RU2501155C1 - METHOD FOR POWER AMPLIFICATION ON GaN MICROWAVE TRANSISTORS AND PULSED MICROWAVE POWER AMPLIFIER - Google Patents

Abstract

FIELD: radio engineering, communication.

SUBSTANCE: pulsed microwave power amplifier on GaN microwave transistors includes input and output summation microstrip bridges, in the branches of which there are GaN microwave transistors whose gates are connected to a voltage stabiliser and the drains are connected to a high-speed pulse modulator, having a power commutator switch on a GaN power transistor with a high-speed driver which connects the drain of the GaN microwave transistors to a storage capacitor, a power discharge switch on a power GaN transistor with a high-speed driver, which facilitates discharge of the capacitances of the GaN microwave transistors after disconnecting the commutator switch and the pulse-width modulation power supply, a discharge switch on a power GaN transistor with a high-speed driver, which enables to disconnect the storage capacitor and the drain of the GaN microwave transistor from the pulse-width modulation power supply with output voltage of 5-45 V and connect the storage capacitor to the pulse-width modulation power supply when disconnecting the supply voltage from the drains of the GaN microwave transistors using the commutator switch.

EFFECT: low phase noise in the output microwave signal.

4 cl, 5 dwg

Description

The group of inventions relates to microwave technology and can be used in radar and radio navigation equipment, as well as in means of transmitting information.

The prior art pulse microwave power amplifier, which contains isolation valves, a modulator, a first microwave signal amplification stage, made, for example, on a traveling wave lamp (TWT), a second microwave signal amplification stage, made on an amplitron, a pulse transformer, with anodes The TWT and the amplitron, as well as one of the terminals of the secondary winding of the pulse transformer are connected to a common bus, the cathode of the amplitron is connected to the other terminal of the secondary winding of the pulse transformer, and the cathode of the TWT is connected to the cathode of the amp Throne through the terminating resistor. In parallel with the secondary winding of the pulse transformer, a peak detector is turned on, consisting of a capacitor, a diode, and a resistor connected in parallel with the diode, while one of the capacitor plates is connected to the cathode of the amplitron, the other capacitor plate is connected to the cathode of the diode, the anode of which is connected to the common bus, and in parallel another capacitor is connected to the resistor. In parallel with the diode and peak detector resistor, a high-voltage switch is connected, while the switch collector is connected to the diode cathode, and the key control electrode is connected to the diode cathode through a driver and one of the inputs of the pulse-width modulated (PWM) control circuit, and the other input of the control circuit PWM is connected to an external source of triggering pulses (RF patent No. 2263391, publ. 10/27/2005).

A disadvantage of the known device is its low reliability, insufficient output power of microwave transistors and solid-state modules of microwave transmitters, as well as a high level of phase noise.

Also known from the prior art is an amplifier that contains isolation valves, a modulator, a first microwave signal amplification stage, made, for example, on a traveling wave lamp (TWT), a second microwave signal amplification stage, made, for example, on an amplitron, and also a matching resistor, field effect transistor, feedback resistor and control voltage source (see RF patent No. 2340083, publ. 27.11.2008).

The disadvantages of the known device are also low reliability, insufficient output power of microwave transistors and solid-state modules of microwave transmitters.

In addition, the prior art method of using a pulsed microwave power amplifier (see RF patent No. 2263391, publ. 10/27/2005), in which the microwave power is supplied to the input of the decoupling valve. After amplification in the first stage of amplification of the microwave signal, the microwave power through the valve is fed to the input of the second stage of amplification of the microwave signal. From the microwave output of the second stage, the microwave power is supplied to the antenna. Pulse modulation of cascades and amplification of the microwave signal is carried out in the same way as in the prototype device from one pulse modulator. Coordination of the modulator with cascades is realized using a pulse step-up transformer. The pulse voltage to the second stage of amplification of the microwave signal is supplied directly from the secondary winding of the transformer, and to the first stage from the same secondary winding through a matching resistor.

To reduce phase distortion at the leading edge of the modulating pulse of the first stage, a capacitor is connected in parallel with the matching resistor.

