RU2012153091A

RU2012153091A - METHOD FOR SILICON NITride DEPOSITION ON SILICON SUBSTRATE

Info

Publication number: RU2012153091A
Application number: RU2012153091/28A
Authority: RU
Inventors: Алексей Евгеньевич Ануров; Андрей Александрович Жуков; Владимир Миронович Долгополов
Priority date: 2012-12-07
Filing date: 2012-12-07
Publication date: 2014-06-20
Also published as: RU2518283C1

Abstract

1. Способ осаждения пленки нитрида кремния на кремниевую подложку, включающий:- предварительную обработку поверхности кремниевой подложки в плазме азота;- подготовку компонентов газовой смеси из 5,2% смеси моносилана с аргоном с расходом 1,05÷1,15 л/ч и азота с расходом 0,07÷0,08 л/ч, из которой формируется пленка нитрида кремния;- осаждение пленки нитрида кремния на обработанную поверхность кремниевой подложки непосредственно после предварительной обработки поверхности кремниевой подложки в плазме азота.2. Способ по п.1, в котором предварительную обработку поверхности кремниевой подложки проводят в азотной плазме ВЧ-индукционного разряда изолированного от «земли» корпуса реактора.3. Способ по п.2, в котором ВЧ-мощность осаждения пленки нитрида кремния составляет 250÷350 Вт.4. Способ по пп.1-3, в котором реакцию плазмы с кремниевой подложкой при осаждении пленки нитрида кремния осуществляют при давлении 0,1÷0,3 Па в реакторе.1. A method of deposition of a silicon nitride film on a silicon substrate, including: - pre-treating the surface of the silicon substrate in a nitrogen plasma; - preparing the components of the gas mixture from a 5.2% mixture of monosilane with argon with a flow rate of 1.05 ÷ 1.15 l / h and nitrogen with a flow rate of 0.07 ÷ 0.08 l / h, from which a silicon nitride film is formed; - deposition of a silicon nitride film on the treated surface of the silicon substrate immediately after preliminary processing of the surface of the silicon substrate in a nitrogen plasma. 2. The method according to claim 1, wherein the preliminary surface treatment of the silicon substrate is carried out in a nitrogen plasma of an RF induction discharge isolated from the “earth” of the reactor vessel. The method according to claim 2, in which the RF power of deposition of the film of silicon nitride is 250 ÷ 350 watts. The method according to claims 1 to 3, in which the plasma reaction with the silicon substrate during deposition of a silicon nitride film is carried out at a pressure of 0.1 ÷ 0.3 Pa in the reactor.

Claims

1. The method of deposition of a film of silicon nitride on a silicon substrate, including:

- pre-treatment of the surface of the silicon substrate in a plasma of nitrogen;

- preparation of the components of the gas mixture from a 5.2% mixture of monosilane with argon with a flow rate of 1.05 ÷ 1.15 l / h and nitrogen with a flow rate of 0.07 ÷ 0.08 l / h, from which a silicon nitride film is formed;

- deposition of the silicon nitride film on the treated surface of the silicon substrate immediately after pre-treatment of the surface of the silicon substrate in a nitrogen plasma.

2. The method according to claim 1, in which the preliminary surface treatment of the silicon substrate is carried out in a nitrogen plasma of an RF induction discharge isolated from the “earth” of the reactor vessel.

3. The method according to claim 2, in which the RF power deposition of the film of silicon nitride is 250 ÷ 350 watts.

4. The method according to claims 1 to 3, in which the reaction of the plasma with a silicon substrate during deposition of a film of silicon nitride is carried out at a pressure of 0.1 ÷ 0.3 Pa in the reactor.