RU2356128C2 - Method for generation of microwave electromagnet oscillations - Google Patents

Abstract

FIELD: physics, semiconductors.

SUBSTANCE: invention is related to solid state electronics of superhigh frequencies (SHF) and may be used for generation, and also for synchronisation, detection and amplification of superhigh electromagnet oscillations. In method for generation of electromagnet superhigh frequency oscillations semiconductor material is used, on surface or in volume of material electrodes are placed, which form rectifying contacts to semiconductor, distance between electrodes D is selected within the limits from D_min= 0.2 μm to D_max=400 μm, before, after or during application of electrodes electronic-oscillating centers (EOC) are inserted in material between electrodes in concentration from 2·10¹² cm^-3 to 2·10¹⁷ cm^-3, electromagnet connection is established between material containing EOC between electrodes and SHF resonance system, for instance oscillating circuit, resonator, waveguide line that have resonance frequency within the limits from 1 GHz to frequency that is (S+2)-multiple to acoustic background that participates in electronic-oscillating transitions in material, where S-constant of electrons connection to phonons, electric voltage is applied between electrodes, and current and electric field are created in material with average intensity between 10³ V/cm and intensity of material voltage failure field.

EFFECT: creation of method for generation of electromagnet SHF oscillations with low internal noise, which provides for synchronisation of phase of oscillations and makes it possible to detect and amplify SHF oscillations.

10 cl, 7 dwg

Description

FIELD OF THE INVENTION

The invention relates to solid-state (semiconductor) microwave electronics and can be used for generation, as well as for synchronization, detection and amplification of microwave (microwave) electromagnetic waves and waves. The invention is based on the use of electron-vibrational centers (ECCs) and related electron-vibrational transitions in semiconductor materials, on the use of the ECC's ability to provide effective interaction of electrons and holes with crystal lattice vibrations (with phonons) and synchronize their vibrations with external influence. In other words, the invention is based on the use of strong electron-phonon interaction at the ECC in semiconductor materials.

The theoretical foundations of modern solid-state electronics contain the well-known adiabatic Born – Oppenheimer approximation [1], which is usually used to solve the Schrödinger equation for a crystal. In this approximation, it is believed that the possibility of energy exchange between electrons and atomic nuclei in crystals is excluded. Obviously, the adiabatic Born-Oppenheimer principle limits the range of physical processes available for research and application in materials. Indeed, P. Dirac first showed [2] that this adiabatic principle, generally speaking, is not fulfilled, and further studies [3, 4] strengthened the understanding of the limitations of the adiabatic approach to the problem of solids in general and to solid-state electronics in particular. In this regard, the existing solid-state electronics of materials, which dominates in science and technology, based on the adiabatic Born-Oppenheimer approximation, can reasonably be called adiabatic electronics. This adiabatic electronics, in principle, is not able to answer many questions about the nature of crystals and physical phenomena in them, such as super thermal conductivity, hyperconductivity, superconductivity, electron drag by phonons at Debye temperatures of phonons. It limits the study and use of materials, which, in particular, is associated with the use of the adiabatic approach.

On the contrary, the claimed invention uses the fundamental possibility of energy exchange between electrons and atomic nuclei in materials. Such electronics goes beyond the adiabatic principle (the adiabatic Born-Oppenheimer approximation). It can definitely be called non-adiabatic solid state electronics. Comprehensive studies of non-adiabatic electronics of materials, as far as is known, have not yet been carried out. In the middle of the last century, theoretical and experimental studies were carried out, which should be attributed to non-adiabatic electronics related to the study of color centers in alkali-galloid crystals. In these works, electron-vibrational centers (ECCs) in dielectric crystals were studied. The possibility of the existence of ECC in semiconductors was then questioned, and the corresponding studies were practically not carried out for decades. Meanwhile, it turned out that it is in semiconductors that ECC determine many physical properties that cannot be described in principle in adiabatic electronics, although these properties are important both for science and for technical applications. This non-adiabatic electronics includes the claimed invention and some already known technical solutions in which violations of the adiabatic principle are provided precisely by the ECC [5].

Local centers in crystals are called electron-vibrational centers (ECCs) if their equilibrium positions and vibration frequencies depend on their electronic state. The transitions of electrons to energetic electron-vibrational levels of the ECC are associated with the inevitable participation of vibrations of the crystal lattice, phonons, as well as natural (Inherent, I-) vibrations of atomic nuclei in the atoms of materials and therefore they are called electron-vibrational transitions. ECCs in crystals create a channel of energy exchange between electrons and atomic nuclei through phonons and natural (I-) vibrations of atomic nuclei, and technical solutions using such energy exchange are a fundamentally new non-adiabatic solid-state electronics.

State of the art

At present, various methods for generating, amplifying, synchronizing, and detecting microwave electric oscillations and waves of various powers are known and actually applied. For these purposes, a variety of electrovacuum devices are used: radio tubes, klystrons, traveling and reflected wave lamps, magnetrons. For the same purposes, solid-state semiconductor devices and integrated circuits are used, such as microwave transistors and microwave integrated circuits, tunneling semiconductor diodes, Gunn diodes, avalanche-span diodes (LPD). I must say that in Russia there are no v-transistors with an output power reaching 10 watts or more capable of operating at frequencies above 10 GHz with satisfactory parameters.

In recent years, phased array antennas (PAR) have been widely used in civil and special-purpose airborne and ground-based microwave radars. In this regard, there arose a need for small-sized, but sufficiently powerful, reliable and stable microwave generators. In such devices, it is preferable to use the traditional method of generating microwave oscillations using semiconductor transistors. The transistors used for such purposes must satisfy strict requirements: with a limiting amplification frequency higher than 10 GHz, low intrinsic noise, a generation power of at least 10 W, high temperature stability and reliability. The transistors produced by our industry, as a rule, do not satisfy the totality of such requirements, and therefore, in the USSR, and now in Russia, the development of transistors designed for these applications has long and almost unsuccessfully been underway. As a rule, these are devices based on semiconductors with wide forbidden energy bands (transistors based on wide-gap semiconductors) and with high drift mobilities of electrons (and holes). In particular, the Pulsar Research Institute conducted and are developing transistors based on gallium arsenide (GaAs) and indium phosphide (InP). The output power of such devices could not be raised above 2-3 watts. Then they began to develop transistors based on heterostructures with quantum wells and with high electron drift mobility, for example, on GaAl / GaAs heterostructures. Field effect transistors manufactured on such structures (HEMT transistors) have an acceptable limiting frequency of generation, relatively low intrinsic noise, rather high steepness and stability. Abroad and in Russia (Research Institute of Microwave Semiconductor Devices of the Russian Academy of Sciences), HEMTs are being developed for low-noise microwave transistors based on semiconductor compounds of gallium nitride (GaN) and aluminum nitride (AlN). So far, no industrial designs of such transistors have been produced in Russia, and foreign suppliers of such transistors sharply limit the volume of supplies to impede the use of such devices in Russian special equipment.

The internal noise of semiconductor devices is mainly caused by fluctuations in the motions of the carriers of electric charges in terms of degrees of freedom that are permissible for them. In accordance with thermodynamics and statistical physics, for each degree of freedom of a particle at an absolute temperature T there is an average energy equal to kT / 2, where k is the Boltzmann constant, T is the absolute temperature, and 3kT / 2 has an energy of three degrees of freedom of an electron (hole) . Fluctuations of this electron energy in semiconductor materials cause a certain level of noise from devices created on these materials. One way to reduce intrinsic noise (not counting material cooling) is to reduce the number of degrees of freedom of mobile electrons. So, in planar semiconductor heterostructures they create two-dimensional layers of conducting electrons, where they have only two degrees of freedom (2D electron gas) and, accordingly, less noise. Even smaller noises are created by electrons in one-dimensional conductors (in quantum fibers), where they have only one degree of freedom. However, the creation of quantum filaments and powerful devices based on them is currently difficult. The manufacture of devices based on two-dimensional electron gas in heterostructures is also a complex task that is being solved by various scientific organizations. Appropriate methods for generating microwave oscillations are complex, expensive and do not always meet the technical challenges.

Thus, there is an urgent need to create methods (and devices that implement such methods) designed to generate (electric) electromagnetic microwave oscillations and waves with sufficient power and low noise level in the solid-state design, which allow detecting, synchronizing and amplifying microwave oscillations.

Analogs and prototype of the invention

As an analogue of the invention should indicate a method of generating microwave oscillations using a Gunn diode [6]. The action of the Gunn diode is based on the transition of electrons in strong electric fields from one minimum of the conduction band of a semiconductor material to another minimum of the conduction band, which lies at a higher energy, where the effective mass of the electron is greater than in the first minimum. The current-voltage characteristic of the semiconductor material in the Gunn diode in the region of strong electric fields contains a region with negative differential resistance, as a result of which electrical inhomogeneity and electrical instability in the form of moving electric domains appear in the material. The birth and drift of electrical domains between the diode's electrodes causes current oscillations in its external circuit. The period of such oscillations usually corresponds to the microwave range. However, in terms of the level of internal noise, in the stability of the generation frequency and in the durability of the diode and its reliability, this generation method is inferior to the methods using transistors.

