RU2016135144A3 - - Google Patents
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- RU2016135144A3 RU2016135144A3 RU2016135144A RU2016135144A RU2016135144A3 RU 2016135144 A3 RU2016135144 A3 RU 2016135144A3 RU 2016135144 A RU2016135144 A RU 2016135144A RU 2016135144 A RU2016135144 A RU 2016135144A RU 2016135144 A3 RU2016135144 A3 RU 2016135144A3
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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RU2016135144A RU2646527C2 (en) | 2016-08-29 | 2016-08-29 | Emitter with negative electronic affinity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2016135144A RU2646527C2 (en) | 2016-08-29 | 2016-08-29 | Emitter with negative electronic affinity |
Publications (3)
Publication Number | Publication Date |
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RU2016135144A3 true RU2016135144A3 (en) | 2018-03-05 |
RU2016135144A RU2016135144A (en) | 2018-03-05 |
RU2646527C2 RU2646527C2 (en) | 2018-03-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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RU2016135144A RU2646527C2 (en) | 2016-08-29 | 2016-08-29 | Emitter with negative electronic affinity |
Country Status (1)
Country | Link |
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RU (1) | RU2646527C2 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4477294A (en) * | 1981-05-06 | 1984-10-16 | The United States Of America As Represented By The Secretary Of The Army | Method of forming GaAs on Aly Ga1-y As transmission mode photocathodehode |
GB2269048B (en) * | 1992-07-03 | 1995-10-04 | Third Generation Technology Li | Photoemitters |
US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
US7455565B2 (en) * | 2004-10-13 | 2008-11-25 | The Board Of Trustees Of The Leland Stanford Junior University | Fabrication of group III-nitride photocathode having Cs activation layer |
RU2513662C2 (en) * | 2012-06-29 | 2014-04-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" | Method of making negative electron affinity photoemitter for infrared region |
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2016
- 2016-08-29 RU RU2016135144A patent/RU2646527C2/en not_active IP Right Cessation
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Publication number | Publication date |
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RU2016135144A (en) | 2018-03-05 |
RU2646527C2 (en) | 2018-03-05 |
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Date | Code | Title | Description |
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MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20180830 |