RU2175788C2 - Монолитное интегральное устройство - Google Patents
Монолитное интегральное устройство Download PDFInfo
- Publication number
- RU2175788C2 RU2175788C2 RU98109576/06A RU98109576A RU2175788C2 RU 2175788 C2 RU2175788 C2 RU 2175788C2 RU 98109576/06 A RU98109576/06 A RU 98109576/06A RU 98109576 A RU98109576 A RU 98109576A RU 2175788 C2 RU2175788 C2 RU 2175788C2
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- RU
- Russia
- Prior art keywords
- aforementioned
- structures
- hydrogen
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- Prior art date
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- 239000000463 material Substances 0.000 claims abstract description 42
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 38
- 239000001257 hydrogen Substances 0.000 claims abstract description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011343 solid material Substances 0.000 claims abstract description 16
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 230000004927 fusion Effects 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000008247 solid mixture Substances 0.000 description 4
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052805 deuterium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 150000002483 hydrogen compounds Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004449 solid propellant Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229940126062 Compound A Drugs 0.000 description 1
- 241001101998 Galium Species 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- QGQFOJGMPGJJGG-UHFFFAOYSA-K [B+3].[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [B+3].[O-]N=O.[O-]N=O.[O-]N=O QGQFOJGMPGJJGG-UHFFFAOYSA-K 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 125000004431 deuterium atom Chemical group 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21B—FUSION REACTORS
- G21B3/00—Low temperature nuclear fusion reactors, e.g. alleged cold fusion reactors
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21B—FUSION REACTORS
- G21B3/00—Low temperature nuclear fusion reactors, e.g. alleged cold fusion reactors
- G21B3/002—Fusion by absorption in a matrix
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Primary Cells (AREA)
- Bipolar Transistors (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ITMI95A002502 | 1995-11-30 | ||
| IT95MI002502A IT1276998B1 (it) | 1995-11-30 | 1995-11-30 | Dispositivo integrato monoliticamente |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU98109576A RU98109576A (ru) | 2000-05-10 |
| RU2175788C2 true RU2175788C2 (ru) | 2001-11-10 |
Family
ID=11372631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU98109576/06A RU2175788C2 (ru) | 1995-11-30 | 1996-11-26 | Монолитное интегральное устройство |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0864159A1 (zh) |
| JP (1) | JP2000503762A (zh) |
| CN (1) | CN1203690A (zh) |
| AU (1) | AU7709796A (zh) |
| BR (1) | BR9611784A (zh) |
| IT (1) | IT1276998B1 (zh) |
| RU (1) | RU2175788C2 (zh) |
| WO (1) | WO1997020320A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1314062B1 (it) * | 1999-10-21 | 2002-12-03 | St Microelectronics Srl | Metodo e relativa apparecchiatura per generare energia termica |
| RU2195717C1 (ru) * | 2001-08-23 | 2002-12-27 | Киркинский Виталий Алексеевич | Устройство для получения энергии |
| DE102013110249A1 (de) * | 2013-09-17 | 2015-03-19 | Airbus Defence and Space GmbH | Vorrichtung und Verfahren zur Energieerzeugung |
| CN105206313B (zh) * | 2015-10-15 | 2017-05-31 | 西安雍科建筑科技有限公司 | 一种冷聚变反应试验装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1364168A1 (ru) * | 1986-01-22 | 1991-09-23 | Институт электроники АН БССР | Многоэлементный термоэлектрический преобразователь |
| JPS6376443A (ja) * | 1986-09-19 | 1988-04-06 | Nec Corp | 半導体装置 |
| JPH06138269A (ja) * | 1992-10-27 | 1994-05-20 | Hiroshi Kubota | 常温核融合材料及び該材料を用いた常温核融合装置 |
-
1995
- 1995-11-30 IT IT95MI002502A patent/IT1276998B1/it active IP Right Grant
-
1996
- 1996-11-26 RU RU98109576/06A patent/RU2175788C2/ru not_active IP Right Cessation
- 1996-11-26 BR BR9611784-2A patent/BR9611784A/pt not_active Application Discontinuation
- 1996-11-26 EP EP96940127A patent/EP0864159A1/en not_active Withdrawn
- 1996-11-26 CN CN96198712A patent/CN1203690A/zh active Pending
- 1996-11-26 JP JP9520343A patent/JP2000503762A/ja active Pending
- 1996-11-26 WO PCT/IT1996/000226 patent/WO1997020320A1/en not_active Application Discontinuation
- 1996-11-26 AU AU77097/96A patent/AU7709796A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| AU7709796A (en) | 1997-06-19 |
| BR9611784A (pt) | 1999-12-28 |
| WO1997020320A1 (en) | 1997-06-05 |
| ITMI952502A0 (zh) | 1995-11-30 |
| JP2000503762A (ja) | 2000-03-28 |
| IT1276998B1 (it) | 1997-11-04 |
| CN1203690A (zh) | 1998-12-30 |
| EP0864159A1 (en) | 1998-09-16 |
| ITMI952502A1 (it) | 1997-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20031127 |