As a prototype of the claimed invention, it is advisable to indicate the method of generating microwave oscillations closest to the invention in terms of features, implemented in avalanche-span diodes [6]. The current-voltage characteristic of the avalanche-span diode (LPD) does not contain a section with negative differential resistance, as in the claimed invention. The prototype uses a sample of a semiconductor material with a thickness of about 15 μm, on the flat surfaces of the sample establish electrical contacts to the material with an area of up to 10 ^-2 cm ² , one of which is usually made rectifying, capable of providing injection of electrons into the material, the sample with electrodes is installed in a matched with it a resonator, waveguide or other (resonant, decelerating) device, an electric voltage of a polarity is applied between the electrodes at which electrons are injected into the material through a rectifying contact, and create an electric field in the material with a strength comparable to the electric breakdown field of the semiconductor material. As a result, microwave oscillations with a power of 1 to hundreds of watts occur in the material (and in the associated slowing system). At a frequency of 50 GHz for Si material, the prototype provides a efficiency of not more than 20% with a minimum noise ratio of 22 dB, which increases with an increase in microwave power output to 55 dB. Note that in HEMT transistors the noise ratio is units of dB. This difference in noise parameters is mainly associated with the presence of recombination processes in the LPD and with the practical absence of recombination in HEMT transistors.

In addition, methods for generating microwave electric oscillations based on the use of the Gunn effect or on the use of an LPD do not allow synchronization of the phases of oscillations of two or more generators operating on these principles with sufficient accuracy and stability, although such synchronization of several generators is in principle desirable, for example , in phase antenna array systems.

Prototype criticism

Thus, the analogues and the prototype of the invention have a high level of intrinsic noise and do not allow synchronizing the phases of microwave oscillations of two or more devices (generators) based on these methods.

SUMMARY OF THE INVENTION

The claimed invention aims to create a method for generating electromagnetic microwave oscillations and waves with low internal noise, providing synchronization of the phase of the oscillations and allowing the detection and amplification of microwave oscillations.

This objective of the invention is achieved by the fact that according to claim 1, a semiconductor material is used, for example, in the form of an industrial plate, electrodes are placed on the surface or in the bulk of the material, forming rectifying contacts to the semiconductor, for example, metal-semiconductor contacts (Schottky contacts), distance between the electrodes D is selected in the range from D _min = 0.2 μm to D _max = 400 μm, before, after or during the deposition of the electrodes, electron-vibrational centers are introduced between the electrodes in a concentration of 2 · 10 ¹² cm ^-3 to 2 · 10 ^-17 cm ^-3 , establish the electromagnetic coupling of the material containing the ECC between the electrodes with a microwave resonance system (with an oscillating circuit, resonator, waveguide line) having a resonant frequency in the range from 1 GHz to frequency, (S + 2) -fold frequency of the acoustic phonon participating in electron-vibrational transitions (processes) in the material, where S is the coupling constant of electrons with phonons, an electric voltage is applied between the electrodes and a current and electric field are created in the material with medium intensity between 10 ³ V / cm and the field strength of the electric breakdown of the material, as a result, microwave electromagnetic waves and waves appear in the material (and in the resonance system to which the material is connected).

According to claim 2, in the method according to claim 1, the ECC is introduced only in the depletion region or in the depletion region of the material between the electrodes, for example, in the parts of the material adjacent to the electrodes.

According to claim 3, in the method according to claim 2, in order to increase the power of microwave oscillations (in order to increase the efficiency), the distance (distance) (W) from the material between the electrodes to the surface (surfaces) bounding (bounding) the material is selected such that it satisfies (they satisfied) the condition (conditions) of acoustoelectric synchronism, that is, it is equal to or a multiple of W = ϖV _sv / 4π, where V _sv is the speed of sound along the direction (s) W and ϖ is the cyclic frequency of microwave generation.

According to claim 4, in the method according to claim 2, in order to increase the generated microwave power and reduce the noise level in the material between the electrodes, a magnetic field is created with induction from 0 to 2 T, directed along streamlines in the material between the electrodes.

According to claim 5, in the method according to claim 2, in order to increase the power of microwave oscillations and reduce internal noise in the material, a magnetic field is created that is normal to the current lines in the material between the electrodes with induction from 0 to 4 ϖ ² m / e where ϖ is the cyclic frequency of microwave generation, m is the effective mass of the charge carrier in the material, e is the electron charge.

According to claim 6, in the method according to claim 2, in order to change, control the generated microwave power, an additional field electrode or several additional field electrodes are placed, for example, forming rectifying contacts to the material between the electrodes, between the material and the additional electrodes, or between the additional electrodes apply bias voltages with values less than the breakdown voltage of the contact with reverse polarity and not more than ϕ / e with direct polarity of the bias on the contact, where ϕ is the sweat height cially barrier in contact, and e - the charge of an electron.

According to claim 7, in the method according to claim 6, in order to synchronize the phase of microwave oscillations between two or more electrodes or between one or more electrodes and material, an alternating synchronization voltage is applied with a frequency and a predetermined phase of microwave generation or at predetermined establishment moments the zero phase of the microwave generation apply short voltage pulses with a duration of less than 2 π / ϖ, where ϖ is the cyclic frequency of the microwave generation.

According to claim 8, in the methods of claim 7, in order to control the frequency or phase of the microwave oscillations, the frequency or phase of the synchronization voltage is changed.

According to claim 9, in the methods according to claims 1 to 8, in order to implement non-contact optical regulation of the microwave power, the material between the electrodes is illuminated in the spectral range of the optical absorption of the ECC or material or in the spectral range of the optical absorption and ECC and the material and the illumination intensity is changed in in the range from I = 0 to I = N _С / (ξτ), where N _c is the effective number of electronic states in the conduction band, ξ, is the optical absorption coefficient, and τ is the electron lifetime in the material between the electrodes.

According to claim 10, in the method according to claim 9, in order to detect or amplify microwave oscillations in the material between the electrodes, a current and an electric field strength corresponding to the pre-generation mode (i.e., the beginning of the superlinear portion of the current-voltage characteristic of the material, usually located in the region electric field with a strength of about 10 ³ V / cm to 10 ⁴ V / cm) to be (to be) detecting or strengthening the microwave signal (s) is fed to an additional (optional) or the electrodes are not fed osredstvenno into the material between the electrodes microwave or (and) optical signal (s), resulting in the material and in the resonance system formed by the microwave oscillation contain information about the detected signals to be amplified or in the form of the amplitude and phase generated by the microwave oscillation and waves.

The claimed invention is characterized by a combination of distinctive features. Namely, by placing electrodes on the surface or in the volume of the semiconductor material, forming rectifying contacts with the material, choosing a certain distance between the electrodes, introducing electron-vibrational centers into the material in a certain concentration, a certain distance from the material between the electrodes and the surfaces of the semiconductor material, creating between electrodes of electric current and electric field of a certain magnitude, the placement of additional (field) e ektrodov forming a rectifying contact to a material application to the field electrodes of constant and variable stress, lighting material in a particular spectral region with a certain intensity, the establishment of a material of a magnetic field with a certain orientation, and intensity, by manipulating the polarity of voltages to the field electrodes and their value within certain limits.

Thus, the claimed method of generating microwave electrical oscillations meets the criteria of the invention of "novelty."

Comparison of the claimed method of generating microwave electromagnetic waves with a prototype and other technical solutions in the art did not reveal technical solutions that have the specified set of distinctive features. This allows you to make a reasonable conclusion about the conformity of the claimed technical solution to the criteria of the invention "significant differences".

Really:

It is known that acoustic (A), optical (O) [7-8], as well as intrinsic (Inherent, I-) [9-11] elastic vibrations and waves of such vibrations can exist and propagate in crystals. Acoustic vibrations are time-periodic displacements of the unit cells of the crystal (the centers of mass of the cells) relative to each other (relative to the center of mass of the crystal) and can exist both in simple crystals, when the unit cell contains one atom, and in complex crystals, when the unit cell contains several atoms. Optical vibrations of a crystal (crystal lattice) are displacements of atoms with respect to each other inside a unit cell (displacements of atoms relative to the center of mass of a cell) that are periodic in time and can exist in crystals having two or more two atoms in a cell. Natural (Inherent, I-) vibrations (α, β, and γ types) are time-periodic displacements of the atomic nucleus relative to its electron shell (relative to the center of mass of the cell) and can exist in any molecules and crystals. Elementary quanta of acoustic and optical vibrations and waves are called phonons, I-vibrations are also quantized. The energy of the quantum of I-oscillations significantly (5-10 times) exceeds the maximum energy of the acoustic phonon and exceeds (4-5 times) the maximum energy of the optical phonon. These types of oscillations are usually described in the approximation of a linear relationship between the displacements of the particles making up the crystal and the forces arising from it. Accordingly, each atom in a crystal can be thought of as two coupled oscillators. One of these oscillators reflects atomic vibrations with phonon frequencies (p), and the second oscillator is its own (Inherent, I-) oscillator, which reflects the periodic displacements of a nucleus in an atom with a cyclic frequency of I-oscillations (ω).

