RU2016143114A3 - - Google Patents
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- RU2016143114A3 RU2016143114A3 RU2016143114A RU2016143114A RU2016143114A3 RU 2016143114 A3 RU2016143114 A3 RU 2016143114A3 RU 2016143114 A RU2016143114 A RU 2016143114A RU 2016143114 A RU2016143114 A RU 2016143114A RU 2016143114 A3 RU2016143114 A3 RU 2016143114A3
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016143114A RU2688865C2 (en) | 2016-11-02 | 2016-11-02 | Method of modifying nanostructures of electronic engineering materials with gas cluster ions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2016143114A RU2688865C2 (en) | 2016-11-02 | 2016-11-02 | Method of modifying nanostructures of electronic engineering materials with gas cluster ions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| RU2016143114A RU2016143114A (en) | 2018-05-03 |
| RU2016143114A3 true RU2016143114A3 (en) | 2019-03-28 |
| RU2688865C2 RU2688865C2 (en) | 2019-05-22 |
Family
ID=62105919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2016143114A RU2688865C2 (en) | 2016-11-02 | 2016-11-02 | Method of modifying nanostructures of electronic engineering materials with gas cluster ions |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2688865C2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2728513C1 (en) * | 2020-02-12 | 2020-07-30 | Акционерное общество "Государственный научный центр Российской Федерации - Физико-энергетический институт имени А.И. Лейпунского" | Device for cluster ion ionisation |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331227B1 (en) * | 1999-12-14 | 2001-12-18 | Epion Corporation | Enhanced etching/smoothing of dielectric surfaces |
| WO2005031838A1 (en) * | 2003-09-30 | 2005-04-07 | Japan Aviation Electronics Industry Limited | Method and device for flattening surface of solid |
| US7794798B2 (en) * | 2007-09-29 | 2010-09-14 | Tel Epion Inc. | Method for depositing films using gas cluster ion beam processing |
| US8223539B2 (en) * | 2010-01-26 | 2012-07-17 | Micron Technology, Inc. | GCIB-treated resistive device |
| US8193094B2 (en) * | 2010-06-21 | 2012-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post CMP planarization by cluster ION beam etch |
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2016
- 2016-11-02 RU RU2016143114A patent/RU2688865C2/en active
Also Published As
| Publication number | Publication date |
|---|---|
| RU2016143114A (en) | 2018-05-03 |
| RU2688865C2 (en) | 2019-05-22 |