RU2016123529A - The method of obtaining whisker silicon nanocrystals - Google Patents

The method of obtaining whisker silicon nanocrystals Download PDF

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RU2016123529A
RU2016123529A RU2016123529A RU2016123529A RU2016123529A RU 2016123529 A RU2016123529 A RU 2016123529A RU 2016123529 A RU2016123529 A RU 2016123529A RU 2016123529 A RU2016123529 A RU 2016123529A RU 2016123529 A RU2016123529 A RU 2016123529A
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solution
silicon
anodized
placing
minutes
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RU2016123529A
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RU2648329C2 (en
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Валерий Александрович Небольсин
Александр Игоревич Дунаев
Борис Анатольевич Спиридонов
Екатерина Витальевна Богданович
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Федеральное государственное бюджетное образовательное учреждение высшего образования "Воронежский государственный технический университет"
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    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0014—Array or network of similar nanostructural elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • C30B29/02—Elements
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    • C30—CRYSTAL GROWTH
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
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Claims (1)

Способ получения нитевидных нанокристаллов кремния, включающий подготовку кремниевой пластины путем нанесения на ее поверхность нанодисперсных частиц катализатора с последующим помещением в ростовую печь, нагревом и осаждением кристаллизуемого вещества из газовой фазы по схеме пар → капельная жидкость → кристалл, отличающийся тем, что перед нанесением частиц катализатора и помещением подложки в ростовую печь на пластину кремния наносят пленку титана и анодируют длительностью от 5 до 90 мин в 1%-ном растворе NH4F в этиленгликоле, причем плотность анодного тока поддерживают в интервале от 5 до 20 мА/см2, а наночастицы катализатора на анодированную поверхность Ti наносят осаждением металла с общим обозначением Me, где Me выбирается из ряда Ni, Ag, Pd, из 0,1 М раствора, имеющего общую формулу Me(NO3)x, где Me - одно из химических веществ ряда Ni, Ag, Pd; х=1-2) в течение 1-2 мин при воздействии на раствор ультразвуком мощностью 60 Вт.A method of producing silicon filamentary silicon nanocrystals, comprising preparing a silicon wafer by depositing nanosized catalyst particles on its surface, followed by placing it in a growth furnace, heating and precipitating a crystallizable substance from the gas phase according to the scheme steam → droplet liquid → crystal, characterized in that before applying the catalyst particles and by placing the substrate in a growth furnace, a titanium film is applied to the silicon plate and anodized for 5 to 90 minutes in a 1% solution of NH 4 F in ethylene glycol, wherein the anode current density is maintained in the range from 5 to 20 mA / cm 2 , and the catalyst nanoparticles on the anodized Ti surface are deposited by metal deposition with the general designation Me, where Me is selected from the series Ni, Ag, Pd, from a 0.1 M solution having a total the formula Me (NO 3 ) x , where Me is one of the chemicals of the series Ni, Ag, Pd; x = 1-2) for 1-2 minutes when exposed to the solution by ultrasound with a power of 60 watts.
RU2016123529A 2016-06-14 2016-06-14 Method for producing sodium filamentary nanocrystals RU2648329C2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2005325265A1 (en) * 2004-07-07 2006-07-27 Nanosys, Inc. Systems and methods for harvesting and integrating nanowires
EP2736837B1 (en) * 2011-07-26 2021-09-29 OneD Material, Inc. Method for producing silicon nanowires
RU2526066C1 (en) * 2013-01-09 2014-08-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Воронежский государственный технический университет" Method of obtaining thread-like nanocrystals of semiconductors

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