Most often, it is believed that the displacements of atoms in the crystal and the elastic forces caused by them are linearly related to each other, i.e. their vibrations are harmonic. In this approximation, the classical equation of motion of an atom in a node of a crystal lattice in the most general form can be written as follows:

F=F'/M, запишем его в видеwhere x is the displacement of the atom from the equilibrium position, M is the mass of the atom, the coefficient g> 0, F 'is the amplitude of the external force arising from the displacement of the atomic nucleus relative to the electron shell with the cyclic frequency of I-oscillations (ω). Dividing both sides of equation (1) by M and denoting r = g / 2M, p ² = k / M,

F = F '/ M, we write it in the form

If r, p and F are time independent, then this equation with constant coefficients describes the forced oscillations of a damped harmonic oscillator [12], and its solution can be written as follows:

where is the amplitude of the forced oscillations

depends on the attenuation r and on the frequencies p and ω.

The coefficient r describes the damping of the oscillations or the loss of vibrational energy by the oscillator, p is the cyclic frequency of the acoustic wave, i.e. the phonon frequency in our case, ω is the frequency of the I-vibrations of the nucleus in the atom of the material.

The change in the phase (δ) of forced oscillations relative to the phase of the external force is described by the following relationships:

It follows from expression (3) that, over time t, for r> 0, the free oscillations described by the term containing the factor e ^-rt quickly damp and stop, however, only forced oscillations arise and will occur with the phase described by expressions (5). It can be seen from expressions (4) and (5) that the phase shift δ of the forced oscillations relative to the phase of the driving force is rigidly determined by the cyclic frequency of the natural vibrations of the ECC (ω), the cyclic frequency of the phonons associated with the ECC (p) and the damping of the vibrations (r). Thus, there is a real opportunity to create forced ECC oscillations with a given phase, determined by the amplitude and phase of the external coercive effect on the ECC. In our case, the role of external influence is played by the microwave voltage or pulse voltage supplied to the additional electrodes. These voltages at certain times create depletion of the material under the additional electrode or injection of charge carriers through contact into the material, thereby affecting the process of recombination of charge carriers on the ECC, and therefore, on the phase of the generated microwave oscillations. This possibility of controlling microwave oscillations of the ECC is proposed for use in claims 5 and 6 of the claims for detecting and synchronizing the generated microwave oscillations and waves.

It can be seen from expression (4) that the amplitude of the forced oscillations H is directly related to the amplitude of the driving force F (for certain values of other parameters: p, ω, r), which allows us to use this method to amplify microwave oscillations and waves.

If the cyclic vibrational frequencies of the ECC (ω) and phonons (p) in formulas (4 and 5) are interchanged, then the physical meaning of the formulas will not change. Consequently, the eigenoscillation of the ECC with respect to phonons and phonons with respect to the vibrations of atomic nuclei in the ECC can also perform the technical function of a synchronizing signal. Therefore, the amplitude and phase of forced vibrations of the ECC can be changed by changing either the amplitude and phase of the natural vibrations of the ECC or by changing the amplitude and phase of the phonons associated with the ECC. This feature of the physical properties of materials containing ECC is used in the claimed invention to synchronize and change the phase of the generated microwave oscillations, as well as to amplify microwave oscillations.

The analysis of equation (2) and finding its solution (3) in general is difficult. Therefore, special cases are considered. Consider the (idealized) important case of the absence of attenuation when r = 0. In real cases, the coefficient r does not vanish, which is why the expansion of discrete oscillation frequencies into frequency bands of a certain width is connected, as well as the limitation of oscillation amplitudes, which contributes to the stability of solutions of the equation (stability of the oscillation generation process).

In the absence of attenuation (when r = 0), the equation of motion is simplified:

and his decision

This solution x (t) is periodic only in the following four cases:

Решение x(t) имеет период, совпадающий с периодом возмущающей силы 2π/ω и зависящую от p и ω амплитуду колебаний

a) (Harmonic oscillations).

The solution x (t) has a period that coincides with the period of the perturbing force 2π / ω and the amplitude of the oscillations depends on p and ω

b) (Subharmonic oscillations). C ≠ 0. The solution x (t) has the shortest period 2π / p equal to the period of free oscillations of the oscillator, which is n times greater than the period of the external force 2π / pn. The frequency p = ω / n, n is any integer not equal to 1.

c) (Ultragarmonic oscillations). C ≠ 0. The solution x (t) has a period of 2 πm / p equal to the period of an external force. The frequency p = mω, m is any integer not equal to 1.

d) (Ultrasubharmonic oscillations). C ≠ 0. The solution x (t) has a period of 2πm / p, and the external force has a period of 2πm / np, i.e. the oscillation period is n times greater than the period of external force and m times greater than the period of free oscillations, p = mω / n, n and m are integer coprime numbers.

In accordance with paragraph a), in addition to well-known optical and acoustic vibrations, there are harmonic vibrations in the ECC-containing crystal with frequencies of the perturbing force, i.e. with frequencies of natural (I-) oscillations of the core. The set of these frequencies is described by the formula of a harmonic quantum I-oscillator ω (ν) = ω (1/2 + ν), where ω is the classical frequency of this oscillator, the vibrational quantum number is ν = 0, 1, 2, ... The smallest of these frequencies is ω / 2 significantly exceeds the maximum frequency of acoustic and optical vibrations. The elementary quanta of α-type I vibrations (ħω) in atoms with atomic numbers 8≤Z≤80 lie between 220 meV for an oxygen atom with Z = 8 and ≈400 meV for atoms with Z → 80. For comparison: the largest quantum of optical vibrations usually does not exceed 60 meV, acoustic quanta usually do not exceed 25 meV.

In accordance with paragraph b), among the elastic vibrations of the ECC-containing crystal, there are subharmonic vibrations whose frequencies are n = 2, 3, 4, ... times less than the frequency of the disturbing force ω.

In accordance with paragraph c), among the elastic vibrations of the ECC-containing crystal, there are ultraharmonic vibrations, whose frequencies are m = 2, 3, 4, ... times higher than the frequency of I-vibrations with frequency ω. These frequencies are offset by ω / 2 relative to the frequencies described in paragraph a).

In accordance with paragraph d), among the elastic vibrations of the ECC-containing crystal there are ultrasubharmonic vibrations with frequencies mω / n, which for m <n can coincide with the frequencies of acoustic or optical phonons.

From this analysis of the solutions x (t) it follows that the frequencies of harmonic oscillations ω (1/2 + ν) are possible, of which the frequencies ω and ω / 2 are important. With subharmonic oscillations, frequencies ω / n are possible for n = 2, 3, ..., with ultrasubharmonic oscillations, frequencies (m / n) ω are possible, for n = 2, 3, ... and m = 1, 2, ... Among these frequencies, those are important frequencies that are less than ω. Many of these frequencies fall into the spectrum of allowed phonon frequencies p. Of particular importance are those frequencies that coincide with the frequencies having the highest phonon density in the crystal. Such vibrations (phonons) are effectively amplified by the energy of natural vibrations and have the ability to propagate through the crystal, participate in electronic-vibrational transitions of the ECC, which is fundamentally important for the implementation of the claimed invention.

It should be noted that, in contrast to amplification, detection and synchronization of microwave oscillations, for example, it is not possible to efficiently convert frequencies in this method, because in solving the equation of motion x (t) (see formulas (3) and (7)) there are no sums or frequency differences in the final forced signal.

Consider another case where the time dependence of the coefficient p = p (t) is important due to the natural vibrations of the nucleus, and the action of an external force can be neglected by setting it equal to zero: F = 0. Taking into account that the dependence p (t) is caused by I-vibrations of the atomic nucleus with frequency ω, we can put p ² = δ '+ ε' cos ωt. Then equation (6) is converted to the Mathieu equation [12]

The solutions of this equation are periodic and stable in some areas on the plane with rectangular coordinates δ 'and ε'. Some boundary points of the solution stability domains correspond to harmonic oscillations with frequencies ω or ω / 2. In addition, for this equation, there can exist all types of periodic solutions considered in the case of forced oscillations: subharmonic, ultraharmonic, and ultrasubharmonic oscillations of any order (with any combination of the values m = 1, 2, ... and n = 2, 3, ...).

