RU2013120785A - METHOD FOR FORMING CONTACT SITES FOR YBa2Cu3O7-x FILMS - Google Patents

METHOD FOR FORMING CONTACT SITES FOR YBa2Cu3O7-x FILMS Download PDF

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RU2013120785A
RU2013120785A RU2013120785/28A RU2013120785A RU2013120785A RU 2013120785 A RU2013120785 A RU 2013120785A RU 2013120785/28 A RU2013120785/28 A RU 2013120785/28A RU 2013120785 A RU2013120785 A RU 2013120785A RU 2013120785 A RU2013120785 A RU 2013120785A
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Russia
Prior art keywords
films
dielectric substrate
gold
target
contact pads
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RU2013120785/28A
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Russian (ru)
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RU2538932C2 (en
Inventor
Геннадий Михайлович Серопян
Сергей Александрович Сычев
Александр Геннадьевич Петров
Денис Викторович Федосов
Ирина Станиславовна Позыгун
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Общество с ограниченной ответственностью "Инженерные решения"
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Priority to RU2013120785/28A priority Critical patent/RU2538932C2/en
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  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

Способ формирования на диэлектрической подложке контактных площадок к YBaCuOпленкам, в котором контактные площадки формируют перед нанесением пленок YBaCuOна диэлектрической подложке, отличающийся тем, что производится нагрев мишени и подложки до температуры Т=450-500°С, напыление контактной площадки из Au (золота) производится методом лазерного распыления мишени из золота твердотельным импульсным лазером с длиной волны излучения λ=1,06 мкм, длительностью импульса τ=10÷20 нс и частотой повторения импульсов ν=10 Гц, плотностью мощности лазерного излучения Р=(5÷7)·10Вт/см, при этом диэлектрическая подложка устанавливается на расстоянии L=4-6 мм от золотой мишени при давлении в вакуумной камере р=0,1÷0,5 Па.A method of forming contact pads on YBaCuO films on a dielectric substrate, in which contact pads are formed before applying YBaCuO films on a dielectric substrate, characterized in that the target and the substrate are heated to a temperature of T = 450-500 ° C, the contact pad is deposited from Au (gold) by laser sputtering of a gold target with a solid-state pulsed laser with a radiation wavelength λ = 1.06 μm, pulse duration τ = 10 ÷ 20 ns and pulse repetition rate ν = 10 Hz, laser power density cheniya P = (5 ÷ 7) · 10W / cm, the dielectric substrate is set at a distance L = 4-6 mm from the gold target at a pressure in the vacuum chamber r = 0.1 ÷ 0.5 Pa.

Claims (1)

Способ формирования на диэлектрической подложке контактных площадок к YBa2Cu3O7-х пленкам, в котором контактные площадки формируют перед нанесением пленок YBa2Cu3O7-х на диэлектрической подложке, отличающийся тем, что производится нагрев мишени и подложки до температуры Т=450-500°С, напыление контактной площадки из Au (золота) производится методом лазерного распыления мишени из золота твердотельным импульсным лазером с длиной волны излучения λ=1,06 мкм, длительностью импульса τ=10÷20 нс и частотой повторения импульсов ν=10 Гц, плотностью мощности лазерного излучения Р=(5÷7)·108 Вт/см2, при этом диэлектрическая подложка устанавливается на расстоянии L=4-6 мм от золотой мишени при давлении в вакуумной камере р=0,1÷0,5 Па. A method of forming contact pads for YBa 2 Cu 3 O 7-x films on a dielectric substrate, in which contact pads are formed before applying YBa 2 Cu 3 O 7-x films on a dielectric substrate, characterized in that the target and the substrate are heated to a temperature T = 450-500 ° C, the contact pad is made of Au (gold) by laser sputtering of a gold target with a solid-state pulsed laser with a radiation wavelength of λ = 1.06 μm, a pulse duration of τ = 10 ÷ 20 ns and a pulse repetition rate of ν = 10 Hz, power density l nuclear radiation P = (5 ÷ 7) · 10 8 W / cm 2 , while the dielectric substrate is installed at a distance L = 4-6 mm from the gold target at a pressure in the vacuum chamber of p = 0.1 ÷ 0.5 Pa.
RU2013120785/28A 2013-05-06 2013-05-06 METHOD OF FORMING CONTACT PADS ON YBA2CU3O7-x FILMS RU2538932C2 (en)

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RU2013120785/28A RU2538932C2 (en) 2013-05-06 2013-05-06 METHOD OF FORMING CONTACT PADS ON YBA2CU3O7-x FILMS

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RU2013120785/28A RU2538932C2 (en) 2013-05-06 2013-05-06 METHOD OF FORMING CONTACT PADS ON YBA2CU3O7-x FILMS

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Cited By (2)

* Cited by examiner, † Cited by third party
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RU2785507C2 (en) * 2017-12-06 2022-12-08 Танака Кикинзоку Когио К.К. Golden sprayed target and its production method
US11560620B2 (en) 2017-12-06 2023-01-24 Tanaka Kikinzoku Kogyo K. K. Gold sputtering target and method for producing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2580213C1 (en) * 2015-02-02 2016-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Омский государственный университет им. Ф.М. Достоевского" Method of forming superconducting thin film with local regions of variable thickness
RU2736233C1 (en) * 2020-02-10 2020-11-12 Открытое акционерное общество "Авангард" Thin-film titanium thermistor on flexible polyimide substrate and method of manufacture thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945383A (en) * 1992-03-19 1999-08-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method producing an SNS superconducting junction with weak link barrier
RU2105390C1 (en) * 1996-11-19 1998-02-20 Анатолий Михайлович Балбашов Method for manufacturing of high-temperature superconducting josephson junction
RU2133525C1 (en) * 1997-10-21 1999-07-20 Омский государственный университет Superconducting quantum interference transmitter and process of its manufacture
US8032196B2 (en) * 2006-08-23 2011-10-04 Chugoku Electric Power Co., Inc. Josephson device, method of forming Josephson device and superconductor circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2785507C2 (en) * 2017-12-06 2022-12-08 Танака Кикинзоку Когио К.К. Golden sprayed target and its production method
US11560620B2 (en) 2017-12-06 2023-01-24 Tanaka Kikinzoku Kogyo K. K. Gold sputtering target and method for producing the same
US11795540B2 (en) 2017-12-06 2023-10-24 Tanaka Kikinzoku Kogyo K. K. Gold sputtering target and method for producing the same

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Effective date: 20150507