RU2016149164A3 - - Google Patents

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Publication number
RU2016149164A3
RU2016149164A3 RU2016149164A RU2016149164A RU2016149164A3 RU 2016149164 A3 RU2016149164 A3 RU 2016149164A3 RU 2016149164 A RU2016149164 A RU 2016149164A RU 2016149164 A RU2016149164 A RU 2016149164A RU 2016149164 A3 RU2016149164 A3 RU 2016149164A3
Authority
RU
Russia
Application number
RU2016149164A
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Russian (ru)
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RU2016149164A (ru
RU2693546C2 (ru
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Priority to RU2016149164A priority Critical patent/RU2693546C2/ru
Publication of RU2016149164A publication Critical patent/RU2016149164A/ru
Publication of RU2016149164A3 publication Critical patent/RU2016149164A3/ru
Application granted granted Critical
Publication of RU2693546C2 publication Critical patent/RU2693546C2/ru

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Chemically Coating (AREA)
RU2016149164A 2016-12-14 2016-12-14 Способ осаждения коллоидных наночастиц золота на поверхность кремниевых полупроводниковых пластин RU2693546C2 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2016149164A RU2693546C2 (ru) 2016-12-14 2016-12-14 Способ осаждения коллоидных наночастиц золота на поверхность кремниевых полупроводниковых пластин

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2016149164A RU2693546C2 (ru) 2016-12-14 2016-12-14 Способ осаждения коллоидных наночастиц золота на поверхность кремниевых полупроводниковых пластин

Publications (3)

Publication Number Publication Date
RU2016149164A RU2016149164A (ru) 2018-06-18
RU2016149164A3 true RU2016149164A3 (sr) 2019-01-30
RU2693546C2 RU2693546C2 (ru) 2019-07-03

Family

ID=62619464

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2016149164A RU2693546C2 (ru) 2016-12-14 2016-12-14 Способ осаждения коллоидных наночастиц золота на поверхность кремниевых полупроводниковых пластин

Country Status (1)

Country Link
RU (1) RU2693546C2 (sr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0865078A1 (en) * 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
FR2891187B1 (fr) * 2005-09-29 2010-06-04 Centre Nat Rech Scient Procede de preparation d'une surface polymere orientee et nanostructuree.
US8389393B2 (en) * 2009-07-29 2013-03-05 Massachusetts Institute Of Technology Nanoparticle synthesis
CN102978592B (zh) * 2012-12-24 2014-11-05 厦门大学 一种硅表面湿法沉积金纳米颗粒的方法

Also Published As

Publication number Publication date
RU2016149164A (ru) 2018-06-18
RU2693546C2 (ru) 2019-07-03

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