RU2016149164A3 - - Google Patents
Download PDFInfo
- Publication number
- RU2016149164A3 RU2016149164A3 RU2016149164A RU2016149164A RU2016149164A3 RU 2016149164 A3 RU2016149164 A3 RU 2016149164A3 RU 2016149164 A RU2016149164 A RU 2016149164A RU 2016149164 A RU2016149164 A RU 2016149164A RU 2016149164 A3 RU2016149164 A3 RU 2016149164A3
- Authority
- RU
- Russia
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Silicon Compounds (AREA)
- Chemically Coating (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2016149164A RU2693546C2 (ru) | 2016-12-14 | 2016-12-14 | Способ осаждения коллоидных наночастиц золота на поверхность кремниевых полупроводниковых пластин |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2016149164A RU2693546C2 (ru) | 2016-12-14 | 2016-12-14 | Способ осаждения коллоидных наночастиц золота на поверхность кремниевых полупроводниковых пластин |
Publications (3)
Publication Number | Publication Date |
---|---|
RU2016149164A RU2016149164A (ru) | 2018-06-18 |
RU2016149164A3 true RU2016149164A3 (sr) | 2019-01-30 |
RU2693546C2 RU2693546C2 (ru) | 2019-07-03 |
Family
ID=62619464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2016149164A RU2693546C2 (ru) | 2016-12-14 | 2016-12-14 | Способ осаждения коллоидных наночастиц золота на поверхность кремниевых полупроводниковых пластин |
Country Status (1)
Country | Link |
---|---|
RU (1) | RU2693546C2 (sr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865078A1 (en) * | 1997-03-13 | 1998-09-16 | Hitachi Europe Limited | Method of depositing nanometre scale particles |
FR2891187B1 (fr) * | 2005-09-29 | 2010-06-04 | Centre Nat Rech Scient | Procede de preparation d'une surface polymere orientee et nanostructuree. |
US8389393B2 (en) * | 2009-07-29 | 2013-03-05 | Massachusetts Institute Of Technology | Nanoparticle synthesis |
CN102978592B (zh) * | 2012-12-24 | 2014-11-05 | 厦门大学 | 一种硅表面湿法沉积金纳米颗粒的方法 |
-
2016
- 2016-12-14 RU RU2016149164A patent/RU2693546C2/ru active
Also Published As
Publication number | Publication date |
---|---|
RU2016149164A (ru) | 2018-06-18 |
RU2693546C2 (ru) | 2019-07-03 |