO ₃ compound subjected to laser treatment [28]. The material (Sn ₅ In) Ba ₄ Ca ₂ Cu ₁₀ O _Y obtained in [29] exhibits superconductivity at temperatures up to T _c = 212 K, presumably up to T _c = 250 K.

It should be noted that superconductivity in all classes of superconducting materials was discovered experimentally, without a theoretical prediction, practically “blindly”, and the dominant ideas about superconductivity are often based on the inappropriate Born-Oppenheimer adiabatic approximation. Experimental searches for superconducting materials with high values of T _c are still ongoing. This important task has been solved for more than a hundred years by selecting the chemical composition and technological processing of materials, that is, as before, by a "blind search", reminiscent of medieval alchemy, of new superconducting materials with high values of T _c . It is considered certain and certain that at a temperature less than T _{c the} superconducting material may be superconducting, may have zero electrical resistance. Expectations of superconductivity precisely at a temperature T <T _{c are} traditionally based on available empirical data. Known physical models of the phenomenon of superconductivity are also oriented towards the existence of a superconducting state of a material at a temperature lower than T _c .

A complete theory of superconductors has not yet been created, but several physical mechanisms have been put forward to explain the phenomenon of superconductivity. Among these mechanisms, the dominant position is occupied by the phonon mechanism, which explains the pairwise attraction of conduction electrons due to the exchange of electrons with each other by virtual crystalline phonons, accompanied by the formation of “electron pairs”, the so-called “Cooper pairs” or “Cooper electron pairs”. The binding energy of electrons in the "electron pair" determines the value of T _c . This mechanism underlies the well-known theory of superconductivity by J. Bardin, N. Cooper, J. Shriffer (BCS) [30], in which the temperature of the superconducting transition T _c depends on the energy of the elastic vibrations of the material associated with electrons (E _count ):

where k is the Boltzmann constant, V * is the binding energy of the elastic vibration of the material with the electron, N (F) is the density of electronic states at the Fermi energy, F is the Fermi energy. For example, in superconducting metals V * N (F) << 1, E _count ≤17 meV and therefore T _c does not exceed 20K. It seemed that the BCS theory did not explain the experimentally observed high experimental values of T _c . This gave reason to believe that this theory is true only for low-temperature superconductors.

However, based on the BCS theory [30] in Refs [31, 32], a fundamental possibility was formulated of increasing the temperature of the superconducting transition (T _c ) by using phonons with high energies. These works, in principle, explain the high values of T _{c that are} practically observed during the implementation of the technical effects of hyperconductivity and superconductivity, in which I-vibrations of nuclei in atoms of materials containing electron-vibrational centers (ECCs) are used, the quanta of elastic vibrations of which are many times higher than the energies of optical and acoustic phonons. That is why hyperconductivity and super thermal conductivity are carried out in materials containing ECC.

To increase T _{c, it was} previously proposed to use more energetic phonons in Cooper pairs, with higher energies, with wave vectors penetrating several Brillouin zones (Larkin A.I.). However, this proposal has not been technically implemented.

B.D. Josephson discovered two technical effects [33] which were experimentally confirmed, awarded by the Nobel Prizes and manifested in structures consisting of two superconductors separated by a tunnel with a thin dielectric layer, namely, the stationary Josephson effect and the non-stationary high-frequency Josephson effect.

The stationary Josephson effect manifests itself in the form of a constant electric current (I ₀ ) flowing through a thin tunnel of dielectric separating superconductors, even if no voltage is applied between the superconductors. This current was explained by the tunneling of Cooper pairs of electrons through a dielectric. The magnitude and direction of the tunneling current through a dielectric layer with a thickness of the order of a dozen angstroms depends on the phase difference of the oscillations of Cooper pairs in superconductors. In FIG. Figure 2 shows the current-voltage characteristic of the Josephson tunnel junction of two identical superconductors from [24]. From FIG. 2 it can be seen that at zero voltage between the superconductors a direct current I ₀ flows through the dielectric layer, which represents the stationary Josephson effect.

The non-stationary high-frequency Josephson effect manifests itself in the form of an alternating electric current flowing through a tunnel thin layer of dielectric separating superconductors if a constant voltage of magnitude V is applied between the superconductors. The cyclic frequency of this alternating current

. Частота ω/2π обычно соответствует СВЧ диапазону.where e is the electron charge. The energy quantum of such vibrations

. The frequency ω / 2π usually corresponds to the microwave range.

In superconductors, the Meissner effect [24] acts in that a material in a superconducting state, in a state with zero electrical resistance, pushes an external magnetic field out of its volume. In this case, significant mechanical forces arise and act as a repulsive material and magnet. The Meissner effect is practically used in magnetic suspension devices in which superconducting materials are cooled to temperatures below T _c , which is technically inconvenient and costly.

In non-degenerate and weakly degenerate semiconductors and semiconductor ECC-containing structures, that is, in hyperconductors, coherence regions with a characteristic size Λ (with coherence length Λ) from tens of angstroms to tens of microns that have zero electrical (and zero thermal) resistance spontaneously arise and exist . Due to the zero resistance of coherent regions, hyperconductors and hyperconducting structures push an external magnetic field out of their volume, exhibiting the action of the Meissner effect. That is, the Meissner effect is characteristic of both superconductors and hyperconductors due to the zero electrical resistance of the coherent regions existing in them.

The Meissner effect in hyperconductors manifests itself practically at temperatures of the spontaneous formation of coherent regions and increases with an increase in the volume of coherent regions in the material, for example, with an increase in the temperature of the material. The Meissner effect manifests itself in the material between the electrodes at temperatures below the temperature of the hyperconducting transition T _h , at temperatures T _h and above T _h . Thus, the Meissner technical effect and its technical applications are quite feasible with the help of hyperconductors at low, near-room and higher temperatures. To enhance the Meissner effect in hyperconductors, it is advisable to increase the total volume of coherent regions, for example, by increasing their number, characteristic size, i.e. the coherence length Λ, for example, using the technical means proposed in the claimed invention.

The Meissner effect manifests itself in the form of a force pushing a material with zero electrical resistance from a magnetic field, i.e. The Meissner effect is characterized by a force vector: a vector module representing the magnitude of the effect, and the direction of the force vector. A change in the Meissner effect consists of a change in the magnitude (modulus) of the force and a change in the direction of this force.

Until 2000, the implementation of zero electrical resistance of the material at room temperature and higher temperatures was an unresolved scientific and technical problem. Moreover, the very possibility of superconductivity at room temperature, and even more so, above room temperature, has not been proved. The lack of such an opportunity has not been proven. It has now been established that under certain conditions in semiconductor materials between the electrodes there is a state with zero electrical resistance at near-room and higher temperatures, called hyperconductivity, accompanied by the appearance of zero thermal resistance of the material, called superconductivity.

The experimental implementation of hyperconductivity and superconductivity became possible as a result of the discovery and study of a new type of elastic vibrations and waves in materials, Inherent, I-vibrations and waves [1, 4, 7-15, 34-38]. I-vibrations and waves are elastic vibrations of nuclei in atoms of materials. It turned out that I-vibrations and waves effectively interact with electrons, holes, and phonons, thereby providing a strong electron-phonon interaction, a strong electron-phonon coupling, due to which hyperconductivity and super thermal conductivity arise. The α-, β-, and γ-types of I-vibrations and waves were determined, elementary quanta of such vibrations (E _Z ) in the atoms of materials were calculated depending on the atomic number (Z), and quanta of such vibrations in a number of atoms were measured by various experimental methods. In FIG. 3 light circles indicate the calculated energies of elementary quanta of these types of I-vibrations in atoms with atomic numbers Z from 1 to 80, and dark circles indicate the corresponding values of quanta measured by various experimental methods. From FIG. Figure 3 shows that the largest quanta of such vibrations and waves correspond to α-type vibrations in which the atom’s core oscillates relative to its electron shell in the vicinity of its center, near the equilibrium position of the nucleus in the atom, which coincides with the position of the minimum potential created by the electrons of the atom’s shell. The magnitude of the α-type I-vibration quanta monotonically decreases from 0.519 eV to 0.22 eV with an increase in Z from 1 to 8 and then monotonically increases to 0.402 eV with a further increase in Z to 80 or more. Such quanta of I-vibrations interacting with electrons and holes according to formula (4) are able to provide zero electrical and zero thermal resistance of materials, a hyperconducting state, at temperatures from T _h to 2500 K and above, that is, the temperature of the superconducting transition T _c in this case can exceed 2500 K. In other words, the superconductivity, the superconducting state, in principle, can exist in materials up to their melting temperature and probably in material melts, when a sufficient electron bond is provided in the melt ktronov with I-vibrations of atomic nuclei.

The I-vibrations of an atomic nucleus in an atom of a certain kind are characterized by a very definite value of the elementary quantum of such vibrations and a set of vibrational terms significantly different from the energy of quanta of I-vibrations and a set of vibrational terms of atoms of another kind. The experimental determination of the quanta of I-vibrations of atomic nuclei in gaseous, liquid, and solid-state materials makes it possible to reliably identify such atoms by the magnitude and set of vibrational terms, which can be the basis for the operation of devices that determine the atomic composition of materials.

I-oscillations show slight anharmonicity. The profile of a spherically symmetric potential field in the vicinity of the center of the electron shell in which the atomic nucleus moves differs from the parabolic dependence, which results in anharmonic corrections to the energy of harmonic vibrations. Corrections for one-dimensional α-type vibrations (ΔE _αν ) with vibrational numbers ν = 0, 1, 2, and 3 were calculated in the first and second orders of the stationary perturbation theory according to [39, p. 93]. As expected, the largest values of corrections relate to vibrational states with ν = 3, which correspond to the largest displacements of nuclei from equilibrium positions in the centers of electron shells. In FIG. 4 graphically shows the corrections to the energy of α-type I-vibrations in states with ν = 0, 1, 2, 3 for atoms depending on the atomic number Z. In the inset of FIG. The 4 corrections are presented on a different scale for atoms with Z> 10. Presented in FIG. 4 data revealed a slight anharmonicity of I-oscillations.

According to the available experimental data, the I-oscillations are one-dimensional, their vibrational energies are described by the formula of a linear harmonic quantum oscillator:

where E _Z is the elementary quantum of vibrations, and the vibrational quantum number ν takes the values 0, 1, 2, 3, ...

The experiments show electron-vibrational transitions from vibrational levels of the ECC to the minimum of the oscillatory potential with a complete loss of energy of I-oscillations. Electron-vibrational transitions are possible even with a loss of energy of the so-called “zero vibrations” equal to E _Z / 2. This does not correspond to a free quantum harmonic oscillator, for which, according to quantum theory, the state at the minimum of the parabolic potential in the center of the electron shell is unacceptable. However, for the classical oscillator, such a state is allowed. This is the dualism of the properties of ECCs exhibiting quantum and classical properties. In other words, ECC, I-vibrations are not free (ideal) and exchange energy (crystalline phonons of various types) with the environment. Given this, it should be assumed that the oscillators describing the I-vibrations of the ECC are linear, one-dimensional harmonic oscillators exhibiting both quantum and classical properties, and the stationary vibrational energies of the I-vibrations of atomic nuclei in the ECC are described by formula (6), including also the energy E _count = 0, corresponding to the minimum of the oscillatory potential.

The value of E _count in semiconductors may exceed the band gap of the material if the value of ν is sufficiently large. The corresponding temperature of the superconducting transition T _c , according to (4), can exceed tens of thousands of degrees. Such temperatures, of course, do not apply to the material as a whole, but only to local centers participating in the I-vibrations.

. Параболические потенциалы, удерживающие атомное ядро вблизи центра электронной оболочки ЭКЦ, представлены слева и справа на фиг. 5 параболами V(r-r₀) и

. Энергетические уровни ЭКЦ с различными значениями колебательного квантового числа ν=0, 1, 2, … показаны пунктирными горизонтальными линиями. Электронные переходы из зоны проводимости на колебательные уровни ЭКЦ с ν>0 показаны вертикальными направленными вниз от Е_с стрелками. Переходы дырок на колебательные уровни ЭКЦ изображены вертикальными направленными вверх от E_v стрелками. Для этого ветви параболы V(r-r₀) обращены вниз, а ветви параболы

обращены вверх, как показано на фиг. 5. Именно такие положения потенциальных кривых V(r-r₀) и

соответствуют возбуждению I-колебаний ЭКЦ за счет энергии электронных или дырочных переходов. Эти переходы преимущественно происходят с испусканием или поглощением нескольких кристаллических фононов, возбуждают I-колебания атомных ядер в атомах ЭКЦ и поэтому они являются электронно-колебательными переходами. Электронно-колебательный процесс на ЭКЦ можно представить как последовательное, периодическое чередование электронно-колебательного перехода из зоны проводимости (или из валентной зоны) на ЭКЦ и последующего перехода с ЭКЦ электрона в зону проводимости (дырки в валентную зону) за счет энергии I-колебаний атомного ядра и кристаллических фононов. Каждый атом, ядро которого выполняет свободные или вынужденные I-колебания, целесообразно рассматривать как I-осциллятор, энергии колебаний которого описываются формулой (6).The electron-vibrational energy levels of the ECC described by formula (6) are manifested in semiconductors in the form of so-called deep energy levels, mainly lying in the forbidden band of the semiconductor. According to the data on the recombination of electrons and holes on the ECC, on the activation energies of the resistance of materials containing ECC, most of the electronic-vibrational levels of the ECC do lie in the band gap of the semiconductor, as shown in FIG. 5. In the center of FIG. 5 shows the energy diagram of a semiconductor, where E _c and E _v denote the energy of the bottom of the conduction band and the ceiling of the valence band, F is the Fermi level. The considered electron-vibrational centers are located in the volume of the semiconductor, at points with coordinates r ₀ and

. The parabolic potentials holding the atomic nucleus near the center of the electron shell of the ECC are presented on the left and right in FIG. 5 parabolas V (rr ₀ ) and

. The energy levels of the ECC with different values of the vibrational quantum number ν = 0, 1, 2, ... are shown by dashed horizontal lines. Electronic transitions from the conduction band to the vibrational levels with ECC ν> 0 are shown vertically downward from E _with arrows. The transitions of holes to the vibrational levels of the ECC are shown by vertical arrows pointing upward from E _v . For this, the branches of the parabola V (rr ₀ ) are turned down, and the branches of the parabola

facing up as shown in FIG. 5. These are precisely the positions of the potential curves V (rr ₀ ) and

correspond to the excitation of I-vibrations of the ECC due to the energy of electronic or hole transitions. These transitions mainly occur with the emission or absorption of several crystalline phonons, excite the I-vibrations of atomic nuclei in the atoms of the ECC and therefore they are electronic-vibrational transitions. The electronic-vibrational process at the ECC can be represented as a sequential, periodic alternation of the electronic-vibrational transition from the conduction band (or from the valence band) to the ECC and the subsequent transition from the ECC of the electron to the conduction band (holes in the valence band) due to the energy of I-vibrations of the atomic nuclei and crystalline phonons. Each atom, the core of which performs free or forced I-vibrations, is advisable to consider as an I-oscillator, the vibrational energies of which are described by formula (6).

, как это качественно показано пунктирной линией на фиг. 6.Due to the strong electron – phonon coupling, ECCs have a large cross section for the capture of electrons and holes, due to which electrons and holes are localized at the indicated electron-vibrational levels of the ECC. Moreover, one of the levels with a quantum number ν = ν * dominates in the processes of capture and retention of charge carriers. As a result, electric charges accumulate at a given level and, precisely near it, the Fermi level F≅E (ν *) = E * is fixed. The density of electronic-vibrational states at the Fermi level is N (F) = N * ⋅δ (E * -F), where N * is the density of states with energy E *, δ (E * -F) is the Dirac delta function. Obviously, N * exceeds the average density of states equal to N / E _Z , where N is the ECC concentration, and from FIG. 5 it can be seen that V * = (E _C -E *) ≥E _Z. If at each center on average at least one electron is localized, then for any unit volume of material (1 cm ³ ) the product V * N (F) ≥N≥10 ¹² . Therefore, the exponent included in expression (4) has a value close to unity, and the calculated temperature of the superconducting transition T _c ≅1.13T _D , where the Debye temperature of I-oscillations is T _D = V * / k. For example, for silicon containing A centers, even at ν = 1, T _c > 2500 K is obtained, i.e., higher than the melting temperature of the material. The corresponding temperature dependence of the electrical resistance (R) of the hyperconductor, expected by the BCS theory, i.e. containing an ECC semiconductor is shown qualitatively in FIG. 6. solid line. It coincides with a zero value of resistance in the temperature range from T _h to T _c , while the temperature T _c may exceed the melting temperature of the material (T _PL ). From FIG. Figure 6 shows that the resistance of the hyperconductor becomes zero at temperatures above the temperature of the hyperconducting transition T _h , and at T <T _h it has a finite, nonzero value. Generally speaking, conventional superconductivity can occur in a hyperconductor at low temperatures, below

as shown qualitatively by the dashed line in FIG. 6.

The characteristic size of the coherent region (coherence length Λ) depends on the temperature of the material. When the material is heated between the electrodes, the coherent regions initially increase in size and at a temperature T _h they occupy all the material from one electrode to another electrode, electrically closing the electrodes with each other, which corresponds to hyperconductivity and super thermal conductivity. If the material temperature exceeds T _h , then a corresponding increase in the size of the coherent regions does not violate the hyperconductivity and superconductivity of the material between the electrodes when heated. However, approaching the material temperature to T _c causes a decrease in the size of the coherent regions (coherence length Λ). At a temperature T _c, although coherent regions still occupy all the material from one electrode to another electrode, electrically closing the electrodes with each other, nevertheless, heating the material above T _c causes the appearance of layers of material that are not related to coherent regions. As a result, the electric and thermal resistances of the material between the electrodes differ from zero values and increase with further heating. Thus, hyperconductivity and super thermal conductivity can exist in the temperature range from T _h to T _c . In this case, the distance between the electrodes (D) should be set no more than the size of the material occupied by the coherent regions between the electrodes. Decreasing D allows decreasing T _h and increasing T _c , i.e. to expand the temperature range necessary for hyperconductivity and conduction of heat from T _h to T _c . An increase in D causes a narrowing of this interval, a decrease in the difference (T _c -T _h ) up to a zero value due to which, with increased D values, the implementation of hyperconductivity and superconductivity requires additional measures, some of which are proposed in this invention.

The range of ECC concentrations allowed for the implementation of electronic-vibrational processes and hyperconductivity from minimum (N _min = 2⋅10 ¹² cm ^-3 ) to maximum (N _max = 6⋅10 ¹⁷ cm ^-3 ) was determined.

For the implementation of hyperconductivity and super thermal conductivity, it is necessary to ensure the connection of I-oscillations with electron motions. Such a connection is provided by ECC via phonons. However, the necessary phonons arise in sufficient quantities only near the Debye temperature of phonons (T _m ). Therefore, when a hyperconductor is heated, a state of hyperconductivity arises and can exist at a relatively high temperature of the hyperconducting transition T _h , which is close to the Debye temperature of the type of crystalline phonons associated with ECC, and at higher temperatures.

. В связи с этим очевидно, что механизм формирования гиперпроводимости вообще говоря отличается от механизма формирования сверхпроводимости. Поэтому новому состоянию с нулевым электрическим и тепловым сопротивлением содержащих ЭКЦ материалов было дано иное название: гиперпроводимость, а сопутствующему гиперпроводимости состоянию с нулевым тепловым сопротивлением (R_T=0) было дано название - сверхтеплопроводность.Hyperconductivity can exist at temperatures between T _h and T _c , with T _h <T _c , while superconductivity can exist at temperatures below

. In this regard, it is obvious that the mechanism of formation of hyperconductivity generally speaking differs from the mechanism of formation of superconductivity. Therefore, the new state with zero electrical and thermal resistance of materials containing ECC was given a different name: hyperconductivity, and the concomitant hyperconductivity state with zero thermal resistance (R _T = 0) was given the name super thermal conductivity.

The relationship between the temperature of the hyperconducting transition T = T _h and the material parameters is determined. Indeed, according to the theory of electron – vibrational transitions [17–20], on average S phonons participate in such a transition to the ECC. In the stationary state, electrons (holes) are mainly localized at the energy level E ^* (see Fig. 5) and the material has a conductivity close to intrinsic conductivity. The rate of thermal generation of electrons and holes in a material is equal to the rate of their recombination at the ECC. From this condition, the following expression (7) is obtained, relating the concentration of electron-vibrational centers N, the temperature of the hyperconducting transition T = T _h and the electron-phonon coupling constant S at the ECC:

where N _C and N _V are the effective densities of electronic and hole states in the conduction and valence bands, respectively, E _g is the semiconductor band gap, and E (ν) is the vibrational energy equal to E *.

In FIG. Figure 7 shows the experimentally measured values of the temperatures of the hyperconducting transition in various materials containing different ECC concentrations, depending on the average atomic number Z _average . Inclined straight lines a and b represent the values of T _h calculated by the formula (7), at the maximum (N _max ) and minimum (N _min ) ECC concentrations. From FIG. Figure 7 shows that the experimental values of T _h lie between lines a and b, which are the limits of the range of values expected from the calculation of T _h , which confirms the agreement between the experimental and calculated results under conditions of thermodynamic equilibrium.

It is known that elastic acoustic (A), optical (O) [40], as well as I-vibrations and I-vibration waves [1, 4, 7-15, 34-38] can exist and propagate in crystals. Acoustic vibrations are time-periodic displacements of the unit cells of the crystal relative to each other and can exist both in simple crystals, when the unit cell of the material contains one atom, and in complex crystals, the unit cell of which contains several atoms. Optical vibrations are displacements of atoms that are periodic in time with respect to each other inside the unit cell and can exist in crystals having two or more two atoms in the cell. Natural (Inherent, I-) vibrations (α, β, and γ types) are time-periodic displacements of the nucleus of an atom or ion relative to its electron shell and can exist in any molecules and materials. Elementary quanta of acoustic and optical vibrations and waves are called phonons, I-vibrations are also quantized. The energy of the quantum of I-oscillations significantly (5-10 times) exceeds the maximum energy of the acoustic phonon and exceeds (4-5 times) the maximum energy of the optical phonon. These types of oscillations are usually described in the approximation of a linear relationship between the displacements of the particles making up the crystal and the forces arising from it. Accordingly, each atom in the crystal can be represented as two coupled oscillators. One of these oscillators represents atomic vibrations with phonon frequencies (p), and the second oscillator is its own (Inherent), I-oscillator represents periodic displacements of a nucleus in an atom with a cyclic frequency of I-oscillations (ω).

Most often, it is believed that the vibrational displacements of atoms in a crystal and the elastic forces caused by such displacements are linearly related to each other, which is why the vibrations are harmonic. In this approximation, the classical equation of motion of an atom in a node of a crystal lattice in a general form can be written as follows:

, F=F^'/М запишем его в видеwhere x is the displacement of the atom from the equilibrium position, M is the mass of the atom, the coefficient g> 0, F 'is the amplitude of the force arising due to the displacement of the atomic nucleus relative to the electron shell with the cyclic frequency of I-oscillations (ω). Dividing both sides of equation (8) by M and designating r = g / 2M, p ² = k / M,

, F = F ^' / M we write it in the form

If r, p and F are independent of time, then this equation with constant coefficients describes the forced oscillations of a damped harmonic oscillator [41, p. 15-22, p. 183-210], and his decision can be written as follows:

where is the amplitude of the forced oscillations

depends on the damping r, the frequency of free oscillations p and the frequency of the driving force co. The coefficient r describes the damping of the oscillations or the loss of oscillatory energy by the oscillator, p is the cyclic frequency of the acoustic wave, i.e. the phonon frequency in our case, ω is the frequency of I-vibrations of the nucleus in the atom of the material.

The change in the phase (δ) of forced oscillations relative to the phase of the external force is described by the following relationships:

It follows from expression (10) that, over time (t), for r> 0, the free oscillations described by the term containing the factor e ^-rt damp and stop, however, only forced oscillations with the phase described by the expressions will exist and exist ( 12). The phase shift of the forced oscillations relative to the phase of the driving force (δ) is rigidly determined by the cyclic frequency of free vibrations of the ECC (ω), the cyclic frequency of the phonons associated with the ECC (p) and the damping of the vibrations (r). Thus, there is a real technical opportunity to create forced ECC oscillations with a given phase, determined by the amplitude and phase of the external stimulating effect on the ECC and the attenuation of ECC oscillations, i.e. coefficient r. To do this, create a compelling, synchronizing signal in the material with a certain frequency and phase.

If the cyclic vibrational frequencies of the ECC (ω) and phonons (p) in formulas (12) are interchanged, then the physical meaning of the formulas will not change. Consequently, the technical function of the synchronizing signal can be performed by its own, i.e. I-vibrations of ECC, in relation to phonons and phonons in relation to vibrations of atomic nuclei in ECC. Therefore, the amplitude and phase of forced vibrations of the ECC can be changed by changing either the amplitude and phase of the natural vibrations of the ECC, or by changing the amplitude and phase of the phonons associated with the ECC.

.It was found that in a state of hyperconductivity the material has zero electrical resistance and zero thermal resistance, that is, hyperconductivity coexists with super thermal conductivity [13, 16]. In addition, it was found that the materials in the hyperconducting state are inhomogeneous, and coherence regions with a characteristic size Λ arise in them, which has the meaning of the coherence length. So in an isotropic material, the coherence region has the shape of a ball with radius Λ. The scattering of energy by electrons in the volume of the coherent region is impossible due to the coherence, identity, and indistinguishability of the electron-vibrational states of atoms in the coherent region. Electrons experience energy dissipation only within the material layer adjacent to the coherent region, having a thickness equal to the average energy dissipation length

.

The science of superconductors uses the concept of coherence length. B.L. Ginzburg and L.D. Landau [42] introduced the concept of a temperature-dependent coherence length ξ (T). The quantity ξ (Т) determines the distance at which the wave function of the electrons can change without a significant change in their energy.

, где

- средняя длина свободного пробега электрона.The concept of coherence length as applied to superconductors was also introduced by AB Pippard [43]. The Pippard coherence length (ξ ₀ ) is the minimum size of wave packets that superconducting charge carriers can form in a pure (defect-free) material when there is no electron scattering, and in the presence of scattering, the coherence length

where

is the mean free path of an electron.

The wave functions in these theories have different meanings. The coherence lengths in these theories also have different meanings and relate to superconducting electrons in the conduction band of a superconductor.

On the contrary, in the claimed invention, hyperconductivity and superconductivity are due to the electrons of the local centers and their coherent oscillations, and not to the electrons of the material’s conduction band as in the seroconductor. The coherence lengths known in superconducting science cannot be reasonably used to describe the characteristic sizes of sections of a hyperconductor with coherent oscillations. In this regard, the coherence length Λ is required, which represents the characteristic size of the material region with coherent oscillations and therefore having zero electrical and thermal resistance.

