RU2314595C2 - Method for producing microwave hybrid integrated circuit - Google Patents

Abstract

FIELD: electronic engineering.

SUBSTANCE: proposed method for producing microwave hybrid integrated circuit includes printing layout pattern of metal film conductors and at least one wiring pad on face end of insulating substrate for disposing at least one pendant-component chip; disposing, aligning, and connecting internal ends of flat beam terminals of output frame with contact pads disposed on face end of pendant-component chips; removing auxiliary parts of output frame; disposing pendant-component chips on wiring pads; and connecting external ends of flat beam terminals of output frame to layout pattern metal film conductors; auxiliary parts of output frame are removed upon connecting external ends of output-frame flat beam terminals with layout pattern film metal conductors either completely or partially; pendant-component chips are disposed on wiring pads either simultaneously or in definite sequence; external ends of output-frame flat beam terminals are connected to layout pattern metal film conductors either directly or (and/or) by means of pendant-component chips.

EFFECT: enhanced yield, improved electrical characteristics of microwave hybrid integrated circuits.

3 cl, 2 dwg

Description

The invention relates to electronic equipment.

A known method of manufacturing hybrid microwave integrated circuits, including the manufacture on the front side of the dielectric substrate of the topological pattern of metallization of film conductors and mounting pads for the location of crystals of mounted components. Arrangement of crystals of mounted components, namely crystals of semiconductor devices, ceramic capacitors, inductors, etc. on mounting sites and their connection with mounting sites [1]. The connection of the contact pads of the crystals of the mounted components with the film conductors of the topological pattern of metallization with wire conductors using thermocompression welding.

The disadvantages of this method are the low electrical characteristics:

- firstly, due to the prolonged exposure to high temperature of about 300 ° C on mounted components and especially those made of elements of group A ³ B ⁵ during thermocompression welding;

secondly, due to the high parasitic inductance of the wire conductors.

In addition, this method is characterized by a low percentage of yield due to the possibility of breakdown of the mounted components by electrostatic charges in the manufacturing process of hybrid microwave integrated circuits.

A known method of manufacturing hybrid integrated circuits in the microwave range, in which to connect using the output frame of the flat beam conclusions made on a polymer carrier, including:

- manufacture on the front side of the dielectric substrate of the topological pattern of metallization of film conductors and mounting pads for the location of crystals of mounted components;

- the location, alignment and connection of the inner ends of the flat beam findings of the lead frame with pads located on the front side of the crystals of the mounted components;

- removal of technological parts of the output frame;

- the location of the crystals of the mounted components on the installation site;

- the connection of the external ends of the flat beam conclusions of the output frame with the film conductors of the topological metallization pattern [2] - prototype.

The use of flat beam outputs for connecting the output frame allowed:

- firstly, to improve electrical characteristics through the use of flat beam terminals having less stray inductance compared to wire conductors;

- secondly, to increase the strength of the connections and thereby increase the reliability of hybrid microwave integrated circuits.

However, the connection in the hybrid microwave integrated circuit by means of flat beam terminals made on a dielectric, polymer lead-out frame does not protect the crystals of the mounted components from electrical breakdown by their electrostatic charges, which leads to a low percentage of yield of suitable hybrid microwave integrated circuits.

The technical result of the invention is to increase the percentage of yield, improve electrical characteristics while maintaining the reliability of hybrid microwave integrated circuits.

This technical result is achieved by the fact that in the known method of manufacturing a hybrid microwave integrated circuit, including the manufacture on the front side of the dielectric substrate of a topological metallization pattern of film conductors and at least one mounting pad for the location of at least one crystal of the mounted component , location, alignment and connection of the inner ends of the flat beam conclusions of the lead frame with pads located on the front side of the crista hinged components, removing the technological parts of the lead-out frame, placing crystals of the hinged components on the mounting pads, connecting the outer ends of the flat beam leads of the lead-out frame with the film conductors of the topological metallization pattern, removing the technological parts of the lead frame after connecting the outer ends of the flat beam-leads of the lead frame with the film conductors of the topological pattern of metallization, while the removal is carried out either completely or partially, p memory location crystals mounted components on mounting pads carried out either simultaneously or in sequence, a compound of the outer ends of the flat beam findings lead frame with film conductors topological metallization pattern is carried out either directly or and / or external components through the crystals.

