RU2016135144A3 - - Google Patents

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Publication number
RU2016135144A3
RU2016135144A3 RU2016135144A RU2016135144A RU2016135144A3 RU 2016135144 A3 RU2016135144 A3 RU 2016135144A3 RU 2016135144 A RU2016135144 A RU 2016135144A RU 2016135144 A RU2016135144 A RU 2016135144A RU 2016135144 A3 RU2016135144 A3 RU 2016135144A3
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RU
Russia
Application number
RU2016135144A
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Russian (ru)
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RU2016135144A (en
RU2646527C2 (en
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Priority to RU2016135144A priority Critical patent/RU2646527C2/en
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Publication of RU2016135144A3 publication Critical patent/RU2016135144A3/ru
Publication of RU2016135144A publication Critical patent/RU2016135144A/en
Publication of RU2646527C2 publication Critical patent/RU2646527C2/en

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RU2016135144A 2016-08-29 2016-08-29 Emitter with negative electronic affinity RU2646527C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2016135144A RU2646527C2 (en) 2016-08-29 2016-08-29 Emitter with negative electronic affinity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2016135144A RU2646527C2 (en) 2016-08-29 2016-08-29 Emitter with negative electronic affinity

Publications (3)

Publication Number Publication Date
RU2016135144A3 true RU2016135144A3 (en) 2018-03-05
RU2016135144A RU2016135144A (en) 2018-03-05
RU2646527C2 RU2646527C2 (en) 2018-03-05

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ID=61568656

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2016135144A RU2646527C2 (en) 2016-08-29 2016-08-29 Emitter with negative electronic affinity

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RU (1) RU2646527C2 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477294A (en) * 1981-05-06 1984-10-16 The United States Of America As Represented By The Secretary Of The Army Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode
GB2269048B (en) * 1992-07-03 1995-10-04 Third Generation Technology Li Photoemitters
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US7455565B2 (en) * 2004-10-13 2008-11-25 The Board Of Trustees Of The Leland Stanford Junior University Fabrication of group III-nitride photocathode having Cs activation layer
RU2513662C2 (en) * 2012-06-29 2014-04-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" Method of making negative electron affinity photoemitter for infrared region

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Publication number Publication date
RU2016135144A (en) 2018-03-05
RU2646527C2 (en) 2018-03-05

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20180830