Hyperconductivity and super thermal conductivity are due to the interaction of electrons, phonons and I-oscillations at the ECC and this fundamentally differs from superconductivity due to conduction electrons bound by phonons into Cooper pairs. Apparently in nature there are many mechanisms for the formation of zero electrical resistance (with sets of various properties), of which so far we only know superconductivity and hyperconductivity. However, one cannot mechanically extend the properties of superconductors to hyperconductors only because superconductors have become known before. Therefore, it is advisable to clarify the meaning of the coherence length Λ.

и объем

. В области рассеяния имеется

центров рассеяния. За среднее время рассеяния энергии (τ_е) на этих центрах в среднем рассеивается энергия, равная

. С другой стороны, за это же время те колебательная энергия (Е_кол) уменьшается в е раз то есть на (1-1/е)Е_кол. Если приравнять эти энергии друг к другу и положить

, то получается алгебраическое уравнение:The coherence length Λ for a single coherent region under thermodynamically equilibrium conditions, when it does not interact with other coherent regions or with the boundaries of a homogeneous material, can be quantified. For reasons of minimum surface energy, the coherence region in an isotropic material should have the shape of a ball with a radius equal to the coherence length Λ. In FIG. Figure 8 shows a section of a material by a plane (XY) passing through the center of a spherical coherence region. The boundary of the coherence region in FIG. 8 is shown by a dashed circle with radius Λ. The energy dissipation of I-vibrations occurs in the part of the crystal adjacent to the coherent region, which is the energy dissipation region, which has the form of a spherical layer with a thickness equal to the average electron energy dissipation length

and volume

. In the scattering region there is

scattering centers. During the average energy dissipation time (τ _e ), these centers average energy dissipation equal to

. On the other hand, during the same time, those vibrational energy (E _count ) decreases e times, i.e., by (1-1 / e) E _count . If you equate these energies to each other and put

, we obtain the algebraic equation:

which has the following solution:

, δ - доля энергии, рассеиваемой в одном акте рассеяния,

- средняя длина свободного пробега,Where

, δ is the fraction of energy dissipated in one scattering event,

- average mean free path,

and value

- интеграл по объему элементарной ячейки кристалла, U_k - амплитуда электронной волновой функции Блоха, V_зв - скорость звука в материале,

- постоянная Дирака, θ - параметр гауссова распределения температурной зависимости интенсивности I(Т) электронно-колебательных переходов [17-20]:does not depend on the temperature of the material T. In the formula (15), the following notation is used: m ^* is the effective mass of the charge carrier, k is the Boltzmann constant, ζ is the fraction of energy dissipated by the charge carrier in one scattering event, M is the mass, and Ω is the elementary volume material cells

is the integral over the volume of the unit cell of the crystal, U _k is the amplitude of the electronic Bloch wave function, V _sv is the speed of sound in the material,

is the Dirac constant, θ is the parameter of the Gaussian distribution of the temperature dependence of the intensity I (T) of electronic-vibrational transitions [17–20]:

where T _m is the material temperature at the maximum intensity of electron-vibrational transitions, i.e. maxI (T) = I (T _m ). It was found that the temperature T _m coincides with the Debye temperatures of phonons connected at the ECC. The parameter θ has a dimensionality of temperature, but its value does not depend on the temperature of the material and for many materials θ usually has a constant value lying in the approximate range from 2 K to 6 K.

It can be seen from (13) that the coherence length depends on the vibrational energy of the coherent region E _count , which usually increases with increasing material temperature, and the formation of a coherent region is possible at X> 0, when E _count > 0.79 kθ, i.e. at temperatures of about 1.5 K and above.

In FIG. 9 shows a cross section of the material between the electrodes by a plane passing through the center of the coherence region of radius Λ = D / 2 located between the electrodes 1 and 2 separated by the distance D. From FIG. Figure 9 shows that for the implementation of hyperconductivity and superconductivity in the material between the electrodes 1 and 2, it is necessary to set the distance D between the electrodes no more than 2Λ, D≤2Λ, or provide an increase in Λ to a value of D / 2 or more. Then the electrodes 1 and 2 will be connected by one coherent region with zero resistance, and throughout the course of the material between the electrodes there will be hyperconductivity and super thermal conductivity.

, возможна традиционная сверхпроводимость. Гиперпроводимость (и сверхтеплопроводность) существует между T_h и T^*.In real material, when heated from low temperatures (≈1.5 K), the concentration and sizes of coherent regions increase, the distances between coherent regions decrease, they can close together at temperatures T _h and above, providing hyperconductivity and super thermal conductivity in the material between the electrodes up to temperature T _c . However, upon heating, the sizes of the regions of scattering of vibrational energy mutually overlap and decrease, and the sizes of the coherent regions themselves decrease in accordance with the inverse temperature dependence in (14). As a result, the hyperconductivity and thermal conductivity arising in the material between the electrodes cease, disappear above a certain temperature (T ^* ), the electrical and thermal resistances deviate from zero and increase with further heating of the material. The real temperature dependence of the electrical resistance of the material between the electrodes is qualitatively presented in FIG. 10. At low temperatures, lower

, traditional superconductivity is possible. Hyperconductivity (and super thermal conductivity) exists between T _h and T ^* .

Reducing the distance between the electrodes D allows you to reduce the temperature T _h and increase the temperature T ^* , i.e. allows you to increase the temperature range of the existence of hyperconductivity between the electrodes. Increasing the distance between the electrodes D to values greater than 4Λ prevents the implementation of hyperconductivity and superconductivity under the conditions of the prototype [16], but this obstacle can be eliminated by an additional, alternative removal of vibrational energy from the material. Possible methods for removing vibrational energy from a material are provided in this invention.

The Josephson effects occurring in superconducting tunnel junctions and consisting in the tunneling of Cooper electron pairs through the gap between superconductors differ from the electron tunneling processes occurring between coherent regions in tunneling hyperconducting structures, and therefore the electrical effects occurring in hyperconducting tunneling structures are analogous to Josephson effects. It has been established that when there is a gap between the coherent regions of a tunnel-thin gap for electrons (vacuum, dielectric, or consisting of atoms of the main or other substance) between these coherent regions, analogs of Josephson effects arise and exist, caused by the tunneling of electrons of coherent regions through the tunnel thin gap. In contrast to the Josephson effects due to the tunneling of Cooper pairs of electrons and occurring at temperatures below the superconducting transition temperature, the analogs of the Josephson effects are due to the tunneling of electrons through a tunnel thin gap between adjacent coherent regions at near-room and higher temperatures. The participation of Cooper electron pairs in analogues of Josephson effects was not revealed.

An analogue of the stationary Josephson effect manifests itself in the form of a constant electric current (I ₀ ) flowing between coherent regions or in the form of a voltage difference between coherent regions separated by a tunnel thin gap of thickness d, even if no external electric voltage is applied between the coherent regions. The polarity (current direction) of the stationary Josephson effect is determined by the sign of the phase difference of the coherent oscillations of these regions. The current I _{0 is} formed by those electrons that tunnel between the electron-vibrational states of neighboring coherent regions with the participation of the associated phonons and I-vibrations.

, протекающего между когерентными областями, если между этими когерентными областями приложено внешнее постоянное напряжение V.An analogue of the high-frequency non-stationary Josephson effect manifests itself in the form of an alternating (RF or microwave) electric current with a cyclic frequency

flowing between coherent regions if an external constant voltage V is applied between these coherent regions

Distinctive features of the claimed invention are close to the distinctive features of the known method [16] which it is advisable to accept as a prototype of the claimed invention. The prototype uses a sample of a semiconductor material with rectifying electrodes 1 and 2, separated by a distance D, is introduced into the material of the ECC. In the prototype, as in the claimed invention, use is made of electronic-vibrational transitions between different ECCs and the resulting electric currents and heat fluxes. The prototype shows the limits of the permissible concentration of ECC (N) (from 2⋅10 ¹² cm ^-3 to 6⋅10 ¹⁷ cm ^-3 ) established by analyzing experimental data on electron tunneling through thin dielectric layers in metal-insulator-semiconductor contacts and features band structure of counterclosed Schottky contacts [44–46]. Typical data on such processes of electron tunneling through a dielectric layer of thickness h in InP-based structures are shown in FIG. 11. From those shown in FIG. 11 data it is seen that the maximum concentration of ECC for electronic-vibrational processes reaches N _max = 6⋅10 ¹⁷ cm ^-3 . The minimum concentration of ECC is close to N _min = 2⋅10 ¹² cm ^-3 , which follows from a theoretical assessment and corresponds to modern technological and metrological capabilities to reduce N to such values and measure such ECC concentrations with acceptable accuracy. The well-known “1/3” rule, which determines the height of the Schottky potential barrier in a metal-semiconductor contact, is described in [47, p. 287].

In the prototype, choose D << L, where L is the penetration depth of the electric field into the material caused by the contact potential difference, D _min = 10 nanometers, D _max = 30 μm. However, in the claimed invention it is shown that the possibilities for choosing the value of D vary significantly depending on external conditions relative to the material between the electrodes, in particular, on the intensity of the output of vibrational energy from the material, as a result of which the value of D can significantly exceed that indicated in the prototype D _max .

Criticism of the prototype of the invention. The use of the prototype of the invention in the implementation of hyperconductivity and superconductivity in various semiconductor materials has revealed its low efficiency. In technical language, the use of the prototype ensures the achievement of the purpose of the invention, but the yield of devices suitable for technical use demonstrating hyperconductivity and super thermal conductivity is small, that is, the effectiveness of the prototype is small, often it is a percentage or less than a percent. In this regard, a method is needed that provides a significant increase in the effectiveness of the prototype, a method is needed for the effective implementation of hyperconductivity and super thermal conductivity.

The aim of this invention is to provide a method for the effective implementation of hyperconductivity and superconductivity.

SUMMARY OF THE INVENTION

, где с - скорость света в вакууме, ε - относительная диэлектрическая проницаемость материала, F - характерная резонансная частота замедляющего устройства; устанавливают и поддерживают тепловой контакт материала с термостатом; устанавливают и поддерживают согласованную электромагнитную связь части материала, примыкающей к электроду 1, или (и) части материала, примыкающей к электроду 2, или материала, или части материала расположенного между электродами 1 и 2, с высокочастотным (высокочастотными, ВЧ) и (или) сверхвысокочастотным (сверхвысокочастотными) (СВЧ) замедляющим устройством (замедляющими устройствами) таким (такими) как коаксиальная линия, волноводная линия, полосковая линия, резонатор, колебательный контур, которые характеризуются резонансными частотами (F) в диапазоне от 10⁶ Гц до 3⋅10¹⁵ Гц и добротностями Q≥10; материал нагревают до температуры (Т), равной или превышающей температуру гиперпроводящего перехода (T_h), до температур существования гиперпроводимости и свертеплопроводности (Т_h≤Т≤Т^*), в результате электрическое сопротивление и тепловое сопротивление материала между электродами обращаются в ноль, то есть осуществляется гиперпроводимость и сверхтеплопроводность, усиливается эффект Мейснера; измеряют электрическое и (или) тепловое сопротивление материала между электродами, и (или) T_h, и (или) Λ,, или (и) эффект Мейснера, или (и) уровень внутренних (собственных) шумов.This objective of the invention is achieved by applying the claimed method for the effective implementation of hyperconductivity and superconductivity according to paragraph 1 of the formula of which, as in the prototype, use non-degenerate or slightly degenerate semiconductor material, place electrodes 1 and 2 on its surface or in its volume, forming rectifying contacts with the material, such as metal-semiconductor contacts, Schottky contacts, characterized in that the distance between the electrodes (D) is chosen no more than 4Λ, D≤4Λ, where Λ is the length of the coher essence; the characteristic size of the contact area of each electrode with the material is chosen no more than a quarter of the length of the RF or microwave waves in the material

where c is the speed of light in vacuum, ε is the relative permittivity of the material, F is the characteristic resonant frequency of the moderator; establish and maintain thermal contact of the material with the thermostat; establish and maintain a coordinated electromagnetic coupling of the part of the material adjacent to the electrode 1, or (and) the part of the material adjacent to the electrode 2, or the material, or the part of the material located between the electrodes 1 and 2, with high-frequency (high-frequency, high-frequency) and (or) microwave (microwave) slow-down device (slow-down devices) such (such as) a coaxial line, a waveguide line, a strip line, a resonator, an oscillatory circuit, which are characterized by resonant frequencies (F) in the range from 10 ⁶ Hz to 3 × 10 ¹⁵ Hz and Q factors Q≥10; the material is heated to a temperature (T) equal to or higher than the temperature of the hyperconducting transition (T _h ), to the temperatures of the existence of hyperconductivity and superconductivity (T _h ≤T≤T ^* ), as a result, the electrical resistance and thermal resistance of the material between the electrodes become zero, then there is hyperconductivity and super thermal conductivity, the Meissner effect is enhanced; measure the electrical and (or) thermal resistance of the material between the electrodes, and (or) T _h , and (or) Λ ,, or (and) the Meissner effect, or (and) the level of internal (intrinsic) noise.

According to claim 2, in the method according to claim 1, in order to stabilize the hyperconducting transition, the material between the electrodes is heated from a temperature of ≈1.5 K or from a higher temperature to the existence temperatures of hyperconductivity (T _h ≤T≤T ^*) , the heating is stopped or (and ) create a magnetic field transverse to the current in the material with an induction of up to 2 Tesla for up to 60 seconds, maintain the temperature of the material in the range between T _h and T ^* ; as a result, the electrical resistance and thermal resistance of the material between the electrodes turn to zero and thereby hyperconductivity and super thermal conductivity are realized, the Meissner effect is enhanced.

According to claim 3 of the formula in the method according to claim 1, in order to reduce the temperature of the hyperconducting transition T _h by increasing the coherence length Λ and in order to enhance the Meissner effect, the material size (b) is chosen at least two coherence lengths (2Λ), (b≥2Λ ), for example, choose a material plate thickness of at least 2Λ or a material layer thickness of at least 2Λ on a semiconductor, semi-insulating or dielectric substrate; measure T _h , and (or) Λ, and (or) the value of the Meissner effect.

According to claim 4, in the method according to claim 3, in order to realize hyperconductivity and superconductivity in the bulk of the material with dimensions many times greater than 2Λ, and also with the aim of enhancing the Meissner effect, interspersed particles forming rectifying contacts are placed on the surface or (and) in the bulk of the material with a material, for example, interspersed metal particles with sizes (c) of no more than Λ, (c≤Λ), in a concentration of (2Λ) ^-3 to (2c) ^-3 or (s) of particles of which each is individually or a group ( groups) of particles form a slowing system (slowing down with systems) or (and) is (are) a part (parts) of a retarding system (retarding systems); measure the temperature of the hyperconducting transition T _h and (or) the coherence length Λ, and (or) the magnitude of the Meissner effect.

According to p. 5 of the formula, in the method according to p. 3, in order to implement an analog of the stationary Josephson effect, the distance between the electrodes is set in excess of four coherence lengths (4Λ) by the tunnel-transparent gap of d between the coherence regions, (D = 4Λ + d), (10А ° ≤d≤50 microns); measure the direct current in the material between the electrodes 1 and 2 and (or) its direction, polarity, or (and) measure the constant potential difference between the electrodes 1 and 2 and (or) its polarity; the measurement results are interpreted as the value of the analogue of the stationary Josephson effect and its polarity, respectively.

According to p. 6. in the method according to p. 5, in order to implement an analog of the non-stationary high-frequency Josephson effect, a constant voltage of arbitrary polarity less than the breakdown voltage of this structure is applied between electrodes 1 and 2; measure the magnitude of the alternating voltage between the electrodes and (or) measure the frequency (frequencies) of alternating voltage or (and) measure the magnitude of the alternating current in the material between the electrodes and (or) measure the frequency (frequencies) of alternating current in the material between the electrodes and (or) measure the phase voltage and (or) phase of current; the measurement results, respectively, are identified as the magnitude, frequency and phase of the analogue of the high-frequency non-stationary Josephson effect.

According to p. 7 of the formula, in the method according to p. 5, in order to implement analogues of the Josephson effects, two materials are used, separated from each other by a tunnel thin dielectric layer of thickness d, the size of each material is chosen at least four coherence lengths (4Λ), on the outer surface or in the volume each material is placed an electrode (electrodes), forming (forming) a rectifying contact (rectifying contacts) with the material, for example, contact (contacts) metal-semiconductor; measure the direct current between the electrodes 1 and 2 in this structure (electrode 1 - material 1 - dielectric - material 2 - electrode 2); measure a constant potential difference between these electrodes; the measurement results are interpreted as an analog of the stationary Josephson effect; apply a constant voltage between the electrodes with a value that does not reach the electrical breakdown voltage of this structure, measure the alternating voltage between electrodes 1 and 2 and / or alternating current in the material between the electrodes, and the measurement results are identified as an analog of the high-frequency non-stationary Josephson effect; measure the frequency (s) of the alternating voltage between the electrodes and (or) the alternating current in the material between the electrodes and (or) the phase of the current and voltage; The measurement results are identified as the magnitude, frequency (s) and phase of the analogue of the high-frequency non-stationary Josephson effect.

According to claim 8, in the method of claim 5, two different materials forming a heterostructure are used to implement Josephson effects; an electrode is formed on the outer surface or in the volume of each material, forming a rectifying contact with the material, for example, a metal-semiconductor contact; measure the direct current in the material between the electrodes 1 and 2 or (and) measure the voltage between the electrodes and its polarity and identify the measurement results as the magnitude and polarity of the stationary Josephson effect; a constant voltage of no more than the breakdown voltage of a given heterostructure is applied between electrodes 1 and 2, the magnitude and (or) frequency and (or) phase of the voltage between the electrodes and (or) the current in the material between the electrodes are measured, and they are identified as the magnitude, frequency, phase of the analog high-frequency non-stationary Josephson effect.

переменное напряжение величиной V не более напряжения пробоя данной структуры; изменяют полярность и (или) фазу этого напряжения и (или) его величину; измеряют полярность и (или) фазу и (или) частоту аналога высокочастотного нестационарного эффекта Джозефсона и (или) измеряют изменения величины эффекта Мейснера.According to claim 9, in the method according to claim 6, in order to control the magnitude, frequency, phase of the high-frequency non-stationary Josephson effect and (or) the magnitude of the Meissner effect by means of an electric voltage between electrodes 1 and 2, a constant or low frequency frequency is applied between these electrodes

alternating voltage of V no more than the breakdown voltage of this structure; change the polarity and (or) the phase of this voltage and (or) its value; measure the polarity and (or) phase and (or) the frequency of the analogue of the high-frequency non-stationary Josephson effect and (or) measure changes in the magnitude of the Meissner effect.

квантов⋅с^-1см^-2, где N^* - эффективное число электронных состояний в разрешенной энергетической зоне материала, ζ - коэффициент оптического поглощения и τ - время жизни электронов (дырок), в спектральном диапазоне собственного, основного, фундаментального поглощения материала или (и) в спектральном диапазоне электронно-колебательных переходов ЭКЦ или (и) в спектральном диапазоне упругих колебаний с частотами фононов локализованных на ЭКЦ электронов; измеряют вызванные излучением изменения мощности (мощностей) рассеивающихся в нагрузках связанных с материалом замедляющих устройств или (и) измеряют изменения величины (величин) аналогов эффектов Джозефсона или (и) измеряют изменение частоты (частот) и фазы (фаз) аналога высокочастотного эффекта Джозефсона или (и) измеряют изменение температуры гиперпроводящего перехода (Т_h) или (и) измеряют изменения величины эффекта Мейснера; по результатам измерений делают вывод о свойствах излучения, например, о интенсивности регулирующего излучения, о его поляризации, о его частоте, о его когерентности.According to paragraph 10 of the formula in the method according to claim 5, in order to control the temperature of the hyperconducting transition T _h , the magnitude of the Josephson effects, the frequency and phase of the high-frequency non-stationary Josephson effect, as well as the magnitude of the Meissner effect using electromagnetic radiation in the material between the electrodes 1 and 2 direct electromagnetic radiation up to

quanta⋅s ^-1 cm ^-2 , where N ^* is the effective number of electronic states in the allowed energy zone of the material, ζ is the optical absorption coefficient and τ is the lifetime of electrons (holes) in the spectral range of intrinsic, fundamental, fundamental absorption of the material or ( i) in the spectral range of electronic-vibrational transitions of the ECC or (and) in the spectral range of elastic vibrations with phonon frequencies of electrons localized on the ECC; measuring radiation-induced changes in the power (capacities) of the moderators dissipating in the loads associated with the material; and (i) measuring changes in the magnitude (s) of the analogs of Josephson effects or (and) measuring changes in the frequency (frequencies) and phase (s) of an analog of the high-frequency Josephson effect or ( i) measure the change in temperature of the hyperconducting transition (T _h ) or (i) measure changes in the magnitude of the Meissner effect; according to the measurement results, a conclusion is drawn about the properties of radiation, for example, about the intensity of regulatory radiation, about its polarization, about its frequency, about its coherence.

According to p. 11 of the formula in the method according to p. 10 with the aim of stabilizing the hyperconducting and superconducting state, stabilizing the temperature of the hyperconducting transition T _h , the magnitude of the Josephson effects and the frequency of the high-frequency non-stationary Josephson effect, and also with the aim of changing the value of the Meissner effect the thickness of the semiconductor wafer, or thickness the semiconductor layer on the substrate, or the thickness of the substrate, or the total thickness of the semiconductor layer and the substrate, or the distance (distance) between mutually parallel boundaries material or material and the substrate is chosen equal to (equal to) or a multiple (multiple) of W = PV _sv / 2, where V _sv is the speed of sound propagating between mutually parallel boundaries of the semiconductor, substrate, or semiconductor and substrate; in the material between the electrodes create an alternating electric field with intensity up to SE _z / e, where S is the constant of electron-phonon interaction and E _z is the elementary quantum of I-vibrations of nuclei in atoms, but not more than the breakdown voltage, and (or) constant and ( or) an alternating magnetic field with induction B≤2 T with a period of P; measure the temperature of the hyperconducting transition T _h , the magnitude and (or) polarity of the analogue of the stationary Josephson effect, the magnitude and (or) the frequency and (or) phase of the high-frequency non-stationary Josephson effect, the magnitude and (or) change in the magnitude of the Meissner effect.

According to p. 12 of the formula in the method according to p. 5, in order to obtain an electric current through an analog of the stationary Josephson effect, heat is supplied to the material; direct a direct current in the material between the electrodes, representing an analog of the stationary Josephson effect or similar currents from several such structures in series or in parallel to a stationary or mobile device (s) that consume electric current.

According to paragraph 13 of the formula, in the methods of claim 6, in order to obtain electric current (electric energy) by means of an analog of the high-frequency non-stationary Josephson effect, heat is supplied to the material, between electrodes 1 and 2 a constant potential difference of up to SE _z / e is maintained, but not more voltage breakdown structure; the high-frequency current flowing between the electrodes and representing an analogue of the high-frequency non-stationary Josephson effect is sent to devices that consume this current, if necessary, this current is detected (rectified), and the direct current obtained as a result of detection is directed to a stationary or mobile device consuming (consuming) electric energy (device) .

According to p. 14 of the formula in the method according to p. 8, in order to control the temperature of the material between the electrodes, the currents representing the analog of the stationary Josephson effect or (and) the analog of the high-frequency non-stationary Josephson effect are changed by changing the load resistance (impedance) for these currents; measure the temperature of the material between the electrodes.

According to p. 15 of the formula in the method according to p. 7, in order to control the values of analogs of the Josephson effects, the frequency of the analog of the high-frequency Josephson effect, the values of the Meissner effect change the temperature of the material between the electrodes in the temperature region above T _h , that is, in the region of hyperconductivity and superconductivity, measure the magnitude of the analog of the stationary Josephson effect and (or) the magnitude of the analog of the high-frequency non-stationary Josephson effect, and (or) the frequency of the analog of the high-frequency Josephson effect, and (il i) the value of the Meissner effect.

According to claim 16, in the method according to claim 7, in order to control the temperature of the hyperconducting transition T _h , the magnitude of the Josephson effects and the frequency of the high-frequency non-stationary Josephson effect, as well as the magnitude of the Meissner effect, a field electrode is used that forms a rectifying contact or a metal-insulator-semiconductor contact ( MIS) with the material between the electrodes, or use several such field electrodes; constant, variable or pulsed external voltages of direct or reverse polarity with respect to a material less than the voltage (s) of breakdown or destruction of the structure are supplied to the field electrode (to the field electrodes); measure the change in the temperature of the hyperconducting transition T _h or (and) the change in the magnitude of the Josephson effects or (and) the change in the frequency of the high-frequency non-stationary Josephson effect or (and) the change in the magnitude of the Meissner effect caused by the action of voltages on the field electrode (field electrodes) relative to the material.

According to p. 17 of the formula in the method according to p. 10, in order to simplify the method, use a sample of material with one electrode (with the number 1 or 2); constant or modulated in amplitude and / or frequency and / or phase and / or polarization and / or direction of propagation and radiation to be detected is directed to a part of the material adjacent to the electrode; changes in current and / or frequency of a current caused by radiation in a portion of the material adjacent to the electrode; ; the measurement results judge the properties of the detected radiation, for example, the intensity and (or) the frequency and (or) the modulation spectrum, and (or) the polarization, and (or) the direction of propagation of the detected radiation.

According to p. 18 of the formula in the method according to p. 17, in order to increase the sensitivity during optical regulation of the magnitude, frequency, phase (polarity) of analogs of Josephson effects, a coating that is adjacent to the electrode is coated with an antireflection material in the spectral region of the control radiation, or (and) it is installed parallel to the surface of the material at a distance (h) a multiple of half the radiation wavelength, a mirror facing the material with the working surface; radiation is directed into a material adjacent to the electrode at an acute angle of not more than arctan [2Λ / (h⋅i)] to the normal direction to the surfaces of the material and the mirror, where i is the number of reflections of the radiation beam from the surface of the material or mirror; measure the magnitude and (or) frequency and (or) phase (polarity) of the Josephson effect (s) and (or) the magnitude and (or) change in the magnitude of the Meissner effect.

According to p. 19 of the formula in the method according to p. 3 in order to control the coherence length Λ, the values of analogues of the Josephson effects, the frequency of the high-frequency non-stationary analog of the Josephson effect, as well as the values of the Meissner effect, change the quality factor Q of the material connected (connected) between the electrodes of the retardation device devices) or (and) change the coefficient (coefficients) of the connection of the retarding device (retarding devices) with the material between the electrodes; measure the length or changes in the coherence length Λ or (and) changes in the magnitude of the Josephson effects or (and) changes in the frequency and / or phase of the high-frequency Josephson effect or (and) change in the Meissner effect.