A certain sequence in the arrangement of crystals of the mounted components on the installation sites takes place in the case of the use of mounted components that are sensitive to thermal effects above 300 ° C, for example, made of materials of group A ³ B ⁵ .

When connecting the outer ends of the flat beam conclusions of the lead-out frame with the film conductors of the topological metallization pattern, they can simultaneously use the technological parts of the output frame between the adjacent outer ends of the flat beam conclusions to connect with other film conductors of the topological metallization pattern.

The proposed different procedure for performing a set of actions and the conditions for their implementation, namely that

- removal of the technological parts of the output frame is carried out after connecting the outer ends of the flat beam conclusions of the output frame with the film conductors of the topological metallization pattern, while the removal is carried out either completely or partially,

- the location of the crystals of the mounted components on the installation site is carried out either simultaneously or in a certain sequence,

- the connection of the external ends of the flat beam conclusions of the lead-out frame with the film conductors of the topological metallization pattern is carried out either directly or and / or by means of crystals of the hinged components will allow:

- firstly, to exclude the possibility of electrical breakdown by electrostatic charges of crystals of the mounted components and thereby increase the percentage of yield of suitable hybrid microwave integrated circuits;

- secondly, in the case of the simultaneous use of the technological parts of the lead-out frame between the adjacent outer ends of the flat beam terminals for connection with other film conductors of the topological metallization pattern, to improve the electrical characteristics of the hybrid microwave integrated circuit.

The invention is illustrated in the drawing.

Figure 1 presents a variant of a hybrid microwave integrated circuit in which the technological parts of the output frame are removed completely and where:

- dielectric substrate - 1;

- topological drawing of metallization of film conductors - 2;

- mounting sites for the location of crystals of mounted components - 3;

- the inner ends of the flat beam conclusions of the output frame - 4;

- crystals of hinged components - 5;

- contact pads of crystals of mounted components - 6;

- the outer ends of the flat beam conclusions of the output frame - 7.

Figure 2 presents a variant of a hybrid microwave integrated circuit in which, when connecting the external ends of the flat beam terminals of the lead frame with the film conductors of the topological metallization pattern, the technological parts of the output frame located between adjacent external ends of the flat beam terminals are simultaneously used to connect with other film conductors of a topological metallization pattern and where:

- technological parts of the output frame - 8.

An example of a specific implementation 1.

On the front side of the dielectric substrate 1, for example, made of polycor, with a size of 48 × 60 × 0.5 (mm), a topological pattern of metallization of the film conductors 2 and an assembly pad 3 are made to arrange the crystal of the mounted component 5. For this, for example, the following structure is applied layers of metals and their thickness, respectively: chromium (100 Ohm / mm ² ) and copper (1 μm), vacuum sprayed, copper (3 μm), nickel (0.6-08 μm) and gold (3 μm), galvanically deposited .

Then, the inner ends of the flat beam outputs 4 of the output frame are positioned, aligned and connected with the contact pads 6 located on the front side of the crystal of the mounted component 5, for example, the crystal of the 3P612 transistor, for example, by thermal compression welding on the EM-4030 installation. In this case, the technological parts of the output frame 8 are made of gold 8 μm thick, galvanically deposited, and the contact pads of the 3P612 transistor have the following structure of metal layers and their thickness, respectively: titanium (100 Ω / mm ² ) and palladium (0.2 μm), vacuum -sprayed, gold (3 μm), galvanically deposited.

Next, the outer ends of the flat beam conclusions 7 of the output frame are connected to the film conductors of the topological metallization pattern 2 by spot welding by a split electrode at room temperature on the Contact-3A installation.

Next, the completely technological parts of the output frame 8 are removed, for example, mechanically with tweezers.

