RU2013124192A - METHOD FOR FORMING A MICROSTRUCTURED AND HIGHLY DOPED LAYER ON A SILICON SURFACE - Google Patents
METHOD FOR FORMING A MICROSTRUCTURED AND HIGHLY DOPED LAYER ON A SILICON SURFACE Download PDFInfo
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Abstract
1. Способ формирования микроструктурированного, высокодопированного атомами серы слоя на поверхности кремния, основанный на облучении поверхности кремния множественными фокусированными ультракороткими -фемто- или короткими пикосекундными -лазерными импульсами (УКИ) в химически активной среде серосодержащих соединений, с разложением серосодержащих соединений на нагретой или расплавленной лазером поверхности кремния и последующей диффузией атомов серы в объем конденсированной фазы кремния, или с лазерной абляцией поверхности кремния УКИ и разложением серосодержащих соединений при взаимодействии с абляционным факелом, сопровождающимся переосаждением и разложением серосодержащих интермедиатов на нагретой или расплавленной лазером поверхности кремния с последующией диффузией атомов серы в объем конденсированной фазы кремния, отличающийся тем, что при этом в качестве химически активной среды выбирают жидкофазные соединения с высоким содержанием серы, в которые погружают облучаемую мишень кремния, а также выбирают такой режим воздействия на мишень УКИ, чтобы излучение УКИ проникало сквозь серосодержащую жидкость к мишени кремния, а энергия, частота следования и фокусировка УКИ обеспечивали абляционное микроструктурирование поверхности кремния.2. Способ по п.1, отличающийся тем, что сначала выполняют абляционное микроструктурирование сухой поверхности кремния под действием множественных УКИ, а затем проводят повторную обработку УКИ микроструктурированной поверхности под тонким слоем жидкой фазы сероуглерода для допирования поверхностного слоя кремния атомами серы.1. A method of forming a microstructured layer highly doped with sulfur atoms on a silicon surface, based on irradiating a silicon surface with multiple focused ultrashort -femto- or short picosecond-laser pulses (USPs) in a chemically active medium of sulfur-containing compounds, with the decomposition of sulfur-containing compounds in a heated or molten laser silicon surface and subsequent diffusion of sulfur atoms into the volume of the condensed phase of silicon, or with laser ablation of the silicon surface IQD and decomposition of sulfur-containing compounds during interaction with an ablation torch, accompanied by reprecipitation and decomposition of sulfur-containing intermediates on a heated or molten laser surface of silicon, followed by diffusion of sulfur atoms into the volume of the condensed silicon phase, characterized in that liquid-phase compounds are chosen as a chemically active medium with a high sulfur content, into which the irradiated silicon target is immersed, and also select such a mode of action on the USP target so that ultrashort pulses penetrated through a sulfur-containing liquid to a silicon target, and the energy, repetition rate, and focusing of ultrashort pulses provided ablative microstructuring of the silicon surface. 2. The method according to claim 1, characterized in that first ablative microstructuring of the dry silicon surface is performed under the influence of multiple ultrashort pulses, and then the ultrashort pulses of the microstructured pulsed surface are reprocessed under a thin layer of the liquid phase of carbon disulfide to dope the silicon surface layer with sulfur atoms.
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RU2013124192/05A RU2550868C2 (en) | 2013-05-28 | 2013-05-28 | Method of forming microstructured and heavily doped layer on silicon surface |
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RU2013124192/05A RU2550868C2 (en) | 2013-05-28 | 2013-05-28 | Method of forming microstructured and heavily doped layer on silicon surface |
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RU2013124192A true RU2013124192A (en) | 2014-12-20 |
RU2550868C2 RU2550868C2 (en) | 2015-05-20 |
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RU2646644C1 (en) * | 2016-10-20 | 2018-03-06 | Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФГБУН ФИАН) | Method for forming super-doped gray micro-structured crystalline layer on surface of silicon |
RU2724142C1 (en) * | 2019-12-17 | 2020-06-22 | Акционерное общество "ОКБ-Планета" АО "ОКБ-Планета" | Method of producing different types of silicon carbide surface morphology |
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RU2069414C1 (en) * | 1994-08-29 | 1996-11-20 | Институт физики полупроводников СО РАН | Method for doping silicon with chalcogens |
CN101880914B (en) * | 2010-05-25 | 2012-09-12 | 中国科学院微电子研究所 | Method for preparing black silicon by plasma immersion ion implantation |
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