According to claim 20, in the method according to claim 3, in order to control the temperature of the hyperconducting transition T _h , the magnitude of the Josephson effects and the Meissner effect, the frequency of the high-frequency non-stationary Josephson effect, as well as to improve the stability of the hyperconducting state and reduce internal noise in the material between the electrodes permanent, alternating or pulsed magnetic field with induction (B) up to 2 Tesla; change the direction of induction with respect to the direction of the electron-vibrational current between the electrodes or (and) change the frequency of induction or change the magnitude, direction and frequency of induction; measure the temperature of the hyperconducting transition T _h , or (and) the magnitude (s) or (and) the frequency or (and) the phase (polarity) of the Josephson effects, or (and) the Meissner effect, or (and) the level of internal noise.

, где S - константа электрон-фононного взаимодействия, N - концентрация ЭКЦ, τ - время жизни электронов (дырок) в материале между электродами; изменяют частоту, направление распространения или (и) поляризацию упругой волны относительно направления между электродами; измеряют изменения температуры гиперпроводящего перехода T_h или (и) величину стационарного или (и) величину, частоту и фазу высокочастотного нестационарного эффекта Джозефсона или (и) эффект Мейснера или его изменение.According to claim 21, in the method according to claim 11, in order to control the temperature of the hyperconducting transition T _h , the magnitude of the analogs of the Josephson effects, the frequency of the analog of the high-frequency non-stationary Josephson effect, as well as the Meissner effect, the elastic wave is sent between the electrodes between the electrodes (elastic waves ), i.e., the flow of sound, infrasound, ultrasound or hypersound with a frequency F and with a power density of up to

where S is the electron-phonon interaction constant, N is the ECC concentration, τ is the electron (hole) lifetime in the material between the electrodes; change the frequency, direction of propagation or (and) the polarization of the elastic wave relative to the direction between the electrodes; measure changes in the temperature of the hyperconducting transition T _h or (and) the value of the stationary or (and) the value, frequency and phase of the high-frequency non-stationary Josephson effect or (and) the Meissner effect or its change.

A comparative analysis of the invention with the prototype shows that the claimed method is characterized by the use of thermal contact of the material with the thermostat, the use of a coordinated electromagnetic coupling of the material between the electrodes 1 and 2 or adjacent parts of the material with a coaxial line, a waveguide line, a strip line, with a resonator, oscillatory circuit, or other decelerating devices having resonant frequencies in the range of 10 ⁶ Hz to ¹⁵ Hz and 3⋅10 quality factors Q≥10, quality factors change, a change the coupling coefficient of moderators with the material, heating the material from initial temperatures (≈1.5 K), choosing specific sizes of the electrodes forming rectifying contacts with the material, choosing the distance D between the electrodes, choosing a material sample size of at least 4Λ, changing the temperature of the material between the electrodes in the temperature region of the existence of Meissner effects, by introducing into the material interspersed particles of certain sizes and in a certain concentration, forming rectifying contacts with matter scrap, including inclusions that are parts of slowing systems or forming slowing systems, by choosing the thickness d of the tunnel-thin gap between the coherence regions, measuring the direct current in the material between electrodes 1 and 2, or the constant potential difference between electrodes 1 and 2 and identifying the results of these measurements as analogue of the stationary Josephson effect, by applying a constant electric voltage (V) between electrodes 1 and 2 and measuring the alternating current in the material between electrodes 1 and 2, measuring alternating voltage between electrodes 1 and 2 and identifying the measurement results as an analog of the high-frequency non-stationary Josephson effect, measuring the frequency of alternating current in the material between electrodes 1 and 2 and measuring the voltage frequency between the electrodes and identifying these measurements as the frequency of the analog of the high-frequency non-stationary Josephson effect, creating constant or alternating electric, magnetic, and also thermal fields in the material between the electrodes, certain changes and directions these fields, illumination of the material or its parts by external electromagnetic radiation of a certain intensity and spectral composition, direction of elastic waves: sound, ultrasound, hypersonic into the material between the electrodes, the choice of the size of the material and structure on the substrate in accordance with the condition of acoustoelectric synchronism, as well as the measurement of the Meissner effect .

Analysis of analogues and prototype of the invention did not reveal the same sets of distinctive features.

In the claimed invention for the first time used the ability to change, increase the coherence length Λ, due to high-frequency electromagnetic removal of vibrational energy from the material through slowing down devices. This allows you to change the energy fluxes and thermodynamic equilibrium of electron-vibrational processes in the material, to increase Λ and, accordingly, increase the efficiency of the prototype, which corresponds to the purpose of the invention.

Thus, the claimed method for the effective implementation of hyperconductivity and superconductivity meets the criteria of the invention of "novelty."

Comparison of the claimed method for the effective implementation of hyperconductivity and superconductivity with a prototype and other technical solutions in the art did not reveal technical solutions that have similar sets of distinctive features. This allows you to make a reasonable conclusion about the conformity of the claimed technical solution to the criteria of the invention "significant differences".

Really:

, где

не зависит от температуры, с колебательной энергией когерентной области материала Е_кол, с температурой материала T, и с величиной θ, имеющей размерность температуры, принимающей для различных материалов и типов ЭКЦ фиксированное, независящее от температуры материала значение от 2 K до 10 K, обычно 4 K≤0≤6 K. Процесс рассеяния энергии электронами представлен величиной

, взаимодействие ЭКЦ с окружающей его кристаллической средой представлен величиной θ. Величины

и θ определяются только микроскопическими взаимодействиями внутри материала и не поддаются регулированию за счет изменения внешних условий по отношению к материалу. Регулирование длины когерентности Λ посредством изменения температуры материала T, как это следует из формул (13-15) не обеспечивает увеличение Λ, необходимое для увеличения эффективности прототипа [16]. Следует учесть, что формула (13) верна только в условиях термодинамического равновесия.This invention is based on using the technical ability to control the coherence length Λ, which is the characteristic size of the coherence region. In a homogeneous isotropic material under conditions of thermodynamic equilibrium, Λ is defined as applied to a separate, isolated coherent region. The corresponding formulas (13-15) are given in the description of the claimed invention. They relate the quantity Λ to the electron scattering length

where

independent of temperature, with the vibrational energy of the coherent region of the material E _count , with the temperature of the material T, and with a value of θ having a temperature dimension that takes a fixed value independent of the material temperature from 2 K to 10 K for various materials and types of ECC, usually 4 K≤0≤6 K. The process of energy dissipation by electrons is represented by

, the interaction of the ECC with its surrounding crystalline medium is represented by θ. Quantities

and θ are determined only by microscopic interactions inside the material and are not subject to regulation due to changes in external conditions with respect to the material. The regulation of the coherence length Λ by changing the temperature of the material T, as follows from formulas (13-15) does not provide an increase in Λ, which is necessary to increase the efficiency of the prototype [16]. It should be noted that formula (13) is valid only under conditions of thermodynamic equilibrium.

It is known that α, β, γ-types of intrinsic (Inherent, I-) elastic vibrations and waves due to elastic displacements of nuclei in atoms, as well as displacements of electron orbitals K and L inside atoms together with atomic nuclei, can exist in materials. Natural vibrations of the α-type are vibrations of nuclei relative to the electron shell of an atom in a material. The natural vibrations of the β-type are joint vibrations of nuclei and electrons of K electronic orbitals. The natural vibrations of the γ type are the joint vibrations of the nucleus and electrons of the K and L orbitals relative to the rest of the electron shell of the atom of the material. There are also elastic I-vibrations and waves due to displacements of the electrons M, N and one-electron orbitals together with the atomic nucleus relative to the rest of the electron shell of the atom in the material. The quanta of vibrational energies of such I vibrations involving electrons M, N, and O of electronic orbitals are small, and the corresponding frequencies fall into the frequency range of acoustic phonons. Such elastic I-vibrations with frequencies from 10 ⁶ Hz to 3 × 10 ¹³ Hz provide interaction between ECCs, exchange energy between centers, which sets the same frequencies and phases of coherent atomic vibrations, as well as a certain value of the coherence length.

The spectrum of elastic vibrations of an ECC in a material can be described by equation (8), but its solutions cannot be completely analyzed. According to [41], periodic oscillations are distinguished:

.a) Harmonic vibrations. The solution x (t) has a period coinciding with the period of the perturbing force 2π / ω, and the amplitude of the oscillations depends on p and ω

.

b) Subharmonic oscillations. The solution x (t) has the smallest period 2π / p equal to the period of free oscillations of the oscillator, which is n times greater than the period of the external force 2π / pn. The frequency p = ω / n, n is any integer not equal to 1.

c) Ultragarmonic oscillations. The solution x (t) has a period of 2πm / p equal to the period of an external force. The frequency p = mω, m is any integer not equal to 1.

d) Ultrasubharmonic oscillations. The solution x (t) has a period of 2πm / p, and the external force has a period of 2πm / np, i.e. the oscillation period is n times greater than the period of external force and m times greater than the period of free vibrations, p = mω / n, n and m are integers, primes.

) в атомах с атомными номерами Z≤80 лежат между 220 мэВ для атома кислорода с Z=8 и ≈400 мэВ для атомов с Z→80. Для сравнения: наибольший квант оптических колебаний обычно не превышает 60 мэВ, наибольший квант акустических колебаний обычно не превышает 25 мэВ.In accordance with paragraph a), in addition to well-known optical and acoustic vibrations, there are harmonic vibrations in the ECC-containing crystal with frequencies of the perturbing force, i.e. with frequencies of natural (I-) nuclear vibrations. The set of these frequencies is described by the formula of a harmonic quantum 1-oscillator (6): ω (ν) = ω⋅ (1/2 + ν), where ω is the classical frequency of this oscillator, the vibrational quantum number is ν = 0, 1, 2, ... The smallest of these frequencies, ω / 2 significantly exceeds the maximum frequency of acoustic and optical vibrations. In accordance with the consistent calculated and experimental data presented in FIG. 3 elementary quanta of I-vibrations of α-type (

) in atoms with atomic numbers Z≤80 lie between 220 meV for an oxygen atom with Z = 8 and ≈400 meV for atoms with Z → 80. For comparison: the largest quantum of optical vibrations usually does not exceed 60 meV, the largest quantum of acoustic vibrations usually does not exceed 25 meV.

In accordance with paragraph b), among the elastic vibrations of the ECC-containing crystal, there are subharmonic vibrations whose frequencies are n = 2, 3, 4, ... times less than the frequency of the disturbing force ω.

In accordance with paragraph c), among the elastic vibrations of the ECC-containing crystal there are ultraharmonic vibrations, whose frequencies are m = 2, 3, 4, ... times higher than the frequency of I-oscillations ω. These frequencies are offset by ω / 2 relative to the frequencies described in paragraph a).

In accordance with paragraph d), among the elastic vibrations of the ECC-containing crystal there are ultrasubharmonic vibrations with frequencies mω / n, which for m <n can coincide with the frequencies of optical, acoustic phonons or with frequencies of I-vibrations.

With subharmonic oscillations, frequencies ω / n are possible for n = 2, 3, ..., with ultrasubharmonic oscillations, frequencies (m / n) ω are possible, for n = 2, 3, ... and m = 1, 2, ... Among these frequencies, those are important frequencies that are less than ω. Many of these frequencies fall into the spectrum of allowed phonon frequencies p. Especially important are those frequencies that coincide with the frequencies of the phonons having the highest density in the crystal. Such vibrations are effectively amplified due to the energy of natural vibrations and have the ability to propagate through the crystal, participate in electronic-vibrational transitions of the ECC, determine the physical properties of materials and the appearance of various technical effects.

Уменьшение или увеличение концентрации квантов того или иного типа колебаний вызывает установление нового динамического равновесия. В виду нелинейности уравнений движения системы ЭКЦ и когерентных областей новое динамическое равновесие может качественно и количественно описываться новыми параметрами или новыми значениями прежних параметров. Эта возможность использована в данном изобретении для увеличения длины когерентности и увеличения эффективности известного способа осуществления гиперпроводимости и сверхтеплопроводности (прототипа) [16].The ratio of the quanta of elastic vibrations of various frequencies and types at the ECC and, accordingly, in coherent regions is determined by the initial equation of motion (8). Under thermodynamically equilibrium conditions, these relations are expressed by the Gaussian distribution of the intensity of electron-vibrational transitions (16), where instead of temperatures, frequencies of harmonic elastic vibrations can be used

A decrease or increase in the concentration of quanta of a particular type of oscillation causes the establishment of a new dynamic equilibrium. In view of the nonlinearity of the equations of motion of the ECC system and coherent regions, the new dynamic equilibrium can be qualitatively and quantitatively described by new parameters or new values of the previous parameters. This opportunity was used in this invention to increase the coherence length and increase the efficiency of the known method of hyperconductivity and super thermal conductivity (prototype) [16].

и T=300 K величина Λ≅10 мкм, а размер (диаметр) области когерентности составляет 2Λ≅20 мкм. Получается, что область когерентности содержит N_cog=4πΛ³/3Ω≅2,62⋅10¹⁸ атомов. Если же

, то при этой же температуре T=300 K величина 2Λ≅16 мкм, а при

величина 2Λ≅10 мкм и область когерентности содержит примерно N_cog=2,62⋅10¹⁵ атомов. Таким образом, изменение размера области когерентности означает изменение частоты и фазы I-колебаний тысяч атомов вещества, а время изменения размера области когерентности превышает среднее время рассеяния энергии электронами (τ_е). При этом положение области когерентности в кристалле существенно не изменяется, то есть области когерентности малоподвижны. Таким образом, области когерентности характеризуются одной (общей) частотой и фазой вынужденных I-колебаний всех атомов из-за чего эти области обладают нулевым электрическим и нулевым тепловым сопротивлениями, то есть являются гиперпроводящими и сверхтеплопроводными.With respect to the coherence length under thermodynamically equilibrium conditions, we can say that in silicon with A centers at

and T = 300 K, Λ≅10 μm, and the size (diameter) of the coherence region is 2Λ≅20 μm. It turns out that the coherence region contains N _cog = 4πΛ ³ / 3Ω≅2.62⋅10 ¹⁸ atoms. If

, then at the same temperature T = 300 K the quantity 2Λ≅16 μm, and at

2Λ≅10 μm in size and the coherence region contains approximately N _cog = 2.62 1510 ¹⁵ atoms. Thus, a change in the size of the coherence region means a change in the frequency and phase of the I-oscillations of thousands of atoms of a substance, and the time for changing the size of the coherence region exceeds the average time of energy dissipation by electrons (τ _е ). In this case, the position of the coherence region in the crystal does not substantially change, i.e., the coherence regions are inactive. Thus, coherence regions are characterized by one (common) frequency and phase of forced I-vibrations of all atoms, which is why these regions have zero electrical and zero thermal resistances, that is, they are hyperconducting and super thermal conducting.

The structure of the hyperconductor seems to be such that separate coherence regions with zero electrical and thermal resistance are placed in the bulk of the material and separated from each other by ordinary material (material in a normal, normal state).

In other words, each pair of coherent regions is a coherent heterostructure, and the material is filled with a system of such coherent heterostructures. Coherent heterostructures were not previously known and are a new type of heterostructures.

Two types of coherent heterostructures can be distinguished. One type of coherent heterostructures is synchronous heterostructures in which coherent regions have the same frequencies, but different and differ by a constant value of the oscillation phase. Another type of coherent heterostructures is asynchronous heterostructures in which coherent regions have different vibration frequencies.

The distance between the coherent regions closest to each other can take values from the interatomic distance in the material to tens and hundreds of microns and, depending on external conditions, vary within these limits. The electrical and thermal resistance of the material as a whole is determined by the resistance of the material outside the coherence regions and is caused by the known mechanisms of scattering of charge carriers, as well as possible additional scattering at the boundaries of the coherence regions and at the electrical contacts to the material, that is, at the boundary of the material and current electrodes 1 and 2, if the thickness of the material separating the coherent regions exceeds the mean free path of the electrons. If the thickness of the material that separates the coherent regions is tunnel thin, then effects similar to the Josephson effects are possible, affecting the electrical and thermal properties of each heterostructure and the material as a whole. So, in synchronous coherent heterostructures with tunneling small distances between coherent regions, an analogue of the stationary Josephson effect in the form of a constant electric current or in the form of a constant electric voltage between coherent regions is possible. The polarity of the current and voltage of an analogue of the Josephson effect in a hyperconductor heterostructure, as well as the Josephson effect in a superconductor heterostructure, are determined by the phase difference of oscillations on both sides of the tunnel thin layer, which is constant in synchronous coherent heterostructures. The oscillation frequencies of coherent regions in asynchronous coherent heterostructures are different. In such structures, a continuous change in the relative value of the oscillation phases occurs. Due to the continuous periodic alternating change in the relative phases of the oscillations of the coherent regions, it is possible to analogue the high-frequency non-stationary Josephson effect in the form of a high-frequency electric current in the material or voltage between the coherent regions.

The maximum size of the coherent region (2Λ _max ) under thermodynamically equilibrium conditions is largely determined by the vibrational energy E _{count of the} coherent region, which, as we have seen, can be larger in semiconductors with a larger band gap. So in materials with E _g ≈2 eV, E _count ≥2 eV is possible. Then at room temperature 2Λ _max ≈18 μm, and at 200 K the value 2Λ _max ≈27 ... 30 μm. Therefore, coherent regions in typical semiconductors near room temperature can have sizes in the approximate range of 15 to 30 microns. So in silicon at a room temperature 2Λ _max is approximately 20 microns.

It is not possible to realize hyperconductivity and superconductivity in the material between the electrodes using the prototype at large distances between the electrodes 1 and 2. Since the prototype did not take measures to remove excess vibrational energy from the material and the necessary increase in the coherence length to Λ≥D / 4 is impossible, then zero material resistance between the electrodes cannot be achieved. But even in such conditions, the electron-vibrational energy levels of the coherent regions are manifested in the temperature dependences of the electrical resistance of the material as deep energy levels, in the form of resistance activation energies, and are consistent with dependence (6).

In FIG. 12 shows a typical temperature dependence of the electrical resistance of the material between electrodes 1 and 2 at D = 50 μm, measured on a germanium sample with almost intrinsic conductivity without removing excess vibrational energy, as in the prototype, and not reaching zero. In the inset of FIG. 12 shows a plot of this dependence at high temperatures. This dependence contains sections marked by tangent arrows to the curve, with the following resistance activation energies: 0.22 eV; 0.55 eV; 0.68 eV, 0.77 eV, 1.1 eV; 1.65 eV; 22.2 eV and 194.65 eV, of which the last five activation energies exceed the band gap of the material (≈0.68 eV). The activation energies less than the band gap of the material are explained by the presence of ECC and coherent regions in the material, including impurity oxygen atoms with an elementary quantum of I-vibrations E _Z = E ₈ = 0.22 eV and participating in vibrations with energies coinciding with the calculated energies by the formula ( 6). These oscillations are excited by reducing the potential energy of the electrons localized at these levels. However, activation energies significantly and many times greater than the band gap of the material cannot be explained by recombination processes. Such resistance activation energies represent a fundamentally new process of increasing the size of coherent regions, which precedes the transition of the material between the electrodes into the hyperconducting state. In the inset of FIG. 12 shows a high-temperature portion of this dependence, from which it can be seen that the resistance of the material between the electrodes does not reach zero, i.e. hyperconductivity and superconductivity are not implemented in this case.

In FIG. Figure 13 shows a typical temperature dependence of the electrical resistance of a material between electrodes in a GaAs-based sample, D = 20 μm. The upper curve was measured when the sample was heated, and the lower curve was measured when the sample was cooled. In this case, as in samples based on a number of other semiconductors, resistance activation energies characteristic of the ECC are manifested, many times exceeding the band gap of the semiconductor. However, a zero resistance value of the material between the electrodes is not reached, and upon further heating, the resistance reaches a certain minimum non-zero value and then increases with temperature, i.e. hyperconductivity and super thermal conductivity in the material between the electrodes in this case are not realized.

In FIG. 14 shows the temperature dependence of the electrical resistance (R) characteristic of silicon-based samples, measured in accordance with the prototype and also not reaching zero resistance value.

These data, presented in figures 12, 13, 14, demonstrate the limited capabilities of the prototype, the low efficiency of the prototype, which does not provide reliable implementation of hyperconductivity and superconductivity even at relatively small distances between the electrodes. This limitation of the prototype is determined by the fact that excess vibrational energy is not derived from the material and thereby limits the increase in the size of the coherent region, Λ.

If, however, excess vibrational energy is removed from the material between the electrodes, for example, by a high-frequency or microwave method, as proposed in the claimed invention, then it is possible to achieve high electrical and zero thermal resistance of the material between the electrodes even with significantly greater distances between electrodes 1 and 2, than in the prototype even when heating the material from relatively high temperatures, in particular from near-room temperatures. Thus, in the claimed invention provides an effective implementation of hyperconductivity and superconductivity, which corresponds to the purpose of the claimed invention.

To item 1 of the formula. In the publications preceding the prototype of the invention and in the prototype it is shown that hyperconductivity and super thermal conductivity can be implemented in the material between the electrodes as a result of introducing the ECC into the material in a concentration from N _min = 2⋅10 ¹² cm ^-3 to N _max = 6⋅10 ¹⁷ cm ^{- 3} . On the other hand, in the material near the rectifying contact, for example, near the surface, near the border with another material, near the Schottky contact, ECCs arise and exist with a volume concentration of 2⋅10 ¹⁴ cm ^-3 to 6⋅10 ¹⁵ cm ^-3 in various semiconductors . These concentration values fall into the indicated acceptable range from N _min = 2⋅10 ¹² cm ^-3 to N _max = 6⋅10 ¹⁷ cm ^-3 . In semiconductor rectifying contacts, ECCs arise regardless of our will and desire, due to the violation of the regular structure of the material near the contact with another material. Therefore, there is no feasibility and necessity, as in the prototype, to additionally introduce ECC into the material, using these or those technological processes. If a rectifying contact is used, a concentration of ECC sufficient to achieve the purpose of the invention will occur in the material near the contact. Therefore, unlike the prototype, in paragraph 1 of the claims of the claimed invention, the process of introducing an ECC into the material is not provided.

As the electrodes 1 and 2, it is possible to use "clamping" electrodes, probes forming rectifying contacts with the material, and thereby simplify the method. Indeed, the use of pressure electrodes is not associated with the use, for example, of thermal spraying of metals in vacuum. At the same time, in the material near the contact of the pressing electrode with the material, as well as near the material deposited on the surface or in the bulk of the material, local states of electronic-vibrational nature, ECC, arise. Therefore, there is a potential barrier in the metal – semiconductor contacts, the height of which is determined by the empirical “1/3 rule” [47], precisely due to the ECC arising in the material near the contact. Near such rectifying contacts, the ECC concentration is usually from 2 от10 ¹⁴ cm ^-3 to 6⋅10 ¹⁵ cm ^-3 , which is quite enough for the implementation of the claimed invention. It turns out that there is no need to strive, as is done in traditional adiabatic semiconductor electronics, to reduce the "density of surface electronic states" using sophisticated technological methods. Acceptable for the implementation of the present invention, the concentration range of ECC is quite large. Such centers in the materials near the contacts are sufficient for the implementation of the invention. Moreover, for the purposes of this invention, there are no special requirements for preparing the surface of the material before placing the electrodes, for example, pressure electrodes or probes, or before spraying metal electrodes. Experiments performed on various semiconductors have shown that electrodes can be placed on clean, polished or polished surfaces. This greatly simplifies the preparation of semiconductor samples for the implementation of the claimed invention. Such a simplification is generally characteristic of the non-adiabatic semiconductor electronics to which this invention relates, in contrast to traditional adiabatic electronics, in which it is technologically necessary to provide theoretically determined limit values of technical parameters, for example, small values of “density of surface states”.

In the material near the electrodes, due to the interaction between individual ECCs and the atoms of the material spontaneously, spontaneously appear and exist coherence regions of small size 4Λ <D. These coherent regions are hyperconducting and super heat conducting regions of the material. In other words, hyperconductivity and superconductivity in the material near the electrodes arise spontaneously, spontaneously and exist as a result of the interaction of forced I-vibrations of the ECC and the atoms of the main substance in limited areas of the material, within coherent regions. However, coherent regions do not usually occupy all of the material between the electrodes. In this regard, the technical task of the prototype and the claimed invention is to increase the size of the coherent regions to ensure that the material overlaps with one coherent region along the entire length between the electrodes. In this case, the hyperconductivity and superconductivity in the material between the electrodes will be realized, i.e. the objective of the invention will be achieved. The increase in the coherence length Λ in the prototype is carried out in one way, by heating the material to temperatures T≥T _h . However, the capabilities of the prototype are limited for several reasons:

- the possibility of increasing the coherence length Λ due to an increase in the material temperature T is limited, which can be seen from formula (13). Indeed, an increase in vibrational energy E _count slows down or ceases with an increase in T, and a factor of 1 / T makes it possible to increase Λ only when T increases to a certain critical temperature (T ₂ ) exceeding which causes a decrease in Λ and an increase in the resistance of the material between the electrodes;

- the electric current flowing in the material between the electrodes when measuring electrical resistance is an electronic-vibrational current consisting of electrons and the associated I-vibrations of atomic nuclei and phonons. When this current flows, not only the electric charges of the electrons are spatially transferred, but also the I-vibrations of the atomic nuclei and phonons, i.e. heat. As a result of this current, an "ohmic voltage drop" occurs in the material between the coherent regions, as well as a temperature difference between the coherent regions and, as a result, a differential thermoEMF occurs in the material layer between the coherent regions, the polarity of which is opposite to the polarity of the "ohmic voltage drop". It should be borne in mind that differential thermoEMF includes electron drag by phonons (UEF), which is amplified many times in the vicinity of Debye temperatures T _m ;

- the thickness of the layer of material between the coherent regions with increasing temperature can become tunnel thin. As a result, analogues of the stationary and non-stationary high-frequency Josephson effects become possible, which, together with the "ohmic voltage drop" and thermoEMF, create various conditions for the transition to hyperconductivity.

The listed features determine the nonlinear nature of the transition to hyperconductivity and superconductivity of the material between the electrodes. In addition, coherent regions formed near various electrodes and approaching upon heating generally have different vibrational phases. With the formation of hyperconductivity and superconductivity between the electrodes, these coherent regions should merge into one coherent region with a new phase of I-oscillations. The hyperconducting transition is similar to the scattering of one coherent region by another coherent region and proceeds with the release, scattering of "excess" vibrational energy into the surrounding material. The magnitude of this "excess" energy is approximately equal to the vibrational energy of one coherent region. In connection with these features, the following are relevant:

- removal of "excess" vibrational energy from the material and

- external influences on the material in the form of changes in the heating rate, changes in the electric or magnetic field.