Coordination of the modulator with the cascades and amplification of the microwave signal using a pulse transformer entails oscillations and a voltage drop at the top of the modulating pulse, due to the inductance of the scattering and the final magnitude of the magnetization inductance of the transformer, shunting the load, which are the electronic tubes of the first and second stages of amplification of the microwave signal.

In the pause between pulses, the capacitor is discharged through the key and the secondary winding of the transformer. A control circuit with a PWM synchronized by a start pulse, in the pause between start pulses, gives a key control delay delayed relative to the start pulse, the duration of which changes so that the voltage level of the peak detector remains unchanged for any pulse duty cycle conditions. The control pulse varying in duration is amplified by the driver power and then fed to the control electrode of the key, which opens. In this case, the capacitor is partially discharged through the key and the primary winding of the transformer.

The disadvantages of this method are its insufficient level of output power of microwave transistors and a high level of phase noise.

The objective of this group of inventions is to eliminate the above disadvantages.

The general technical result consists in reducing the phase noise level of the output microwave signal and increasing the reliability of the device due to the protection of the GaN gate of the microwave transistor against breakdown during overload by the input microwave signal.

The technical result is ensured by the fact that a pulsed microwave power amplifier based on GaN microwave transistors includes input and output summing microstrip bridges, in the shoulders of which GaN microwave transistors are installed, the gates of which are connected to a voltage regulator, and the drains are connected to a high-speed pulse modulator containing a powerful switching key on a power GaN transistor with a high-speed driver connecting the drain of GaN microwave transistors to the storage capacitance, a powerful discharge key on a power GaN transistor with a growth driver that discharges the capacitances of GaN microwave transistors after disconnecting a switching key and a pulse-width modulated power supply, a charging key on a power GaN transistor with a high-speed driver, which disconnects the storage capacitance and drain of a GaN microwave transistor from a pulse-width pulse power supply modulation with an output voltage of 5-45 V and the connection of the storage capacitance to a pulse-width modulated power source during the disconnection of the supply voltage from the GaN drains; microwave transistor switching key.

In accordance with particular cases, the device may have the following design features.

The gates of the GaN microwave transistors are connected to the voltage regulator through microstrip filters and resistive dividers, and the drains are connected to the high-speed pulse modulator through microstrip filters.

The resistive gate power divider of each GaN microwave transistor is connected through diodes to two voltage stabilizers.

The technical result is ensured by the fact that the method of power amplification on GaN microwave transistors using a pulsed microwave power amplifier on GaN microwave transistors is characterized in that the microwave signal is increased from a high-speed pulse modulator containing a powerful switching key on a power GaN transistor with a high-speed driver connecting the drain of GaN microwave transistors to the storage capacitance. In this case, the discharge of the capacitance provides a powerful discharge key on a power GaN transistor with a high-speed driver after disconnecting the switching key and the power supply with pulse-width modulation. The charging key on a power GaN transistor with a high-speed driver ensures that the storage capacitance and drain of the GaN microwave transistor are disconnected from the pulse-width modulated power supply and the storage capacitance is connected to the pulse-width modulated power supply during disconnection of the supply voltage from the drains of the GaN microwave transistors with a switching key.

The technical essence of this group of inventions is illustrated by the following drawings:

figure 1 shows a block diagram;

figure 2 shows the electrical circuit;

figure 3 shows a graphical dependence characterizing the suppression of ripple with a PWM frequency in the power supply voltage pulse MUP from 50 mV to 10 mV;

figure 4 shows the results of measuring the influence of SPFS solid-state pulse transmitter powered by a VUM when using a three-key circuit;

5 depicts a graphical dependence of phase noise reduction.

This device has the following structural elements:

1 - input microstrip bridge;

2 - the first GaN microwave transistor;

3 - second GaN microwave transistor;

4 - output microstrip bridge;

5 - the first protective diode of the first GaN microwave transistor;

6 - resistive divider of the first GaN microwave transistor;

7 - the second protective diode of the first GaN microwave transistor;

8 - the first protective diode of the second GaN microwave transistor;

9 - resistive divider of the second GaN microwave transistor;

10 - the second protective diode of the second GaN microwave transistor;

11 - the first voltage regulator gates GaN microwave transistor;

12 - the second voltage regulator of the gates of the gates of the GaN microwave transistor;

13 - microstrip filter plug power supply gate of the first GaN microwave transistor;

