RU2015139867A - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device Download PDF

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Publication number
RU2015139867A
RU2015139867A RU2015139867A RU2015139867A RU2015139867A RU 2015139867 A RU2015139867 A RU 2015139867A RU 2015139867 A RU2015139867 A RU 2015139867A RU 2015139867 A RU2015139867 A RU 2015139867A RU 2015139867 A RU2015139867 A RU 2015139867A
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RU
Russia
Prior art keywords
manufacturing
semiconductor device
formation
silicon carbide
carbide layer
Prior art date
Application number
RU2015139867A
Other languages
Russian (ru)
Other versions
RU2621372C2 (en
Inventor
Гасан Абакарович Мустафаев
Абдулла Гасанович Мустафаев
Арслан Гасанович Мустафаев
Наталья Васильевна Черкесова
Original Assignee
Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) filed Critical Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ)
Priority to RU2015139867A priority Critical patent/RU2621372C2/en
Publication of RU2015139867A publication Critical patent/RU2015139867A/en
Application granted granted Critical
Publication of RU2621372C2 publication Critical patent/RU2621372C2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

Claims (1)

Способ изготовления полупроводникового прибора, содержащего подложку, включающий процессы формирования областей стока/истока, слоя карбида кремния, отличающийся тем, что после формирования слоя карбида кремния полупроводниковые структуры подвергают обработке электронами с энергией 6 МэВ, дозой (1-3)⋅1018 эл/см2 с последующим отжигом при температуре 800-900°С в течение 30 мин в атмосфере водорода, что позволяет повысить процент выхода годных структур и улучшить их надежность.A method of manufacturing a semiconductor device containing a substrate, including processes for the formation of drain / source regions, a silicon carbide layer, characterized in that after the formation of the silicon carbide layer, the semiconductor structures are treated with electrons with an energy of 6 MeV, dose (1-3) ⋅ 10 18 el / cm 2 followed by annealing at a temperature of 800-900 ° C for 30 minutes in a hydrogen atmosphere, which allows to increase the percentage yield of suitable structures and improve their reliability.
RU2015139867A 2015-09-18 2015-09-18 Method of semiconductor device manufacturing RU2621372C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2015139867A RU2621372C2 (en) 2015-09-18 2015-09-18 Method of semiconductor device manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2015139867A RU2621372C2 (en) 2015-09-18 2015-09-18 Method of semiconductor device manufacturing

Publications (2)

Publication Number Publication Date
RU2015139867A true RU2015139867A (en) 2017-03-23
RU2621372C2 RU2621372C2 (en) 2017-06-02

Family

ID=58454684

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2015139867A RU2621372C2 (en) 2015-09-18 2015-09-18 Method of semiconductor device manufacturing

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RU (1) RU2621372C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2726904C1 (en) * 2019-10-25 2020-07-16 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Semiconductor device manufacturing method
RU2738772C1 (en) * 2020-02-25 2020-12-16 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Method of making semiconductor structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU1632278C (en) * 1989-07-10 1994-10-15 Физико-технический институт им.А.Ф.Иоффе РАН Method for manufacturing light-emitting diode patterns
US5307305A (en) * 1991-12-04 1994-04-26 Rohm Co., Ltd. Semiconductor device having field effect transistor using ferroelectric film as gate insulation film
RU2100872C1 (en) * 1994-01-17 1997-12-27 Институт физики твердого тела и полупроводников АН Беларуси Method of treatment of avalanche diodes
US5641695A (en) * 1995-10-02 1997-06-24 Motorola Method of forming a silicon carbide JFET
US6358806B1 (en) * 2001-06-29 2002-03-19 Lsi Logic Corporation Silicon carbide CMOS channel

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Publication number Publication date
RU2621372C2 (en) 2017-06-02

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20180919