These effects stimulate the restructuring of coherent regions and their merging into one coherent region, which corresponds to lower vibrational energy and, accordingly, greater stability of such a dynamic state of the material.

The formation of one coherent region, closing the electrodes 1 and 2, is facilitated by the use of a single retarding device associated with all the material between the electrodes. In this case, the I-vibrations in all parts of the material will be of the same type, with the same vibrational quanta, and the field of the moderator will help to synchronize the polarization, frequency and phase of vibrations in the material between the electrodes, which corresponds to the coherent state and the implementation of hyperconductivity and superconductivity in the material between the electrodes.

Of the two contacts 1 and 2, it is possible to use one rectifying contact, and the second non-rectifying contact and choose the distance between the electrodes B≤2Λ. In this case, coherent regions arise only near the rectifying contact, and the second non-rectifying contact does not prevent the propagation of the coherent region from the first contact to the second and thereby contributes to the realization of hyperconductivity and superconductivity in the material between the electrodes.

, где с - скорость света в вакууме, ε - относительная диэлектрическая проницаемость материала, F - характерная резонансная частота замедляющего устройства.An increase in the size (2Λ) of the coherence region occurs due to the addition of neighboring material atoms, the total vibrational energy of which decreases. It is proposed to reduce the vibrational energy of these atoms using an RF or microwave electromagnetic field that exists in the material due to oscillations of electric charges. It is desirable to remove the energy of such an electromagnetic field from the material into the external environment. Overcoming the external boundary of the material with the RF and microwave fields, the current is partially reflected, due to which part of the RF and microwave energy returns from the boundary back to the material. To reduce the electromagnetic power returned to the material, which is released when the coherence region increases, the characteristic size of the contact area of each electrode with the material is chosen no more than a quarter of the length of the RF or microwave waves in the material

where c is the speed of light in vacuum, ε is the relative permittivity of the material, F is the characteristic resonant frequency of the moderator.

, для θ обычно лежащих между 2 K и 6 K в различных полупроводниках с известными ЭКЦ в таких материалах. Из этого следует также, что нагревание материала между электродами при осуществлении гиперпроводимости и сверхтеплопроводности можно начинать с соответствующих минимальных температур. Минимальные значения длины когерентности при низких температурах в термодинамически равновесных условиях могут составлять десятки ангстрем. Нагревание материала выше минимальной температуры вызывает увеличение колебательной энергии и, несмотря на содержащуюся в (13) обратную температурную зависимость, длина когерентности увеличивается до определенного предела. Например, в кремнии (Z=14) при комнатной температуре величина 2Λ может достигать 20 микрон, а в германии (Z=32) она больше чем в кремнии почти в b раз. Согласно (14, 15)Hyperconductivity and superconductivity of the material between the electrodes are possible when the size of two coherence regions located near contacts 1 and 2 becomes equal to the distance between the electrodes or exceeds it when 4Λ≥D, and the coherence regions occupy all the material between the electrodes, electrically connect them to each other . From formula (13) it can be seen that an increase in Λ is possible if the vibrational energy E _count exceeds a certain minimum value

, for θ usually lying between 2 K and 6 K in various semiconductors with known ECC in such materials. It also follows from this that the heating of the material between the electrodes during the implementation of hyperconductivity and super thermal conductivity can begin with the corresponding minimum temperatures. The minimum values of the coherence length at low temperatures in thermodynamically equilibrium conditions can be tens of angstroms. Heating the material above the minimum temperature causes an increase in vibrational energy and, despite the inverse temperature dependence contained in (13), the coherence length increases to a certain limit. For example, in silicon (Z = 14) at room temperature, 2Λ can reach 20 microns, and in Germany (Z = 32) it is almost b times more than in silicon. According to (14, 15)

- эффективные массы носителей зарядов в образованных этими атомами материалах. Поэтому в материалах, состоящих из многоэлектронных атомов с большими атомными номерами и с большими эффективными массами основных носителей зарядов можно ожидать значительно больших значений длины когерентности при одинаковых температурах.where M _Z1 and M _Z2 are the masses of the nuclei of the atoms of the basic substance with atomic numbers Z ₁ and Z ₂ , and

- effective masses of charge carriers in the materials formed by these atoms. Therefore, in materials consisting of many-electron atoms with large atomic numbers and with large effective masses of the main charge carriers, significantly larger values of the coherence length at the same temperatures can be expected.

. Этот шаровой слой окружает сферическую когерентную область с радиусом Λ. Увеличение Λ по мере увеличения Е_кол при повышении температуры характеризуется переходом значительного числа расположенных вблизи когерентной области атомов из колебательного состояния с произвольной частотой и фазой гармонических собственных I-колебаний в колебательное состояние с общей частотой и фазой, в состояние когерентных I-колебаний. Такой переход к когерентным колебаниям дополнительно требует рассеяния избыточной энергии некогерентных колебаний. Действительно, колебательная энергия N атомов осуществляющих независимые 1-колебания с различными фазами за пределами когерентной области близка к сумме колебательных энергий этих атомов

. С другой стороны в составе когерентной области все атомы имеют общую колебательную энергию

. Поскольку число присоединяющихся к когерентной области атомов может достигать нескольких тысяч, то оказывается, что при увеличении размеров области когерентности необходимо рассеять значительную колебательную энергию, примерно равную

.This result is true if the material contains free, non-interacting with each other, with boundaries and other inhomogeneities of the material coherent regions. The volume of material in which the energy of coherent oscillations of the isolated coherent region is dissipated has the shape of a spherical layer with a thickness

. This spherical layer surrounds a spherical coherent region with radius Λ. An increase in Λ with increasing E _count with increasing temperature is characterized by the transition of a significant number of atoms located near the coherent region from the vibrational state with an arbitrary frequency and phase of harmonic intrinsic I-vibrations to the vibrational state with a common frequency and phase, into the state of coherent I-vibrations. Such a transition to coherent oscillations additionally requires the dissipation of excess energy of incoherent oscillations. Indeed, the vibrational energy of N atoms performing independent 1-oscillations with different phases outside the coherent region is close to the sum of the vibrational energies of these atoms

. On the other hand, in the composition of the coherent region, all atoms have a common vibrational energy

. Since the number of atoms joining the coherent region can reach several thousand, it turns out that with an increase in the size of the coherence region, it is necessary to dissipate a significant vibrational energy, approximately equal to

.

The scattering of excess energy of incoherent oscillations outside the coherent region can be partially provided by an increase in the energy dissipation volume with an increase in Λ. However, it should be taken into account that the volume of the coherent region and the corresponding number of coherently oscillating atoms increases in proportion to Λ ³ , and the scattering volume of vibrational energy increases “more slowly”, in proportion to Λ ² . Therefore, the possibility of increasing the scattering of excess energy of incoherent vibrations joining the coherent vibrations of atoms is limited. In addition, under real conditions, an increase in Λ leads to the approach of various coherent regions to each other and to a corresponding decrease in those volumes of material in which vibrational energy can be dissipated outside the limits of coherence regions. This leads to a limitation of the dissipated power of the oscillations and even to its reduction. Correspondingly, saturation of an increase in Λ sets in and even a decrease in Λ is possible, in particular, due to the inverse temperature dependence (14).

Thus, when the material is heated above the minimum temperature (≈1.5 K), the following processes occur in it:

1i. An increase in vibrational energy and a corresponding increase in the length of coherence;

2i. Reduced coherence length due to the inverse temperature dependence of the energy dissipation length;

3i. The convergence of the frequencies and phases of oscillations of the atoms of the coherent region and the atoms joining this region, an increase in the coherent region, an increase in the length of coherence;

4i. The scattering of excess vibrational energy of atoms passing into a state of coherent vibrations.

Processes 1i and 2i have opposite trends, they “compete” with each other, are determined by microscopic processes, which practically leave us no opportunity to influence the change in the coherence length, and to regulate the coherence length due to changes in the conditions external to the material. The change in vibrational energy corresponding to process 1i causes a change in the coherence length against the background of a monotonic dependence (T ^-1 ) corresponding to process 2i. The competition of processes 1i and 2i causes stepwise temperature dependences of the coherence length and sizes of coherent regions, as well as hysteresis phenomena in the temperature dependences of the electric and thermal resistance of the material between the electrodes due to the discreteness and quantization of I-oscillations.

Process 3i is described by formulas (9-12), which take into account the interaction between ECCs participating in harmonic vibrations with different frequencies and phases. The interaction, the exchange of phonons between the coherent region and the atoms surrounding it creates forced vibrations of all atoms at the same frequency and with a certain phase, which is necessary for the atoms to join the coherence region. The processes of establishing the same forced frequencies and the same oscillation phases occur spontaneously, according to the solutions of the equation of motion. We are able to intensify this process using the HF and (or) the microwave method of removing vibrational energy from the material between the electrodes. For this, a coordinated electromagnetic connection is established between the electrodes with an oscillatory circuit, a resonator, a waveguide, a strip line, or with another slowing down, resonant device (with other slowing down, resonant devices) with a Q factor. Under such conditions, oscillations of the electric charges of the coherent region excite variable electric ( High-frequency or microwave) currents in a moderator associated with the material, amplifying them by a factor of Q at the resonant frequency of the moderator. The flow of these currents is associated with the dissipation of energy in the form of Joule heat in the moderator, as well as in the load of the moderator. The RF or microwave energy dissipated in the moderator is supplied from the material between the electrodes via a coordinated electromagnetic coupling. Thus, the energy of incoherent I-oscillations is derived from the material, which provides an increase in the coherence length and is consistent with the purpose of the invention.

The electric fields arising in the moderator under the influence of oscillations of electric charges in the material act on the material. In the material, they perform the function of a coercive effect on the vibrations of all atoms, contribute to the appearance and existence of their forced vibrations with the same frequency and common phase according to (9-12), that is, they synchronize I-vibrations, which is necessary to increase the coherence length and achieve the purpose of the invention . In order for this process to be effective, the resonant frequency of the oscillatory circuit, resonator, and other moderator associated with the material is selected in the frequency range of phonons that ensure the interaction of atomic vibrations, namely in the frequency range from 10 ⁶ Hz to 3 × 10 ¹⁵ Hz.

This process can be used to increase the coherence length only in conjunction with process 4i, since the transition from atomic vibrations with an arbitrary phase to vibrations with the same phase, the transition to coherent vibrations is possible with a decrease in the total energy of atomic vibrations joining the coherent region.

Process 4i can be influenced externally and can be used to control the coherence length by changing external conditions regarding the material between the electrodes. The radiative mechanism (with the emission of electromagnetic quanta) of energy dissipation of incoherent vibrations of atoms joining coherent regions is unlikely and inefficient due to the strong coupling of electrons with phonons. Therefore, the processes of energy dissipation involving phonons associated with electrons remain important. Electrons associated with phonons oscillate at the phonon frequencies and create the corresponding alternating electric fields in the material, generally speaking, with various arbitrary phases. These fields excite electrical vibrations in coupled and matched with the material slowing devices due to the energy coming from the material. This ensures the removal of vibrational energy from the material into slowing devices.

The electric vibrations excited in the moderators associated with the material near their resonant frequency are amplified by about Q >> 1 times and turn out to be in relation to the material as an external influence, which performs a synchronizing role according to formulas (9-12). As a result, the I-vibrations of many atoms become coherent; such atoms attach to the coherent regions, increasing their size and coherence length Λ.

Two processes (3i and 4i) for synchronizing vibration frequencies and energy removal of incoherent oscillations in the claimed invention are performed by a contact or non-contact high-frequency method. To do this, establish a coordinated electromagnetic connection of the material between the electrodes with a coaxial line, a waveguide line, a strip line, loaded on matched loads, with a resonator, an oscillatory circuit or other (other) decelerating (decelerating) device (s), (for example, with optical microresonators [ 48]), having high Q factors and resonant frequencies in the range from 10 ⁶ Hz to 3⋅10 ¹⁵ Hz. Under such conditions, the vibrational energy of the electrons associated with the phonons is expended to create electrical vibrations and waves in the above devices and dissipated in these devices in the form of Joule losses or in their load. On the other hand, electrical vibrations in these slowing down devices have a synchronizing effect on I-vibrations in the material, ensuring their monochromaticity and coherence. Thus, using slowing devices with a Q factor of Q≥10, two main tasks are achieved:

- synchronization of frequencies and phases of I-oscillations;

- removal of vibrational energy from the material between the electrodes.

Actually, I-oscillators are characterized by a parabolic relationship between the energy and displacements of atomic nuclei in the atoms or ions of the material. In this regard, ECC and coherence are almost ideal frequency converters of electrical and acoustic signals. Their oscillations obey the dependences a, b, c and d (see page 33), which describe the frequencies of harmonic, subharmonic, ultraharmonic and ultrasubharmonic oscillations. At any resonant frequency of the moderator in the specified range, there are always values of arbitrary numbers such that the converted frequency falls into the passband of the moderator. This ensures the removal of vibrational energy from the material to the retarding device, increasing the coherence length, which ultimately corresponds to the purpose of the invention.

, где Р_полная - мощность электрических колебаний в контуре, Р_потерь - мощность потерь в контуре. С одной стороны, Р_потерь=(Р_полная/Q). С другой стороны, в стационарных условиях Р_потерь равна энергии, поступающей из материала между электродами, которую можно записать как G⋅Ω_ген⋅δ⋅E^*, где G - скорость рекомбинации носителей зарядов, генерирующих I-колебания в объеме материала (Ω_ген), δ - доля колебательной энергии, рассеиваемая электроном за один акт рассеяния, Е^* - энергия колебаний, возникающих в одном акте рекомбинации. Приравняв эти энергии приходим к условию δ⋅Q=P_полн/(G⋅Ω_ген⋅E^*)=1, поскольку вся мощность генерируемых колебаний должна быть рассеяна. Учитывая типичное значение δ≈(10^-1…10^-2), получаем условие Q≥10.In FIG. 15 schematically shows the non-contact connection of the material between the electrodes to the oscillatory circuit, consisting of electrodes 3 and 4, providing capacitive coupling of the material with the oscillatory circuit, including inductance 5. Quality factor of the oscillatory circuit

where P _full is the power of electrical oscillations in the circuit, P _losses is the power of losses in the circuit. On the one hand, P _loss = (P _full / Q). On the other hand, under stationary conditions P the _loss is equal to the energy coming from the material between the electrodes, which can be written as G⋅Ω _gene ⋅δ⋅E ^* , where G is the recombination rate of charge carriers generating I-oscillations in the bulk of the material (Ω _gene ), δ is the fraction of vibrational energy dissipated by the electron in one act of scattering, E ^* is the energy of vibrations arising in one act of recombination. Equating these energies, we arrive at the condition δ⋅Q = P _full / (G⋅Ω _gene ⋅E ^* ) = 1, since all the power of the generated oscillations must be dissipated. Given the typical value of δ≈ (10 ^-1 ... 10 ^-2 ), we obtain the condition Q≥10.

To remove excess vibrational energy from the material between the electrodes, you can place a sample of the material between the plates of the capacitor included in the oscillatory circuit, include the sample in a long, for example, strip or coaxial line, or place the sample in a microwave resonator or waveguide.

External electromagnetic and acoustic radiation, magnetic fields affect the value of the coherence length and the value of T _h . Therefore, materials between the rectifying electrodes exhibiting hyperconducting transitions can be used as contactless breakers, relays, and electric and thermal current switches that do not have moving mechanical parts controlled by external radiation and magnetic fields. Conversely, they can be used as sensors sensitive to the action of external radiation and magnetic fields.

An experimental verification of the invention showed a close to 100% efficiency, the output of devices based on various semiconductors (Ge, Si, GaAs, InAs, InSb, CdHgTe,), demonstrating a transition to the state of hyperconductivity and superhumidity at reaching and exceeding the corresponding temperatures T _h , (T _h ≤T≤T ^* ).

To paragraph 2 of the formula. It is advisable to start heating the samples from temperatures ≈1.5 K, since this ensures a decrease in the instability of the resistance of materials when heated to the temperature of the hyperconducting transition, facilitates the accelerated formation of the dominant mode of I-vibrations, decreases the temperatures of the hyperconducting transition, and narrows the temperature range in which such a transition occurs and the expansion of the temperature range of the existence of hyperconductivity and superconductivity (T _h , T ^* ), i.e. to a decrease in T _h and an increase in T ^* .

From FIG. 7 it can be seen that when the ECC concentration in the claimed invention is from 2⋅10 ¹⁴ cm ^-3 to 6⋅10 ¹⁵ cm ^-3 , the temperature range for the purpose of the invention is significantly narrowed, but this only applies to the conditions of the prototype, when vibrational energy is not removed from material. Unlike the prototype, the claimed invention uses a high-frequency or microwave method of energy removal from the material between the electrodes, which allows to expand the temperature range of the implementation of the hyperconducting transition. Moreover, even if you start heating the samples not from temperatures ≈1.5 K, but from higher temperatures, for example, near room temperature, you can carry out hyperconductivity and super thermal conductivity, achieving the goal of the invention with high efficiency due to the high-frequency method of removing excess material from the material vibrational energy.

Experiments with various semiconductors have shown that in such cases the transition to hyperconductivity and superconductivity usually turns out to be smoother, occupies a wider temperature interval, and upon further heating of the samples under certain conditions, such states can be destroyed due to a decrease in Λ according to the inverse temperature dependence (13 )

In FIG. 16 shows the temperature dependences of the electrical resistance of gallium arsenide, measured at various distances D = 10; 20 and 40 microns between the electrodes 1 and 2 under conditions of removal of vibrational energy using vibrational loops. In the inset of FIG. 16 schematically shows the connection of oscillatory circuits with leads for connection to measuring equipment. Vibration circuits contain an inductive element 5 and a capacitive element with a dielectric layer in the form of a sapphire plate, have resonant frequencies in the range from 8 GHz to 10 GHz. The temperatures of the hyperconducting transitions (T _h ) in the figure are indicated by vertical arrows. For each curve, the distances between the electrodes in microns (10 μm, 20 μm and 40 μm) are indicated. Presented in FIG. 16 curves show a characteristic tendency to increase T _h with increasing D, which corresponds to the ideas about the formation of hyperconductivity and super thermal conductivity in the material between the electrodes.

In FIG. Figure 17 shows the characteristic temperature dependence of the electrical resistance of the material between the electrodes (D = 50 μm) in a germanium-based sample with almost intrinsic conductivity, when the material is electromagnetically coupled to an oscillatory circuit connected to the material near one electrode. The upper curve 6 in FIG. 17 corresponds to heating, and the bottom curve 7 corresponds to cooling of the sample. In the approximate temperature range from 325 K to 425 K, an instability of the resistance value is observed on the upper curve, which is also characteristic of samples based on various semiconductors when heated from room temperature. From FIG. 17 it can be seen that as the sample is heated, the resistance of the material between the electrodes reaches zero at a temperature of 474.5 K, i.e. at this temperature, hyperconductivity is achieved, which corresponds to the purpose of the claimed invention. When the sample is cooled, hyperconductivity persists to 449.6 K. Hyperconductivity is accompanied by super thermal conductivity. The temperature dependence of the thermal resistance R _{T of} the same germanium sample is shown in FIG. 18 by curves 8 and 9. In the temperature dependence of electric and thermal resistances, “hysteresis” is observed, when the sample is cooled, zero values of electric and thermal resistances differ from the corresponding temperatures measured when the sample was heated, which is due to the nonlinearity of the electron-vibrational processes in the material. When this sample is heated (Fig. 18), the thermal resistance vanishes at temperatures above 466 K, and when cooled, it disappears at 450.4 K.

Nonlinear dependences of the coherence length Λ on temperature T and on vibrational energy E _count , which also depends on T, manifest themselves as “hysteretic” features of the temperature dependences of the electrical and thermal resistances of hyperconductors (as can be seen from Figs. 17 and 18) and often cause spontaneous vibrational processes, “instabilities” of resistances due to the simultaneous participation of several modes of elastic vibrations in the formation of coherent regions when heated from room temperature. If the heating of samples begins at low temperatures, then the "instabilities" are weakened and the transition to the hyperconducting state takes a shorter temperature range.

The instability of resistance during heating of the samples and the instability of the temperature of the samples are enhanced if excess vibrational energy is not removed from the material and if the temperature of the sample is not stabilized. These results correspond to the notions of nonlinear electron-phonon interactions at the ECC in hyperconductors.

The prototype [16] allows hyperconductivity and super thermal conductivity in a silicon material between electrodes spaced no more than D = 20 μm apart when heated from low temperatures. In contrast to the prototype, the claimed method allows to achieve the objective of the invention at high D values even when heated from room temperature. In FIG. Figure 19 shows the characteristic temperature dependence of the electrical resistance of a silicon material between electrodes at D = 22 μm, from which it can be seen that when a sample is heated from room temperature due to an increase in the coherence length Λ, its electrical resistance decreases to zero at a temperature T ₁ = T _h = 459 K and in the material between electrodes 1 and 2, hyperconductivity and super thermal conductivity are realized. Upon further heating of the sample to a temperature of T ₂ = 469 K, hyperconductivity and super thermal conductivity are maintained in the material between the electrodes. An increase in temperature from T ₁ to T ₂ causes an increase in the coherence length and and 4Λ≥D. With further heating, Λ decreases to 4Λ≤D and, accordingly, the hyperconductivity and super thermal conductivity in the material between the electrodes are destroyed. Heating the sample above T ₂ corresponds to a decrease in Λ. In accordance with formulas (13-15) at temperatures in the vicinity of above T _2, we can write approximately Λ = Λ ₀ / Т, where Λ _{0 is a} temperature-independent quantity, and at T> T _{2 the} temperature change in the coherence length (ΔΛ) follows the dependence ( 1 / T-1 / T ₂ ). The quantity ΔΛ represents the thickness of the material layer increasing with temperature, located between the coherent regions. This layer is in a normal, non-conductive state. Ohm's law is true in this layer, and therefore the value of the electrical resistance of the material between the electrodes approximately follows the dependence R (T) = R ₀ (1 / T ₂ -1 / T), where R ₀ is independent of temperature T. This formula satisfactorily describes the observed the increase in electrical resistance of the material between the electrodes 1 and 2 when the temperature T _{2 is} exceeded.

The temperature dependences of the material resistance between the electrodes in InP-based samples have the same features. The characteristic temperature dependence of the electrical resistance of the material between the electrodes (D = 40 μm) is shown in FIG. 20 where the upper curve is measured with heating, and the lower curve with cooling of the sample. Zero resistance when heated is achieved between temperatures T ₁ = T _h = 540 K and T ₂ = 542 K, and when cooled, zero resistance is maintained between temperatures 542 K and 482 K.

Identical temperature dependences exhibit various semiconductor materials between the rectifying electrodes. Thus, it can be seen that the temperature range of the existence of hyperconductivity and superconductivity in the materials between the electrodes substantially depends on the distance between the electrodes D. When D decreases, the temperature T ₁ = T _h decreases, and the temperature T ₂ increases and can exceed the melting temperature of the material or electrodes if start heating from low temperatures. An increase in D leads to a convergence of the temperatures T _h and T ^* , to a narrowing or disappearance of the temperature interval (T ^* -T _h ), which generally makes hyperconductivity and superconductivity impossible.

The implementation of hyperconductivity and superthermal conductivity at large D values is facilitated by any means of increasing the coherence length Λ. Some methods for increasing Λ and controlling the value of Λ are contained in the claimed invention. If the value of D is close to 4Λ, then upon heating the samples, the electric and thermal resistances of the material between the electrodes are significantly reduced, and the voltage drop in the material between the electrodes 1 and 2 also decreases, caused by the charge carrier current flowing from an external source when measuring resistance. However, the flowing electric current is associated with the flow of I-oscillations and phonons through electron-phonon interaction, which change the temperature of materials near the electrodes. As a result, in the material between the electrodes 1 and 2, a gradient of temperature and thermoEMF, UEF appears, which can be comparable in magnitude with the voltage drop in the material from the current of an external source or exceed it. In addition, the distance between the coherent regions (d = D-4Λ) when the material is heated to high temperatures becomes thin enough to tunnel the electrons between the coherent regions and analogs of the Josephson effects arise, the magnitude and polarity of which are determined by the ratio of the phases of the oscillations of the coherent regions. Therefore, due to the superposition of the ohmic voltage drop, stresses from thermoEMF and UEF and from analogs of Josephson effects in the material between coherent regions near the transition temperature to hyperconductivity, nonlinear behavior of the current-voltage characteristics of the samples and their temperature dependences is possible.

In particular, the cessation of heating of the samples enhances the dispersion of vibrational, thermal energy from the coherent regions and a corresponding increase in the coherence length, resulting in the appearance of hyperconductivity and superconductivity in the material between the electrodes, as shown by the example of the germanium sample in FIG. 21.

Under conditions of strong electron-phonon interaction, thermoEMF together with analogues of Josephson effects can exceed the voltage drop created by the flowing electric current in the material and then a negative electrical resistance arises in the material between electrodes 1 and 2, which can be seen from the temperature dependence of the resistance of the germanium sample presented on FIG. 22. The measured negative resistance and the corresponding electric current arise and exists due to the vibrational, thermal energy of the coherent regions in the material and is maintained as long as there is a sufficient temperature gradient in the material between the coherent regions. The lifetime of the negative resistance is determined by the time of dispersion of the vibrational energy by the coherent regions and the approximation of the temperatures of the coherent regions. From FIG. 22 shows that this time can be tens of seconds. Negative resistance reaches its maximum value if the transition temperature to hyperconductivity T _h is close to any of the Debye temperatures of the phonons of the material T _m or lies in the interval (T _m ± 3θ), where the thermoEMF, namely its component - electron drag by phonons (UEF), turns out to be maximum.

It is known that negative electrical resistance arises in materials in a nonequilibrium state, in nonequilibrium systems [49].

In our case, negative electrical resistance in samples with strong electron-phonon interaction is manifested due to the spatial, intercenter transfer of I-vibrations, electrons and phonons, accompanied by the appearance of a temperature gradient, thermoEMF (UEF) and analogues of Josephson effects. It should be noted that if the electrical resistance of a material becomes negative under the influence of thermoEMF, then the thermal resistance of the material changes its polarity. As a result of stabilization of zero electrical resistance, hyperconductivity and super-thermal conductivity, the gradients of the electric potential and the temperature gradients disappear in the material between the electrodes. Negative electrical resistance (if it existed) also disappears, stationary zero values of electrical resistance and thermal resistance of the material between the electrodes are established, that is, the purpose of the invention is achieved.