Thus, thanks to the ECC in crystals, in addition to acoustic and optical vibrations, vibrations with a wide frequency range are possible. Those frequencies that fall into the spectrum of optical or acoustic vibrations (phonons) amplify these vibrations, cause an increase in the number of corresponding phonons due to the energy of I-vibrations excited by the recombination energy of electrons (and holes) at the ECC levels. These phonons gain an advantage for participating in electronic-vibrational transitions and in the generation of microwave oscillations with the indicated frequencies. This is possible due to the fact that vibrations with such frequencies can propagate in the bulk of the crystal and affect kinetic effects, electronic vibrational transitions, providing the possibility of generating microwave electromagnetic waves and their amplification due to the energy of electronic vibrational transitions.

It is also known that the interaction between ECCs can cause a change in the frequency spectrum of acoustic vibrations. On figa solid curve 1 shows the dispersion branch of acoustic vibrations (acoustic phonons) ideal (defect-free crystal). This branch reaches the frequency p = 0 in the center of the Brillouin zone (in the vicinity of the zero wave vector), which is typical only for acoustic dispersion branches. The dashed curve 2 in FIG. 1a represents an acoustic dispersion branch in a crystal containing ECS. Figure 1a shows that the introduction of an ECC into the crystal caused an increase in the frequency of acoustic vibrations (p) in the center of the Brillouin zone from p = 0 to a certain value p *> 0. It can be seen from FIG. 1b that near the minimum of the dispersion (dashed) curve, a peak in the phonon frequency density G (p), phonon density of states 3, which is absent in a defect-free crystal, has formed. Thus, the elastic interactions of the ECC with each other cause the appearance of an increased density of acoustic phonon states near the center of the Brillouin zone. The frequency position of the maximum of the function G (p), generally speaking, depends on the degree of interaction of the ECC with each other, that is, on the average distance between the ECC and on the ECC concentration. It was found that at ECC concentrations of not more than 5 · 10 ¹⁵ cm ^{-3, the} maximum G (p) near the center of the Brillouin zone in silicon lies near the frequency p * = 4π · 2 · 10 ¹⁰ Hz, which corresponds to the microwave range. At even higher ECC concentrations, the maximum G (p) shifts to the region of high frequencies. It is known from the theory of scattering of electrons (and holes) in crystals that it is long-wave phonons with a wave vector near the center of the Brillouin zone that determine the effective scattering and mobility of charge carriers, since the probability of their interaction with charge carriers is greatest. In this regard, such phonons are especially active in the electron – phonon interaction at the ECC, especially since the density of their states (and, consequently, their average number) in the crystal increases significantly with the introduction of ECC. These features determine the participation of phonons with the indicated frequency in electron-vibrational processes at the ECC in strong electric fields and the possibility of generating microwave oscillations in materials containing ECC. In different semiconductor ECC-containing materials, the maximum G (p) of acoustic phonons is located at slightly different frequencies.

To claim 1 of the claims . The experimental current-voltage characteristics (I – V) of the material containing the ECC between the electrodes separated by the gap D are nonlinear, the current density depends on the electric field strength, on the intensity and spectral composition of the external illumination, and also on the magnitude of the induction and direction of the magnetic field relative to the electric current lines in the material .

Figure 2 presents the arrangement of the electrodes 4 and 5 on the surface of the material, separated by a gap D, with which the material was connected to an external constant voltage source and measured static I-V characteristics (by the method of ammeter and voltmeter). ECC was introduced into the materials by irradiating them with fast electrons with an energy of about 1 MeV with an integrated dose of up to 10 ¹⁸ cm ^-2 and ECC concentrations of not more than 5 · 10 ¹⁵ cm ^{-3 were created} . ECCs predominantly represented associations of impurity oxygen atoms with vacancies. Fast electrons generate vacancies in the material that are populated by impurity oxygen atoms, which are usually present in the material in an electrically inactive state at a concentration of at least 10 ¹⁷ cm ^-3 .

Figure 3 presents typical static I – V characteristics of a GaAs sample with aluminum electrodes and with a gap between the electrodes (D = 100 μm). Curve 6 in Fig. 3a represents the I – V characteristic of this sample, which was measured at room temperature in the dark, curves 7 and 8 were measured at different intensities of illumination in the region of intrinsic optical absorption of the material. Figure 3b shows the I – V characteristic of GaAs material between the electrodes (D = 25 μm) at a nitrogen temperature (78 K) in the dark — curve 9 and under illumination — curve 10, the I – V characteristic 11 was measured at room temperature in the dark, and the I – V characteristic 12 was measured under illumination . Analyzing the I – V characteristics shown in FIGS. 3a and 3b, we came to the conclusion that the material has photosensitivity in both weak and strong electric fields at room and low temperatures.

Figure 3 shows that the I – V characteristics of the material between the electrodes are superlinear, having several sections in which the current I is described by a power-law function of the electric field strength E: I = E ^µ . Moreover, µ takes on certain values. In weak fields, when Ohm's law holds, µ = 1. With a further increase in the field strength, μ successively takes on the values 1.25; 1.5; 5; 10. We attribute these deviations of the I – V characteristic from Ohm's law with field ionization of the ECC from various vibrational states.

Figure 4 presents typical current-voltage characteristics of the GaAs material between electrodes with D = 25 μm, measured at room temperature, without illumination of the material, in the dark. Curve 13 was measured without a magnetic field, curve 14 was measured in a magnetic field with induction B = 0.5 T, directed normal to the current lines in the material, curve 15 was measured in a magnetic field with B = 1.5 T in the same orientation, normal to the current in the material. The oblique dashed lines in Fig. 4 denote the inclination to the coordinate axes corresponding to Ohm's law. Figure 4 shows that in the region of weak electric fields there is magnetoresistance (Gaussian effect) in the form of a decrease in current I for each value of the electric field E. In the region of strong electric fields, where Ohm's law is violated, the I – V characteristics strongly depend on the magnetic field induction, which is not described by the Gauss effect and represents another previously unknown technical effect. If the induction is directed normal to the current in the material between the electrodes, then the I – V characteristics tend to saturate up to the field strength of the breakdown of the material at E> 10 ⁵ V / cm in magnetic fields, in the region of strong electric fields. A magnetic field oriented along streamlines in the material between the electrodes has practically no effect on the shape of the I – V characteristic of the material, which is to be expected, guided by the action of the Lorentz force on moving charge carriers. We associate this behavior of the I – V characteristic of the material with the presence of ECC, with electronic-vibrational processes, since in the non-containing ECC materials the indicated dependence of the I – V characteristic on the magnitude and orientation of the magnetic field does not appear (and should not occur).

Indeed, the electron at the ECC can be represented as a charged oscillator with the effective electron mass m and electron charge e. The equation of motion of this oscillator, taking into account the action of the Lorentz force in a magnetic field, can be written as follows:

where X is the generalized (configurational) coordinate, ϖ is the cyclic frequency of the electron oscillations, B is the projection of the magnetic field induction on the normal to the direction of the velocity of the charge carrier (dX / dt). The term containing the velocity takes into account the action of the Lorentz force on the electron when the velocity and induction (B) are mutually orthogonal. This equation (9) admits an oscillating solution provided

In other words, oscillatory movements of the oscillator with a frequency ϖ are possible when B is not too large. If the oscillation frequency of the electron associated with the ECC is fixed and determined by the properties of the electron-vibrational center, then with an increase in B to the value B = 4mϖ ² / e, determined by inequality (10), the center oscillations will become impossible. If an electron participates in a complex center oscillation with several independent frequencies, then as B increases, the oscillations with frequencies in order of increasing order will subsequently be suppressed by the magnetic field. In principle, it is possible to choose a value of B at which oscillations of electron-vibrational centers with any frequency will be suppressed. This seems to be the mechanism for suppressing ECC oscillations in a magnetic field. Setting m equal to the effective mass of the electron and the minimum cyclic frequency of the acoustic phonon p = ϖ = 2π · 1.25 · 10 ¹⁰ sec ^-1 , from relation (10) we obtain the minimum value of the critical magnetic field strength for silicon at which vibrations with frequencies from 0 to p suppressed, equal to B = 0.25 T. Thus, it is clear that in order to suppress ECC oscillations with a frequency of one acoustic phonon, magnetic fields with B≥0.25 T are needed. To suppress oscillations with a total frequency S of such phonons, magnetic fields with B = S · 0.25 T are required. Taking into account that for the ECC in silicon and other semiconductors the S value does not exceed 5, the maximum magnetic field induction necessary to suppress ECC oscillations with a frequency S of phonons should exceed 1.25 T. The experimental results are consistent with the given estimate of B.

