JP2016039304A5 - - Google Patents
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- JP2016039304A5 JP2016039304A5 JP2014162643A JP2014162643A JP2016039304A5 JP 2016039304 A5 JP2016039304 A5 JP 2016039304A5 JP 2014162643 A JP2014162643 A JP 2014162643A JP 2014162643 A JP2014162643 A JP 2014162643A JP 2016039304 A5 JP2016039304 A5 JP 2016039304A5
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- JP
- Japan
- Prior art keywords
- region
- metallization
- electrode
- semiconductor laser
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001465 metallisation Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000003990 capacitor Substances 0.000 claims 5
- 239000000969 carrier Substances 0.000 claims 3
- 238000005219 brazing Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
Claims (4)
前記チップキャリア上に設けられ、チップ実装領域、及び前記チップ実装領域からそれぞれ延在する第１及び第２領域を有する第１メタライズと、
前記チップキャリア上に設けられると共に前記第１メタライズと分離しており、直流電流が入力される第２メタライズと、
前記第１メタライズにおける前記チップ実装領域及び前記第２領域に連続して設けられたロウ材パターンと、
前記ロウ材パターンを介して前記チップ実装領域に実装されると共に前記第２メタライズに接続される半導体レーザチップと、
一方の電極が前記第１領域に接続され、他方の電極が前記第２メタライズに接続されるコンデンサと、
を備える半導体レーザ装置。 Chip carrier,
A first metallization provided on the chip carrier and having a chip mounting region and first and second regions respectively extending from the chip mounting region;
A second metallization provided on the chip carrier and separated from the first metallization, to which a direct current is input;
A brazing material pattern provided continuously in the chip mounting area and the second area in the first metallization;
A semiconductor laser chip mounted on the chip mounting region via the brazing material pattern and connected to the second metallization;
A capacitor having one electrode connected to the first region and the other electrode connected to the second metallization;
A semiconductor laser device comprising:
前記第２メタライズと前記利得電極とは、ワイヤを介して接続されてなる、請求項１に記載の半導体レーザ装置。 Said semiconductor laser chip, Ri wavelength tunable semiconductor laser chip der comprising a gain region and the wavelength control region, and includes a gain electrode for injecting current into the gain region,
Wherein the second metallization and the gain electrode, ing connected via a wire, a semiconductor laser device according to claim 1.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014162643A JP6542514B2 (en) | 2014-08-08 | 2014-08-08 | Semiconductor laser device |
| CN201580001570.5A CN105518950B (en) | 2014-08-08 | 2015-08-06 | The method of laser module and assembling laser module |
| PCT/JP2015/003966 WO2016021203A1 (en) | 2014-08-08 | 2015-08-06 | Laser assembly and method to assemble laser assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014162643A JP6542514B2 (en) | 2014-08-08 | 2014-08-08 | Semiconductor laser device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016039304A JP2016039304A (en) | 2016-03-22 |
| JP2016039304A5 true JP2016039304A5 (en) | 2017-07-27 |
| JP6542514B2 JP6542514B2 (en) | 2019-07-10 |
Family
ID=55263494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014162643A Active JP6542514B2 (en) | 2014-08-08 | 2014-08-08 | Semiconductor laser device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6542514B2 (en) |
| CN (1) | CN105518950B (en) |
| WO (1) | WO2016021203A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6794140B2 (en) * | 2016-05-23 | 2020-12-02 | オプト エレクトロニクス ソリューションズ | Optical transmitter and optical module including it |
| DE102017108050B4 (en) | 2017-04-13 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | semiconductor radiation source |
| JP7097169B2 (en) * | 2017-10-27 | 2022-07-07 | 古河電気工業株式会社 | Optical element module and evaluation method of optical element module |
| JP2019087656A (en) * | 2017-11-08 | 2019-06-06 | 三菱電機株式会社 | Optical module and method of manufacturing the same |
| US11811191B2 (en) * | 2019-08-22 | 2023-11-07 | Sumitomo Electric Device Innovations, Inc. | Optical semiconductor device and carrier |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4547063B2 (en) * | 2000-02-24 | 2010-09-22 | シチズン電子株式会社 | Laser diode mount structure and mounting method thereof |
| JP3889933B2 (en) * | 2001-03-02 | 2007-03-07 | シャープ株式会社 | Semiconductor light emitting device |
| JP4349552B2 (en) * | 2001-12-26 | 2009-10-21 | 株式会社Ｋｅｌｋ | Peltier element thermoelectric conversion module, manufacturing method of Peltier element thermoelectric conversion module, and optical communication module |
| JP2005203553A (en) * | 2004-01-15 | 2005-07-28 | Matsushita Electric Ind Co Ltd | Optical transmission/reception module and optical transmitter-receiver |
| US7426225B2 (en) * | 2004-02-19 | 2008-09-16 | Sumitomo Electric Industries, Ltd. | Optical sub-assembly having a thermo-electric cooler and an optical transceiver using the optical sub-assembly |
| JP4772560B2 (en) * | 2006-03-31 | 2011-09-14 | 住友電工デバイス・イノベーション株式会社 | Optical semiconductor device and control method thereof |
| JP4994173B2 (en) * | 2007-09-27 | 2012-08-08 | 京セラ株式会社 | Electronic components |
| JP2012119637A (en) * | 2010-12-03 | 2012-06-21 | Sumitomo Electric Device Innovations Inc | Manufacturing method of optical semiconductor device |
| US8821042B2 (en) * | 2011-07-04 | 2014-09-02 | Sumitomo Electic Industries, Ltd. | Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount |
| JP2013074187A (en) * | 2011-09-28 | 2013-04-22 | Oki Electric Ind Co Ltd | Mode synchronous semiconductor laser device and control method for mode synchronous semiconductor laser |
-
2014
- 2014-08-08 JP JP2014162643A patent/JP6542514B2/en active Active
-
2015
- 2015-08-06 WO PCT/JP2015/003966 patent/WO2016021203A1/en active Application Filing
- 2015-08-06 CN CN201580001570.5A patent/CN105518950B/en active Active
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