A similar result can be obtained at temperatures between T _h and T ^* by creating a short-term (effective up to 50 seconds) magnetic field with induction up to 2 Tesla in the material between the electrodes that is transverse to the current between the electrodes. Indeed, if the material temperature between the electrodes exceeds T _h and hyperconductivity is not achieved, since the coherent regions near electrodes 1 and 2 did not merge into a single coherent region, then the magnetic field excludes the participation of crystalline phonons in electron-vibrational transitions, essentially the magnetic field will make impossible electronic-vibrational transitions. Thereby, the influx of energy into the coherent regions is suspended, which ensures an increase in the coherence length Λ, i.e. sizes of coherent regions, and their inevitable fusion into a single coherent region, closing electrodes 1 and 2 with each other.

Short-term violation of thermodynamic equilibrium in the material between the electrodes to form a single coherent region that closes the electrodes 1 and 2 and thereby ensures the implementation of hyperconductivity and superconductivity between the electrodes can be achieved by stopping the heating of the material in a magnetic field.

, которая существенно превышает 2Λ. В случае вывода из материала колебательной энергии с помощью замедляющих, резонансных устройств, как предусмотрено п. 1 формулы, размер области рассеяния энергии колебаний может быть существенно уменьшен. Поэтому размер (b) полупроводникового материала целесообразно выбирать не менее четырех длин когерентности (4Λ), (b>4Λ), как это сформулировано в данном пункте формулы.To paragraph 3 of the formula. The size of the material (b) is chosen at least four coherence lengths (4Λ), (b≥4Λ). Choose a material plate thickness of at least 4Λ or a material layer thickness of at least 4Λ on a semiconductor, semi-insulating or dielectric substrate. This condition is determined by the fact that for placing a coherent region in a material, a volume with a characteristic size of at least 2Λ is required. In addition, a volume of material is needed to accommodate the scattering region of the vibrational energy in the form of a spherical layer with a thickness

, which significantly exceeds 2Λ. In the case of removing vibrational energy from the material with the help of moderating, resonant devices, as provided for in paragraph 1 of the formula, the size of the region of dispersion of vibrational energy can be significantly reduced. Therefore, the size (b) of the semiconductor material is advisable to choose at least four coherence lengths (4Λ), (b> 4Λ), as formulated in this claim.

To paragraph 4 of the formula. In order to realize hyperconductivity and superconductivity in a volume of material with a characteristic size significantly exceeding the quadruple coherence length (4Λ), particles of particles with characteristic sizes (c) less than Λ, s≤Λ, forming rectifying contacts with the material, are introduced into this volume of material. It can be semiconductor or metal inclusions. At the indicated sizes of interspersed particles, the coherence regions arising near them completely surround the particles. Further, if the concentrations of disseminated particles are in the range from (2Λ) ^-3 to (2s) ^-3 , then the coherent regions that cover them touch each other or are separated from each other by thin or tunnel thin layers of material, which is why in the material between the electrodes hyperconductivity and super thermal conductivity occur.

Particles embedded in the material themselves can form slowdown systems. In this case, the excess vibrational energy with increasing coherent regions will be converted by such slowing systems into heat, i.e., into phonons that are not associated with ECC. This ensures the implementation of hyperconductivity and superconductivity in a significant amount of material in size exceeding 2Λ, suitable for a variety of technical applications, for example, for hyperconducting magnetic suspensions in transport, for extended conductors of electric current with zero resistance, for extended heat conductors with zero thermal resistance.

To paragraph 5 of the formula. This claim is devoted to the implementation of an analogue of the stationary Josephson effect. If the distance D between the electrodes 1 and 2 exceeds 4Λ by the value d = D-4Λ, then a coherent region of size 2Λ located, for example, at the electrode 1, as shown schematically in FIG. 23, can interact, exchange particles and quasiparticles, with a similar coherent region located near the electrode 2, through tunneling electron-vibrational transitions, if d is not too large.

Coherence regions are characterized by harmonic oscillations with frequencies described by the formula of a harmonic oscillator (6) due to which these regions are harmonic oscillators with a discrete set of electron-vibrational levels. Accordingly, interactions of coherent regions with each other can be considered as interactions of harmonic oscillators related to different coherent regions with each other. Elastic interactions of oscillators are quantitatively described by formulas (9-12). The application of these formulas to the description of the interaction between different coherent regions allows us to draw a reasonable conclusion that a tunneling electron-vibrational current flows between coherent regions located near electrodes 1 and 2. The frequencies of this current correspond to the difference between the energies of the initial and final states of the electron-vibrational transitions. Transitions between states with the same energies correspond to a zero frequency, i.e. form a direct current, which is an analog of the stationary Josephson effect.

The frequency spectra of the oscillations of both coherent regions located near the electrodes 1 and 2 are the same. Oscillations of coherent regions at the same frequency ω ^* according to formula (11) have oscillation amplitudes Н = F / 2rω ^* , where F is the amplitude of the periodic action of one coherent region on another coherent region and r is the damping coefficient of oscillations. It can be seen from formula (11) that the magnitude of the amplitude H can be controlled by changing the amplitude F, for example, by changing the ECC concentration, changing the rate of thermal generation of charge carriers in the material, or changing the external illumination. The value of H can be adjusted by changing the attenuation coefficient, changing the quality factors or coupling coefficients of the slowing devices with the material. According to formulas (12), the oscillation phases of the interacting coherent regions are determined by the expressions: cosδ = 0, sinδ = 1, i.e. δ = π / 2 ± 2π⋅m, where m is a positive integer. It is seen that the vibrations of the interacting coherent regions are mutually polarized, they are orthogonal to each other, and the electrons tunneling between them change the polarization of their elastic vibrations at the same frequency ω ^* and create a direct current, which is an analog of the stationary Josephson effect.

In addition, I-vibrations are associated with phonons localized on the ECC due to which the discrete lines of the vibrational spectrum described by formula (6) are broadened into bands whose contours obey the Gaussian distribution (16) with parameter θ. So-called “indirect” tunnel transitions with the emission and absorption of phonons, that is, with a decrease and an increase in the energy of tunneling particles, that is, with different tunneling frequencies, become possible. As a result of frequency conversion on I-oscillators, frequencies equal to the sum and difference of the tunneling frequencies are allocated. The difference frequency corresponds to the zero tunneling frequency, i.e. corresponds to a direct current in the dielectric gap between coherent regions. This current contributes to the analog of the stationary Josephson effect. In this case, alternating currents flow with difference and combination frequencies of tunneling, forming an analogue of the high-frequency non-stationary Josephson effect. Thus, it turns out that the analogue of the stationary Josephson effect and the analogue of the non-stationary high-frequency Josephson effect are manifested, exist simultaneously, they are inseparable and can only be distinguished by frequency and phase (polarity).

A similar interaction through tunneling electron-vibrational transitions is also possible in the general case, when only a coherent region near one of the contacts is developed to a size of 2Λ. In this case, spontaneously formed coherent regions exist near another contact, which determine its rectifying properties. Therefore, electron-vibrational transitions occur between a coherent region with a size of 2Λ and coherent regions of smaller sizes, located near another electrode.

. Основной вклад в эту сумму вносит один из переходов с энергией вблизи уровня Ферми F=Е^*, а интенсивность и ее температурная и энергетическая зависимость электронно-колебательных переходов подчиняется гауссовой зависимости (16). При вычислении I₀ необходимо определять I_ν с учетом интенсивностей переходов с испусканием и поглощением в среднем S фононов различных типов.In FIG. 24 is an energy diagram of two coherent regions separated from each other by a tunnel thin gap of thickness d = D-4Λ in the absence of a voltage difference between electrodes 1 and 2, for example, when the electrodes are electrically closed by an external conductor. The horizontal arrows here indicate tunneling electron-vibrational transitions without changing the vibrational number ν. The direction of the corresponding transitions and currents is determined by the phase difference of the I-oscillations of the coherent regions. The value of the resulting direct current, which is an analog of the stationary Josephson effect, is determined by the sum of the currents (I _ν ) generated by the tunnel junctions of Cooper pairs between states with the same values of ν:

. The main contribution to this sum is made by one of the transitions with energy near the Fermi level F = E ^* , and the intensity and its temperature and energy dependence of the electron-vibrational transitions obey the Gaussian dependence (16). When calculating I _0, it is necessary to determine I _ν taking into account the intensities of transitions with the emission and absorption of S phonons of various types on average.

и соответствуют милливольтовым напряжениям между электродами 1 и 2. Энергии максимальных квантов соответствуют зачению ν=ν^* в формуле гармонических колебаний (6) и могут составлять доли и даже единицы электрон-вольта.If the electrodes 1 and 2 are electrically open, then the potential difference of the electrodes 1 and 2 caused by the tunneling currents is established, at which the current I ₀ is zero. This potential difference also represents an analog of the stationary Josephson effect, and its value is determined by the magnitudes of the quanta of elastic vibrations. The energies of the smaller of these quanta lie in the range from 0 to

and correspond to millivolt voltages between electrodes 1 and 2. The energies of the maximum quanta correspond to the conception ν = ν ^* in the harmonic oscillation formula (6) and can be fractions or even units of electron-volts.

. В результате в материале между электродами возникает переменный электрический ток такой же циклической частоты

. Этот переменный ток представляет собой аналог нестационарного высокочастотного эффекта Джозефсона. Фаза нестационарного высокочастотного эффекта Джозефсона определяется разностью фаз когерентных упругих колебаний когерентных областей.To item 6 of the formula. This claim is devoted to the implementation of an analog of the non-stationary high-frequency Josephson effect. An analogue of the non-stationary high-frequency Josephson effect occurs if a constant voltage of magnitude V is applied between the electrodes 1 and 2. In this case, the energy scheme of the two coherent regions between the electrodes has the form shown in FIG. 25, where the electron-vibrational energy levels of the coherent regions located at the electrodes 1 and 2 are offset from each other by an amount of eV and the so-called “indirect” tunnel transitions shown by oblique arrows are possible. The electron energies in such transitions decrease by eV. In accordance with the law of conservation of energy under conditions of strong electron-phonon interaction, tunneling electrons oscillate with a cyclic frequency similar to the Josephson effect

. As a result, an alternating electric current of the same cyclic frequency occurs in the material between the electrodes

. This alternating current is an analogue of the non-stationary high-frequency Josephson effect. The phase of the unsteady high-frequency Josephson effect is determined by the phase difference of the coherent elastic vibrations of the coherent regions.

A constant electric voltage between the electrically open electrodes 1 and 2 arises as a result of the Josephson current I ₀ , i.e. as a result of the stationary Josephson effect, the magnitude of which (in Volts) can be fractions or even units of Volta. This creates the conditions for the emergence of an analogue of the non-stationary high-frequency Josephson effect. In other words, the analogues of the stationary and high-frequency non-stationary Josephson effects are mutually connected, differing only in frequencies.

When voltage V changes, the electron-vibrational levels of neighboring coherent regions with different vibrational numbers ν separated by a dielectric tunnel thin layer acquire the same energies and are placed opposite each other in the energy scheme. Under such conditions, an analog of the stationary Josephson effect becomes possible due to tunneling of charges between these levels with different ν. Therefore, the implementation of the analogue of the non-stationary Josephson effect is related to the implementation of the analog of the stationary Josephson effect. Generally speaking, these effects are distinguishable only in frequency.

Tunnel transitions between the electron-vibrational states of various coherent regions separated by distance d in the material have so far been studied poorly and have not been fully quantified. However, it seems possible to determine the permissible range of tunnel thin thicknesses d. Thus, the heights of potential barriers separating coherent regions according to the energy scheme of the hyperconductor shown in FIG. 5 is equal to the difference E _c -E _count and can exceed 1 electron-volt, the oscillation frequency in these states can exceed 10 ¹⁵ Hertz. With such data, efficient tunneling of electrons in semiconductors is possible through potential barriers with a thickness of 10 A to 50 microns [40]. It is also known that electrons, holes and various phonons that provide electron-phonon interaction are localized at electron-vibrational energy levels. At the ECC there are localized phonons with low energy and with wavelengths of tens of microns. It should be noted that tunnel transitions occur almost without changing the energy of the tunneling particles. In electron-vibrational tunneling, this condition is satisfied by transitions involving low-energy phonons with large wavelengths reaching tens of microns. In the case of electron-vibrational tunneling, it is the low-energy phonons coupled to the ECC with a wavelength reaching several tens of microns that determine the largest thickness of the tunnel-transparent gap d reaching tens of microns, since these phonons penetrate such a potential barrier. Therefore, the thickness of the tunnel thin gap between coherent regions d in typical semiconductors can take values in the approximate range from 10 Angstroms to 50 microns.

The real processes that determine the appearance of analogues of the stationary Josephson effect and the non-stationary high-frequency Josephson effect in hyperconductor tunnel structures are much more complicated than the considered electron-vibrational transitions between coherent regions and more complicated than in superconducting tunnel structures. This complexity is determined by the presence in coherent regions of a large number of allowed electron-vibrational energy levels, i.e. a large number of harmonic I-oscillators (with different values of ν = 0, 1, 2, see formula (6)) and a wide range of vibrational frequencies corresponding to the participation in the electronic-vibrational transitions of the average number (p≅S >> 1) of phonons) various types.

. Обычно эти частоты соответствуют СВЧ диапазону, но в принципе возможны и электронные переходы с частотами оптического диапазона. Тогда можно наблюдать ИК или видимое свечение. Такое свечение живых объектов, которые, как известно, являются полупроводниками, наблюдают в виде ауры.A huge number of permissible various vibrational states of coherent regions in hyperconductors, in contrast to the only vibrational state of a Cooper electron pair in superconductors, leads to qualitatively new properties of analogs of the Josephson effects in hyperconductor tunnel structures, in contrast to the Josephson effects in superconductor structures. Indeed, if the totality of harmonic oscillators characterizing one of the coherent regions interacts with the totality of harmonic oscillators characterizing the other coherent region, then the interaction of the coherent regions can be represented as the superposition of pairwise interactions between the oscillators of both regions. For each pair of interacting oscillators, according to harmonic solutions of equation (8), harmonic, subharmonic, ultraharmonic and ultrasubharmonic oscillations arise (see page 33), and for arbitrary values of positive integers that are independent of us, a wide spectrum of vibrational frequencies of each coherent region is obtained. Important are equal and close to each other vibrational frequencies, the same electron-vibrational levels of interacting coherent regions. It is between equal levels that the Cooper electron pairs tunnel between coherent regions, which manifests itself in the form of an analogue of the stationary Josephson effect. Under the same conditions, “indirect tunneling” manifests itself in the form of an analogue of the unsteady high-frequency Josephson effect. Analogs of stationary and non-stationary high-frequency Josephson effects arise and exist under identical conditions. They coexist with each other at the same time and can be divided by frequency. For the analog of the stationary Josephson effect, the cyclic frequency is ω≡0, and for the analog of the non-stationary high-frequency Josephson effect, the cyclic frequency is ω> 0 and can take values between 0 and

. Typically, these frequencies correspond to the microwave range, but in principle electronic transitions with frequencies in the optical range are possible. Then you can observe the IR or visible glow. Such a glow of living objects, which are known to be semiconductors, is observed in the form of an aura.

Analogs of the stationary and non-stationary effects of Josephson can occur simultaneously. The energy of the analog of the non-stationary high-frequency Josephson effect can be converted to the energy of the analog of the stationary Josephson effect and vice versa, the energy of the analog of the stationary Josephson effect can be converted to the energy of the analog of the non-stationary high-frequency Josephson effect depending on the external conditions that we can change. Therefore, the values of analogues of Josephson effects can be changed by changing physical conditions external to the material of the tunnel structure.

In view of the wide spectrum of vibration frequencies of coherent regions, the specific values of the resonant frequencies associated with the material of the moderators are insignificant, since there is always an oscillation of electric charges with a frequency falling into the frequency band of these devices. The coincidence or even proximity to each other of the resonant frequencies of the moderators associated with the material near the electrodes 1 and 2 is also optional. The resonant frequencies of these devices can differ significantly from each other, but they provide the removal of excess vibrational energy from the material, which is necessary to increase the size coherent domains, coherence length Λ.

Due to the use of moderators, an analog of the non-stationary high-frequency Josephson effect can be observed at frequencies within the bandwidth of the moderator. To determine the frequency spectrum of an analog of an unsteady high-frequency effect, the resonant frequency of the moderator associated with the material is changed.

To paragraph 7 of the formula. This claim is devoted to the implementation of analogues of Josephson effects in the presence of a dielectric layer between coherent regions. In this case, two hyperconductor materials are used, each of which is selected with a thickness of at least four coherence lengths (4Λ) so that it can contain a coherence region with a diameter of 2Λ separated by a tunneling thin dielectric layer of thickness d. On the outer surface of each of the samples or in their volume, electrodes (1 and 2) are placed on the normal to the interface of the materials with the dielectric layer, forming rectifying contacts with the materials, for example, metal-semiconductor contacts, as shown in FIG. 26. The direct current in this structure is measured (metal 1 — hyperconductor 1 — dielectric — hyperconductor 2 — metal 2), flowing between electrodes 1 and 2, and the measurement results are interpreted as an analog of the stationary Josephson effect. Between electrodes 1 and 2, a constant voltage is applied from an external source with a value of not more than the electrical breakdown voltage of this structure; measure the alternating voltage and (or) alternating current in the material between the electrodes, and the measurement results are identified as an analog of the high-frequency non-stationary Josephson effect, measure the frequency of the alternating current in the material between the electrodes or (and) alternating voltage between the electrodes and identify it as the frequency of the analog of the high-frequency non-stationary effect Josephson In this way, analogues of the stationary Josephson effect and the high-frequency non-stationary Josephson effect in a hyperconductor tunnel structure are realized.

In view of the periodic arrangement of the electron-vibrational levels of the coherent regions, a periodic dependence of the analogs of Josephson effects on the magnitude of the bias voltage V is observed with periods that are multiples of the energy of "zero oscillations": E _z / e.

Tunneling of electrons through a gap of thickness d between coherent regions is possible with the absorption of phonons (when the energy of the final state of electrons is greater than the energy of the initial state) and with the emission of phonons (when the energy of the final state of electrons is less than the energy of the initial state). In the first case, the material between the electrodes is cooled, and in the second case, it heats up when voltage V is turned on.

The study of the analog of the stationary Josephson effect and the analog of the high-frequency non-stationary Josephson effect, carried out in hyperconductor tunnel structures with many electron-vibrational energy levels of coherent regions, allows a deeper understanding of the nature of the Josephson effects in superconductors where this possibility is limited, since in fact there is only one energy band forbidden for electrons 2Δ wide near the Fermi level (F ± Δ) and Δ is determined by the low-energy phonon by binding electrons to Cooper pairs. In contrast to superconductors, hyperconductors have elastic I-vibrations with quantum energies many times higher than the phonon energies in superconductors, which makes it possible to carry out, study, and apply analogs of the Josephson effects at near-room and higher temperatures and in a wider frequency range.

To paragraph 8 of the formula. This claim is devoted to the implementation of analogues of Josephson effects in heterostructures formed by various hyperconductors.

Analogs of Josephson's effects are manifested in heterostructures, which are formed by heterogeneous hyperconductors in contact with each other.

In order to implement analogues of Josephson effects in a heterostructure, two different hyperconducting materials with a thickness of at least 4Λ are used. An electrode is formed on the outer surface or in the volume of each of the hyperconductors, forming a rectifying contact with the material, for example, a metal-semiconductor contact. Between these electrodes (1 and 2), a constant or alternating voltage of no more than the breakdown voltage of a given heterostructure is applied, the polarity and (or) phase of this voltage and (or) its value are changed. Thereby, the thickness of the depletion layer in the heterostructure is changed, which in this case is a tunnel thin gap between the hyperconductors. Electron-vibrational states consisting of electrons, I-vibrations, and phonons tunnel through this gap. The magnitude and (or) polarity of the analogue of the stationary Josephson effect is measured or (and) the magnitude and (or) frequency and (or) the phase of the analogue of the high-frequency non-stationary Josephson effect are measured.

In FIG. 27 are given from the book [50] energy diagrams of anisotype heterostructures n (+) p; n (-) p; n (-) n and p (+) p types taking into account positively (+) and negatively (-) charged local defects at the material interface, taking into account the real presence of defects. The Latin numbers I, II, III, and IV refer to heterocontact groups with a certain ratio of electronic affinity and band gap of materials. Vertically in FIG. 27 the electron energy is plotted, and horizontally - the distance, the coordinate along the direction between the contacting materials. The horizontal dashed lines represent the Fermi levels. Due to defects at the interface, the energy diagrams of heterostructures are similar to diagrams for semiconductor-metal-semiconductor sandwiches. It can be seen from these diagrams that the heterostructures really contain depleted layers of the main carriers at the boundary between the materials. These layers are highly resistive and in our case are those tunnel thin gaps between two hyperconductors through which the electrons, associated phonons and I-vibrations tunnel through them, creating analogs of the Josephson effects.

, что создает в материале между электродами переменный электрический ток с этой же частотой, который можно регистрировать во внешней по отношению к материалу с электродами цепи. Можно также регистрировать высокочастотное напряжение между электродами 1 и 2. Область допустимых изменений напряжения V состоит из участков по размеру кратных E_z/e с границами V_гр=(E_z/e)⋅ν, где v=0, 1, 2, … На границах между этими участками напряжений, когда энергетические термы когерентных областей в материалах по обе стороны туннельного зазора совпадают, доминирует аналог стационарного эффекта Джозефсона, а при относительном смещении энергетических термов когерентных областей возникает и усиливается аналог высокочастотного, нестационарного эффекта Джозефсона.To paragraph 9 of the formula. This paragraph of the formula is devoted to the regulation of the magnitude, frequency and phase of the analogue of the high-frequency, non-stationary Josephson effect with the help of an electric voltage applied between the electrodes. Applied between the electrodes 1 and 2, a constant electric voltage V causes the electronic vibrational levels of the coherent regions to shift relative to each other by an amount eV, as shown in FIG. 25. As a result, electron-vibrational tunneling between different coherent regions is associated with energy dissipation eV. Due to the strong electron-phonon interaction, the indicated energy is scattered in the form of phonons, causing charge oscillations with the corresponding cyclic frequency

, which creates an alternating electric current in the material between the electrodes with the same frequency, which can be registered in a circuit external to the material with the electrodes. It is also possible to register a high-frequency voltage between electrodes 1 and 2. The region of permissible changes in voltage V consists of sections of a multiple of E _z / e with boundaries V _gr = (E _z / e) ⋅ν, where v = 0, 1, 2, ... At the boundaries between these stress sections, when the energy terms of the coherent regions in the materials on both sides of the tunnel gap coincide, the analogue of the stationary Josephson effect dominates, and when the energy terms of the coherent regions are relatively shifted, an analog of the high-frequency, non-stationary Josephson effect.

;

), то возникает аналог высокочастотного, нестационарного эффекта Джозефсона с частотами, определенными в пп. а), б), в), г) на стр. 29-30 величина которого зависит от амплитуды внешнего переменного напряжения, что согласуется с формулой (11). Таким образом, высокочастотный, нестационарный эффект Джозефсона в туннельных структурах гиперпроводников можно использовать для преобразования частот электрических сигналов, причем одновременно можно преобразовывать исходный сигнал в сигналы с определенными фазами на нескольких частотах, а также осуществлять частотное управление фазами частотно преобразованных сигналов согласно формулам (12). Тем самым предоставляется возможность управлять работой, например, излучателей фазовых антенных решеток на нескольких частотах с определенными фазами одновременно.If an alternating voltage V is applied between electrodes 1 and 2 with a cyclic frequency Ω (the smaller of

;

), then an analog of the high-frequency, non-stationary Josephson effect with frequencies determined in claims. a), b), c), d) on pages 29-30, the value of which depends on the amplitude of the external alternating voltage, which is consistent with formula (11). Thus, the high-frequency, non-stationary Josephson effect in tunnel structures of hyperconductors can be used to convert the frequencies of electrical signals, and at the same time, the original signal can be converted to signals with certain phases at several frequencies, as well as frequency control of the phases of the frequency-converted signals according to formulas (12). Thus, it is possible to control the operation of, for example, emitters of phase antenna arrays at several frequencies with certain phases simultaneously.

In this paragraph of the formula, it is proposed to use these dependencies to control the magnitude and frequency of the analogue of the high-frequency non-stationary Josephson effect due to a change in the magnitude and frequency of the external voltage between electrodes 1 and 2.

To paragraph 10 of the formula. This claim is devoted to the implementation of analogues of the Josephson effects and the Meissner effect in conditions of illumination of the material between the electrodes by electromagnetic radiation. Generally speaking, illumination of a material between electrodes by electromagnetic quanta causes a change in the coherence length Λ, temperature of the hyperconducting transition T _h , magnitude, frequency, and phase of the Josephson effects, as well as the magnitude of the Meissner effect. The magnitude and sign of such changes depend on the materials used, on the specific properties of the radiation, on the lighting conditions of the samples, and on the properties of the ECC available in the material.

There is no doubt that the temperature of the hyperconducting transition and the technical parameters of the analogs of Josephson effects change under the influence of the fraction of radiation that is absorbed in the material, brings additional energy to the material, and creates changes in the concentration of phonons and charge carriers at electronic vibrational levels. In this regard, it is advisable to identify the spectral regions corresponding to the important mechanisms of absorption of electromagnetic radiation in materials.

, прямозонного полупроводника и при

, где ширина запрещенной зоны материала E_g=Е_с-E_v, Е_ех - энергия связи экситона, Е_фoн - энергия кристаллического фонона, участвующего в межзонном электронном переходе,

- постоянная Дирака и h - постоянная Планка, ω - циклическая частота поглощаемого излучения, Е_с и E_v - дно зоны проводимости и потолок валентной зоны полупроводникового материала, соответственно. Длина волны электромагнитных волн

, где с - скорость света в вакууме. В этой полосе коэффициент поглощения обычно особенно велик и достигает (10⁵…10⁶) см^-1, а полоса поглощения простирается до энергий квантов в несколько электронвольт. Генерируемые в данном случае электроны и дырки рекомбинируют на энергетических уровнях ЭКЦ, вызывают изменение длины когерентности Λ, поскольку или увеличивают колебательную энергию или дополняют энергию, подлежащую рассеянию. Соответственно изменяются условия для осуществления гиперпроводимости и сверхтеплопроводности, изменяется величина эффекта Джозефсона.The intrinsic, fundamental, fundamental, or band-band absorption in the material causes bipolar generation of mobile charge carriers as a result of electronic transitions through the forbidden band. The corresponding spectral absorption band is located at quantum energies

direct gap semiconductor and at

where the band gap of the material is E _g = E _c -E _v , E _ex is the exciton binding energy, E _phon is the energy of the crystalline phonon participating in the interband electronic transition,

are the Dirac constant and h is the Planck constant, ω is the cyclic frequency of the absorbed radiation, E _c and E _v are the bottom of the conduction band and the ceiling of the valence band of the semiconductor material, respectively. Electromagnetic wavelength

where c is the speed of light in vacuum. In this band, the absorption coefficient is usually especially large and reaches (10 ⁵ ... 10 ⁶ ) cm ^-1 , and the absorption band extends to quantum energies of several electron volts. The electrons and holes generated in this case recombine at the ECC energy levels, cause a change in the coherence length Λ, since they either increase the vibrational energy or supplement the energy to be scattered. Accordingly, the conditions for the implementation of hyperconductivity and superconductivity change, the magnitude of the Josephson effect changes.