In the experiment, a constant current was generated between the electrodes in the material, a magnetic field was created in the material normal to the current lines, its induction was changed from 0 to 2 T, and the change in the electric field strength in the material (dE) was measured depending on the change in induction (dB) . The corresponding experimental dependence of dE / dB on B is shown in FIG. 5 for a silicon (Si) material. This dependence has extrema located above the induction axis (B), equidistant from each other. The induction values at the minima of this dependence correspond to the greatest suppression of ECC oscillations with frequencies of 1, 2, ..., 5 phonons. If we take for the effective mass of the electron in silicon "heavy mass" m = 0.98 m _o , where m _o is the rest mass of the electron, then the cyclic frequencies of the minima of the dependence dE / dB are proportional to 2π · 2.1 · 10 ¹⁰ s ^-1 , ranging from p _min = 2π · 2.1 · 10 ¹⁰ s ^-1 to p _max = 2π · 1.26 · 10 ¹¹ s ^-1 and correspond to the participation in the ECC oscillations of 1, 2, 3, 4, and 5 acoustic phonons . From figure 5 it is seen that the ECC fluctuations are absent (suppressed) when B> 1.3 T, which is also consistent with preliminary estimates of the largest value of B affecting the I-V characteristic. Similar results on the suppression of these ECC vibrations in magnetic fields with induction up to B = 2 T were obtained on other materials (Ge, GaAs, InP, InAs, GaInAs) with a slight difference in the phonon frequencies involved in electron-vibrational processes at ECC.

The obtained experimental data on the change in the I – V characteristics of semiconductor materials under the influence of a magnetic field definitely confirm the existence of vibrations of charged ECCs with microwave frequencies (in the range from about 1 GHz to 130 GHz in Si, GaAs, InP, and up to hundreds of GHz in materials with lower effective masses electrons). This is of practical interest. In paragraph 1 of the claims, it is proposed to use such oscillations of charged ECCs to generate microwave oscillations and waves.

According to electrodynamics, accelerated moving electric charges emit their kinetic energy in the form of electromagnetic waves and waves [13]. In the process of intrinsic (I-) oscillations, the electrons localized on the ECC perform oscillatory movements with phonon frequencies, experience periodic accelerations, and, according to electrodynamics, dissipate their energy in the form of electromagnetic waves and waves. Due to the quantization (discreteness) of vibrational states, they can emit at phonon frequencies or at frequencies that are multiples of phonon frequencies, causing damping of oscillations at nonzero values of the damping coefficient (r) in expressions (3-5).

Harmonic vibrations of the ECC can, in principle, be three-dimensional. Then the electron oscillation frequencies at the ESC are described by the formula p [(1/2 + ν ₁ ) + (1/2 + ν ₂ ) + (1/2 + ν ₃ )], where p is the frequency of the phonon associated with the ESC, ν ₁ , ν ₂ , ν ₃ are vibrational quantum numbers that independently take integer values 0, 1, 2, ... Harmonic vibrations can be two-dimensional and their vibration frequencies are described by the formula p [(1/2 + ν ₁ ) + (1/2 + ν ₂ )].

The harmonic vibrations of the ECC can be one-dimensional (linear), and the frequencies of such vibrations are described by the formula of the harmonic oscillator p (1/2 + ν), where ν = 0, 1, 2, ... The minimum vibrational energy is achieved when ν ₁ = ν ₂ = ν ₃ = 0. In the case of three-dimensional oscillations, this minimum is 3p / 2, in the case of two-dimensional oscillations it is equal to p, in the case of one-dimensional oscillations, their minimum energy is p / 2.

Optical and thermoelectric experiments have convincingly shown that the vibrations of the ECC and the associated electrons and phonons are one-dimensional, since the minimum vibrational energy of the ECC coincides with ħp / 2 or with ħω / 2, which is possible only with one-dimensional linear oscillations. It is in this case that electromagnetic radiation of energy is possible. Indeed, if the ECC vibrations were three-dimensional or two-dimensional, then the center electron would move in circular orbits (orbitals) and have centripetal acceleration and velocity that is tangential to the circular path. In these two cases, the electron does not have the ability to radiate energy, because, as shown in [14], the intensity of its radiation is proportional to the scalar product of speed and acceleration. During oscillatory movements in circular orbits, this scalar product is identically equal to zero at all time instants and, therefore, the electron does not emit. It must be said that the proof of this property of circular (two-dimensional) electron motion made the well-known N. Bohr postulate forbidding an electron to radiate motion energy and fall onto the nucleus in the Bohr atom model. It is now clear that even without this postulate, electrons moving in circular orbits around their attracting center do not radiate their energy.

In the case of one-dimensional oscillations, when the electron motion at the ECC is a linear harmonic oscillator, the situation is fundamentally different. The scalar product of acceleration and electron velocity is not equal to zero at all points of the linear trajectory (with the possible exception of the return points). Therefore, which is fundamentally important for our invention, the electrons at the ECC are able and, according to electrodynamics, “obligated” to radiate their kinetic energy in the form of electromagnetic waves and waves. Such radiation occurs in the form of energy quanta that are multiples of the energy associated with the phonon ECC. A unique combination of characteristic physical properties allows linear charged oscillators, such as charged ECCs, to radiate into the external environment the energy obtained by recombining electrons at these centers. Important here is the ability of the ECC to transfer energy from the atomic nucleus to electrons (and vice versa), to convert it, for example, from the vibrational energy of an atomic nucleus with a frequency ϖ to the vibrational energy of electrons with a frequency p, forming a wide range of frequencies ϖ corresponding to the microwave range.

The notion of quantum particle trajectories (electron trajectories) is consistent and justified. In the most common wave quantum mechanics now, taking into account the Heisenberg uncertainty relation, it is believed that quantum particles have no trajectories. However, the Heisenberg uncertainty relation determines the applicability limit of wave quantum mechanics and cannot be the reason for the absence of the trajectory of the microparticle. Moreover, for example, in self-oscillating quantum mechanics, the trajectories of microparticles are accurately described [15], as in other mechanics of microparticles, and in the classical theory of atoms [16] the quantization of electron states is expressed by the ratio of the semiaxes of elliptical trajectories along which the electrons move.

The quantum theory of electron-vibrational transitions to the energy levels of the ECC or from the energy levels of the ECC also describes a wide spectrum of oscillations consisting of discrete frequencies that differ from each other and from the frequency of the phononless transition to the phonon frequency or a multiple of the phonon frequency [17]. The spectrum is described by a complex function containing a delta function of the number of phonons involved in the transition, and is a system of discrete lines that are separated from each other and from the phonon-free transition to the phonon energy. The envelope function of the line spectrum reaches its maximum when S phonons participate in the transitions. The value of S is equal to the average number of phonons participating in the electronic-vibrational transition and is called the electron-phonon coupling constant. According to theoretical estimates, S can reach 150; experimental data on the values of S = 22 are known. In silicon (Si) at A-centers, which are associations of impurity oxygen atoms with vacancies, S reaches a value of 5, and with an increase in the concentration of centers over 10 ¹⁶ cm ^{-3, the} value of S decreases to 1 due to the elastic interaction of the centers with each other. In other semiconductors on analogous to the ECC A-center, the value of S does not exceed 3 ... 4.

If electron-vibrational transitions involve more than 3% of phonons of other frequencies (except frequency p), then the discrete lines of the spectrum broaden, merge with each other and form a wide continuous spectrum of vibrational frequencies of the ECC from 1 GHz to hundreds of GHz. These are the same frequencies that are calculated from the equation of forced oscillations of a harmonic oscillator. Almost any frequency from this spectrum can be selected to generate electromagnetic microwave oscillations and waves in the claimed invention.

The possibility of generating microwave oscillations due to ECC vibrations in semiconductor materials between the electrodes has been practically tested. Semiconductor materials with electrodes and introduced ESCs were placed in the microwave measuring line at a frequency of 10 GHz instead of the microwave signal source and the signal level was recorded at the line detector. Studies were conducted of the dependence of the intensity (power) of the ECC oscillations on the distance between the electrodes D. The results of such studies are presented graphically in Fig.7 for various materials. From Fig.7 it can be seen that ECC vibrations exist and microwave oscillations are generated at distances between electrodes from a value of less than 1 μm to D _max = 400 μm. However, the maximum intensity of the oscillations is achieved at D = (50 ... 200) microns. The minimum distance between the electrodes D _min can be estimated as the wavelength of acoustic phonons actively interacting with ECC, which in many materials is close to 0.2 μm. Thus, it is advisable to choose the distance between the electrodes in the range from 0.2 to 400 microns, which is reflected in claim 1 of the claims.

It was found that the concentration of electrically active ECC in the material between the electrodes, which provides the generation of microwave oscillations, lies in the range from 2 · 10 ¹⁰ cm ^-3 to 2 · 10 ¹⁷ cm ^-3 . These results are consistent with other data on the effect of ECC on the optical and electrophysical properties of semiconductor materials and structures. The experiments were carried out both on semi-insulating materials and on industrial semiconductors with a doping level of up to 10 ¹⁶ cm ^-3 .

