RU2013120785A - METHOD FOR FORMING CONTACT SITES FOR YBa2Cu3O7-x FILMS - Google Patents
METHOD FOR FORMING CONTACT SITES FOR YBa2Cu3O7-x FILMS Download PDFInfo
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- RU2013120785A RU2013120785A RU2013120785/28A RU2013120785A RU2013120785A RU 2013120785 A RU2013120785 A RU 2013120785A RU 2013120785/28 A RU2013120785/28 A RU 2013120785/28A RU 2013120785 A RU2013120785 A RU 2013120785A RU 2013120785 A RU2013120785 A RU 2013120785A
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- films
- dielectric substrate
- gold
- target
- contact pads
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Способ формирования на диэлектрической подложке контактных площадок к YBaCuOпленкам, в котором контактные площадки формируют перед нанесением пленок YBaCuOна диэлектрической подложке, отличающийся тем, что производится нагрев мишени и подложки до температуры Т=450-500°С, напыление контактной площадки из Au (золота) производится методом лазерного распыления мишени из золота твердотельным импульсным лазером с длиной волны излучения λ=1,06 мкм, длительностью импульса τ=10÷20 нс и частотой повторения импульсов ν=10 Гц, плотностью мощности лазерного излучения Р=(5÷7)·10Вт/см, при этом диэлектрическая подложка устанавливается на расстоянии L=4-6 мм от золотой мишени при давлении в вакуумной камере р=0,1÷0,5 Па.A method of forming contact pads on YBaCuO films on a dielectric substrate, in which contact pads are formed before applying YBaCuO films on a dielectric substrate, characterized in that the target and the substrate are heated to a temperature of T = 450-500 ° C, the contact pad is deposited from Au (gold) by laser sputtering of a gold target with a solid-state pulsed laser with a radiation wavelength λ = 1.06 μm, pulse duration τ = 10 ÷ 20 ns and pulse repetition rate ν = 10 Hz, laser power density cheniya P = (5 ÷ 7) · 10W / cm, the dielectric substrate is set at a distance L = 4-6 mm from the gold target at a pressure in the vacuum chamber r = 0.1 ÷ 0.5 Pa.
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RU2013120785/28A RU2538932C2 (en) | 2013-05-06 | 2013-05-06 | METHOD OF FORMING CONTACT PADS ON YBA2CU3O7-x FILMS |
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RU2013120785/28A RU2538932C2 (en) | 2013-05-06 | 2013-05-06 | METHOD OF FORMING CONTACT PADS ON YBA2CU3O7-x FILMS |
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RU2013120785A true RU2013120785A (en) | 2014-11-20 |
RU2538932C2 RU2538932C2 (en) | 2015-01-10 |
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RU2013120785/28A RU2538932C2 (en) | 2013-05-06 | 2013-05-06 | METHOD OF FORMING CONTACT PADS ON YBA2CU3O7-x FILMS |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2785507C2 (en) * | 2017-12-06 | 2022-12-08 | Танака Кикинзоку Когио К.К. | Golden sprayed target and its production method |
US11560620B2 (en) | 2017-12-06 | 2023-01-24 | Tanaka Kikinzoku Kogyo K. K. | Gold sputtering target and method for producing the same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2580213C1 (en) * | 2015-02-02 | 2016-04-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Омский государственный университет им. Ф.М. Достоевского" | Method of forming superconducting thin film with local regions of variable thickness |
RU2736233C1 (en) * | 2020-02-10 | 2020-11-12 | Открытое акционерное общество "Авангард" | Thin-film titanium thermistor on flexible polyimide substrate and method of manufacture thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5945383A (en) * | 1992-03-19 | 1999-08-31 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method producing an SNS superconducting junction with weak link barrier |
RU2105390C1 (en) * | 1996-11-19 | 1998-02-20 | Анатолий Михайлович Балбашов | Method for manufacturing of high-temperature superconducting josephson junction |
RU2133525C1 (en) * | 1997-10-21 | 1999-07-20 | Омский государственный университет | Superconducting quantum interference transmitter and process of its manufacture |
US8032196B2 (en) * | 2006-08-23 | 2011-10-04 | Chugoku Electric Power Co., Inc. | Josephson device, method of forming Josephson device and superconductor circuit |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2785507C2 (en) * | 2017-12-06 | 2022-12-08 | Танака Кикинзоку Когио К.К. | Golden sprayed target and its production method |
US11560620B2 (en) | 2017-12-06 | 2023-01-24 | Tanaka Kikinzoku Kogyo K. K. | Gold sputtering target and method for producing the same |
US11795540B2 (en) | 2017-12-06 | 2023-10-24 | Tanaka Kikinzoku Kogyo K. K. | Gold sputtering target and method for producing the same |
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RU2538932C2 (en) | 2015-01-10 |
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Effective date: 20150507 |