Impurity absorption causes monopolar, electronic, or hole transitions between the impurity level and the allowed energy band and subsequent recombination at the ECC. Due to monopolar generation, the charge state of the initial dominant recombination level E ^* (and possibly its energy) changes, causing a change in Λ, T _h , and the quantities characterizing the Josephson effects. Recombination of charge carriers at electron-vibrational levels under stationary conditions maintains the electroneutrality of these levels, which stabilizes the state of the Fermi level in the position at E _g / 3 above the ceiling of the valence band (the well-known "1/3 rule" [45]), and the photoconductivity turns out to be negative.

Generally speaking, IR absorption bands associated with electronic, hole transitions between the energy level of impurity centers E _t1 , E _t2 , ... E _ti can be used in the claimed invention, these are the so-called intercenter transitions that change the vibrational and charge states of the dominant recombination level E ^* , causing a change in Λ, T _h , and the magnitude of the effects of Josephson and Meissner.

Practically important is the effect of radiation in spectral regions with wavelengths:

. В этой области спектра переходы типа А можно осуществить, например, в кремнии (E_g=1.12 эВ), переходы типа В можно осуществить, используя материалы: Se (E_g=1,8 эВ), AlSb (E_g=1,6 эВ), CdSe (E_g=1,7 эВ), HgS (E_g=1,7 эВ) переходы типа C можно осуществить в AlN (E_g=3,8 эВ), в АlP (E_g=3,0 эВ);- near 0.9 microns

. In this spectral region, type A transitions can be performed, for example, in silicon (E _g = 1.12 eV), type B transitions can be performed using materials: Se (E _g = 1.8 eV), AlSb (E _g = 1.6 eV), CdSe (E _g = 1.7 eV), HgS (E _g = 1.7 eV) type C transitions can be performed in AlN (E _g = 3.8 eV), in AlP (E _g = 3.0 eV);

. В этой области спектра переходы типа А можно осуществить в кремнии (E_g=1.12 эВ), переходы типа В можно осуществить, используя материалы: Se (E_g=1,8 эВ), CdSe (E_g=1,7 эВ), Sb₂S₃ (E_g=1,7 эВ), переходы типа с) можно осуществить в ZnS (E_g=3,58 эВ), в GaN (E_g=3,3 эВ);- near 1.06 microns

. In this spectral region, type A transitions can be realized in silicon (E _g = 1.12 eV), type B transitions can be realized using materials: Se (E _g = 1.8 eV), CdSe (E _g = 1.7 eV), Sb ₂ S ₃ (E _g = 1.7 eV), transitions of type c) can be performed in ZnS (E _g = 3.58 eV), in GaN (E _g = 3.3 eV);

от 0,41 эВ до 0,25 эВ). Переходы типа А можно осуществить, используя InSb (E_g=0,23 эВ), PbS (E_g=0,37 эВ), InAs (E_g=0,36 эВ), Те (E_g=0,32 эВ), PbSe (E_g=0,26 эВ), Bi₂Se₃ (E_g=0,28 эВ), переходы типа В можно осуществить в Те (E_g=0,32 эВ), InAs (E_g=0,36 эВ), PbS (E_g=0,37 эВ), переходы типа С можно осуществить используя растворы германия с кремнием GeSi (0,68 эВ≤E_g≤1,12 эВ), а также материалы GaSb (E_g=0,68 эВ), Mg₂Si (E_g=0,77 эВ), Mg₂Ge (E_g=0,74 эВ);- in the range from 3 to 5 μm (s

from 0.41 eV to 0.25 eV). Type A transitions can be performed using InSb (E _g = 0.23 eV), PbS (E _g = 0.37 eV), InAs (E _g = 0.36 eV), Te (E _g = 0.32 eV) , PbSe (E _g = 0.26 eV), Bi ₂ Se ₃ (E _g = 0.28 eV), type B transitions can be performed in Te (E _g = 0.32 eV), InAs (E _g = 0, 36 eV), PbS (E _g = 0.37 eV), type C transitions can be carried out using germanium solutions with GeSi silicon (0.68 eV≤E _g ≤1.12 eV), as well as GaSb materials (E _g = 0 , 68 eV), Mg ₂ Si (E _g = 0.77 eV), Mg ₂ Ge (E _g = 0.74 eV);

от 0,155 эВ до 0,104 эВ) переходы типа А можно осуществить используя Cd₃As₂ (E_g=0,13 эВ), Вi₂Te₃ (E_g=0,13 эВ), переходы типа В можно осуществить используя InSb (E_g=0,18 эВ), PbSe (E_g=0,2 эВ), переходы типа С можно осуществить используя Те (E_g=0,32 эВ), InAs (E_g=0,36 эВ), PbS (E_g=0,37 эВ), Mg₂Sn (E_g=0,36 эВ), SbTe3 (E_g=0,3 эВ), CdSb (E_g=0,46 эВ), Ga₂Pb (E_g=0,46 эВ).- in the range from 8 μm to 12 μm (s

from 0.155 eV to 0.104 eV) type A transitions can be performed using Cd ₃ As ₂ (E _g = 0.13 eV), Bi ₂ Te ₃ (E _g = 0.13 eV), type B transitions can be performed using InSb (E _g = 0.18 eV), PbSe (E _g = 0.2 eV), type C transitions can be performed using Te (E _g = 0.32 eV), InAs (E _g = 0.36 eV), PbS (E _g = 0.37 eV), Mg ₂ Sn (E _g = 0.36 eV), SbTe3 (E _g = 0.3 eV), CdSb (E _g = 0.46 eV), Ga ₂ Pb (E _g = 0.46 eV).

Absorption of I-vibrations of atomic nuclei in an ECC is essential in this invention, since it contains materials containing ECC. The quanta of such α-, β-, and γ-type vibrations are known, their values can be determined using FIG. 3 or calculated using the following formula, which is true for atoms with different atomic numbers Z> 8:

) и экспериментальные значения квантов I-колебаний для некоторых атомов представлены на фиг. 3 в зависимости от атомного номера Z.where ζ = 5/16 and ξ = ηZ ^1/3 , η varies from 1 to 1.15 when Z varies from 8 to 80, χ = 1.2 (for the α-type of I-oscillations) takes into account the contribution to the electron density from the orbitals K, L, M, N, ϑ = 0.88534, ε ₀ is the electric constant, m _n and m _p are the neutron and proton masses, and ₀ is the diameter of the first Bohr electron orbit in the hydrogen atom. Elementary quanta of natural vibrations of the β-type can be similarly determined by this formula at χ = 0.2. Elementary quanta of natural vibrations of the γ type can be determined at χ = 0.056. The calculated quanta of I-oscillations (

) and experimental values of I-vibration quanta for some atoms are presented in FIG. 3 depending on the atomic number Z.

It is also known that wide IR reflection and absorption bands are associated with optical excitation of I-vibrations. The bandwidth is determined by the energies of the phonons and I-vibrations involved in the electronic-vibrational transitions. The contours of the reflection spectra are described by the theory of reflection by a charged harmonic oscillator.

The classical theory of optical reflection by a charged harmonic oscillator [51] is quite applicable to the description of optical reflection bands localized by phonons on ECC to electrons, when the electrons are really localized on ECC, are not free, and therefore can interact with IR radiation. Electrons localized at the ECC are associated with phonons, oscillate with the phonon frequencies, and are charged harmonic oscillators. These oscillators exhibit attenuation because their oscillations are destroyed and the energy dissipated. The oscillations of these oscillators are supported by the energy of an external action relative to the ECC, for example, by the energy of external electromagnetic radiation. Forced oscillatory motions of an electron localized on an ECC are described by the equation of forced oscillations of a harmonic charged oscillator

where x is the generalized, principal or configuration coordinate of the oscillator, m is the mass and e is the electron charge, r is the attenuation coefficient, Ω is the natural frequency of the oscillator, E is the amplitude, and ω is the cyclic frequency of the electrical component of the optical wave. The solution to this equation, corresponding to forced displacements, electron vibrations at the ECC, can be written in the following form:

The electron shift causes the appearance of a dipole moment and polarization P, which is associated with the electric vector E of the optical wave: εε ₀ E = ε ₀ E + P. Here ε = (n-ik) ² is the complex dielectric constant, n is the optical refractive index, k is the absorption coefficient (extinction), and ε ₀ is the electric constant. If the concentration of intrinsic oscillators is N, then the dipole moment per unit volume of the substance can be written as follows:

, где ε_опт - оптическая, высокочастотная диэлектрическая проницаемость. Далее, воспользовавшись известными соотношениями Крамерса-Кронига, выделяют действительную и мнимую части комплексной диэлектрической проницаемости:From this data determine

where ε _opt is the optical, high-frequency dielectric constant. Further, using the well-known Kramers-Kronig relations, the real and imaginary parts of the complex permittivity are distinguished:

where ω _p is the largest of the frequencies of elastic vibrations of electrons of the ECC.

From these expressions it is possible to determine the refractive index and extinction:

и

,

and

,

where ε _r and ε _i are the real and imaginary parts of the complex dielectric constant and write the coefficient of optical reflection in the following form:

where R _∞ has the meaning of the coefficient of optical reflection from the flat surface of a monolithic material occupying half-space (half space).

The quantum theory of optical reflection by a linear charged harmonic oscillator represents the superposition of its classical reflection spectra associated with each of the quantum vibrational levels corresponding to the values of the vibrational quantum number ν = 0, 1, 2, ...

The features of the reflection spectrum of a charged harmonic oscillator can be seen in the calculated spectrum of the oscillator shown in FIG. 28. The spectral position of the optical reflection band of the oscillator is determined by the frequencies Ω and ω _P. The highest value of R _∞ reaches at optical frequencies between Ω and ω _P. At the oscillator frequency Ω, there is a characteristic narrow and therefore usually hardly solvable reflection minimum, and the minimum value of R _∞ is located near ω _Р.

The reflection spectrum of a charged quantum harmonic oscillator is the sum of the reflection spectra (24) of oscillators with frequencies of quantum oscillations.

In FIG. Figure 29 shows a typical experimental IR reflection spectrum of ECCs formed by Al impurity atoms in a GaP single crystal (curve 11). The calculated components of this spectrum are presented: 12, 13, 14, and 15, corresponding to the filling of various vibrational states of an ECC with energies that are multiples of the energy of a quantum of vibrational nuclei in an aluminum impurity atom. The sum of these calculated spectra coincides with the experimental curve 11. The characteristic energies of the IR quanta in the components of the spectrum (ω _P ) are respectively 0.5E ₁₁ , E ₁₁ , 1.5E ₁₁ , 2E ₁₁ , that is, they are multiples of half the energy of the elementary vibrational quantum of the oscillator, equal to E _Z = E ₁₁ = 0.283 eV, which describes the vibrations of the nucleus in the Al atom. The minimum quantum energies in these components of the spectrum (Ω) coincide with the quantum energies of the β and γ types of I vibrations of the nucleus in the Al impurity atom, which is why the usually narrow reflection minimum near the short-wavelength edge of the reflection band is broadened and therefore well optically resolved. Similar results were obtained when studying the reflection spectra of ECC, which in GaP are formed by impurity sulfur atoms with an elementary quantum of natural vibrations of the α-type I-vibration of the nucleus (E _Z = 0.301 eV). The minimum quantum energies in these components of the spectrum are the same and coincide with the quantum energies of the β and γ types of I vibrations of sulfur atomic nuclei. Therefore, the ECC in these samples were formed precisely by Al and S atoms, respectively.

The reflection spectra of carbon nanotube films grown on various substrates also have wide spectra with energies characteristic of I-vibrations of nuclei in carbon atoms. These films were first grown by sputtering high-purity graphite with an electron beam in vacuum and depositing atomized carbon atoms on conductive, semiconductor, or dielectric substrates [52]. Such films are regularly and densely arranged to each other carbon tubes of nanometer diameter and about 0.1 microns high, standing along the normal to the surface of the substrate or at an acute angle to the normal. It is known that nanotubes are combined into bundles, and bundles are combined into bandels, which are regularly and densely located on the substrate and form a regular structure characteristic of single crystals.

A typical IR reflection spectrum of a carbon nanotube film grown on a quartz substrate is shown in FIG. 30. This spectrum contains features of the reflection spectra of oscillators, which represent nuclear vibrations in oxygen and carbon atoms. The energy of natural vibrations of this oscillator coincides with half of the elementary quantum of the oxygen oscillator (0.11 eV). The maximum energy in this spectrum coincides with the vibrational energy of the nucleus in the carbon atom. Analysis of the spectrum allows us to associate it with forced vibrations of the ECC of two types, of which one type of ECC is formed by oxygen atoms, and the second by carbon atoms. In other words, in this spectrum, the energy exchange between different types of ECCs formed by oxygen atoms and carbon atoms, i.e. atoms of the substrate and atoms of the film on the substrate.

A typical IR reflection spectrum of a carbon nanotube film grown on a molybdenum substrate and shown in FIG. 31 is also the IR reflection spectrum of a charged harmonic oscillator with an eigenfrequency Ω, which coincides with the β-type frequency of nuclear vibrations in the carbon atom. In this case, ECCs are formed by carbon atoms.

A typical IR reflection spectrum of a carbon nanotube film grown on a copper substrate, shown in FIG. 32 is also the IR reflection spectrum by a harmonic oscillator with an eigenfrequency Ω, which coincides with the β-type frequency of nuclear vibrations in the carbon atom. In this case, ECCs are also formed by carbon atoms.

An analysis of the reflection spectra of ECCs in various materials and structures based on them showed that intense absorption of radiation occurs in them, the energy of which is spent on excitation of I-vibrations of ECC, on excitation of elastic harmonic vibrations of atomic nuclei in atoms with the participation of crystalline phonons. It is these oscillations that determine the nature of hyperconductivity and super thermal conductivity. The radiation absorbed by the vibrations changes the value of the vibrational energy E _count , affects Λ, T _h , the magnitude of the Josephson effects and the magnitude of the Meissner effect.

Heating the electrons of the ECC by heating the entire material as a whole is ineffective. In this case, the energy spent on heating a portion of the material is only partially transferred to the electrons of the local center participating in the electron-vibrational currents we need. Most of the energy entering the material is transferred to the crystal lattice and unproductively spent on lattice thermal conductivity, on radiative transitions, which do not contribute to the electron-vibrational current.

и

. Таким образом, электромагнитное ИК излучение в полосе с энергиями квантов от

до

, соответствующим длинам ИК волн от λ_min до λ_max затрачивается на возбуждение колебаний связанных на ЭКЦ электронов с частотами фононов. Циклические частоты колебаний электронов совпадают с циклическим частотами локализованных фононов в диапазоне от

до

. При этом энергия ИК квантов передается непосредственно локализованным на ЭКЦ электронам, и не расходуется на непроизводительное нагревание кристаллической решетки. Это позволяет уменьшить затраты ИК энергии на создание электронно-колебательного тока в материале и повысить фоточувствительность при регистрации изучения данным способом в том числе и в длинноволновой части ИК спектра, где ИК кванты и без того мало энергичны. Указанные полосы поглощения электромагнитного излучения, соответствующие различным температурам Дебая, лежат в ИК диапазоне. ИК поглощение, соответствующее акустическим фононам в различных материалах по литературным данным [51] наблюдали в диапазоне длин волн от 15 мкм до 60 мкм.In the non-adiabatic electronics, to which the claimed invention relates, it is possible to increase the efficiency of using IR energy supplied to the material and use it to heat precisely the ECC electrons, without changing the temperature of the crystal lattice of the material. The effect of heating predominantly electrons (holes) on the ECC is achievable if the energy is sent to the material in the form of electromagnetic radiation in a certain spectral range of wavelengths from λ _min to λ _max . The limits of this spectral range are quite definitely related to electron-vibrational currents (16) and to the temperature boundaries of the electron drag phonon (UEF) bands located near the phonon Debye temperatures T _m , between T _m -3θ and T _m + 3θ. It is well known that in crystals containing 2 or more atoms in a unit cell, acoustic and optical phonons can exist that are grouped into dispersion branches. These dispersion branches reach a maximum, generally speaking, at different frequencies which correspond to the Debye temperature (T _m ). Therefore, crystals containing at least two atoms in a unit cell are characterized by at least four Debye temperatures of phonons corresponding to branches of longitudinal acoustic and optical phonons, as well as to branches of transverse acoustic and optical phonons. According to the law of conservation of energy, the following electromagnetic wavelengths correspond to these temperatures:

and

. Thus, electromagnetic IR radiation in a band with quantum energies from

before

corresponding infrared wavelengths from λ _min to λ _{max is} expended on the excitation of vibrations of electrons coupled to the ECC with phonon frequencies. The cyclic frequencies of electron vibrations coincide with the cyclic frequencies of localized phonons in the range from

before

. In this case, the energy of IR quanta is transferred directly to the electrons localized to the ECC, and is not spent on unproductive heating of the crystal lattice. This allows you to reduce the cost of IR energy to create an electron-vibrational current in the material and to increase photosensitivity when registering studies using this method, including in the long-wavelength part of the IR spectrum, where IR quanta are already low energy. The indicated absorption bands of electromagnetic radiation corresponding to various Debye temperatures lie in the IR range. IR absorption corresponding to acoustic phonons in various materials according to published data [51] was observed in the wavelength range from 15 μm to 60 μm.

The above expressions relating the values of λ _min , λ _max , ω _max and ω _min and Debye temperatures T _m are one-to-one, that is, using these expressions it is possible from the values of the parameters of the IR reflection spectra (λ _min , λ _max , ω _max and ω _min ) determine T _m and θ the temperature width of the UEF band, i.e. θ. And vice versa, according to the data on the values of T _m and θ, it is possible to determine the parameters of the IR spectrum (λ _min , λ _max , ω _max and ω _min ) associated with the excitation of electron vibrations at the ECC with the frequencies of the corresponding phonons.

, акустических поперечных

, оптических продольных

, оптических поперечных

, а также с дебаевыми температурами I-колебаний α-, β-, γ - типов в содержащих ЭКЦ материалах имеются соответствующие оптические полосы поглощения и отражения, заключенные между λ_min и λ_max для каждого из этих типов упругих колебаний материала в которых энергия ИК излучения передается локализованным на ЭКЦ, локализованным в когерентных областях электронам. Положение этих полос в пределах спектрального диапазона зависит от значений температур T_m и θ, от угла падения излучения на поверхность материала и его поляризации, от кристаллографической ориентации материала относительно направления между электродами 1 и 2. Учитывая эти особенности, выбирают материал и его кристаллографическую ориентацию, а также поляризацию и угол падения регистрируемого излучения на материал, осуществляют детектирование ИК квантов с низкими внутренними шумами без охлаждения материала в узкой полосе от

до

по данным о вызываемом этим излучением изменении длины когерентности Λ, или (и) изменении температуры гиперпроводящего перехода T_h, или (и) величин, или (и) частот или (и) фаз (полярности) эффектов Джозефсона.Thus, it is possible to increase the vibrational energy of electrons at the ECC, and therefore increase the vibrational energy of coherent regions, due to the energy of infrared radiation. In material with Debye temperatures of acoustic longitudinal

acoustic transverse

optical longitudinal

optical transverse

As well as with the Debye temperatures of α-, β-, γ-type I-vibrations in materials containing ECC, there are corresponding optical absorption and reflection bands between λ _min and λ _max for each of these types of elastic vibrations of the material in which the IR radiation energy is transmitted to electrons localized on the ECC, localized in coherent regions. The position of these bands within the spectral range depends on the temperatures T _m and θ, on the angle of incidence of the radiation on the surface of the material and its polarization, on the crystallographic orientation of the material relative to the direction between electrodes 1 and 2. Given these features, choose the material and its crystallographic orientation, as well as the polarization and angle of incidence of the recorded radiation on the material, they detect IR quanta with low internal noise without cooling the material in a narrow band from

before

according to the data on the change in the coherence length Λ caused by this radiation, or (and) the change in the temperature of the hyperconducting transition T _h , or (and) the values, or (and) the frequencies or (and) phases (polarity) of the Josephson effects.

The relationship between the temperature bands of the electron-vibrational currents I in the interval from T _m -3θ to T _m + 3θ and the IR reflection band of the ECC located between the IR wavelengths Λ _min and Λ _{max was} confirmed experimentally. So in FIG. 33 shows the characteristic temperature dependence of the electron-vibrational current in a GaP single crystal containing ECCs formed by Al impurity atoms. The width of the most intense current strip I, measured at its half maximum, lies in the range from 442 K to 502.3 K, θ≅5 K, T _m = 693.15 K. The boundaries of this band are 3θ apart from the value of T _m : T _{m is} -3θ = 427 K; T _m + 3θ = 517.26 K. Given that the thermal energy is 1 K = 8.616562⋅10 ^-5 eV, we determine the energies corresponding to temperatures T _m -3θ and T _m + 3θ equal to 36.79⋅10 ^-3 eV and 44.57⋅10 ^-3 eV. These energies correspond to the following wavelengths of IR radiation: 33.7 μm and 27.82 μm, a bandwidth of ≅6 μm. In FIG. Figure 34 shows the experimental GaP IR reflection band and the calculated reflection spectrum of the oscillator from [51] located between 31 μm and 25 μm, the bandwidth is ≅6 μm. In FIG. 35 shows the GaP reflection spectrum measured by us, which practically coincides with the spectrum in FIG. 34. The calculated and experimental positions of the IR reflection bands are consistent with each other and have approximately the same width, but are somewhat offset from each other due to different crystallographic orientations of the material samples in these two experiments, as well as due to the incidence of IR radiation on the surface of the material at different angles in these experiments.

In FIG. 36 shows the characteristic temperature dependence of the electron-vibrational current in GaAs containing ECCs formed by impurity oxygen atoms. This dependence is represented by experimental points and a solid curve drawn along these points. The dashed curves represent the Gaussian dependence (16) of the contours of these bands for which the same temperature-independent value is θ = 3.5 K. The maxima of the most intense bands in this dependence in FIG. 36 are located near T _m = 439 K, T _m = 404 K and T _m = 347 K ,. These bands are due to the participation of various types of material phonons in the electron-vibrational current. The participation of these phonons in the processes of IR reflection is limited by different selection rules for different crystallographic orientations of the material, different angles of incidence of IR radiation on the material, polarization of radiation relative to the crystallographic axes of the material. Therefore, in one experiment it is not possible to measure the reflection spectra with the participation of all types of phonons that generate electron-vibrational currents. Thus, the IR reflection spectrum of GaAs shown in FIG. 37 from the book [53], is associated with two mutually overlapping bands of electron-vibrational current located in FIG. 36 at temperatures T _m equal to 404 K and 439 K. Therefore, the infrared reflection band of GaAs shown in FIG. 37 is an overlap, overlapping of two reflection bands with the participation of the same types of phonons that caused electron-vibrational currents with peaks at temperatures of 404 K and 439 K, which manifests itself in particular the profile of the strip. The expected limits of the IR reflection band in this case are determined by the temperatures (404 K-3θ) = 393.5 K and (439 K + 3θ) = 449.5 K. These temperatures correspond to the following edge energies and IR wavelengths: (33.91 ⋅10 ^-3 eV; ≅36.6 μm) and (38.73⋅10 ^-3 eV; ≅32 μm). The experimental IR reflection band of GaAs in FIG. 35 is located between the values of the wave vectors and the corresponding infrared wavelengths: (296 cm ^-1 ; ≅34.5 μm) and (260 cm ^-1 ; ≅32.21 μm). A comparison of the above results revealed the agreement of the calculated spectral positions of the IR reflection bands of the ECC in GaAs calculated from the temperature dependence of the electron-vibrational current and the experimental data.

In FIG. 38 shows a typical temperature dependence of the electron-vibrational current I in a carbon nanotube film on a quartz substrate. This dependence contains several maxima. The maximum at a temperature T _m = 593 K belongs to the most intense UEF band lying between temperatures T _m -3θ = 555.5 K and T _m + 3θ = 630.5 K. These temperatures correspond to the following energies of IR quanta and their optical wavelengths: (47.86⋅10 ^-3 eV; 25.91 μm) and (54.32⋅10 ^-3 eV; 22.8 μm) at which the experimental reflection and absorption bands are located (22.6 μm - 27.5 μm) data structures shown in FIG. 39.

In FIG. 40 shows the temperature dependence of thermoEMF containing narrow peaks of electron drag by phonons in a Ge single crystal at phonon Debye temperatures of 314 K; 359.9 K and 414 K. The Gaussian dashed curve approximates the profile of the most intense UEF band at 314 K with θ = 2.5 K. The reflection and absorption bands expected from the established dependence lie between 25.96 μm and 26.38 μm. Indeed, the Ge absorption spectrum [53] contains such a relatively long-known narrow absorption band, associated with the participation of phonons, which becomes brighter against the background of the absorption that weakens with cooling by free carriers, but does not change its width, which is characteristic of electron-vibrational spectra. The corresponding spectra are shown in FIG. 41 from [53]. This absorption band is also present in the spectra of [54]. Absorption by free carriers does not affect the electron-vibrational spectra and this IR absorption band.

Thus, it was found that the temperature dependences of the electron-vibrational currents I or the temperature dependences of the electron drag by phonons (UEF) correspond to the spectral position of the IR reflection bands of the ECC. This correspondence is characteristic not only for compounds A ³ B ⁵ , but also for other materials and structures containing ECC and seems logical.

The revealed correspondence between the temperature dependences of the electronic-vibrational transitions in the material layers on the substrates with their IR reflection spectra allows the use of material layers on the substrates for recording IR radiation in the range from 1 μm to more than 1000 μm according to the data on the effect of such radiation on the temperature of the hyperconducting transition. To register an IR study of a certain wavelength, a substrate with the corresponding phonon energy (Debye temperature of the phonons) is selected, a layer of material with a thickness of at least 4Λ is applied to the substrate, electrodes 1 and 2 are installed, the detected IR study is sent to the material between the electrodes, and the change in T _h or a change in the resistance of the material between the electrodes at a temperature near T _h . It is advisable to stabilize the temperature of the material near T _h . According to the measurement results, a conclusion is drawn about the intensity of the recorded infrared radiation. In this case, cooling of the material is not required even when recording long-wave infrared radiation, and the level of internal, intrinsic noise is determined by the value θ << T _h , which is why the claimed registration method has an advantage in terms of internal, intrinsic noise over analogs in which the material is cooled to low temperatures.

In this paragraph of the formula, it is proposed to use the established laws for recording infrared radiation with low internal noise without cooling photosensitive materials and devices.