Let us evaluate the efficiency when converting the power of direct electric current in the material between the electrodes into the power of microwave oscillations. For definiteness, we turn to figure 4. We assume that the current I flowing in the material is sufficiently large and the operating point is located on the I – V characteristic corresponding to the field strength of the electric breakdown of the material E _max on curve 15. The same current value corresponds to the position of the operating point on curve 13 at an electric field E _min . The power supplied to the material is obviously equal to P = E _max · D · I. The power of microwave oscillations can obviously reach a value of P * = (E _max -E _min ) · D · I. The efficiency when generating microwave oscillations η = P * / P = (E _max -E _min ) / E _max . Considering further that E _max can reach a value of 4 · 10 ⁵ V / cm, and the value of E _min can be close to 2 · 10 ⁴ V / cm, it turns out that η = 0.95. Considering, however, that microwave power should be removed from the material and this process depends on the conditions for matching the material with the microwave path, it is possible that the real value of η will be half as much. In this case, the microwave power extracted from the material can be P _microwave ≈P * / 2. At D = 100 μm, at E _max = 4 · 10 ⁵ V / cm and at a supply current of I = 1 mA, we obtain P _microwave ≈2 W. This is when the width of the current channel in the material, which was equal to 1 mm in our experiments. Therefore, by increasing the width of the current channel and the current in the material with sufficient cooling of the material, the microwave output power can be increased by an order of magnitude, i.e., up to 20 W, which satisfies the technical needs for such methods of generating microwave oscillations and waves.

It should be noted that this estimate of η was performed in the current generator mode, when a constant current value I is maintained in the material. In practice, of course, the power supply mode of the material is intermediate between the current generator mode and the voltage generator mode. In this case, in the field of weak fields on the I – V characteristic 13 (see FIG. 4), the current can be 2-3 orders of magnitude higher than the accepted value (1 mA). Therefore, the above estimate of the microwave output power and efficiency of the proposed generation method can be significantly higher, which makes the claimed method of generating microwave oscillations and waves attractive for practical use.

It should also be noted that the I – V characteristics of the materials between the electrodes do not contain sections with negative differential conductivity, which is a common feature of the claimed invention and prototype. However, the microwave frequencies generated using the prototype are determined by the time of flight of electrons in the material between the electrodes. In the claimed invention, in contrast to the prototype, the frequencies of generated microwave oscillations and waves are determined by the frequencies of the crystalline phonons of the material and the natural frequencies of the atomic nuclei, which are independent of temperature until the material melts, which provides a lower level of internal noise compared to the prototype.

Figure 6 shows the current-voltage characteristic of the material (GaAs) between the electrodes (D = 100 μm), measured at room temperature. Curves 16 and 17 were measured in the dark, curves 18 and 19 were measured when the fundamental (intrinsic) optical absorption band of the material was illuminated in the spectral region. Curves 17 and 19 are measured in a magnetic field transverse to the current in the material with induction B = 0.2 T. The oblique dashed line corresponds to Ohm's law. From Fig.6 it can be seen that in the dark the I – V characteristics are linear, obey Ohm's law up to a critical value of intensity E≈10 ³ V / cm. When illuminating the material, the I – V characteristics are superlinear in electric fields E> 10 V / cm. Thus, it can be seen that illumination of the material causes a decrease in the critical electric field strength, above which Ohm's law is violated and the electron-vibrational processes at the ECC become significant. Indeed, in the absence of ECC in materials, such dependences of the I – V characteristic on illumination, electric and magnetic fields are not observed. From Fig.6 it is also seen that the influence of the magnetic field on the I – V characteristic of the material is greatest in the field of strong fields, with an electric field strength above the critical E _{crit of} ≥10 ³ V / cm, even with a slight excess of this critical field. At even greater electric field intensities, the influence of the magnetic field on the I – V characteristic is more significant.

Thus, the process of generating microwave oscillations is possible in fields from the critical E _crit ≈10 ³ V / cm to the electric breakdown field of the material, which is typical for all the materials studied. Near the critical field strength at E≈ (10 ³ ... 10 ⁴ ) V / cm, the pre-generation mode is realized when there is still no generation, but a slight increase in the field strength E creates a condition for generation and then microwave generation occurs.

The electron-vibrational center can be represented as combined acoustic and optical oscillators with frequencies of acoustic (p _ak ) and optical (p _opt ) phonons, which are connected to each other through their own (I-) oscillator with a frequency of vibration of the nucleus in the atom of the substance (ω). If the indicated frequencies are chosen such that their sum p _opt ± p _ak coincides with ω or is a multiple of ω, then (in the pre-generation mode) it is possible to perform parametric amplification with the frequency of the optical or acoustic phonon due to the energy of I-oscillations. In this case, one of the oscillators, for example, with a frequency p _AK , is tuned to the frequency of the input signal supplied to the additional electrode (additional electrodes), and the other with a frequency p _opt performs the role of an “empty” oscillator and can have any of the frequency combinations allowed for the ECC . Corresponding frequencies will always be found automatically due to the rich spectrum of elastic vibrations in the material, which is known from studies of the parametric amplification method. In this case, as was shown by L. Mandelstam and N. Papaleksi (1933), as well as by subsequent researchers, there is no dependence of the gain on the phase of the input signal, since the oscillation phase of the “idle” oscillator automatically adjusts to the optimal gain mode in a wide frequency range, which is a great advantage of parametric amplification in comparison with the single-oscillator method, in which the amplitude of the amplified signal depends on the phase difference of the amplified signal and the so-called achki "(with I-frequency ω).

The use of ECC also allows for regenerative and super-regenerative amplification modes. For this, the material between the electrodes is brought into the pre-regenerative mode by direct current and the level (amplitude) of the “pump” signal at the I-frequency (ω) is set, sufficient for a particular amplification mode. With a high level of "pumping" in the device that implements this method of amplification, generation occurs and it performs the function of a generator. Microwave signals can be generated in both soft and hard self-excitation modes, depending on the intensity of the I-oscillations of the ECC.

, где ε - относительная диэлектрическая проницаемость полупроводника, ε₀ - электрическая постоянная, е - заряд электрона, ϕ_k - контактный потенциал, n - концентрация свободных носителей зарядов в состоянии "плоских зон", обеспечивает однородность электрического поля в материале между электродами. Кроме того, при использовании выпрямляющих контактов материал между электродами отделен от остальной части материала физическим p-n-переходом, который препятствует проникновению основных носителей зарядов в материал между электродами и их влиянию на электронно-колебательные переходы и генерацию СВЧ-колебаний, способствуя снижению уровня внутренних шумов при использовании заявленного способа. In claim 1 of the claims , the most important of the above described features of the claimed method for generating microwave oscillations and waves are taken into account. In addition, the use of rectifying contacts separated by a gap D <L, the value of which is chosen less than the depth of penetration of the electric field (caused by the contact potential difference) from the contact into the material

where ε is the relative dielectric constant of the semiconductor, ε ₀ is the electric constant, e is the electron charge, ϕ _k is the contact potential, n is the concentration of free charge carriers in the state of "flat zones", it ensures the uniformity of the electric field in the material between the electrodes. In addition, when using rectifying contacts, the material between the electrodes is separated from the rest of the material by a physical pn junction, which prevents the main charge carriers from penetrating into the material between the electrodes and their effect on electron-vibrational transitions and the generation of microwave oscillations, helping to reduce the level of internal noise during using the claimed method.

It is useful to pay attention to the fact that the generation of microwave oscillations and waves in the invention is carried out by means of ECC quanta equal to the quanta of acoustic phonons, i.e. due to the energy of acoustic phonons, by reducing the number (density) of phonons, which helps to lower the temperature of the material between the electrodes and stabilize the working temperature of the material. In addition, heating the material to reasonable temperatures, at which the properties of the material, ECC and contacts to the material are not violated, does not limit the application of the claimed method, but helps to increase the microwave generation power. Heating of the material does not affect both the band of generated frequencies and the level of internal noise, since the electron oscillations are one-dimensional and the specific noise cannot exceed the level kT * / 2, where T * is the Debye temperature of the bandwidth of the generated microwave frequencies, determined by the damping coefficient ECC (r), which is significantly lower than the noise level of a two-dimensional electron gas in semiconductor layered heterostructures currently used (in HEMT transistors).

To claim 2 of the claims . The claimed method can be carried out in cases where the ECC is introduced only in the part of the material between the electrodes, for example, in the part of the material adjacent to the electrodes, since the interaction between the ECC located in these parts is carried out by exchanging phonons at distances equal to the mean free path phonon. This distance can be many times greater than the wavelength representing the phonon, and be comparable with the distance between the electrodes D. This feature is proposed to be used in claim 2 of the claims.