14 - microstrip filter plug power supply gate of the second GaN microwave transistor;

15 is a microstrip filter plug power drain of the first GaN microwave transistor;

16 - microstrip filter plug power supply of the second drain GaN microwave transistor;

17 is a first switching key on a GaN power transistor of a drain power circuit of a GaN microwave transistor;

18 - high-speed driver of the switching key of the power supply circuit of the drains GaN microwave transistor;

19 - storage capacity of the power supply circuit of the drains of the GaN microwave transistor;

20 - bit key on a GaN power transistor of a drain power circuit of a GaN microwave transistor;

21 is a high-speed driver of the discharge key of the power supply circuit of the drains GaN microwave transistor;

22 - secondary power source (VLF) pulse-width modulation (PWM);

23 - charging key on a GaN power transistor in the drain circuit of a GaN microwave transistor;

24 - high-speed driver of the third key of the power supply circuit of the drains of the GaN microwave transistor.

Figure 1 shows a block diagram showing the input 1 and output 4 summing microstrip bridges, the first GaN microwave transistor 2, the second GaN microwave transistor 3, the first protective diode 5, the resistive divider of the first GaN microwave transistor 6, the second protective diode of the first GaN microwave transistor 7, first protective diode of the second GaN microwave transistor 8, resistive divider of the second GaN microwave transistor 9, second protective diode of the second GaN microwave transistor 10, the first gate voltage regulator of the gates of the GaN microwave transistor 11, the second stabilizer GaN microwave gate voltage anzistor 12, a microstrip filter plug of the shutter power of the first GaN microwave transistor 13, a microstrip filter plug of the shutter power of the second GaN microwave transistor 14, a microstrip filter plug of the drain power of the first GaN microwave transistor 15, a microstrip filter plug of the power supply of the second GaN drain Microwave transistor 16, the first switching key on the GaN power transistor of the GaN drainage microwave power supply transistor 17, high-speed driver of the switching key of the GaN drainage power supply circuit of the microwave transistor 18, the storage capacitance of the GaN microwave drain drain power supply circuit side 19, a discharge key on a GaN power transistor of a drain power supply circuit of a GaN microwave transistor 20, a high-speed driver of a discharge key of a drain power supply circuit of a GaN microwave transistor 21, a pulse-width modulated (PWM) secondary power supply (VIP) 22, a charge switch on a GaN power transistor in the power supply circuit of the drains of the GaN microwave transistor 23, a high-speed driver of the third key of the power supply circuit of the drains of the GaN microwave transistor 24.

This device operates as follows.

Pulse microwave power amplifier based on GaN microwave transistors with a reduced phase noise level of the output microwave signal and protection of the gate of the GaN transistor against breakdown during overload by the input microwave signal consists of input and output summing microstrip bridges 1, 4, in the arms of which are installed GaN microwave transistors 2, 3, whose gates are connected to the voltage regulator 11, 12 through microstrip filters “plugs” 13, 14 and resistive dividers 6, 9, and drains through microstrip filters “plugs” 15, 16 are connected to high-speed pulse a modulator containing a powerful switching key 17 on a power GaN transistor with a high-speed driver 18 that connects the drain of GaN microwave transistors to a storage capacitance 19. A powerful discharge key 20 on a power GaN transistor with a high-speed driver 21 provides discharge of the capacitances of GaN microwave transistors after switching off the switching the key 17 and the secondary power source 22, in which to increase the efficiency of the microwave amplifier used a secondary power source with pulse-width modulation.

In this device, to minimize heat generation and increase the efficiency for powering microwave transistors of hybrid integrated circuits, a microwave power amplifier as part of a power control modulator (MUP) uses a secondary power source (VLI) with pulse-width modulation (PWM) 22. For conversion voltage down, during the implementation of the experimental sample, a PWM converter with an output voltage of 5-45 V was applied, capable of delivering 20 A to a load. Despite the presence of discrete components in pektre PWM power converter as compared with the linear source selection was made on the first side, since the PWM converter has a significantly higher efficiency.