To paragraph 11 of the formula. The temperature of the hyperconducting transition T _h , the magnitude of the Josephson effects and the frequency of the high-frequency non-stationary Josephson effect, as well as the magnitude of the Meissner effect depend on the shape of the material, on the distances between plane-parallel material boundaries, since the propagation conditions of phonons and electron-vibrational currents change when the shape of the material sample changes. In this regard, the condition of acoustoelectric synchronism turns out to be important, according to which the distances between mutually parallel material boundaries are chosen equal to or multiple W = Pv / 2, where v is the speed of sound propagating between mutually parallel material boundaries and П is the current period in the material between the electrodes. Under this condition, a significant part of the emitted phonons returns to their generation region, which affects T _h and the effects of Josephson and Meissner. The effect of acoustoelectric synchronism on these effects and on T _h is manifested if a periodic electric field with a period of P acts in the material. A periodic magnetic field with the same period of P with an induction of no more than 2 T in the material suppresses electron oscillations at the ECC with localized phonon frequencies. In this regard, to stabilize the hyperconducting and superconducting state, stabilize the temperature of the hyperconducting transition T _h , the values of the Josephson effects and the frequency of the high-frequency non-stationary Josephson effect, as well as to change the value of the Meissner effect, the thickness of the semiconductor wafer, or the thickness of the semiconductor layer on the substrate, or the thickness of the substrate , or the total thickness of the semiconductor layer and the substrate, or the distance (s) between mutually parallel boundaries of the semiconductor is chosen equal (equal) or multiple (multiple) W = Pv / 2, where v is the speed of sound propagating between mutually parallel boundaries of a semiconductor, substrate, or semiconductor and substrate, an alternating electric field and / or alternating magnetic field are created in the material between the electrodes induction V≤2 with time periods T n, measured giperprovodyaschego transition temperature T _h, the magnitude analogs Josephson effects and (or) the analog high frequency ac Josephson effect, as well as the amount or change in magnitude of the effect eysnera.

To paragraph 12 of the formula. This claim is devoted to the use of an analog of the stationary Josephson effect for converting thermal energy into direct current electric energy. An analogue of the stationary Josephson effect essentially makes it possible to convert the elastic vibrations of electrically charged particles in the composition of coherent regions into direct current electric energy. Elastic vibrations of coherent regions occur due to the recombination of electrons (holes) at electron-vibrational energy levels. Recombining electrons (holes) arise in a material under the influence of thermal generation, due to the heat entering the material from the environment. Therefore, an analog of the stationary Josephson effect is due to the thermal energy entering the material from the external environment. Therefore, heat is supplied to the material between the electrons to provide a constant electric current.

Electron-vibrational transitions between the same vibrational states of interacting oscillators, between vibrational states with the same values of vibrational quantum numbers ν and vibrational frequencies, form currents with zero frequency, i.e. direct currents, the sum of which over the vibrational states ν is an analogue of the stationary Josephson effect. These currents flow in the material between electrodes 1 and 2 and can be measured in an external circuit between these electrodes, and when the external circuit is broken, the analog of the stationary Josephson effect manifests itself in the form of a constant electric voltage of a certain polarity between electrodes 1 and 2.

Thermal energy in the material is spent on the generation of free, mobile electrons and holes, which are localized mainly at the energy level E ^{* of} coherent regions and thereby support the existence of I-oscillations and an analogue of the Josephson current (I ₀ ). To maintain a constant current I ₀ provide an influx of heat to the material from the outside at a temperature not less than the Debye temperature of phonons, at a material temperature T = T _h or at a higher temperature. Thus, the analogue of the Josephson effect in a hyperconductor structure with a tunnel thin gap of thickness d, as well as the Josephson effect in the structure of superconductors separated by a tunnel thin dielectric, converts thermal energy into electrical energy Josephson current I ₀ . This is the general property of the stationary Josephson effect in the structure of superconductors and the analogue of the stationary Josephson effect in the structure of hyperconductors. There is, however, an important difference between the stationary Josephson effect and the analogue of the stationary Josephson effect. Indeed, the width of the energy gap of a superconductor (2Δ) is usually several millielectron-volts and the voltage of the "idle" stationary Josephson effect does not exceed several millivolts. This feature prevents the technical use of the stationary Josephson effect to generate electricity through heat. In contrast, in hyperconducting tunnel structures, the energy gap between various electronic-vibrational states is a multiple of half the quantum of I-vibrations, can reach the band gap of the material and even exceed it. Therefore, in hyperconductor tunnel structures, the voltage of the “no-load” analogue of the stationary Zhdosefson effect can be E ^* / e.

An analogue of the stationary Zhdozefson effect in hyperconductor structures can be successfully used for the technical conversion of thermal energy into electrical energy.

In order to obtain electrical energy using an analogue of the stationary Josephson effect, heat is supplied to the material between electrodes 1 and 2, and a direct current in the material between the electrodes, which is an analog of the stationary Josephson effect, or similar currents from several such structures, are sequentially or parallel directed to the stationary or a mobile power consuming (consuming) device (s).

It is advisable to use an analog of the stationary Josephson effect based on hyperconducting tunnel structures to convert the energy of ambient heat into direct current energy. An analogue of the stationary Josephson effect in hyperconductor structures based on typical semiconductors allows one to obtain voltages (E ^* / e) at a load in an external circuit. When using hyperconductors with an ECC containing oxygen atoms, the voltage between the electrodes is a multiple of half the elementary quantum of the I-vibration of the nucleus in the oxygen atom, referred to as the electron charge (0.22 eV / 2e). In samples based on Si and Ge at different temperatures, these stresses are practically 0.33; 0.44; 0.55 or 0.66 volts, that is, tens of times higher than the voltages of the stationary Josephson effect in superconductors, which provides the analogue of the stationary Josephson effect with significant technical advantages compared with the well-known stationary Josephson effect in superconductors.

In FIG. Figure 42 shows the characteristic temperature dependence of the value of the analog of the stationary Josephson effect (V *) in a Si-based hyperconductor structure. Electron-vibrational centers are formed by impurity oxygen atoms. The value of the analog of the stationary Josephson effect V * is practically constant when the sample is heated from room temperature, but at 384 K it decreases sharply by 0.22 V and remains unchanged up to 570 K. Both of these voltages correspond to electron tunneling between electron-vibrational states of coherent regions with energies 0.33 eV and 0.22 eV, which are included in the spectrum of quantum allowed energies of I-vibrations characteristic of impurity oxygen atoms.

In FIG. Figure 43 shows the temperature dependence of the value of the analogue of the stationary Josephson effect in a Ge-based structure under conditions of mismatch of the impedances of the material between the electrodes and the associated slowdown device. Under such conditions, relaxation oscillations arise due to successive changes in the position of the Fermi level from one to another electron-vibrational level and vice versa.

It must be said that oxygen atoms make up about 28% of the substance in the Earth’s crust and are usually present as an impurity in semiconductor materials. So in industrial silicon, the concentration of impurity oxygen atoms can exceed 10 ¹⁸ atoms / cm ³ and it can not be significantly reduced by modern means of purification. In the absence of other types of impurity atoms, it is the oxygen atoms that form the ECC and determine the formation of coherent regions. The temperature dependences of the analogue of the stationary Josephson effect in tunnel structures based on other typical semiconductors are stepwise, which indicates the temperature dependence of the probability of electron tunneling through the gap between coherent regions and the transition of the Fermi level at certain temperatures from one electron-vibrational energy level to another electron-vibrational energy level.

The experiments confirmed the expected values of the analogue of the stationary Josephson effect, which are fractions of the electron-volt, calculated from the calculation. In principle (in wide-gap materials), analogs of Josephson effects exceeding 1 Volt are possible.

Converters of thermal energy into electrical energy based on the analog of the Josephson stationary effect can be built-in, for example, in mobile electronic devices, in cell phones, laptops for continuous recharging of power batteries due to the thermal energy of the environment, including due to the heat released by processors of the devices. Such converters will save stationary and mobile electronic devices from periodic recharging of batteries, from the need to connect to an external power supply network for charging, which is important on space, underwater, aircraft and in field conditions. Converters of thermal energy into electrical energy using an analogue of the stationary Josephson effect can be used to power luminaires, the light energy of which is ultimately converted into the heat of the environment, which hyperconducting tunnel structures convert into electric current I ₀ . Thus, it is possible to carry out the cycle and conversion of one type of energy into another type of energy: heat-electricity-light-heat, which ensures a reduction in the cost of energy supply of life and technology.

Currently, industrial production of continuously operating maintenance-free sources of electric current with a long service life with an output power of 1 to 50 milliwatts and an output voltage of about 1 Volt is carried out by US firms: Widetronix (Firefli-T, Firefli-N), City Labs (ERDIP, LCC) and BetaBatt (Trench, Fill-Jelli-Roll). Since 2014, the products of these companies cannot be imported into the Russian Federation due to sanctions restricting the supply of dual-use products to the Russian Federation. The action of such power supply elements is based on the conversion of ionizing beta radiation energy (electrons) of the nickel-63 radioactive isotope into electric current energy. Silicon transducers under beta irradiation are able to work no more than a year, although their performance is required for 20 years or more. For import substitution, a program of research, development and production of radiation-stimulated power elements is currently being implemented in Russia, in particular, including converters of radiation radiation energy into electric current energy based on radiation-resistant wide-gap semiconductors (synthetic diamond, GaN) with a total volume of tens of millions. rub. Obviously, the batteries produced and planned for development and production are inferior in terms of technical parameters and the cost of their production to heat-to-electric energy converters that use analogs of the Josephson effects in hyperconducting tunnel structures. Indeed, the use of Josephson effect analogs in hyperconducting tunnel junctions for these purposes does not require the use of radiation sources. This allows you to design and use the converters of ambient heat energy into silicon-based electric current energy directly in silicon integrated circuits for their power and cooling without significant costs in the microelectronic production of such microcircuits, ensuring their autonomous operation without maintenance and replacement during decades.

To paragraph 13 of the formula. This claim is devoted to the use of an analog of the high-frequency non-stationary Josephson effect for converting thermal energy into electrical energy. An analogue of the high-frequency non-stationary Josephson effect, as well as the stationary Josephson effect, is due to the thermal energy available in the material and due to the electrical energy introduced into the material between the electrodes from the source of external electric displacement. In essence, the analogue of the high-frequency non-stationary Josephson effect allows you to convert the internal energy of the material, the energy of elastic vibrations of coherent regions into the energy of a high-frequency electric current. To continuously produce high-frequency electricity, they provide constant access of heat from the external environment to the material between the electrodes and maintain a certain external electric displacement between the electrodes 1 and 2.

According to the law of conservation of energy, the frequencies of electron-vibrational transitions are determined by the energy difference of the electron-vibrational terms of the tunnel-coupled oscillators of coherent regions. In FIG. 25 is a power diagram of coherent regions located close to contacts 1 and 2 with the material at an external voltage V between the electrodes. Here, the horizontal dashed lines indicate the positions of the electron-vibrational levels at V≡0. If V = 0, then the electron-vibrational states of electrons and holes with the corresponding values of the vibrational quantum number ν coincide with these dashed horizontal lines. If an external voltage of magnitude V is applied between electrodes 1 and 2, the energy circuit changes and the electron-vibrational levels shift relative to each other by magnitude eV. In FIG. 25 oblique solid arrows show tunneling electron-vibrational transitions from the coherent region near electrode 1 to the coherent region near electrode 2 with a decrease in the potential energy of the tunneling charge (e) by eV. The resulting decrease in potential energy is 2 eV, since the transition is carried out by Cooper pairs of electrons. In principle, tunneling transitions are possible with an increase in energy, when the energy of the final state exceeds the energy of the initial state. This increase in the energy of tunneling electrons is possible due to the absorption of phonon energy and I-vibrations and causes cooling of the material.

, соответствующими разности энергий этих колебательных состояний, сумма которых представляет аналог нестационарного эффекта Джозефсона. Эти частоты преобразуются на ЭКЦ в частоты, попадающие в полосу пропускания замедляющего устройства, и СВЧ токи соответствующей частоты могут быть измерены. В заявленном изобретении частота аналога нестационарного эффекта Джозефсона преобразуется на ЭКЦ и может быть измерена в пределах частотной полосы пропускания связанного с материалом замедляющего устройства. Для измерения частотного спектра аналога нестационарного эффекта Джозефсона в более широком диапазоне применяют широкополосные замедляющие устройства или изменяют резонансную частоту замедляющих устройств.Electron-vibrational transitions between different vibrational states of interacting oscillators, between states with different values of vibrational quantum numbers ν and vibrational frequencies of interacting oscillators, form alternating currents with cyclic frequencies

corresponding to the energy difference of these vibrational states, the sum of which is an analog of the non-stationary Josephson effect. These frequencies are converted at the ESC into frequencies falling into the passband of the moderator, and microwave currents of the corresponding frequency can be measured. In the claimed invention, the frequency of the analog of the non-stationary Josephson effect is converted to an ECC and can be measured within the frequency bandwidth of the slowing device associated with the material. To measure the frequency spectrum of an analog of the unsteady Josephson effect over a wider range, broadband slowdown devices are used or the resonance frequency of slowdown devices is changed.

The capacities of the analogue of the high-frequency non-stationary Josephson effect at a frequency from 8 GHz to 10 GHz, coming from the material (Ge) between the electrodes into the load of the moderator connected with the material, reach several milliWatts. To obtain greater power, it is advisable to use batteries of tunneling hyperconductor structures.

The scientific and technical literature has proposed the use of the non-stationary Josephson effect in tunneling contacts of superconductors at low temperatures [55, p. 72], when a high-frequency Josephson current is supplied to the diode rectifier and converted to direct current suitable for technical applications. In this case, the Josephson tunnel contact with the rectifier converts the thermal energy from the external medium into Josephson contact into direct current electric energy released in the rectifier load. Such a converter is of little interest, since it is capable of producing millivolt voltages on a load, it requires cooling of the Josephson tunnel contacts to low temperatures, which is technically inconvenient and unprofitable.

On the other hand, current sources based on the analog of the non-stationary high-frequency Josephson effect allow one to obtain a voltage between electrodes 1 and 2 of hundreds of millivolts. Such current sources can be embedded, for example, in mobile electronic devices, in cell phones, laptops for continuous recharging of power batteries due to the thermal energy of the environment, including due to the heat generated by the processors of the device, which allows cooling the processors. The use of such current sources allows you to save stationary and mobile electronic devices from the periodic recharging of batteries, from the need to connect to an external power supply network for charging, which is important on space, underwater, aircraft and in field conditions. The electric energy obtained due to the analogue of the high-frequency Josephson effect can also be used to power the luminaires, the light energy of which is ultimately converted to the heat of the environment, which the contacts of the analogs of Josephson tunnel structures are again converted into electrical energy. Thus, the cycle and conversion of one type of energy into another type is carried out: heat - electricity - light - heat, which ensures a reduction in the cost of energy supply of vital processes and equipment.

Therefore, in order to obtain electrical energy through an analog of the high-frequency non-stationary Josephson effect, heat is supplied to the material between electrodes 1 and 2, the high-frequency current flowing between the electrodes is directed to devices that consume this current, if necessary, this current is detected, rectified, and the resulting direct current is sequentially or parallel send to the stationary or mobile device consuming (consuming) electric energy (device).

In converters of thermal energy into electrical energy based on analogues of Josephson effects (claims 12, 13 of the formula), it is not necessary to create and maintain the temperature difference in the material, which is usually necessary for the operation of heat engines and energy converters operating on other effects, which provides the claimed method with certain advantages. However, the thermodynamic formula for the efficiency (efficiency = [T ₂ -T ₁ ] / T ₁ ) remains true in the claimed method. The temperature difference [T ₂ -T ₁ ] as well as in known heat engines and energy converters is and is determined by the difference in electron energies in the initial (E ₁ ) and final (E2) state of the electronic-vibrational transition: T ₁ = E ₁ / k and T ₂ = E ₂ / k, where k is the Boltzmann constant. This temperature difference is large, it is concentrated in the ECC, has little effect on the average temperature of the material, and the conversion of thermal energy into electrical energy can be carried out with high efficiency.

To paragraph 14 of the formula. This claim is devoted to controlling the temperature of the material between the electrodes in the tunneling hyperconductor structure by changing the currents between the electrodes 1 and 2. The temperature of the material in the tunneling hyperconducting structures depends on the currents of the analogs of Josephson effects, since the energy of the material is spent on maintaining these currents. Such a dependence manifests itself in the region of near-room and higher temperatures, i.e. in the temperature range of the existence of hyperconductivity and superconductivity and is enhanced if the heat flux to the material is limited.

Changes in the temperature of the material between the electrodes can reach several tens and even hundreds of degrees.

If the inflow of heat to the material from the outside is impossible or limited, then a significant part of the internal heat of the material in the tunnel structure is spent on maintaining currents I ₀ and high-frequency current analogue of the non-stationary Josephson effect. As a result, the temperature of the material between the electrodes decreases until it becomes lower than the Debye temperature of the phonons of the material, when the hyperconducting state of the material and tunneling currents disappear.

Therefore, such structures can be used as temperature-controlled cooling elements by regulating the currents in them, which are analogues of the stationary and non-stationary high-frequency Josephson effects. The range of controlled temperatures coincides with the temperature range of the existence of hyperconductivity and super thermal conductivity. The temperature of the Josephson tunnel structure becomes lower if the Josephson current increases, since this current transfers part of the energy of the oscillations of the coherent regions to the electrical load of the moderator. Moreover, Josephson structures can have a temperature below room temperature, near room temperature, or significantly higher than room temperature, which is technically convenient, because does not require additional measures to cool or maintain a certain temperature of the material of the tunneling hyperconductor structure. Under certain conditions, analogs of the Josephson effects can be used to cool the material between electrodes 1 and 2, i.e., as the principles of operation of cooling devices without moving structural elements, silent and environmentally friendly, which have an undoubted advantage even in comparison with currently promising refrigeration processes based on ferroics .

To paragraph 15 of the formula. This claim is devoted to the regulation of analogs of the Josephson effects and the Meissner effect by changing the temperature of the material between the electrodes. In the temperature range above T _h , in the temperature range of the existence of hyperconductivity and superconductivity, the magnitude of the Josephson effects, the frequency of the high-frequency Josephson effect, the magnitude of the Meissner effect depend on the temperature of the material between the electrodes. It is proposed to use this dependence for controlling the magnitude of the Josephson effects, the frequency of the analogue of the high-frequency Josephson effect, and the magnitude of the Meissner effect. In this case, the temperature of the material between the electrodes is changed within the temperature range of the existence of zero electrical resistance and zero thermal resistance, above T _h , and the magnitude of the Josephson effects, the frequency of the high-frequency Josephson effect, the magnitude of the Meissner effect are measured or changes in these technical effects are measured.

To paragraph 16 of the formula. This claim is devoted to controlling the temperature of the hyperconducting transition T _h , the magnitude of the Josephson effects and the frequency of the high-frequency non-stationary Josephson effect, as well as the magnitude of the Meissner effect using an additional field electrode forming a rectifying contact or a metal-dielectric-semiconductor (MIS) contact with the material between the electrodes. An external field electrode is supplied with an external voltage relative to the material. If necessary, use several additional field electrodes. Additional field electrodes are supplied with direct, alternating or pulsed external voltages of direct or reverse polarity less than the voltage (s) of breakdown or destruction of the structure. The voltage applied to the field electrodes changes the potential field in the volume of the material and thereby affects the flow of electronic-vibrational currents between electrodes 1 and 2. This affects the change in the temperature of the hyperconducting transition T _h and the magnitude of the Josephson effects, the coherence length, and accordingly the magnitude Meissner effect. As a result, the change in the temperature of the hyperconducting transition T _h or (and) the change in the magnitude of the Josephson effects or (and) the change in the frequency of the high-frequency unsteady Josephson effect or (and) the change in the magnitude of the Meissner effect caused by the action of voltages on the additional field electrode (on the additional field electrodes) is measured relative material.

To paragraph 17 of the formula. The technical application of hyperconductivity and superconductivity in some cases is possible without the use of two or more electrodes. This claim sets forth a method for detecting radiation in which, for the sake of simplicity, only one electrode is used from electrodes 1 and 2, which forms a rectifying contact with the material. Constant or modulated in amplitude, or (and) in frequency, and / or in phase, and / or in polarization, and / or in the direction of propagation, and the radiation to be detected, is directed to a part of the material adjacent to the electrode; changes in current and / or frequency of a current caused by radiation in a portion of the material adjacent to the electrode; ; the results of measurements judge properties, for example, the intensity and (or) the frequency and (or) the modulation spectrum, and (or) the polarization, and (or) the direction of propagation of the detected radiation.

There is at least one coherent region near the contact. The recorded radiation is absorbed in the material and affects the vibrational state of the coherent region and its size and, accordingly, the vibrations of the electrons associated with the phonons change. As a result, the power and frequency (frequencies, spectrum) of the electrical signals coming from the material into the slowing device connected with it and into its load changes. Measurement and analysis of these changes allows us to judge the properties of the detected radiation.

To paragraph 18 of the formula. Hyperconductors are known to have characteristic optical absorption bands. In accordance with electrodynamics, bands of their optical reflection are located in the same spectral regions. The values of the reflection coefficient in such bands often exceed 50% -90%. In other words, only an insignificant part of the detected radiation penetrates the volume of the material, and a significant proportion of the recorded radiation is reflected from the material and irretrievably lost, without affecting the useful output signal of the photodetector. In this regard, it is advisable to use antireflection coatings in the working spectral region or to use a broadband method for returning reflected radiation to a material using a mirror located parallel to the surface of the material. Antireflective coatings and mirrors can reduce unproductive losses on reflection of the detected radiation to a level of less than 10%, i.e. several times.

The methods for detecting radiation according to this claim make it possible to register radiation in narrow spectral regions located in the IR wavelength range from fractions of microns corresponding to the intrinsic absorption of the material to tens and hundreds of microns corresponding to the energies of phonons localized at electronic vibrational levels.

It is possible in principle to extend the working spectral range of these methods for detecting radiation in the long-wavelength IR region, which is often preferable. In this case, a layer of material is used on the substrate, and the substrate is selected with a Debye temperature of the corresponding energy of the IR quanta to be recorded. In this case, electronic-vibrational transitions with the participation of the phonons of the substrate and the associated optical absorption bands in the material at the phonon frequencies of the substrate occur in the material layer on the substrate. To increase the wavelength of the detected radiation 2πс / р, where c is the speed of light in vacuum and p is the cyclic frequency of the phonon of the substrate, a substrate material with lower phonon frequencies p is chosen. This allows you to expand the spectral range of the photosensitivity of the considered method of detecting radiation to hundreds of microns (up to about 2500 microns) without cooling the material and to record long-wave infrared radiation. This provides a reduced level of intrinsic, internal noise with high speed.

To paragraph 19 of the formula. This claim is devoted to changing the magnitude of the analogs of the Josephson effects, as well as regulating the frequency and phase of the analogue of the high-frequency non-stationary Josephson effect and the magnitude, direction of the Meissner effect by changing the quality factor and (or) the coupling coefficient of the slowing devices associated with the material between the electrodes. The coherence length, the magnitude of the analogs of the Josephson effects, the frequency of the high-frequency non-stationary analog of the Josephson effect, as well as the magnitude and direction of the Meissner effect depend on the magnitude of the high-frequency power removed from the material between the electrodes, which is determined by the quality factor of the moderator associated with the material and the coupling coefficient of this device with the material between the electrodes. Therefore, it is possible to adjust the magnitude of the coherence length, change the magnitudes of the analogs of the Josephson effects and the Meissner effect by changing the quality factor and the coupling coefficient of the delay device with the material between the electrodes.

In this regard, in order to control the coherence length Λ, the frequency of the high-frequency non-stationary analogue of the Josephson effect and the Meissner effect, as well as to change the values of the analogs of the Josephson effects, the quality factor Q of the material connected (connected) between the electrodes of the slowdown device (slowdown devices) or ( i) change the coupling coefficient of these slowing devices with the material between the electrodes or change the quality factor (Q) and the coefficient (coefficients) of communication of the slowing device (slowing down x devices) with the material, measure the length or change in the coherence length Λ or (and) the magnitude of the analogs of the Josephson effects or (and) the change in the frequency of the high-frequency Josephson effect or (and) the Meissner effect.

To paragraph 20 of the formula. This claim is devoted to the regulation of the temperature of the hyperconducting transition T _h , the frequency of the analog of the non-stationary Josephson effect, as well as the regulation of analogs of the Josephson effect and the Meissner effect and the reduction of internal noise during the hyperconducting transition using the magnetic field that is created in the material between the electrodes. The temperature of the hyperconducting transition T _h , the magnitudes of the analogs of the Josephson effect and the Meissner effect, the frequency of the high-frequency non-stationary Josephson effect, as well as the stability of the hyperconducting state and the level of internal noise during the hyperconducting transition depend on the direction and magnitude of the magnetic field induction B≤2 Tesla in the material between the electrodes. These dependences are explained by the fact that electron-vibrational processes in the material occur with the participation of electric charges oscillating with frequencies of phonons.

The magnetic field, as is known according to the Meissner effect, is ejected from the coherent regions of the hyperconductor due to their zero electrical resistance. However, outside the coherent regions, in the regions of energy dissipation, a magnetic field with induction B≤2 Tesla acts on electrons oscillating with the phonon frequencies, suppresses charge oscillations and energy dissipation processes and thereby affects the technical characteristics of hyperconductivity and superconductivity. Therefore, in order to control the temperature of the hyperconducting transition T _h , the magnitude of the Josephson effects and the Meissner effect, the frequency of the high-frequency non-stationary Josephson effect, as well as to improve the stability of the hyperconducting state and reduce internal noise during the hyperconducting transition in the material between the electrodes, a constant, alternating, or pulsed magnetic field is created with induction B to 2 Tesla, change the direction of induction with respect to the direction of the electron-vibrational current between electrodes 1 and 2, zmenyayut frequency induction or change the magnitude, direction and frequency induction; measure the temperature of the hyperconducting transition T _h or (and) the magnitude of the Josephson effects or (and) the frequency of the high-frequency non-stationary Josephson effect and (or) the Meissner effect and (or) the level of internal noise during the hyperconducting transition.