To claim 3 of the claims . Studies of ECC in semiconductors have shown that acoustic (and optical) vibrations, phonons also have a synchronizing effect on the vibrations of the centers and contribute to the amplification of microwave generation. The most effective role is played by acoustic and optical phonons under conditions of acoustoelectric synchronism, i.e. when the phonons arising in the material between the electrodes (for example, at one of its surfaces) pass (with the speed of sound) to the opposite surface bounding the material (to the material boundary), are reflected from it and return to the material between the electrodes with a phase satisfying the acoustoelectric condition synchronism. In this case, microwave oscillations will be amplified. The condition of acoustoelectric synchronism is satisfied if the returning phonons have the previous phase, i.e. when the plate thickness is equal to or a multiple of W, the path traveled by sound (phonon) is equal to or a multiple of 2W, and the time taken by a phonon to overcome this path is equal to or a multiple of 2W / V _sound , where V _sound is the speed of sound along the direction W. If this time is equated to the period of high frequency oscillations 1 / f _synchronism = 2π / π, we obtain the condition of synchronism, in which the distance of the material between the electrodes to the surface of the material is equal to or a multiple of W = πV _ulcers / 4π, where V _ulcers - speed of sound along directions (directions) W and ϖ - cyclic frequency of microwave generation.

Similar conditions of synchronism can be fulfilled in other directions, in directions to other surfaces of the material, which are W or distances multiple from W between the electrodes between the electrodes, which also contributes to an increase in the generated microwave power.

An additional increase in microwave power and a decrease in internal noise can be achieved by placing the electrodes in a certain crystallographic direction in the semiconductor material between the electrodes. Indeed, in this case, the shortest path (length D) from one electrode to another electrode lies along this specific crystallographic direction, in which the electric field and the current in the material between the electrodes are directed. If the frequency of the generated microwave oscillations and waves coincides with the frequency of the acoustic phonon (p *) propagating in the material along a given direction, or is a multiple of the frequency of such a phonon, then these phonons will mainly participate in the microwave vibrations of the ECC, and the participation of phonons with other directions propagation (and generally speaking with other frequencies) will be attenuated. Thus, the spectrum of phonons participating in microwave generation at the ECC is narrowed and the level of intrinsic noise decreases accordingly. In addition, the modes of microwave oscillations with frequencies other than p * turn out to be weakened, and the electric power expended on them between the electrodes will be converted into microwave oscillations at the generation frequency p *. In other words, the choice of the crystallographic direction in which an electric field acts in the material between the electrodes is important. The arrangement of the electrodes is chosen so that the crystallographic direction in the material along the shortest path (D) between them coincides with the directions of the phonon wave vectors whose frequencies are equal to the frequency of microwave generation, or an integer number of their frequencies is the frequency of microwave generation. This reduces internal noise and increases the power of microwave oscillations.

To claim 4 of the claims . A magnetic field directed along streamlines in the material between electrodes with induction from 0 to B = 4mϖ ² / e in accordance with relation (10) will suppress ECC vibrations with cyclic frequencies from 0 to ϖ and with oscillator displacements normal to streamlines. This contributes to an increase in the generated microwave power and a decrease in internal noise, since the suppression of oscillations tangential to the current lines adds their power to the power of longitudinal vibrations, reduces or even eliminates charge carrier fluctuations along the normal to the current, and reduces the corresponding noise signals. Choosing a suitable value of the longitudinal magnetic field within the specified limits, you can increase the output microwave power and reduce noise.

To claim 5 of the claims . According to expression (10), magnetic fields directed normal to the streamlines in the material with induction B = 4ϖ ² m / e suppress (prohibit, make impossible) ECC vibrations with cyclic frequencies from 0 to ϖ. According to claim 5, formulas create a transverse magnetic field in the material between the electrodes 7 with an induction value from 0 to 4ϖ ² m / e, where ϖ is the frequency of the generated microwave oscillations. Thereby, they weaken or eliminate ECC vibrations with frequencies less than ϖ, along with them eliminate the corresponding low-frequency noise. The power of the suppressed oscillations is added to the power of the generated oscillations, the possible range of generated frequencies narrows from [0, (S + 2) · p] to [p *> 0, (S + 2) · p], where S is the electron-phonon coupling constant on ECC and p is the cyclic frequency of phonons interacting with ECC. The noted feature of the generation of microwave oscillations transverse to the current in the material in a magnetic field is proposed to be used to increase microwave power and reduce noise during the generation of microwave oscillations.

To claim 6 of the claims . Placing additional field electrodes, for example, forming a rectifying contact with the material between the electrodes, and applying voltages to these electrodes relative to the material or between these electrodes, due to the field effect, allows changing the shape and length of the current line between the electrodes and thereby changing the microwave generation power. In the case of direct bias at the additional electrodes, injection of charge carriers into the material occurs, which is accompanied by carrier capture at the ECC, a change in the number of carriers participating in the vibrations at the ECC, and a corresponding change in the power of microwave oscillations in the material. The use of more than two additional electrodes makes it possible to carry out wider functional dependences of microwave power on voltages on additional electrodes. The limiting values of the voltages supplied to the additional electrodes are determined by the properties of the contacts and are well known [6]. In paragraph 6 of the claims, it is proposed to use these features of the claimed method for regulating the generated microwave power.

To claim 7 of the claims. Sync The ability to synchronize the frequency and phase of microwave oscillations is based on the property of forced oscillations of a harmonic oscillator to accept the frequency and phase of the external driving force according to expression (3). For synchronization, an alternating synchronization voltage is applied with an amplitude of less than ϕ / e, where ϕ is the height of the potential barrier in contact with the desired frequency and phase of the microwave generation or at the moments of the desired establishment of the zero phase of the microwave generation, pulses are applied to an additional electrode (additional electrodes) voltage with a duration of less than 2 π / ϖ, where ϖ is the cyclic frequency of the microwave generation. The frequency of synchronizing voltage pulses can be greater than the period of microwave oscillations 2 π / ϖ by about Q times, where Q is the quality factor of the microwave resonance system associated with the material between the electrodes.

To claim 8 of the claims . The synchronization voltage applied to the additional field electrode, depending on the polarity and magnitude, creates either a contact region depleted in charge carriers or injects charge carriers into the contact region. As a result, carrier recombination rates at the ECC change. Depending on the frequency and phase of the synchronization voltage, the power, frequency and phase of the microwave oscillations of the ECC change. This technical ability to control the frequency and phase of the generated oscillations is proposed for use in claim 8 of the claims.

To claim 9 of the claims . Illumination of the material containing the ECC in the spectral absorption range of the ECC or the material or in the spectral range of both the ECC and the material changes the rate of recombination of the charge carriers on the ECC and thereby affects the generated power of microwave oscillations and waves. The effect of radiation on microwave oscillations ceases when the electronic states on the ECC are filled with electrons. This state is achieved if the material between the electrodes becomes degenerate, i.e. if the concentration of charge carriers generated by light (Iξτ), where I is the intensity of optical radiation, ξ is the optical absorption coefficient of the material in the specified spectral range, τ is the carrier lifetime, will be compared with the effective number of states in the allowed energy zone of the material

- эффективная масса носителя заряда для плотности состояний, h=2πħ - постоянная Планка [6-8]. Это свойство генерации колебаний и волн в условиях освещения материала между электродами в п.9 формулы изобретения предложено использовать для осуществления способа оптического регулирования генерируемой СВЧ-мощности. Данный способ позволяет совмещать генерацию СВЧ-колебаний и волн с быстродействующей регистрацией (детектированием) оптического излучения. В частности, этот способ позволяет создавать компактные устройства, одновременно обеспечивающие регистрацию оптических сигналов и СВЧ-ответы на оптические запросы.where k is the Boltzmann constant, T is the absolute temperature of the material,

is the effective mass of the charge carrier for the density of states, h = 2πħ is the Planck constant [6-8]. It is proposed to use this property of oscillation and wave generation under conditions of illumination of the material between the electrodes in claim 9 for implementing the method of optical regulation of the generated microwave power. This method allows you to combine the generation of microwave oscillations and waves with high-speed registration (detection) of optical radiation. In particular, this method allows you to create compact devices that simultaneously provide registration of optical signals and microwave responses to optical queries.

To claim 10 of the claims . In the pre-generation mode, when the electric field strength in the material between the electrodes belongs to the approximate region (10 ³ ... 10 ⁴ ) V / cm, but there are no microwave oscillations and waves, an additional electric field or illumination of the material between the electrodes can cause microwave generation vibrations and waves. In paragraph 10 of the formula, this feature is proposed to be used to detect or amplify microwave signals. To do this, the signal (s) to be detected or amplified (electric, microwave) is supplied to the additional (additional) electrodes or the microwave signal, optical radiation is sent directly to the material between the electrodes. The electric fields of the signal and the electric field existing in the material are summed up and microwave oscillations arise in the material, the power and phase of which depend on the power and phase of the detected (amplified) signal (s). The illumination of the material between the electrodes has the same effect.

LIST OF DRAWINGS FIGURES

Figure 1 presents the dispersion curves of acoustic vibrations (phonons). The solid curve 1 in figa qualitatively represents a branch of acoustic vibrations of an ideal (defect-free crystal). Dotted curve 2 represents the branch of acoustic vibrations in a crystal containing electron-vibrational centers, π / a is the boundary of the Brillouin zone, and a is the crystal lattice constant. On figb curve 3 qualitatively presents the dependence of the density of acoustic vibrations G (p) on their frequency (p) near the center of the Brillouin zone (q≈0) in the material containing ECC.