Example 2

A hybrid microwave integrated circuit is made, as in example 1, but if there are several crystals of hinged components 5 in the circuit, and their location on the mounting pads is carried out simultaneously, for which purpose conductive glue ECHE-S is applied to the mounting pads 3, mounted crystals are mounted components 5, for example, crystals of ceramic capacitors with a size of 0.65 × 0.65 × 0.3 mm TCO.707.002 TU and a transistor crystal 3P612, dried at a temperature of 100 ° C for 1.5 hours and connect one external ends of the flat beam terminals 7 at An output frame with film conductors of a topological metallization pattern 2 directly, and others through crystals of ceramic capacitors.

Example 3

A hybrid microwave integrated circuit is made, as in example 1, but the crystals of the mounted components 5 are arranged in a certain sequence, namely, the crystals of ceramic capacitors with a size of 0.65 × 0.65 × 0.3 (mm) TSO.707.002 TU on installation sites 3 and connect with it, soldering a gold-silicon eutectic solder at a temperature of 410 ° C. Then, the transistor crystal ZP976, made of gallium arsenide, is placed and a gold-tin solder of eutectic composition is soldered at a temperature of 290 ° C.

Next, one of the external ends of the flat beam terminals 7 of the lead frame is connected to the film conductors of the topological metallization pattern 2, and others are connected through crystals of ceramic capacitors 5.

When connecting the outer ends of the flat beam terminals of the lead frame to the film conductors of the topological metallization pattern 2, at the same time, the technological parts of the output frame 8 are used, between the adjacent outer ends of the flat beam conclusions, to connect with other film conductors of the topological metallization pattern

Then remove the remaining technological parts of the output frame 8.

Thus, the proposed method of manufacturing a hybrid integrated circuit microwave range will allow:

- firstly, to increase the yield of suitable hybrid microwave integrated circuits due to the elimination of possible breakdown of crystals of the mounted components in the manufacturing process of the hybrid microwave integrated circuit;

- secondly, to improve the electrical characteristics of hybrid microwave integrated circuits due to the use of the technological part of the output frame to further reduce the parasitic inductance of the compounds.

Information sources

1. Microelectronic equipment on package integrated circuits. I.N. Vazhenin, G.A. Blinov, L.A. Koledov et al. Ed. I.N. Vazhenina. - M.: Radio and Communications, 1985, pp. 131-133.

2. Installation of microelectronic equipment. G.Ya. Guskov, G.A. Blinov, A.A. Gazarov. - M.: Radio and Communications, 1986, pp. 109-110.

Claims (3)

1. A method of manufacturing a hybrid integrated circuit microwave range, including the manufacture on the front side of the dielectric substrate of the topological pattern of metallization of film conductors and at least one mounting pad for the location of at least one crystal of the mounted component, arrangement, combination and connection of internal the ends of the flat beam conclusions of the output frame with contact pads located on the front side of the crystals of the mounted components, the removal of technological parts in the water frame, the location of the crystals of the mounted components on the mounting sites, the connection of the outer ends of the flat beam terminals of the lead frame with the film conductors of the topological metallization pattern, characterized in that the removal of the technological parts of the lead frame is carried out after the connection of the external ends of the flat beam terminals of the lead frame with the film conductors of the topological pattern metallization, while the removal is carried out either completely or partially, the location of the crystals of the mounted components nt to the installation sites is carried out either simultaneously or in a certain sequence, the external ends of the flat beam terminals of the lead frame are connected to the film conductors of the topological metallization pattern either directly or / and / or via crystals of the mounted components. 2. A method of manufacturing a hybrid microwave integrated circuit according to claim 1, characterized in that a certain sequence in the arrangement of crystals of the mounted components on the mounting sites takes place in the case of using mounted components that are sensitive to thermal effects above 300 ° C, for example, made of materials of group A ³ B ⁵ . 3. A method of manufacturing a hybrid microwave integrated circuit according to claim 1, characterized in that when connecting the outer ends of the flat beam terminals of the lead frame with the film conductors of the topological metallization pattern, the technological parts of the output frame between adjacent outer ends of the flat beam terminals can be simultaneously used for connections with other film conductors of the topological metallization pattern.

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