, где S - константа электрон-фононного взаимодействия, N - концентрация ЭКЦ, τ - время жизни электронов (дырок) в материале между электродами. Указанная плотность упругих волн соответствует невырожденному материалу, что соответствует п. 1 формулы. Изменяют частоту, направление распространения упругой волны относительно направления тока между электродами, измеряют изменения температуры гиперпроводящего перехода T_h или (и) величину стационарного или (и) высокочастотного нестационарного эффекта Джозефсона (или) и частоты высокочастотного нестационарного эффекта Джозефсона или (и) эффекта Мейснера и по этим данным судят о свойствах направляемой в материал упругой волны (направляемых в материал упругих волн), например, о ее (их) интенсивности (интенсивностях). Данный пункт формулы позволяет регистрировать акустическое излучение различных частот с низкими собственными шумами без охлаждения чувствительных элементов акустического приемника.To paragraph 21 of the formula. This claim is devoted to controlling the temperature of the hyperconducting transition T _h , the frequency of the analog of the high-frequency non-stationary Josephson effect and the Meissner effect, as well as changes in the analogs of the Josephson and Meissner effects due to elastic waves directed into the material from the outside. The temperature of the hyperconducting transition T _h , the magnitudes of the analogs of the Josephson effects, the frequency of the analog of the high-frequency non-stationary Josephson effect, and the Meissner effect depend on the phonon concentration and the direction of their propagation in the material between the electrodes. This dependence is used to register and determine the properties sent to the material between the electrodes of elastic waves. Therefore, in order to control the temperature of the hyperconducting transition T _h , the values of analogues of the Josephson effects, the frequency of the analog of the high-frequency non-stationary Josephson effect, and the Meissner effect, an elastic wave (elastic waves), a sound, ultrasound, or hypersound flow with a frequency F and with power density up to

, where S is the electron-phonon interaction constant, N is the ECC concentration, and τ is the electron (hole) lifetime in the material between the electrodes. The indicated density of elastic waves corresponds to non-degenerate material, which corresponds to paragraph 1 of the formula. Change the frequency, the direction of propagation of the elastic wave relative to the direction of the current between the electrodes, measure the changes in the temperature of the hyperconducting transition T _h or (and) the value of the stationary or (and) high-frequency non-stationary Josephson effect (or) and the frequency of the high-frequency non-stationary Josephson effect or (and) the Meissner effect and these data judge the properties of an elastic wave directed into the material (elastic waves directed to the material), for example, its (their) intensity (intensities). This claim makes it possible to register acoustic radiation of various frequencies with low intrinsic noise without cooling the sensitive elements of the acoustic receiver.

The claimed invention provides high radiation resistance using its devices. Indeed, external radiation creates in the material additional to the existing (in a concentration from 2 )10 ¹⁴ cm ^-3 to 6⋅10 ¹⁵ cm ^-3 ) radiation defects of electron-vibrational nature (ECC). However, the performance of the devices is maintained until the ECC concentration in the material reaches 6⋅10 ¹⁷ cm ^-3 . Thus, the operability of devices based on the use of the claimed invention is maintained up to very high doses of radiation at which the semiconductor devices of traditional adiabatic electronics are inoperative.

The use of this invention will provide significant scientific and technical and economic effect due to the use of hyperconductivity and superconductivity in technology, in devices and devices, in the social sphere.

List of drawings

The invention is illustrated by drawings.

In FIG. Figure 1 shows a typical temperature dependence of the electrical resistance (R) of a superconducting material.

In FIG. Figure 2 shows the current-voltage characteristic of the Josephson tunnel junction of two identical superconductors from the book [24]. I ₀ is the current representing the stationary Josephson effect. The dashed straight line is the tunneling electron current in the normal state of materials at a temperature T> T _s .

In FIG. 3 light circles indicate the calculated values of elementary quanta of I-vibrations of α-, β- and γ-types in atoms with different values of atomic number Z. Dark circles indicate the experimental values of I-vibration quanta for some atoms.

In FIG. Figure 4 graphically presents the corrections to the α-type energies of atomic nuclei (ΔE _αν ) in states with vibrational quantum numbers ν = 0, 1, 2, 3, depending on the atomic number Z, calculated in the first and second order of the stationary perturbation theory. corrections are presented on a different scale for atoms with Z> 10.

In FIG. 5 shows the energy diagram of a hyperconductor. In the center, the energy diagram of the semiconductor is depicted, where E _c and E _ν denote the energies of the bottom of the conduction band and the ceiling of the valence band, F is the Fermi level. The electron-vibrational centers are located in the volume of the semiconductor, at points with coordinates r _o and r _o '.

In FIG. Figure 6 shows the temperature dependence of the electrical resistance (R) of the hyperconductor expected by the BCS theory, i.e. containing ECC semiconductor. The dashed curve corresponds to the possible transition of the material to the superconducting state at low temperatures.

In FIG. 7 shows the experimental values of the temperatures of the hyperconducting transition (T _h ) in materials with an average atomic number Z _average and containing various ECC concentrations. Inclined straight lines a and b represent the values of T _h calculated by formula (7) at the maximum (N _max ) and minimum (N _min ) ECC concentrations.

.In FIG. Figure 8 shows a section of a sample of material by a plane (XY) passing through the center of the coherence region. The dotted circle of radius Λ corresponds to the boundary of the coherence region, which is surrounded by a spherical layer whose thickness is equal to the average length of energy dissipation

.

In FIG. Figure 9 shows the cross section of the material between the electrodes 1 and 2 separated by a distance D by a plane passing along the direction between the electrodes through the center of a spherical coherent region of radius Λ = D / 2.

In FIG. Figure 10 qualitatively shows the temperature dependence of the electrical resistance of the hyperconductor between the electrodes, taking into account the temperature dependence of the coherence length (13).

In FIG. 11 shows data on electron tunneling through a dielectric layer of thickness h in InP-based structures with a concentration of conduction electrons N.

In FIG. 12 shows the characteristic temperature dependence of the electrical resistance of the material between the electrodes (D = 50 μm), measured on a germanium sample with almost intrinsic conductivity without removing excess vibrational energy, as in the prototype. The inset shows the high-temperature portion of this dependence.

In FIG. 13 shows a typical temperature dependence of the electrical resistance of a material between electrodes in a GaAs-based sample, D = 20 μm without removing excess vibrational energy, as in the prototype. The upper curve was measured by heating, and the lower curve was measured by cooling the sample.

In FIG. 14 shows the temperature dependence of the electrical resistance R, characteristic of silicon-based samples (KEF4.5), measured without removal of excess vibrational energy, as in the prototype.

In FIG. Figure 15 shows typical capacitance-voltage characteristics of a Schottky GaAs-Al contact, demonstrating the features of their frequency dependence due to the presence of an ECC in the contact region of the semiconductor.

In FIG. Figure 16 shows the capacitance – voltage dependences of the Schottky Si – Al contacts, which demonstrate a minimum capacitance at various frequencies of acoustoelectric synchronism (f _c ) and a nonmonotonic increase in capacitance with an increase in the measuring frequency.

In FIG. Figure 17 shows the inverse square of the differential capacitance of the GaAs-Au contact, which shows the height of the Schottky barrier in this contact with a height of ≈0.96 eV.

In FIG. Figure 18 shows the temperature dependences of the resistance of the germanium material between the electrodes (D = 40 μm). The upper curve in this figure is measured under the conditions of the prototype of the invention, the lower curve is measured using a retardation device, coupled and matched with the material between the electrodes.

In FIG. 19 shows a contactless connection diagram of the material between the electrodes 1 and 2 to an oscillating circuit, consisting of two coupling capacitors formed by electrodes 3 and 4, and from an inductive element 5.

In FIG. Figure 20 shows typical temperature dependences of the electrical resistance of a material (GaAs) between electrodes at various distances (D = 10, 20, and 40 μm) between them. The inset shows the inclusion of oscillatory circuits to the material near the electrodes 1 and 2.

In FIG. Figure 21 shows the characteristic temperature dependence of the electrical resistance of germanium with almost intrinsic conductivity between the electrodes when using electromagnetic coupling of the material with the oscillatory circuit at an interelectrode distance of D = 50 μm. The upper curve was measured with heating, and the lower curve with cooling of the sample.

In FIG. Figure 22 shows a typical temperature dependence of the thermal resistance (R _T ) of a material between electrodes of a germanium sample with D = 50 μm. Curve 8 was measured while heating the sample, and curve 9 was measured while cooling the sample.

In FIG. Figure 23 shows typical temperature dependences of the electrical resistance of a material (Si) at a distance of D = 22 μm between electrodes 1 and 2. The inset shows the high-temperature sections of these dependences.

In FIG. 24 shows the temperature dependence of the resistance of the InP material between electrodes 1 and 2 with D = 40 μm. The upper curve was measured with heating, and the lower curve with cooling of the sample. The inset shows the high-temperature sections of these dependencies.

In FIG. 25 shows the characteristic temperature dependence of the electrical resistance of germanium between the electrodes, measured at a current of 5 μA. The upper part of the curve was measured during heating of the sample, the lower part of the curve was measured during cooling, after the cessation of heating of the sample at a temperature of ≈510 K.

In FIG. Figure 26 shows a typical temperature dependence of the electrical resistance of germanium between electrodes, measured at a current of 0.5 μA. The upper curve was measured during heating of the sample, the lower curve was measured during cooling, after the cessation of heating of the sample at a temperature of ≈560 K.

In FIG. 27 shows a cross section of a material between electrodes separated by a distance D by a plane passing through the centers of coherent regions located near electrodes 1 and 2. The boundaries of the coherent regions are indicated by dashed circles with diameters 2Λ. The distance, the gap between the coherent regions d = D-4Λ.

In FIG. 28 is an energy diagram of coherent regions separated by a tunnel with a thin gap of thickness d in the material between electrodes 1 and 2 with equal electric potentials. Dotted arrows show the tunneling transitions of electrons.

In FIG. Figure 29 shows the energy diagram of coherent regions separated by a tunnel with a thin gap of thickness d in the material between electrodes 1 and 2, with an external voltage of V between these electrodes.

In FIG. Figure 30 shows a cross section of a structure consisting of two materials (with electrodes) separated by a dielectric layer of thickness d, a plane passing through the centers of coherent regions with diameters of 2Λ.

In FIG. Figure 31 shows the energy diagrams of heterostructures formed by two materials in contact with each other. The Latin numerals I, II, III, and IV denote combinations of materials differing in electronic affinity, work function, and band gap from [50].

In FIG. 32 shows the calculated reflection spectrum by a charged harmonic oscillator with an eigenfrequency Ω and with the highest frequency of coupled phonons ω _max = ω _p .

In FIG. 33 shows a typical experimental IR reflection spectrum 11 of a GaP single crystal containing ECCs formed by Al impurity atoms. Curves 12, 13, 14, and 15 represent the calculated components of the spectrum corresponding to various vibrational states of the ECC, and their sum coincides with spectrum 11.

.In FIG. 34 shows a typical experimental IR reflection spectrum of a carbon nanotube film grown on a quartz substrate - 15. The calculated spectrum 16 refers to the absorption component with the participation of elastic I-vibrations with energy

.

In FIG. Figure 35 shows a typical experimental IR reflection spectrum of a carbon nanotube film grown on a molybdenum substrate - 17. The calculated spectrum 18 refers to the spectrum component with the maximum I-vibration energy.

In FIG. Figure 36 shows a typical experimental IR reflection spectrum of a carbon nanotube film grown on a copper substrate — 19. Spectrum 20 is the calculated reflection spectrum of I-vibrations of a nucleus in an atom of a carbon nanotube film.

In FIG. Figure 37 shows the characteristic temperature dependence of the coefficient of thermoEMF in a GaP single crystal containing ECCs formed by sulfur impurity atoms. Capital letters indicate the essential features of this spectrum.

In FIG. 38, the solid curve shows the experimental IR reflection spectrum of a GaP - 22 single crystal, from [48]. Light circles indicate the calculated spectrum of IR reflection of the harmonic oscillator - 21.

In FIG. Figure 39 shows the characteristic GaP reflection spectrum that we measured when IR radiation was incident at an angle of 45 ° to the sample surface.

In FIG. 40 shows the characteristic temperature dependence of the coefficient of thermoEMF in GaAs containing ECCs formed by impurity oxygen atoms.

In FIG. Figure 41 shows the IR reflection spectra of semiconductors, including the reflection spectrum of a GaAs single crystal, from [53].

In FIG. 42 shows a typical temperature dependence of the coefficient of thermoEMF in a carbon nanotube film on a quartz substrate.

In FIG. 43 shows a typical IR reflection spectrum of a carbon nanotube film on a quartz substrate containing a reflection band lying between 22.6 μm and 26.5 μm.

In FIG. Figure 44 shows a typical temperature dependence of the coefficient of thermoEMF in a Ge single crystal, which contains bands of electron drag by phonons at Debye temperatures of phonons.

In FIG. Figure 45 shows the reflection spectra of Ge single crystals from [53], measured at various temperatures.

In FIG. Figure 46 shows a typical temperature dependence of the voltage V ^* , which is an analog of the stationary Josephson effect in a tunnel structure based on Si.

In FIG. Figure 47 shows the temperature dependence of the value of the analogue of the stationary Josephson effect in a Ge-based structure under conditions of mismatch of the impedances of the material between the electrodes and the associated slowdown device.

BIBLIOGRAPHIC DATA OF INFORMATION SOURCES

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Claims (21)

1. A method for efficiently implementing hyperconductivity and superconductivity in a material between electrodes that use a non-degenerate or slightly degenerate semiconductor material, place electrodes 1 and 2 on its surface or in its volume, forming rectifying contacts with the material, such as metal-semiconductor contacts, Schottky contacts , characterized in that the distance between the electrodes D is chosen no more than 4Λ, D≤4Λ, where Λ is the coherence length; the size of the area of contact of the electrode with the material a is chosen not more than a quarter of the length of the elastic wave in the material a≤λ / 4, λ = V / F, where V is the speed of the elastic wave in the material with a frequency F = 10 ⁸ Hz; establish and maintain a consistent electromagnetic coupling of the part of the material adjacent to the electrode 1, or (and) the part of the material adjacent to the electrode 2, or the material or part of the material located between the electrodes 1 and 2, with high-frequency (high-frequency) (HF) and (or ) microwave (microwave) moderating device (moderating devices), such as (such) as a coaxial line, a waveguide line, a strip line, a resonator, an oscillatory circuit, which are characterized by resonant frequencies f in the range of 10 ⁶ Hz to ¹⁵ Hz and 3⋅10 quality factors Q≥10; the material is heated to a temperature T equal to or higher than the temperature of the hyperconducting transition T _h , T _h ≤T≤T ^* ; measure the electrical and (or) thermal resistance of the material between the electrodes and (or) the Meissner effect; as a result, the electrical resistance and thermal resistance of the material between the electrodes vanish, that is, hyperconductivity and super thermal conductivity in the material between the electrodes 1 and 2 are realized, the Meissner effect is enhanced. 2. A method for the effective implementation of hyperconductivity and superconductivity in a material between electrodes according to claim 1, characterized in that the material between the electrodes is heated from temperatures ≈1.5 K or from a higher temperature to the existence temperatures of hyperconductivity and superconductivity, T _h ≤T≤T ^* stop heating or (and) create a magnetic field transverse to the current between electrodes 1 and 2 in the material with an induction of up to 2 T for a period of up to 60 s, maintain the temperature of the material in the range between T _h and T ^* ; as a result, the electrical resistance and thermal resistance of the material between the electrodes vanish, i.e. hyperconductivity and superconductivity are carried out, the Meissner effect is enhanced. 3. A method for efficiently implementing hyperconductivity and superconductivity in a material between electrodes according to claim 1, characterized in that the material size b is selected from at least four coherence lengths 4Λ, b≥4Λ, for example, a material plate thickness of at least 4Λ or a material layer thickness of at least 4Λ on a semiconductor, semi-insulating or dielectric substrate; measure T _h , and (or) Λ, and (or) the value of the Meissner effect. 4. A method for the effective implementation of hyperconductivity and superconductivity in a material between the electrodes according to claim 3, characterized in that interspersed particles are formed on the surface or (and) in the bulk of the material, forming rectifying contacts with the material, for example, metal particles with sizes not exceeding Λ, with≤Λ, in a concentration from 2Λ ^-3 to 2s ^-3 _, or (and) particles, of which each individually or a group (groups) of particles form a slowing system (slowing systems) or (and) is (are) part (parts) ) slow down system (slow down systems); measure the temperature of the hyperconducting transition T _h , and (or) the coherence length Λ, and (or) the magnitude of the Meissner effect. 5. A method for efficiently implementing hyperconductivity and superconductivity in a material between electrodes according to claim 3, characterized in that the distance between the electrodes is set in excess of four coherence lengths 4Λ by the tunnel-transparent gap of d between the coherence regions, D = 4Λ + d, 10 A ^o ≤d≤50 microns; measure the direct current in the material between the electrodes 1 and 2 and (or) its direction, polarity, or (and) measure the constant potential difference between the electrodes 1 and 2 and (or) its polarity; the measurement results are interpreted as the value of the analogue of the stationary Josephson effect and its polarity, respectively. 6. A method for the effective implementation of hyperconductivity and superconductivity in a material between the electrodes according to claim 5, characterized in that a constant voltage of arbitrary polarity is applied between the electrodes 1 and 2 less than the breakdown voltage of this structure; measuring the magnitude of the alternating voltage between the electrodes, and (or) measuring the frequency (frequencies) of the alternating voltage, or (and) measuring the magnitude of the alternating current in the material between the electrodes, and (or) measuring the frequency (frequencies) of alternating current in the material between the electrodes, and ( or) measure the phase of the voltage and (or) the phase of the current; The measurement results are respectively identified as the magnitude, frequency and phase of the analogue of the high-frequency non-stationary Josephson effect. 7. A method for the effective implementation of hyperconductivity and superconductivity in a material between electrodes according to claim 5, characterized in that two materials are used, separated from each other by a tunnel thin dielectric layer of thickness d, the size of each material is chosen at least four coherence lengths 4Λ, on the outer surface or an electrode (s) is placed in the volume of each material, forming (forming) a rectifying contact (rectifying contacts) with the material, for example a metal-semiconductor contact (s); measure the direct current between the electrodes 1 and 2 in this structure (electrode 1 - material 1 - dielectric - material 2 - electrode 2); measure a constant potential difference between these electrodes; the measurement results are interpreted as an analog of the stationary Josephson effect; apply a constant voltage between electrodes 1 and 2 with a value that does not reach the electrical breakdown voltage of this structure, measure the alternating voltage between electrodes 1 and 2 and / or alternating current in the material between the electrodes, and the measurement results are identified as an analog of the high-frequency non-stationary Josephson effect; measure the frequency (frequency) of alternating voltage between the electrodes, and (or) alternating current in the material between the electrodes, and (or) phase current and voltage; The measurement results are identified as the magnitude, frequency (s) and phase of the analogue of the high-frequency non-stationary Josephson effect. 8. A method for efficiently implementing hyperconductivity and super thermal conductivity in a material between electrodes according to claim 5, characterized in that two different materials are used to form a heterostructure; an electrode is formed on the outer surface or in the volume of each material, forming a rectifying contact with the material, for example, a metal-semiconductor contact; measure the direct current in the material between the electrodes 1 and 2 or (and) measure the voltage between the electrodes and its polarity and identify the measurement results as the magnitude and polarity of the stationary Josephson effect; a constant voltage of no more than the breakdown voltage of a given heterostructure is applied between electrodes 1 and 2, the magnitude, and (or) frequency, and (or) the voltage phase between the electrodes and (or) the current in the material between the electrodes are measured, and they are identified as the magnitude, frequency, phase analogue of the high-frequency non-stationary Josephson effect. 9. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 6, characterized in that a constant or low frequency (with the smaller of cyclic frequencies) is applied between the electrodes 1 and 2

;

) alternating voltage of V no more than the breakdown voltage of this structure; change the polarity and (or) the phase of this voltage and (or) its value; measure the polarity, and (or) phase, and (or) the frequency of the analogue of the high-frequency non-stationary Josephson effect and (or) measure changes in the magnitude of the Meissner effect. 10. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 5, characterized in that electromagnetic radiation with an intensity of up to

quantum⋅s ^-1 ⋅cm ^-2 , where N ^* is the effective number of electronic states in the allowed energy zone of the material, ς is the optical absorption coefficient and τ is the lifetime of electrons (holes) in the spectral range of intrinsic, fundamental, fundamental absorption of the material, or (i) in the spectral range of electronic-vibrational transitions of the ECC, or (and) in the spectral range of elastic vibrations with frequencies of phonons of electrons localized on the ECC; measuring radiation-induced changes in power (s) dissipated in the loads associated with the material of the moderators, or (and) measuring changes in the magnitude (s) of the Josephson effects analogs, or (and) measuring changes in the frequency (frequencies) and phase (s) of the high-frequency analog Josephson effect, or (and) measure the change in temperature of the hyperconducting transition (T _h ), or (and) measure changes in the magnitude of the Meissner effect; according to the measurement results, a conclusion is drawn about the properties of radiation, for example, about the intensity of regulatory radiation, about its polarization, about its frequency, and about its coherence. 11. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes of claim 10, wherein the thickness of the semiconductor wafer, or the thickness of the semiconductor layer on the substrate, or the thickness of the substrate, or the total thickness of the semiconductor layer and the substrate, or the distance (distance) between mutually parallel boundaries of the material or material and the substrate is chosen equal (equal) or multiple (multiple) W = PV _sv / 2, where V _sv is the speed of sound propagating between mutually parallel boundaries mi semiconductor, substrate or semiconductor and substrate; in the material between the electrodes create an alternating electric field with intensity up to SE _z / e, where S is the constant of electron-phonon interaction and E _z is the elementary quantum of I-vibrations of nuclei in atoms, but not more than the breakdown voltage, and (or) constant and ( or) an alternating magnetic field with induction B≤2 T with a period of Π; measure the temperature of the hyperconducting transition T _h , the magnitude and (or) polarity of the analogue of the stationary Josephson effect, the magnitude, and / or frequency, and (or) the phase of the high-frequency non-stationary Josephson effect, the magnitude and (or) change in the magnitude of the Meissner effect. 12. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 5, characterized in that they provide heat to the material; direct a direct current in the material between the electrodes, which is an analog of the stationary Josephson effect, or similar currents from several such structures in series or in parallel to a stationary or mobile device (s) that use electric current. 13. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 6, characterized in that they provide heat to the material, between the electrodes 1 and 2 create a potential difference of up to SE _z / e, but not more than the breakdown voltage of the structure; the high-frequency current flowing between the electrodes and representing an analog of the high-frequency non-stationary Josephson effect is sent to devices that consume this current, if necessary, this current is detected (rectified), and the direct current obtained as a result of detection is directed to a stationary or mobile device (devices) consuming electricity (device) ) 14. A method for effectively implementing hyperconductivity and superconductivity in a material between electrodes according to claim 8, characterized in that the currents representing an analog of the stationary Josephson effect or (and) an analog of the high-frequency non-stationary Josephson effect, for example, changing the value of the load resistance (impedance) for these currents; measure the temperature of the material between the electrodes. 15. A method for efficiently implementing hyperconductivity and superconductivity in a material between electrodes according to claim 7, characterized in that the temperature of the material between the electrodes is changed in a temperature region above T _h , that is, in the region of existence of hyperconductivity and superconductivity; measure the analogue of the stationary Josephson effect, and (or) the analogue of the high-frequency non-stationary Josephson effect, and (or) the frequency of the analogue of the high-frequency Josephson effect, and (or) the value of the Meissner effect. 16. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 3, characterized in that they use a field electrode forming a rectifying contact or a metal-dielectric-semiconductor (MIS) contact with the material between the electrodes, or several such field electrodes are used; constant, variable or pulsed external voltages of direct or reverse polarity with respect to a material less than the voltage (s) of breakdown or destruction of the structure are supplied to the field electrode (to the field electrodes); measure the change in the temperature of the hyperconducting transition T _h , or (and) the change in the magnitude of the Josephson effects, or (and) the change in the frequency of the high-frequency unsteady Josephson effect, or (and) the change in the magnitude of the Meissner effect, caused by the action of voltages on the field electrode (field electrodes) relative to the material . 17. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to p. 10, characterized in that they use a sample of material with one electrode (with number 1 or 2); constant or modulated in amplitude, or (and) in frequency, or (and) in phase, or (and) in polarization, or (and) in the direction of propagation, and the radiation to be detected, is directed to a part of the material adjacent to the electrode; changes in the current or (and) frequency of the current caused by the radiation in a portion of the material adjacent to the electrode are measured, or (and) changes in the magnitude and (or) frequency (frequencies) of the power modulation dissipated in the matched load of the decelerating device (s) associated with the material ); the results of measurements judge the properties of the detected radiation, for example, the intensity, and (or) the frequency, and (or) the modulation spectrum, and (or) the polarization, and (or) the direction of propagation of the detected radiation. 18. The method of effective implementation of hyperconductivity and superconductivity according to claim 17, characterized in that the coating adjacent to the electrode is coated with an antireflection coating in the spectral region of the regulatory radiation or (and) is installed parallel to the material surface at a distance of a multiple of half the radiation wavelength, a mirror, facing the work surface to the material; radiation is directed into a material adjacent to the electrode at an acute angle of not more than arctan [2Λ / (h⋅i)] to the normal direction to the surfaces of the material and the mirror, where i is the number of reflections of the radiation beam from the surface of the material or mirror; measure the magnitude and / or frequency and / or phase (polarity) of the Josephson effect (s) and (or) measure the magnitude and (or) change in the Meissner effect. 19. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 3, characterized in that the quality factor Q of the material connected (connected) between the electrodes of the slowdown device (slowdown devices) is changed or (and) the coefficient (coefficients) of the slowdown device is changed (retarding devices) with material between the electrodes; measure the length or change in the length of the coherence Λ, or (and) a change in the magnitude of the Josephson effects, or (and) a change in the frequency of the high-frequency Josephson effect, or (and) a change in the magnitude of the Meissner effect. 20. The method of effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 3, characterized in that, in the material between the electrodes create a constant, variable or pulsed magnetic field with induction (V) up to 2 T; change the direction of induction with respect to the direction of the electron-vibrational current between the electrodes or (and) change the frequency of induction or change the magnitude, direction and frequency of induction; measure the temperature of the hyperconducting transition T _h , or (and) the magnitude (s), or (and) the frequency, or (and) the phase (polarity) of the Josephson effects, or (and) the Meissner effect, or (and) the level of internal noise. 21. The method for the effective implementation of hyperconductivity and superconductivity in the material between the electrodes according to claim 11, characterized in that an elastic wave (elastic waves) is sent to the material between the electrodes, that is, the flow of sound, infrasound, ultrasound or hypersound with a frequency F and bulk density power up

where S is the electron-phonon interaction constant, N is the ECC concentration, τ is the lifetime of electrons (holes) in the material between the electrodes; change the frequency, direction of propagation or (and) the polarization of the elastic wave relative to the direction between the electrodes; measure changes in the temperature of the hyperconducting transition T _h , or (and) the magnitude of the stationary, or (and) magnitude, frequency or (and) phase of the high-frequency non-stationary Josephson effect, or (and) the magnitude of the Meissner effect caused by an elastic wave (elastic waves).

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