To reduce the phase noise level of the output microwave signal, a charging key 23 on the power GaN transistor is additionally introduced into the drain circuit of the GaN microwave transistors, controlled by a high-speed driver 24, disconnecting the storage capacitance 19 and the drain of the GaN microwave transistor from the secondary power supply 22 with PWM the operating time of the GaN microwave transistors and connecting the storage capacitance 19 to the secondary power supply 22 with pulse-width modulation during disconnection of the supply voltage from the drains of the GaN microwave transistors with a switching key 17.

To protect the GaN gate of the microwave transistor from breakdown during overload by the input microwave signal, the resistive power dividers of the gate 6, 9 of each GaN microwave transistor are connected to two voltage stabilizers 11, 12 through diodes 5, 7. The voltage value of the first stabilizer 11 is higher than the voltage the gate formed by the resistive divider, and the voltage value of the second stabilizer 12 is less than the voltage of the gate formed by the resistive divider 6, 9.

Studies of the main characteristics of the prototype confirmed the expected advantages of a new pulsed microwave power amplifier based on GaN microwave transistors with a reduced phase noise level of the output microwave signal and protection of the gate of the GaN microwave transistor against breakdown during overload by the input microwave signal with three power switches on GaN transistors in comparison with analogues. An experimental sample of a pulsed microwave power amplifier based on GaN microwave transistors with a reduced phase noise level of the output microwave signal and protection of the gate of the GaN transistor against breakdown during overload by the input microwave signal provided a working pulse current of the microwave transistors of the amplifier 25 A at a duty cycle of Q = four. The sample worked at pulse durations from 0.5 μs to 200 μs with a front and slice duration of less than 0.1 μs and a voltage ripple of less than 10 mV (0.02% Upit). In addition, the use of a three-key circuit made it possible to reduce the level of the SPSH signal of the microwave transmitter by more than 20 dB (Fig. 5).

Differences of the proposed device based on a three-key design from analogues are significant, since in the specified combination they provide the following advantages:

- lowering the phase noise level of the output microwave signal and protecting the gate of the GaN microwave transistor against breakdown during overload by the input microwave signal.

- minimizing the impact on the stability of the frequency and phase of the microwave signal noise and interference from a secondary power source,

- lowering the SPFS signal level of the microwave transmitter by more than 20 dB,

- minimizing the overall dimensions of the equipment while ensuring resistance to external destabilizing factors.

Claims (4)

1. Pulse microwave power amplifier based on GaN microwave transistors, including input and output summing microstrip bridges, in the shoulders of which are mounted GaN microwave transistors, the gates of which are connected to a voltage regulator, and the drains are connected to a high-speed pulse modulator containing a powerful switching key for power GaN transistor with a high-speed driver that connects the drain of GaN microwave transistors to the storage capacitance, a powerful discharge key on a power GaN transistor with a high-speed driver that provides a discharge capacitance of GaN microwave transistors after disconnecting a switching key and a pulse-width modulated power supply, a charging key on a power GaN transistor with a high-speed driver, which disconnects the storage capacitance and drain of a GaN microwave transistor from a pulse-width-modulated power supply with an output voltage of 5 -45 V and connecting the storage capacitance to a pulse-width modulated power supply during disconnection of the supply voltage from the drains of the GaN microwave transistors with a switching key. 2. The amplifier according to claim 1, characterized in that the gates of the GaN microwave transistors are connected to the voltage regulator through microstrip filters and resistive dividers, and the drains are connected to a high-speed pulse modulator through microstrip filters. 3. The amplifier according to claim 1, characterized in that the resistive gate power divider of each GaN microwave transistor is connected via diodes to two voltage stabilizers. 4. A method of amplifying power on a GaN microwave transistor using a pulsed microwave power amplifier on a GaN microwave transistor according to any one of claims 1 to 3, characterized in that the microwave signal is increased from a high-speed pulse modulator containing a powerful switching key on a power A GaN transistor with a high-speed driver connecting the drain of GaN microwave transistors to the storage capacitor, while the discharge of the capacitance provides a powerful discharge key on the power GaN transistor with a high-speed driver after disconnecting the switch a key and a pulse-width modulated power supply, and a charging key on a power GaN transistor with a high-speed driver ensures that the storage capacity and drain of the GaN microwave transistor are disconnected from the pulse-width modulated power supply and the storage capacity is connected to the pulse-width-power supply modulation during disconnection of the supply voltage from the drains of the GaN microwave transistors with a switching key.

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