Figure 2 shows an exemplary schematic arrangement of the electrodes 4 and 5 on the surface of the material with a gap between the electrodes of D.

Figure 3a shows the I – V characteristic of a GaAs material between electrodes with a gap of D = 100 μm. CVC 6 measured without illumination of the material (in the dark), CVC 7 and 8 measured at different intensities of illumination of the material. Figure 3b shows the current-voltage characteristic of the same material (GaAs) between electrodes with D = 25 μm. The I – V characteristic 9 was measured at T = 78 K in the dark, the I – V characteristic 10 was measured at T = 78 K under illumination of the material. CVC 11 was measured at room temperature in the dark; CVC 12 was measured at room temperature under illumination of the material.

Figure 4 shows the CVC (GaAs) of the material between the electrodes at D = 100 μm. I – V characteristics 13 are measured without a magnetic field, I – V characteristics 14 and 15 are measured at various magnetic fields directed normal to the current in the material. The dashed lines correspond to Ohm's law.

Figure 5 shows the dependence of the derivative dE / dB, where E is the average electric field strength in the material and B is the induction of the transverse to the current magnetic field, measured at room temperature in (Si) silicon material.

Figure 6 shows the CVC (GaAs) of the material between the electrodes (D = 100 μm) in the region of electric field strengths adjacent to the critical intensity E> 10 ³ V / cm. IVC 16 is measured in the dark and without a magnetic field. CVC 17 is measured in the dark and in a transverse magnetic field with induction B = 0.2 T. Curve 18 is measured by illuminating a material without a magnetic field. Curve 19 was measured when the material was illuminated in a transverse magnetic field with B = 0.2 T. The dashed line corresponds to Ohm's law.

7 graphically presents data on the relative power of microwave oscillations (P *) in various materials depending on the size of the gap between the electrodes (D): Gallium arsenide (GaAs) - 20, Indium phosphide doped with Iron and Tellurium (InP: Fe : Te) - 21, Silicon (Si) - 22, compound (InGaAsP) - 23, quaternary compound on a semi-insulating substrate from India Phosphide (InGaAsP / InP) - 24.

INFORMATION SOURCES

1. Born M, Oppenheimer. Review of the Interpretation of Luminescence phenomena. Ann. D. Phys. 1927. V.84, No. 4. P.457.

2. Dirac P.A.M. Note on the excharge phenomena in the Thomas atom. Proc. Cambridge Phil. Soc. 1930. V. 26. P.376

3. Pastore G., Smargiassi E., Buda F. Theory ofab inito molecular-dynamics calculations. Phys. Rev. A. 1991. V.44. No. 10. P.6334-6347.

4. Doltsinis N.L., Marx D. First principles molecular dynamics involving exited states and nonadiabatic transitions. Journ. Theor. Comput. Chem., 2002, vol. 1, P.319-349.

5. A.S. USSR No. 1228671, 1986 A.S. USSR No. 1823704, 1992

6. Zee. C. Physics of semiconductor devices. M .: "World". 1984. S. 150-225.

7. Anselm A.I. Introduction to the theory of semiconductors. M .: Science, 1978. S.557-564.

8. Seeger K. Physics of semiconductors. - M .: Mir, 1977. P.113.

9. Vdovenkov V.A. // Izv. Universities. Electronic materials technicians. 2003. No1. S.57-62.

10. Vdovenkov V.A. // arXiv: cond-mat \ 9904299; arXiv: cond-mat \ 0207215.

11. Vdovenkov V.A. // arXiv: cond-mat \ 0207218. - Same: High technology. 2002. No4. S.55-60. - The same: Microsystem technology. 2002. No. 12. S.17-22.

12. Stoker J. Nonlinear oscillations in mechanical and electrical systems. - M: Foreign Literature, 1953. S.15-22, S.183-210.

13. Landau L.D., Lifshitz M.E. Electrodynamics. M .: - Science, 1986.

14. Klyushin Ya.G. Fundamentals of modern electrodynamics. St. Petersburg, 1999.

15. Rodimov B.N. Self-oscillating quantum mechanics. Tomsk State University Publishing House, Tomsk, 1967 edition, 1976 edition

16. Sukhorukov G.I., Sukhorukov V.I., Sukhorukov E.G., Sukhorukov R.G. The real physical world without paradoxes. Publishing House of Bratsk State University, Bratsk, 2001

17. Pekar S.I. Research on the electronic theory of crystals. Gostekhizdat, 1951. The same: On the theory of luminescence and light absorption by impurities in dielectrics. ZHETF, v.22, vyp.6, p.641-657, 1952. The same: On the influence of lattice deformation by electrons on the optical and electrical properties of crystals. Physics-Uspekhi, vol. L, issue 2, p .97-252, 1953

18. Huang K. and Rhys A. Theory of light absorption and nonradiative transitions in F-centers. Roy. Soc., V. A204, p. 406-423, 1950

Claims (10)

1. A method of generating electromagnetic microwave (microwave) oscillations, characterized in that they use a semiconductor material, for example, in the form of an industrial plate, on the surface or in the bulk of the material, electrodes are placed that form rectifying contacts to the semiconductor, for example, metal-semiconductor contacts, Schottky contacts, distance D between the electrodes is selected in the range of D _min = 0.2 m to D _max = 400 microns, before, after or during vibronic center (ECC) is introduced into the deposition electrode material between electrodes ontsentratsii from 2 × 10 ¹² cm ^-3 to 2 × 10 ¹⁷ cm ^-3, establish electromagnetic coupling comprising EKC material between the electrodes with the microwave resonance system, for example with an oscillatory circuit, the resonator waveguide line having a resonant frequency in the range from 1 GHz to the frequency of the (S + 2) -frequency of the acoustic phonon participating in the electron-vibrational transitions in the material, where S is the coupling constant of electrons with phonons, an electric voltage is applied between the electrodes and a current and electric field are generated in the material with an average intensity between 10 ³ V / cm and field strength of electrical breakdown of the material. 2. The method of generating electromagnetic microwave oscillations according to claim 1, characterized in that the ECC is introduced only in the depletion region or in the depletion region of the material between the electrodes, for example, in the parts of the material adjacent to the electrodes. 3. The method of generating electromagnetic microwave oscillations according to claim 2, characterized in that the distance (distances) (W) is selected from the material between the electrodes to the surface (surfaces) bounding (restricting) the material (s) satisfying the acoustoelectric synchronism condition (s), then is equal or multiple (equal or multiple) W = ϖV _sv / 4π, where V _sv is the speed of sound along the direction (s) of W; ϖ is the cyclic frequency of the generated microwave oscillations. 4. The method of generating electromagnetic microwave oscillations according to claim 2, characterized in that a magnetic field is generated in the material between the electrodes with an induction from 0 to 2 T, directed along streamlines in the material between the electrodes. 5. The method of generating electromagnetic microwave oscillations according to claim 2, characterized in that a magnetic field is generated in the material directed normal to the current lines in the material between the electrodes with induction from 0 to 4ϖ ² m / e, where ϖ is the cyclic frequency of microwave generation , m is the effective mass of the charge carrier in the material, e is the electron charge. 6. The method of generating electromagnetic microwave oscillations according to claim 2, characterized in that an additional field electrode or several additional field electrodes are placed, for example, forming rectifying contacts to the material between the electrodes, reverse bias voltages are applied between the material and the additional electrodes or between the additional electrodes or direct polarity. 7. The method of generating electromagnetic microwave oscillations according to claim 6, characterized in that between the two or more electrodes or between one or more electrodes and the material, an alternating synchronization voltage is applied with a frequency and a predetermined phase of the microwave generation or at specified moments of establishing the zero phase of the microwave generation apply short voltage pulses with a duration of less than 2π / ϖ, where ϖ is the cyclic frequency of the microwave generation. 8. The method of generating electromagnetic microwave oscillations according to claim 7, characterized in that the frequency or phase of the synchronization voltage is changed. 9. The method of generating electromagnetic microwave oscillations according to any one of claims 1 to 8, characterized in that the material between the electrodes is illuminated in the spectral range of the optical absorption of the ESC or material or in the spectral range of the optical absorption and the ESC and the material and the illumination intensity is varied from I = 0 to I = N _c / (ξτ), where N _c is the effective number of electronic states in the conduction band, ξ is the optical absorption coefficient, and τ is the electron lifetime in the material between the electrodes. 10. The method of generating electromagnetic microwave oscillations according to claim 9, characterized in that a current and an electric field strength are generated in the material between the electrodes corresponding to the pre-generation mode, the beginning of the superlinear portion of the current-voltage characteristic of the material, located in the field of electric fields from about 10 ³ V / cm up to 10 ⁴ V / cm, subject (s), to detection or amplification, the signal (s) are supplied to additional (additional) electrodes or sent directly to the material between the electrodes.

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